• International Journal of Precision Engineering and Manufacturing
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• v.7 no.2
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• pp.52-55
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• 2006

The OLEDs(Organic Light-Emitting Diodes) structure organizes the bottom layer using glass, ITO(indium thin oxide), hole injection layer, hole transport layer, emitting material layer, electron transport layer, electron injection layer and cathode using metal. OLED has various advantages. OLEDs research has been divided into structural side and emitting material side. The amount of emitting light and luminescence efficiency has been improved by continuing effort for emitting material layer. The emitting light mechanism of OLEDs consists of electrons and holes injected from cathode and anode recombination in emitting material layer. The mobilities of injected electrons and holes are different. The mobility of holes is faster than that of electrons. In order to get high luminescence efficiency by recombine electrons and holes, the balance of their mobility must be set. The more complex thin film structure of OLED becomes, the more understanding about physical phenomenon in each interface is needed. This paper observed what the thickness change of hole transport layer has an affection through the below experiments. Moreover, this paper uses numerical analysis about carrier transport layer thickness change on the basis of these experimental results that agree with simulation results.

• Korean Journal of Materials Research
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• v.20 no.4
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• pp.187-193
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• 2010

Chromium nitride (CrN) samples with two different layer structures (multilayer and single layer) were coated on bipolar plates of polymer electrolyte membrane fuel cells (PEMFC) using the reactive sputtering method. The effects with respect to layer structure on corrosion resistance and overall cell performance were investigated. A continuous and thin chromium nitride layer ($Cr_{0.48}\;N_{0.52}$) was formed on the surface of the SUS 316L when the nitrogen flow rate was 10 sccm. The electrochemical stability of the coated layers was examined using the potentiodynamic and potentiostatic methods in the simulated corrosive circumstances of the PEMFC under $80^{\circ}C$. Interfacial contact resistance (ICR) between the CrN coated sample and the gas diffusion layer was measured by using Wang's method. A single cell performance test was also conducted. The test results showed that CrN coated SUS316L with multilayer structure had excellent corrosion resistance compared to single layer structures and single cell performance results with $25\;cm^2$ in effective area also showed the same tendency. The difference of the electrochemical properties between the single and multilayer samples was attributed to the Cr interlayer layer, which improved the corrosion resistance. Because the coating layer was damaged by pinholes, the Cr layer prevented the penetration of corrosive media into the substrate. Therefore, the CrN with a multilayer structure is an effective coating method to increase the corrosion resistance and to decrease the ICR for metallic bipolar plates in PEMFC.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.292-295
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• 2002

In this work, transient characteristics of NPT(Non Punch Through)-IGBT(Insulated Gate Bipolar Transistor) have been studied with different temperatures analytically. Power losses are caused by heat generated in MIT-IGBT for steady state and transient state conditions. We therefore have focused on the analysis of excess carrier concentration and excess charge injected into N-drift layer with different temperatures and have obtained anode voltage drop during turn-off with lifetime of 2.4[${\mu}$s].

• Korean Journal of Materials Research
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• v.21 no.1
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• pp.34-38
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• 2011

In this study, the effects of an annealed buffer layer with different thickness on heterojunction diodes based on the ZnO/ZnO/p-Si(111) systems were reported. The effects of an annealed buffer layer with different thickness on the structural, optical, and electrical properties of zinc oxide (ZnO) films on p-Si(111) were also studied. Before zinc oxide (ZnO) deposition, different thicknesses of ZnO buffer layer, 10 nm, 30 nm, 50 nm and 70 nm, were grown on p-Si(111) substrates using a radio-frequency sputtering system; samples were subsequently annealed at $700^{\circ}C$ for 10 minutes in $N_2$ in a horizontal thermal furnace. Zinc oxide (ZnO) films with a width of 280nm were also deposited using a radio-frequency sputtering system on the annealed ZnO/p-Si (111) substrates at room temperature; samples were subsequently annealed at $700^{\circ}C$ for 30 minutes in $N_2$. In this experiment, the structural and optical properties of ZnO thin films were studied by XRD (X-ray diffraction), and room temperature PL (photoluminescence) measurements, respectively. Current-voltage (I-V) characteristics were measured with a semiconductor parameter analyzer. The thermal tensile stress was found to decrease with increasing buffer layer thickness. Among the ZnO/ZnO/p-Si(111) diodes fabricated in this study, the sample that was formed with the condition of a 50 nm thick ZnO buffer layer showed a strong c-axis preferred orientation and I-V characteristics suitable for a heterojunction diode.

• Journal of the Korean Society of Food Science and Nutrition
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• v.25 no.3
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• pp.497-503
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• 1996

In order to obtain basic data for the preparation of rice flour, chemical properties of grain layers were compared using Chucheongbyeo and Samgangbyeo, which are Japonica and Tongil type rice, respectively. The amylose contents of L6(center) layer in two different type of rice were the highest among 6 layers of rice grain tested. Reduction in amylose content was observed as the layer reached the surface, resulting in the lowest amylose content in the L0 layer. Amylose contents of L6 layer of Chucheongbyeo and Sangangbyeo were 3 and 2.2 times higher than those of L1 layer, respectively. Crude protein content of the L2 layer was the highest among 6 layers of rice grain tested and 2.2~2.5 times higher than that of whole milled rice. Crude fat content of grain layer was reduced as reaching the center layer. The crude fat contents of L6 layer of grain were 0.21% and 0.25% in Chucheongbyeo and Samgangbyeo, respectively. Most of free and bound lipids in L0 layer of two different rices were 69 : 31 and 79.5 : 20.5, respectively. Bound lipid content of grain layers increased as reaching the center layer. Major fatty acids in free lipids of both cultivars were linoleic acid, oleic acid, and palmitic acid. Linoleic acid content was higher than oleic acid in Chucheongbyeo, but oleic acid content was higher in Samgangbyeo. Palmitic and myristic acid contents of Chucheongbyeo were higher than those of Samgangbyeo, but stearic and linolenic acid contents were lower than those of Samgangbyeo.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.10a
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• pp.40-44
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• 2000

$Bi_2Sr_2Ca_nCu_{n+1}O_y$($n{\geq}0$; BSCCO)thin film is fabricated via two different processes using an ion beam sputtering method i.e. co-deposition and layer-by-layer deposition. A single phase of Bi2212 can be fabricated via the co-deposition process. While it cannot be obtained by the layer-by-layer process. Ultra-low growth rate in our ion beam sputtering system brings out the difference in Bi element adsorption between the two processes and results in only 30% adsorption against total incident Bi amount by layer-by-layer deposition, in contrast to enough Bi adsorption by co-deposition.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.9
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• pp.796-800
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• 2000

Bi$_2$Sr$_2$Ca$_{n}$Cu$_{n+1}$ O$_{y}$(n$\geq$0; BSCCO) thin film is fabricated via two different processes using an ion beam sputtering method i.e. co-deposition and layer-by-layer deposition. A single phase of Bi2212 can be fabricated via the co-deposition process. While it cannot be obtained by the layer-by-layer process. Ultra-low growth rate in our ion beam sputtering system brings out the difference in Bi element adsorption between the two processes and results in only 30% adsorption against total incident Bi amount by layer-by-layer deposition, in contrast to enough Bi adsorption by co-deposition.on.n.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.230-234
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• 2000

Bi$_2$Sr$_2$Ca$_{n}$Cu$_{n+1}$ O$_{y}$(n$\geq$0; BSCCO)thin film is fabricated via two different processes using an ion beam sputtering method i.e. co-deposition and layer-by-layer deposition. A single phase of Bi2212 can be fabricated via the co-deposition process. While it cannot be obtained by the layer-by-layer process. Ultra-law growth rate in our ion beam sputtering system brings out the difference in Bi element adsorption between the two processes and results in only 30% adsorption against total incident Bi amount by layer-by-layer deposition, in contrast to enough Bi adsorption by co-deposition.on.n.

• Proceedings of the IEEK Conference
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• 2000.11b
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• pp.241-244
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• 2000

To investigate the compact effect of the different area of an active layer and the different type of heatsink on the junction to ambient transient thermal impedance, we have characterized the thermal behavior of power MOSFETs that have three different areas of an active layer and two types of heatsink. To do so, the "cooling curve method" has been used in order to measure the junction-to-ambient transient thermal impedance Zthja that represents the thermal behavior of the devices. The measured data depiets that the larger area of an active layer gives the better-in other words. smaller-thermal impedance, and that the larger size of a heatsink improves the thermal impedance.

• 한국신재생에너지학회:학술대회논문집
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• 2011.11a
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• pp.81.2-81.2
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• 2011

The gas diffusion layer (GDL) consists of two main parts, the GDL backing layer, called as a substrate and the micro porous layer (MPL) coated on the GDBL. In this process, carbon particles of MPL penetrates to the GDBL consequently forms MPL penetration part. In this study, the micro porous layer (MPL) penetration thickness is determined as a design parameter of the GDL which affect pore size distribution profile through the GDL inducing different mass transfer characteristics. The pore size distribution and water permeability characteristics of the GDL are investigated and the cell performance is evaluated under fully/low humidification conditions. Transient response and voltage instability are also studied. In addition, to determine the effects of MPL penetration on the degradation, the carbon corrosion stress test is conducted. The GDL that have deep MPL penetration thickness shows better performance in high current density region because of enhanced water management, however, loss of penetrated MPL parts is shown after aging and it induces worse water management characteristics.