• Research in Plant Disease
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• v.8 no.1
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• pp.50-54
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• 2002

A total of 55 Colletotrichum isolates from strawberry plants with anthracnose symptoms(crown rot) were inhibited in mycelial growth on potato-dextrose agar(PDA) amended with fungicides in variable degrees depending on the chemicals used, especially showing no growth on PDA with 1 mg/m/tricyclazole. However, in the detached leaf test by treating chemicals before or after inoculation of Colletotrichum sp., tricyclazole was little effective in controlling symptom development; instead azoxystrobin, which had low in vitro inhibition of mycelial growth, inhibited strongly the symptom development. Some chemicals were tested for the control of strawberry crown rot in greenhouse using three methods, sprays soil drenching and plant dipping. No or little control effect were made by chemical spray and soil drenching, but plant dipping in chemical solution, especially azoxystrobin: reduced crown rot development by about 50% in the greenhouse suggesting that the azoxystrobin treatment may be an effective control method of the crown rot of strawberry. No differences in the control efficacy were noted according to the dipping time and chemical concentration of azoxystrobin not less than 10 min and 250 mg/m/, respectively.

• Food Science of Animal Resources
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• v.32 no.1
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• pp.84-90
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• 2012

This study was performed to determine the quality characteristics and shelf-life of low-fat sausages (LFS) with 0.4% sodium tripolyphosphate (STPP) alone or in combination with a 10% trisodium phosphate (TSP) solution during refrigerated storage. When 0.4% STPP was added, no differences in pH values were observed. However, pH values increased with the addition of the TSP solution when 0.4% STPP was incorporated. The addition of STPP into LFS decreased redness and the dipping in the TSP solution increased yellowness (p<0.05). Total bacteria and Listeria monocytogenes, which inoculated Log $10^{3-4}$ colony forming units (CFU/g) were increased with increased storage time. At 4 wk of storage, total bacteria and Listeria monocytogenes reached levels of 8.03-8.22 Log CFU/g, however they decreased to 7.89 Log CFU/g at 8 wk of storage time. Due to the pH increases, Listeria monocytogenes significantly increased in LFS dipping with 10% TSP. Based on these results, LFS dipping with 10% TSP solution promoted the growth of Listeria monocytogenes, regardless of STPP addition. These results indicated that 0.4% STPP addition and dipping with TSP affected the pH and color, however, it didn't extend the shelf-life of LFSs during refrigerated storage.

• Journal of Practical Agriculture & Fisheries Research
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• v.16 no.1
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• pp.55-66
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• 2014

This study has been conducted to investigate the treatment time and concentration of GA₃ solution dipping for labor saving in 'Campbell Early' grapevine. The rachis growth at harvest was reduced by GA₃ solution dipping before 5 days flowering, and increased significantly by GA₃ solution dipping treatment at full bloom and after 5 days full bloom. GA₃ 5, 10, 20 mg·L^-1 dipping treatment before 5 days flowering and GA₃ 20 mg·L^-1 treatment of full bloom and after 5 days full bloom showed a rachis twist phytotoxicity symptom. The optimum GA₃ concentrations for rachis growth promotion without phytotoxicity were 5 mg·L^-1 and 10 mg·L^-1. The degree of compact berry, bloom, skin color, SSC and acidity at harvest by GA₃ solution dipping treatment time between concentration were not different from those of control. But the fruit berry weight was decreased by before 5 days flowering treatment when compared with control. There were no differences in full bloom and after 5 days full bloom treatment. The occurrence percent of berry cracking at before 5 days flowering and after 5 days full bloom treatment were significantly increased by GA₃ treatment. The bitter rot occurrence of berry at harvest was not affected by GA₃ treatment. Total rachis length of fruit cluster was increased by full bloom and 5 days after full bloom treatment. The length of rachis increased without reference to them position at full bloom and 5 days after bloom treatment. Accordingly, GA₃ 5 mg·L^-1 solution dipping treatment at full bloom and 5 days after full bloom were can be effectively for rachis growth promotion.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.2
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• pp.63-67
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• 2011

We investigated effects of bonding conditions on the peel strength of rigid printed circuit board (RPCB)/ flexible printed circuit board (FPCB) joints bonded using a thermo-compression bond method, The electrodes on the FPCB were coated with Sn by a dipping process. We confirmed that the bonding temperature and bonding time strongly affected the bonding configuration and strength of the joints. Also, the peel strength is affected by dipping conditions; the optimum dipping condition was found to be temperature of $270^{\circ}C$ and time of 1s. The bonding strength linearly increased with increasing bonding temperature and time until $280^{\circ}C$ and 10s. The fracture energy calculated from the F-x (Forcedisplacement) curve during a peel test was the highest at bonding temperature of $280^{\circ}C$.

• Tribology and Lubricants
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• v.24 no.2
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• pp.63-71
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• 2008

Friction and adhesion tests were conducted to investigate tribological characteristics of materials for MEMS/NEMS using atomic force microscope (AFM). AFM Si tips were chemically modified with a self-assembled monolayer (SAM) derived from trichlorosilane like octadecyltrichlorosilane (OTS) and (1H, 1H, 2H, 2H-perfluorooctyl) trichlorosilane (FOTS), and various materials, such as Si, Al, Au, Cu, Ti and PMMA films, were prepared for the tests. SAMs were coated on Si wafer by dipping method prior to AFM tip to determine a proper dipping time. The proper dipping time was determined from the measurements of contact angle, surface energy and thickness of the SAMs. AFM tips were then coated with SAMs by using the same coating condition. Friction and adhesion forces between the AFM Si tip modified with SAM and MEMS/NEMS materials were measured. These forces were compared to those when AFM tip was uncoated. According to the results, after coating OTS and FOTS, the friction and adhesion forces on all materials used in the tests decreased; however, the effect of SAM on the reduction of friction and adhesion forces could be changed according to counterpart materials. OTS was the most effective to reduce the friction and adhesion forces when counterpart material was Cu film. In case of FOTS, friction and adhesion forces decreased the most effectively on Au films.

• Applied Chemistry for Engineering
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• v.7 no.4
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• pp.691-697
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• 1996

The NR films were prepared with mixing of natural rubber latex(NRL) with various additives, and NR/CR films were prepared by blend ratio of chloroprene rubber latex(CRL). The swelling degree and the mechanical properties of these films were measured according to the procure time. As a result, optimum condition were showed the swelling degree : 80~85%, precure time : 48~60hrs., and tensile strength was reduced but elongation was increased as increasing the blend ratio of CRL. On the mechanical properties of films prepared by different dipping process in these optimum condition, the tensile strength and tear strength of NR/CR films by one dipping process are better than NR-d-CR films by two dipping process. The surface of these films were observed with scanning electron microscopy(SEM). It was found that phase separation was occured as increasing the blend ratio of CRL.

• Journal of the Korean institute of surface engineering
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• v.11 no.1
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• pp.5-13
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• 1978

This experiment intends to study Zn-coating weight through galvanixing process. A through examination has been carried out on the change of steel-composition, galvanizing-temperature, dipping-rime, Fe-loss when other factors were regular. Activation energy needed for Fe-loss was obtained and within this sample, the best condition which has influence on coating weight was found so as to reduce Fe-loss. As Fe-loss was diminidhed, the amount of product of Dross and Zn-using amount per total products could be reduced. The results of experiments are as follow. 1. Zn-coating thickness was increased by the rising Zn-bathtemperature and was the maximum at 8-minutes dipping time. 2. The coating weight was greatly influency by Si. As in other samples, the proportion of increasing was very rate after 20minutes. If the dipping time prolonged, the increasing amounts of Fe-loss are more greatly. 3. Activation Energy needed for Fe-loss was as follows Such numerical values were most equal to those of the activation energy which had influences on the growth of ${\gamma}$-phase. Sample - I = 18,500 Cal/mole Sample - III = 22,000 Cal/mole Sample - V = 42,300 Cal/mole

• Journal of Practical Agriculture & Fisheries Research
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• v.17 no.1
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• pp.133-144
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• 2015

A study was conducted to examine treatment method, proper concentration, and treatment time of gibberellin(GA₃) for human labor saving at harvest in 'Campbell Early' grapevine. Fruit berry thinning reduced labor by GA₃ 40ppm treatment of 5 days prior to full bloom, and, at GA₃ 10, 20, and 40ppm during full bloom, by 14.27~19.15 minutes/tree. Therefore, although labor was reduced by dipping treatment at 40ppm of 5 days prior to full bloom and 20 and 40 ppm during full bloom, severe shattering was observed at 40ppm dipping treatment, and soluble solids decreased, which suggests difficulty with commercialization. The result suggests that proper time and concentration of GA₃ fruit cluster dipping treatment at full bloom and 10 and 20ppm, respectively.

• Journal of the Korean Ceramic Society
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• v.35 no.9
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• pp.969-973
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• 1998

Pb(Zr, Ti)O3 (PZT) (Zr:Ti= 52: 48) thin films were prepared on MgO(100) substrates by dipping-py-rolysis process using metal naphthenates as starting materials. Thin films were fabricated by spin coating technique and the precursor films were prefired at 20$0^{\circ}C$ in air for 0.5, 1, 2, 3, and 24 h followed by final heat treatment at 75$0^{\circ}C$ for 30min. Film prefired for 24 h lost orientational properties and pole figure analysis showed the lost of the epitaxial relationship between the films and substrate while highly a/c-axis oriented thin films were obtained for the samples prefired for 1, 2, and 3h.

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.205-208
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• 2001

Schottky barrier diodes are fabricated on a intrinsic GaN(4${\mu}{\textrm}{m}$) epitaxial structure grown by rf plasma molecular beam epitaxy (MBE) on sapphire substrates. First, We make Ohmic electrodes (Ti/Al/Ti/Au) by evaporator. Next, we contact RuO$_2$ by dipping in the solution (RuCl$_3$.HClO$_4$), and then we deposit Ni/Au on the surface of RuO$_2$ by evaporator. We study the electrical characteristics of GaN Schottky barrier diodes made by these methods. Measurements are C-V, I-V, SEM, EDX, and XRD for the characteristics of devices. Thickness of RuO$_2$ layer depends on supplied voltage and dipping time. Device of thinner RuO$_2$ layer have a good Schottky characteristics compare with device of thicker RuO$_2$ layer