• Title/Summary/Keyword: diode laser

Search Result 1,017, Processing Time 0.029 seconds

Fabrication and characterization of InGaAsP/InP multi-quantum well buried-ridge waveguide laser diodes (Buried-Ridge Waveguide Laser Diode 제작 및 특성평가)

  • 오수환;이지면;김기수;이철욱;고현성;박상기
    • Korean Journal of Optics and Photonics
    • /
    • v.14 no.6
    • /
    • pp.669-673
    • /
    • 2003

  • We fabricated a buried-ridge waveguide laser diode (B-RWG LD) which has more advantages for obtaining lateral single mode operation on the same ridge width and for the planarization of the device surface, compared to the conventional RWG LD. In this LD, the difference of the lateral effective refractive index can be controlled by the thickness of the InGaAsP layer which is grown on the active and the p-InP layers. The InGaAsP multiple quantum well was grown on a n-InP substrate by the CBE. The buried ridge structure was formed by selective wet etchings, followed by liquid phase epitaxy methods. The fabricated LD with the ridge width of 7 ${\mu}{\textrm}{m}$ showed a linear increase of the optical power up to 20 ㎽ without any kinks and a saturated output power of more than 80 ㎽. By measuring the far field pattern, we demonstrate that LDs with the ridge widths of 5 ${\mu}{\textrm}{m}$ and 7 ${\mu}{\textrm}{m}$ were operated in a lateral single mode up to 2.7I$_{th}$ and 2.4I$_{th}$, respectively.ely.

  • https://doi.org/10.3807/KJOP.2003.14.6.669 인용 PDF KSCI