• 제목/요약/키워드: diode laser

검색결과 1,017건 처리시간 0.028초

Widely Tunable 1.55-${\mu}m$ Detuned Dual-Mode Laser Diode for Compact Continuous-Wave THz Emitter

  • Kim, Nam-Je;Leem, Young-Ahn;Ko, Hyun-Sung;Jeon, Min-Yong;Lee, Chul-Wook;Han, Sang-Pil;Lee, Dong-Hun;Park, Kyung-Hyun
    • ETRI Journal
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    • 제33권5호
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    • pp.810-813
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    • 2011
  • We report the use of a widely tunable detuned dual-mode laser diode (DML) as a compact and portable continuous-wave THz emitter. The wavelength difference between the two lasing modes of this DML can be tuned from 2.4 nm to 9.3 nm by using integrated microheaters. The power difference between these modes is less than 1 dB, and the side-mode suppression ratio is greater than 30 dB over the entire tuning range.

고농도의 Mg가 도핑된 GaN층을 이용한 GaN계 청자색 레이저다이오드의 동작 전압 감소 (Reduction of Operating Voltage of GaN-based Blue-violet Laser Diode by using Highly Mg Doped GaN Layer)

  • 곽준섭
    • 한국전기전자재료학회논문지
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    • 제17권7호
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    • pp.764-769
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    • 2004
  • In order to reduce operating voltage of the GaN based blue-violet laser diodes, the effect of highly Mg doped GaN layer, which was grown below ohmic contact metals, on contact resistivity as well as operating voltage has been investigated. The addition of the highly Mg doped GaN layer greatly reduced contact resistivity of Pd/Pt/Au ohmic contacts from $5.2 \times {10}^-2 \Omegaㆍ$\textrm{cm}^2$ to 7.5 \times {10}^-4 \Omegaㆍ$\textrm{cm}^2$$. In addition, it also decreased device voltage at 20 mA by more than 3 V. Temperature- dependent sheet resistivity of the highly Mg doped GaN layer suggested that the reduction of the contact resistivity could be attributed to predominant current flow at the interface between the Pd/Pt/Au contacts and p-GaN through a deep level defect band, rather than the valence band.

주입광원에 따른 WDM-PON 에서의 통신 품질 특성 연구 (Study of Signal Characteristics in WDM-PON using Injection Locked Fabry-Perot Laser Diode)

  • 배준기;신현종;이재환
    • 한국정보통신설비학회:학술대회논문집
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    • 한국정보통신설비학회 2008년도 정보통신설비 학술대회
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    • pp.309-312
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    • 2008
  • We study signal characteristics of the injection-locked Fabry-Perot laser diodes(FP-LDs) for the development of a costeffective WDM-PON solution. The output power and system performance of WDM-PON using injection locked FP-LD are depend on optical characteristics of injection source. The effect of optical power and polarization state of the injection source experimentally investigated. We also measured BER characteristics of the directly modulated FPLD and its power penalty at the BER of $10^{-9}$.

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Influence of Emitter Width on the Performance of 975-nm (In,Ga)(As,P)/(Al,Ga)As High-power Laser Diodes

  • Yang, Jung-Tack;Kim, Younghyun;Pournoury, Marzieh;Lee, Jae-Bong;Bang, Dong-Soo;Kim, Tae-Kyung;Choi, Woo-Young
    • Current Optics and Photonics
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    • 제3권5호
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    • pp.445-450
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    • 2019
  • The influence of high-power laser diode (HPLD) emitter width on the device performance is investigated for 975-nm (In,Ga)(As,P)/(Al,Ga)As broad-area HPLDs, using self-consistent electro-thermal-optical simulation. To guarantee the simulation's accuracy, simulated results are matched with the measured results for a sample HPLD with fitting parameters. The influences of HPLD emitter width on temperature distribution, output power, and the beam product parameter (BPP) are analyzed for three different emitter widths of 50, 70, and $90{\mu}m$. It is found that a device with smaller emitter width exhibits both thermal rollover and thermal blooming at lower output power, but smaller BPP.

Therapeutic Effects of Low-Level Laser Combined with LED on Post-operative Hand

  • Jeong-Sun Lee;Hwa-Kyung Shin
    • The Journal of Korean Physical Therapy
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    • 제36권1호
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    • pp.14-20
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    • 2024
  • Purpose: This study was performed to identify and investigate the therapeutic effects of low-level laser (LLL) combined with a light-emitting diode (LED) on post-operative wound healing and functional recovery after hand orthopedic surgery. Methods: The study subjects were twenty patients who had passed the acute inflammatory phase after hand orthopedic surgery and were assigned equally to an experimental or a control group. Phototherapy was administered three times weekly for two weeks. Changes in wound length, edema, pain, and hand function were measured. Results: Significant differences in wound length, edema, pain, and hand function were observed between the experimental and control groups (p<0.05). However, no significant intergroup difference was observed (p>0.05). Nonetheless, a comparison of results showed changes in the experiment group over the two-week study period were significantly greater than in the control group (p<0.05). Conclusion: These findings show that combined LLL plus LED phototherapy positively influences post-operative hand rehabilitation.

Development of a Laser Absorption NO/$NO_2$ Measuring System for Gas Turbine Exhaust Jets

  • Zhu, Y.;Yamada, H.;Hayashi, S.
    • 한국추진공학회:학술대회논문집
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    • 한국추진공학회 2004년도 제22회 춘계학술대회논문집
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    • pp.802-806
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    • 2004
  • For the protection of the local air quality and the global atmosphere, the emissions of trace species including nitric oxides (NO and NO$_2$) from gas turbines are regulated by local governments and by the International Civil Aviation Organization. In-situ measurements of such species are needed not only for the development of advanced low-emission combustion concepts but also for providing emissions data required for the sound assessment of the effects of the emissions on environment. We have been developing a laser absorption system that has a capability of simultaneous determination of NO and NO$_2$concentrations in the exhaust jets from aero gas turbines. A diode laser operating near 1.8 micrometer is used for the detection of NO while a separated visible tunable diode laser operating near 676 nanometers is used for NO$_2$. The sensitivities at elevated temperature conditions were determined for simulated gas mixtures heated up to 500K in a heated cell of a straight 0.5 m optical path. Sensitivity limits estimated as were 30 ppmv-m and 3.7 ppmv-m for NO and NO$_2$, respectively, at a typical exhaust gas temperature of 800K. Experiments using the simulated exhaust flows have proven that $CO_2$ and $H_2O$ vapor - both major combustion products - do not show any interference in the NO or NO$_2$ measurements. The measurement system has been applied to the NO/NO$_2$ measurements in NO and NO$_2$ doped real combustion gas jets issuing from a rectangular nozzle having 0.4 m optical path. The lower detection limits of the system were considerably decreased by using a multipass optical cell. A pair of off-axis parabola mirrors successfully suppressed the beam steering in the combustion gas jets by centralizing the fluctuating beam in sensor area of the detectors.

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다이오드 레이저로 여기되는 Tm:YAG 레이저의 출력 특성연구 (Output characteristics of diode-laser-pumped Tm:YAG laser)

  • 정태문
    • 한국광학회지
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    • 제11권4호
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    • pp.289-293
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    • 2000
  • 다이오드 레이저 뒷면 여기 방식을 이용하여 발진 파장이 $2.02\mu\textrm{m}$인 중적외선 Tm:YAG 레이저를 제작하고, 출력 특성을 조사하였다. 레이저의 출력은 Tm:YAG 결정의 온도에 민감하게 변화하였으며, 레이저의 출력경이 곡면경인 경우에 평면적인 격우보다 더 큰 출력을 얻을 수 있었다. 곡면경을 사용하고 Tm:YAG 결정을 지지하는 구리 지지대의 온도를 $6^{\circ}C$로 낮추었을 때, 최고 1.2W의 출력을 얻을 수 있었다. 이 때, 문턱 여기 출력은 약 1.6W이었고, 기울기 효율(slope efficiency) 및 광학 효율(optical to optical efficiency)은 각각 29%와 20%이었다.

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반도체레이저 단면여기 Nd:S-VAP 레이저의 내부공진기 제2고조파 출력 특성 (Output characteristics of intracavity frequency doubling of laser-diode end-pumped Nd:S-VAP laser)

  • 박준학
    • 한국광학회지
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    • 제11권4호
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    • pp.294-298
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    • 2000
  • 반도체레이저로 단면 여기시킨 Nd:VAP 레이저의 내부공진기 제2고조파 출력특성을 조사하였다. 유도방출 단면적과 형광수명의 곱이 커 낮은 발진문턱 특성을 갖는 Nd:S-VAP 매질은 컴팩트한 마이크로칩 레이저에 적합하다. 내부공진기를 이용한 제2고조파 발진문턱에너지가 81 uJ로 측정되어 쉽게 발진됨을 확인하였다. 여기에너지 $2\mu\textrm{J}$에서 제2고조파 에너지 $126\mu\textrm{J}$을 얻었고, 내부공진기 제2고조파의 출력을 계산하여 이론적인 해석 근거를 제시하였다. Q-스위치된 제2고조파 출력은 펄스폭 26ns에 펄스당 에너지 $15\mu\textrm{J}$로 저출력에서도 시.공간적으로 깨끗한 펄스를 얻었으며, $M^2$도 1.47로 우수한 빔 특성을 나타내었다.

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657 nm 가시광 반도체레이저의 선폭 축소와 파장가변특성 (Linewidth Reduction and Wavelength Tuning Characteristics of a 657 nm Visible Laser Diode)

  • 윤태현;서호성;정명세
    • 한국광학회지
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    • 제5권1호
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    • pp.100-105
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    • 1994
  • Littrow형 회절격자를 이용한 확장공진기를 657 nm 영역에서 연속동작하는 상용 InGaAsP 단일모우드 가시광 반도체를 이용하여 구성하였다. 제작한 확장공진기 시스템에서 657 nm InGaAsP 가시광 반도체 레이저의 선폭은 60 MHz에서 10 MHz 이하로 축소되었다. Littrow 회절격자의 설치각도와 레이저의 온도 및 주입 전류에 대한 반도체레이저의 주파수(파장) 의존성을 레이저 파장계를 이용하여 측정하였다. 상용 CQL820D 가시광 반도체레이저의 회절격자의 설치각도, 레이저 온도 및 주입전류에 대한 비례계수는 각각 1THz/mrad, 32.4 GHz/K, 그리고 6.14 GHz/mA 이었다.

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흘로그램 간섭계를 이용한 광픽업 베이스의 미소 열변형 측정 (Measurement of Micro Thermal Deformation of Optical Pick-up Base Using Holographic Interferometry)

  • 서영민;강신일
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2002년도 춘계학술대회 논문집
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    • pp.191-194
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    • 2002
  • In optical pick-up, optical components such as objective lens, collimator, mirror, laser diode and photo diode are mounted on the pick-up base. These components must keep their original position during operation for proper transmittance of information from laser diode to optical disk and back to photo diode. However, micro thermal deformation of pick-up base which is induced by thermal environment during operation can deteriorate the performance of optical pick-up. Therefore, it is important to measure and analyze the thermal deformation behavior of pick-up base under thermal environment. In the present study, a measurement system using holographic interferometry was designed to measure micro thermal deformation of pick up base. The measurement system was verified by using the deformation of cantilever with prescribed motion actuated by PZT with 1 nm resolution. Interferometric measurement was compared quantitatively with that induced by PZT actuator. Finally, micro thermal deformation of pick-up base under actual thermal environment was measured using the present holographic interferometry and the results were analysed.

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