• Science of Emotion and Sensibility
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• v.14 no.4
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• pp.513-524
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• 2011

Digital Technology actively utilized in all spheres by rapid changes in information and knowledge demands transformations not only in the sociocultural and educational spheres but also specifically in the field of arts education. Digital Technology becomes a challenging factor for the field of arts education. In this study purposed a new teaching-learning approach method in arts education, called "Music Technology-Based Learning"(hereafter, MTBL), which is to, first, take interdisciplinary approaches combining various subjects in the field of arts education. In the case study was conducted to examine the educational effects of the MTBL approach to the liberal arts course in university: mind maps derived from 2 sessions (pre-class and post-class), evaluation sheets regarding self-directed learning and in-depth interviews with ten voluntary learners after the class were used as methods for data collection. The result of case study shows positive changes in the terms of the degrees of emotional sensibilities of the learners. Moreover, the research confirmed the potential of MTBL as a new teaching and learning methodology in art education.

• Journal of the Institute of Electronics Engineers of Korea CI
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• v.37 no.1
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• pp.1-10
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• 2000

In this paper, a new digital watermarking algorithm using wavelet transform is proposed. Wavelet transform is widely used for image processing, because of its multiresolution characteristic which conforms to the principles of the human visual system(HVS). It is also very efficient for localizing images in the spatial and frequency domain. Since wavelet coefficients can be characterized by the gaussian distribution, the proposed algorithm uses a gaussian distributed random vector as the watermark in order to achieve invisibility and robustness. After the original image is transformed using DWT(Discrete Wavelet Transform), the coefficients of all subbands including LL subband are utilized to equally embed the watermark to the whole image. To select perceptually significant coefficients for each subband, we use level-adaptive thresholding. The watermark is embedded to the selected coeffocoents, using different scale factors according to the wavelet characteristics. In the process of watermark detection, the similarity between the original watermark and the extracted watermark is calculated by using vector projection method. We analyze the performance of the proposed algorithm, compared with other transform-domain watermarking methods. The experimental results tested on various images show that the proposed watermark is less visible to human eyes and more robust to image compressions, image processings, geometric transformations and various noises, than the existing methods.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.1
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• pp.44-49
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• 2022

In this paper, we investigated current (I)- and voltage (V)-sweeping properties in a double-stack structure, Ge₂Sb₂Te₅/Ti/W-doped Ge₈Sb₂Te₁₁, a candidate medium for applications to multilevel phase-change memory. 200-nm-thick and W-doped Ge₂Sb₂Te₅ and W-doped Ge₈Sb₂Te₁₁ films were deposited on p-type Si(100) substrate using magnetron sputtering system, and the sheet resistance was measured using 4 point-probe method. The sheet resistance of amorphous-phase W-doped Ge₈Sb₂Te₁₁ film was about 1 order larger than that of Ge₂Sb₂Te₅ film. The I- and V-sweeping properties were measured using sourcemeter, pulse generator, and digital multimeter. The speed of amorphous-to-multilevel crystallization was evaluated from a graph of resistance vs. pulse duration (t) at a fixed applied voltage (12 V). All the double-stack cells exhibited a two-step phase change process with the multilevel memory states of high-middle-low resistance (HR-MR-LR). In particular, the stable MR state is required to guarantee the reliability of the multilevel phase-change memory. For the Ge₂Sb₂Te₅ (150 nm)/Ti (20 nm)/W-Ge₈Sb₂Te₁₁ (50 nm), the phase transformations of HR→MR and MR→LR were observed at t<30ns and t<65ns, respectively. We believe that a high speed and stable multilevel phase-change memory can be optimized by the double-stack structure of proper Ge-Sb-Te films separated by a barrier metal (Ti).