• Bulletin of the Korean Chemical Society
• /
• 제31권10호
• /
• pp.2909-2912
• /
• 2010

Hydrogenated microcrystalline silicon (${\mu}c$-Si:H) thin film for solar cells is prepared by plasma-enhanced chemical vapor deposition and physical properties of the ${\mu}c$-Si:H p-layer has been investigated. With respect to stable efficiency, this film is expected to surpass the performance of conventional amorphous silicon based solar cells and very soon be a close competitor to other thin film photovoltaic materials. Silicon in various structural forms has a direct effect on the efficiency of solar cell devices with different electron mobility and photon conversion. A Raman microscope is adopted to study the degree of crystallinity of Si film by analyzing the integrated intensity peaks at 480, 510 and $520\;cm^{-1}$, which corresponds to the amorphous phase (a-Si:H), microcrystalline (${\mu}c$-Si:H) and large crystals (c-Si), respectively. The crystal volume fraction is calculated from the ratio of the crystalline and the amorphous phase. The results are compared with high-resolution transmission electron microscopy (HR-TEM) for the determination of crystallinity factor. Optical properties such as refractive index, extinction coefficient, and band gap are studied with reflectance spectra.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
• /
• pp.481-484
• /
• 1999

The undoped-InSe and Sn-doped InSe single crystals were grown by vertical Bridgman method and their properties were invesigated. These crystals were obtained by lowering the quartz ampoule for growth in the furnace and growth rate at optimum condition is 0.4mm/hr. The orientations and the crystallinites of these crystals were identified by X-ray diffraction(XRD), double crystal rocking curve(DCRC) and etch-pit density(EPD) measurements. From the Raman spectrum at room temperature, TO, LO modes together with their overtones and combinations were observed. Optical properties were investigated by photoluminescence at 12K and direct band gap of these crystals obtained from optical absorption spectrum. Compared with undoped-lnSe, electrical properties of Sn-doped InSe were increased and the electrical conductivity type were n-type. But electrical properties along growth direction of crystals and radial direction of wafer showed nearly uniform distribution.

• 한국세라믹학회지
• /
• 제28권8호
• /
• pp.585-592
• /
• 1991

ZnO films were deposited onto Corning glass 7059 substrate in the temperature range from $200^{\circ}C$ to $450^{\circ}C$ by chemical vapor deposition technique using the hydrolysis of Diet ylzinc (DEZ). As the deposition temperature increased from $200^{\circ}C$ to $350^{\circ}C$, the deposition rate increased with the apparent activation energy of ∼23kJ/mole. Further increase of the deposition temperature above $400^{\circ}C$, however, resulted in a reduction of the rate. It was found that ZnO film grew with a strong C-axis preferred orientation at the temperature of $400^{\circ}C$. As the deposition temperature increased, the film resistivity decreased down to ∼0.2 $\Omega$cm at $450^{\circ}C$. The electrical resistivity was governed more likely by electron concentration rather than by electron mobility. Average optical transmission of the films in the optical wavelength range of 400 nm to 900 nm was over 90% and the optical energy band gap of 3.28∼3.32 eV was obtained from the direct transition.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1992년도 춘계학술대회 논문집
• /
• pp.30-33
• /
• 1992

This thesis was investigated on ion-induced characteristics in a-$Se_{75}Ge_{25}$ positive and negative resists for focused-ion-beam microlithogaphy. The exposed a-$Se_{75}Ge_{25}$ inorganic thin film shows an increase in optical absorption after exposure to~$10_{16}$ dose of Ga+. The observed shift in the absorption edge toward longer wavelengths is consistent with that in films exposed to band-gap photons(~$10^{21}$photons/cm2). This result may be related with microstructural rearrangements with in the short range of SeGe network. Due to changes in the short range order, the chemical bonding may be affected, which results in increased chemical dissolution in ion-induced film. Also, this resist exhibits good thermal stability because of its high Tg(~$220^{\circ}C$). When focused ion beams are used for direct exposure of resist over a substrate, unwanted implantation of the substrate may be an issue. A possible way to avoid this is to match the thickness of the resist to the range of ions in the resist. Thin aspect is currently under investigation.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1999년도 추계학술대회 논문집
• /
• pp.464-467
• /
• 1999

The undoped-InSe and Sn-doped InSe single crystals were grown by vertical Bridgman method and their properties were invesigated. The orientations and the crystallinites of these crystals were identified by X-ray diffraction(XRD), double crystal rocking curve(DCRC) and etch-pit density(EPD) measurements. From the Raman spectrum at room temperature, TO, LO modes and together with their overtones and combinations were observed. Optical properties were inves ated by PL at 12K and direct band gap of these crystals obtained from optical absorption spectrum. Compared with undo&-InSe, electrical properties of Sn-doped InSe were increased and the electrical conductivity type were n-type. But electrical properties along growth direction of crystals and radial direction of wafer showed nearly uniform distribution. The Zn diffusion mechanism in InSe could be explained by interstitial-substitutional and vacancy complex models and the activation energy of 1.15-3.01eV were needed for diffusion.fusion.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2009년도 제38회 동계학술대회 초록집
• /
• pp.190-190
• /
• 2010

Zinc oxide is the most attractive material due to the large direct band gap (3.37 eV), excellent chemical and thermal stability, and large exciton binding energy (60 meV). Recently, ZnO nanorods were used as the high efficient antireflection coating layer of solar cells based on silicon (Si). In this reports, we studied the effects of rapid thermal annealing (RTA) treatment on optical properties of ZnO nanorods. For fabrication of ZnO nanorods, there are many methods such as hydrothermal method, sol-gel method, and metal organic chemical vapor deposition method. Among of them, we used the conventional wet chemical method which is simple and low temperature growth. In order to synthesize the ZnO nanorods, the ZnO films were deposited on Si substrate by RF magnetron sputtering at room temperature and the samples were dipped to aqua solution containing the zinc nitrate and hexamethylentetramines (HMT). The synthesis process was achieved in keeping with temperature of $90-95^{\circ}C$ and under constant stirring. The morphology of ZnO nanorods on glass and Si was characterized by scanning electron microscopy. For the analysis of antireflection performance, the reflectance and transmittance were measured by spectrophotometer. And for analyzing the effects of RTA treatment on ZnO nanorods, crystalline properties were investigated by X-ray diffraction measurements and optical properties was estimated by photoluminescence spectra.

• Advances in nano research
• /
• 제7권1호
• /
• pp.13-24
• /
• 2019

Well-crystalline $SnO_2$ nanoparticles of 4-5 nm size with different In contents were synthesized by hydrothermal process at relatively low temperature and characterized by transmission electron microscopy (TEM), microRaman spectroscopy and photoluminescence (PL) spectroscopy. Indium incorporation in $SnO_2$ lattice is seen to cause a lattice expansion, increasing the average size of the nanoparticles. The fundamental phonon vibration modes of $SnO_2$ lattice suffer a broadening, and surface modes associated to particle size shift gradually with the increase of In content. Incorporation of In drastically enhances the PL emission of $SnO_2$ nanoparticles associated to deep electronic defect levels. Although In incorporation reduces the band gap energy of $SnO_2$ crystallites only marginally, it affects drastically their dye degradation behaviors under UV illumination. While the UV degradation of methylene blue (MB) by undoped $SnO_2$ nanoparticles occurs through the production of intermediate byproducts such as azure A, azure B, and azure C, direct mineralization of MB takes place for In-doped $SnO_2$ nanoparticles.

• Journal of Electrochemical Science and Technology
• /
• 제13권3호
• /
• pp.377-389
• /
• 2022

The current global energy supply depends heavily on fossil fuels. This makes technology such as direct water splitting from harvesting solar energy in photoelectrochemical (PEC) systems potentially attractive due to its a promising route for environmentally benign hydrogen production. In this study, undoped and nickel-doped molybdenum oxide photoanodes (called photoanodes S₁ and S₂ respectively) were synthesized through electrodeposition by applying -1.377 V vs Ag/AgCl (3 M KCl) for 3 hours on an FTO-coated glass substrate immersed in molibdatecitrate aqueous solutions at pH 9. Scanning electron microscopy (SEM), atomic force microscopy (AFM), energy-dispersive X-ray spectroscopy (EDS), and X-ray photoelectron spectroscopy (XPS) were used for microstructural and compositional characterizations of the photoanodes. In addition, the optical and photoelectrochemical characterizations of these photoanodes were performed by UV-Visible spectroscopy, and linear scanning voltammetry (LSV) respectively. The results showed that all the photoanodes produced exhibit conductivity and catalytic properties that make them attractive for water splitting application in a photoelectrochemical cell. In this context, the photoanode S₂ exhibited better photocatalytic activity than the photoanode S₁. In addition, photoanode S₂ had the lowest optical band-gap energy value (2.58 eV), which would allow better utilization of the solar spectrum.

• Transactions on Electrical and Electronic Materials
• /
• 제18권1호
• /
• pp.7-12
• /
• 2017

This work takes place in the context of the development of a transport phenomena simulation based on group III nitrides. Gallium and boron nitrides (GaN and BN) are both materials with interesting physical properties; they have a direct band gap and are relatively large compared to other semiconductors. The main objective of this paper is to study the effect of boron content on the electron transport of the ternary compound $B_xGa_{(1-x)}N$ and the effect of the temperature of this alloy at x=50% boron percentage, specifically the piezoelectric, acoustic, and polar optical scatterings as a function of the energy, and the electron energy and drift velocity versus the applied electric field for different boron compositions ($B_xGa_{(1-x)}N$), at various temperatures for $B_{0.5}Ga_{0.5}N$. Monte carlo simulation, was employed and the three valleys of the conduction band (${\Gamma}$, L, X) were considered to be non-parabolic. We focus on the interactions that do not significantly affect the behavior of the electron. Nevertheless, they are introduced to obtain a quantitative description of the electronic dynamics. We find that the form of the velocity-field characteristic changes substantially when the temperature is increased, and a remarkable effect is observed from the boron content in $B_xGa_{(1-x)}N$ alloy and the applied field on the dynamics of holders within the lattice as a result of interaction mechanisms.

• Nuclear Engineering and Technology
• /
• 제52권11호
• /
• pp.2585-2593
• /
• 2020

Swift heavy ion (SHI) beam irradiation can generate desirable defects in materials by transferring sufficient energy to the lattice that favours huge possibilities in tailoring of materials. The effect of Ag¹⁵⁺ ion irradiation with energy 200 MeV on spray deposited V₂O₅ thin films of thickness 253 nm is studied at various ion doses from 5 × 10¹¹ to 1 × 10¹³ ions/㎠. The XRD results of pristine film confirmed orthorhombic structure of V₂O₅ and its average crystallite size was found to be 20 nm. The peak at 394 cm^-1 in Raman spectra confirmed O-V-O bonding of V₂O₅, whereas 917 cm^-1 arise because of distortion in stoichiometry by a loss of oxygen atoms. Raman peaks vanished completely above the ion fluence of 5 × 10¹² ions/㎠. Optical studies by UV-Vis spectroscopy shows decrement in transmittance with an increase in ion fluence up to 5 × 10¹² ions/㎠. The red shift is observed both in the direct and indirect band gaps until 5 × 10¹² ions/㎠. The surface topography of the pristine film revealed sheath like structure with randomly distributed spherical nano-particles. The roughness of film decreased and the density of spherical nanoparticles increased upon irradiation. Irradiation improved the conductivity significantly for fluence 5 × 10¹¹ ions/㎠ due to band gap reduction and grain growth.