• Journal of Animal Science and Technology
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• v.48 no.2
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• pp.315-324
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• 2006

This research was conducted to clarify the characteristics of electrochemical decolorization of effluent discharged from a biological animal wastewater treatment process and to finally establish parameters or mode for optimum operation of electrolysis system. Average color unit of wastewater was about 1,200 and DSA(Dimensionally Stable Anode) was used as electrode. Experiments were performed with two different operation conditions or modes, fixed voltage-free current(Run A) and free voltage-fixed current(Run B). Color removal rate was proportional to the electrode area and electrical conductivity, and an equation subject to them at a condition of fixed voltage was derived as follows; Ct=C0ekt, k=[{0.0121×ａ(dm2)× c(mS/cm)}+0.0288], [where, C0: initial color, Ct: color unit after treatment for t, k: reaction coefficient, t: time(min.), ａ: electrode area, c: conductivity]. From the study on the effects of current density on color removal, it was revealed that the removal efficiency of color was function of the current density, showing direct proportion. However, when considered energy consumption rate, maintenance of low current density was an economical way. Based on the obtained results, it was concluded that supplementation of electrolyte is not necessary for the removal of color from the effluent of secondary treatment process and operation with the mode of free voltage-fixed current, rather than operation with fixed voltage-free current mode, would be an efficient way to increase the removal performance and capacity per consumed energy.

• Progress in Superconductivity and Cryogenics
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• v.17 no.3
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• pp.37-40
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• 2015

Recently, the electrical insulation design for electrical apparatuses is important to cope with the tendency of high voltage. The degradation characteristics of a superconducting coil due to an electrical breakdown should be considered to design a high voltage superconducting coil. In this paper, the degradation characteristics of 2G high temperature superconducting (HTS) wires are studied with respect to electrical breakdown tests. To analyze the dependency of the degradation characteristics of 2G HTS wires, the electrical breakdown tests are performed with AC(alternating current) and DC(direct current) voltage. All tests are performed by applying various magnitudes of AC and DC breakdown voltages. To verify the degradation characteristics of 2G HTS wires, the tests are performed with various 2G HTS wires with respect to stabilizer materials. The degradation characteristics of 2G HTS wires, such as Ic(critical current) and index number are measured by performing electrical breakdown tests. It is found that the characteristics such as Ic and index number can be degraded by an electrical breakdown. Moreover, it is concluded that the degradation characteristics of 2G HTS wires are affected by the stabilizer material and applied voltages. The cross-sectional view of 2G HTS wires is observed by using a scanning electron microscope (SEM). As results, it is found that the degradation characteristics of 2G HTS wires are concerned with hardness and electrical conductivity of stabilizer layers.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.53-54
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• 2000

Measurements of the direct current resistivity, on multiwalled carbon nanotubes(MWNT) for field electron emitter source that had been screen printed in a thick film form were made as a function of temperature T in the range of 1.7K-390K. In this measuring temperature range, the electrical resistivity for the MWNT show that the main contribution to the conductivity comes form carries that hop directly between localized states executing variable range hopping processes. This thick-film form system for large area display showed a high bright light emission as well as very low turn-on field as like an individual MWNT system at room temperature. Furthermore, the electron emission characteristics followed well typical Fowler-Nordheim conduction under the vacuum.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.4
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• pp.221-225
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• 2018

In this work, in order to effectively improve the electrical conductivity and visible light transmittance of ZnO thin films, ZnO single layer and ZnO/Ag bi-layer films were deposited on glass substrates by radio frequency and direct current magnetron sputtering, and then, the effects of an Ag buffer layer and electron beam irradiation on the electrical and optical properties of the films were investigated. The observed results indicate that ZnO 100 nm / Ag 7 nm films show higher opto-electrical performance than the ZnO single layer film. In addition, electron beam irradiation also effectively enhanced the visible transmittance and electrical conductivity of the ZnO/Ag bi-layer films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.502-502
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• 2007

Current thin film process using memory device fabrication process use expensive processes such as manufacturing of photo mask, coating of photo resist, exposure, development, and etching. However, direct printing technology has the merits about simple and cost effective processes because inks are directly injective without mask. And also, this technology has the advantage about fabrication of fine pattern line on various substrates such as PCB, FCPB, glass, polymer and so on. In this work, we have fabricated the fine and thick metal pattern line for the electronic circuit board using metal ink contains Ag nano-particles. Metal lines are fabricated by two types of printing methods. One is a conventional printing method which is able to quick fabrication of fine pattern line, but has various difficulties about thick and high resolution DPI(Dot per Inch) pattern lines because of bulge and piling up phenomenon. Another(Second) methods is sequential printing method which has a various merits of fabrication for fine, thick and high resolution pattern lines without bulge. In this work, conductivities of metal pattern line are investigated with respect to printing methods and pattern thickness. As a result, conductivity of thick pattern is about several un.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.296-296
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• 2013

Supercapacitor is a capacitor with extraordinarily high energy density, which basically consists of current collector, active material and electrolyte. Ruthenium oxide ($RuO_2$) is one of the most widely studied active materials due to its high specific capacitance and good electrical conductivity. In general, it is known that the coating of $RuO_2$ on nanoarchitectured current collector shows improved performance of energy storage device compared to the coating on the planar current collector. Especially, the surface structure with standing coaxial nanopillars are most desirable since it can provide direct paths for efficient charge transport along the axial paths of each nanopillars and the inter-nanopillar spacing allows easy access of electrolyte ions. However, well-known fabrication methods for metal or metal oxide nanopillars, such as the process using anodize aluminum oxide (AAO) templates, often require long and complicated nanoprocess.In this work, we developed relatively simple method fabricating indium tin oxide (ITO) nanopillars via sputtering. We also electrodeposited $RuO_2$ nanoparticles onto these ITO nanopillars and investigated its physical and electrochemical properties.

• Journal of IKEEE
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• v.11 no.4
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• pp.272-278
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• 2007

In this paper, we report on the 2D (two-dimensional) simulation result of the DC (direct current) electrical and thermal characteristics of AlGaN/GaN HEMTs (high electron mobility transistors) grown on Si substrate, in comparison with those grown on sapphire and SiC (silicon carbide) substrate, respectively. In general, the electrical properties of HEMT are affected by electron mobility and thermal conductivity, which depend on substrate material. For this reason, the substrates of GaN-based HEMT have been widely studied today. The simulation results are compared and studied by applying general Drift-Diffusion and thermal model altering temperature as 300, 400 and 500 K, respectively. With setting T=300 K and $V_{GS}$=1 V, the $I_{D,max}$ (drain saturation current) were 189 mA/mm for sapphire, 293 mA/mm for SiC, and 258 mA/mm for Si, respectively. In addition, $G_{m,max}$ (maximum transfer conductance) of sapphire, SiC, Si was 38, 50, 31 mS/mm, respectively, at T=500 K.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1357-1358
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• 2006

Indium tin oxide (ITO) thin film is a transparent electrode, which is widely applied to solar battery, illuminators, optical switches, liquid crystal displays (LCDs), plasma display panels (PDPs), and organic light emitting displays (OLEDs) due to its easy formation on glass substrates, goof optical transmittance, and good conductivity. ITO thin film is generally fabricated by various methods such as spray, CVD, evaporation, electron gun deposition, direct current electroplating, high frequency sputtering, and reactive DC sputtering. However, some problems such as peaks, bumps, large particles, and pin-holes on the surface of ITO thin film were reported, which caused the destruction of color quality, the reduction of device life time, and short-circuit. Chemical mechanical polishing (CMP) processis one of the suitable solutions which could solve the problems.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.48-48
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• 2010

In this paper, we have investigated temperature dependence of dielectric breakdown voltage at epoxy with added nano-filler(MgO), which is used as a filler of epoxy additives for HVDC(high voltage direct current) submarine cable insulating material with high thermal conductivity and restraining tree to improve electrical properties of epoxy resin in high temperature region. In order to find dispersion of the specimen, the cross sectional area of nano-composite material is observed by using the SEM(Scanning Electron Microscope) and it is conformed that each specimen is evenly distributed without the cohesion. As a result, it is confirmed that the strength of breakdown of all specimen at 50 [$^{\circ}C$] decreased more than that of the dielectric breakdown strength at room temperature. When temperature increases from 50 [$^{\circ}C$] to 100 [$^{\circ}C$], we have confirmed that breakdown strength of virgin specimen decreases, but specimens with added MgO show constant dielectric breakdown strength.

• 한국신재생에너지학회:학술대회논문집
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• 2006.11a
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• pp.348-351
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• 2006

Bipolar plate, which forms about 50% of the stack cost, is an important core part with polymer electrolyte membrane in PEMFC. Bipolar plates have been commonly fabricated from graphite meterial having high electrical conductivity and corrosion resistance. Lately, many researchers have concentrated their efforts on the development of metallic bipolar plate and stainless steel has been considered as a potential material for metallic bipolar plate because of its high strength, chemical stability, low gas permeability and applicability to mass production. However, it has been reported that its inadequate corrosion behavior under PEMFC environment lead to a deterioration of membrane by dissolved metal ions and an increase in contact resistance by the growth of passive film therefore, its corrosion resistance as well as contact resistance must be improved for bipolar plate application. In this work, several types of coating were applied to 316L and their electrical conductivity and corrosion resistance were evaluated In the simulated PEMFC environment. Application of coating gave rise to low interfacial contact resistances below $19m{\Omega}cm^2$ under the compress force of $150N/cm^2$. It also made the corrosion potential to shift in the posit ive direct ion by 0.3V or above and decreased the corrosion current from ca. $9{\mu}A/cm^2$ to ca. $0.5{\mu}A/cm^2$ in the mixed solution of $0.1N\;N_2SO_4$ and 2ppm HF A coat ing layer under potentiostatic control of 0.6V and $0.75V_{SCE}$ for 500 hours or longer showed some instabilities, however, no significant change in coat Ing layer were observed from Impedance data. In addition, the corrosion current maintained less than $1{\mu}A/cm^2$ for most of time for potentiostatic tests. It indicates that high electrical conductivity and corrosion resistance can be obtained by application of coatings in the present work.