• ETRI Journal
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• v.46 no.2
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• pp.218-226
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• 2024

This paper presents a novel circular fractal ring monopole antenna for ultra-wideband (UWB) hardware with dual band-notched properties. The proposed antenna consists of four crescent-shaped nested rings, a tapered feeding line at the front of the dielectric material, and a semicircular ground plane on the backside. In this design, the nested rings are used both as a radiation element and a band rejection element. The proposed antenna has a bandwidth of 9.03 GHz, which works efficiently in the range of 2.63 GHz-11.66 GHz with the dual notched bands of Worldwide Interoperability for Microwave Access (WiMAX) at 3.15 GHz-3.66 GHz and wireless local area network (WLAN) at 4.9 GHz-5.9 GHz, respectively. The antenna has a compact size of 20 mm × 30 mm × 1 mm (0.177 × 0.265 × 0.0084 λ0) and is implemented using a flame-retardant type 4 (FR4) material. It has a maximum gain of approximately 4 dB in its operating range, and experimental results support the simulation predictions with high accuracy. The findings of this study imply that the designed antenna can be utilized in UWB applications.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.47 no.11
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• pp.91-96
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• 2010

In this paper, an internal USB dongle antenna with a circular hook-shaped patch is proposed. The proposed antenna comprises of a circular hook-shaped patch and a monopole stub. The proposed antenna with the dimension of $10mm{\times}50mm{\times}0.8mm$ was fabricated on commercial FR-4 substrate with a dielectric constant of 4.6 and tangent loss of 0.025. The designed antenna exhibits three different resonant bandwidths, 2.4 GHz-2.5 GHz, 3.4 GHz-3.6 GHz, and 5.15 GHz-5.825 GHz. The measured radiation patterns are omni-directional at measured frequencies. Therefore, the proposed antenna is suitable for wireless USB dongle antenna that can support multiband wireless services such as WLAN, WiMAX and Bluetooth.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.5
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• pp.568-575
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• 2011

In this paper, we propose a small broadband antenna for mobile device. The proposed antenna consists of a printed rectangular monopole antenna and a parastic element connected to ground using narrow meander line and it is designed on a FR-4 substrate that has a thickness of 0.8 mm and a dielectric constant of 4.4. The FR-4 substrate's size is 50 mm${\times}$90 mm comparable to the real mobile device. The fabricated antenna's size is 12.5 mm${\times}$10.5 mm${\times}$0.8 mm and the measurement shows -10 dB return loss bandwidth of 2,200~6,000 MHz and gains of 2.86~4.01 dBi. Accordingly, the proposed antenna can support mobile device for WiBro(2,300~2,380 MHz), WLAN(IEEE 802.11b/g/n: 2,400~2,480 MHz, IEEE 802.11a: 5,150~5,825 MHz), and mobile WiMAX(IEEE 802.16e : 2,500~2,690 MHz, 3,400~3,600 MHz) service bands.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.6
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• pp.465-470
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• 2020

Heterolayered K(Ta,Nb)O₃/Pb(Zr,Ti)O₃ thin films on Pt/Ti/SiO₂/Si substrates were prepared by a sol-gel process and spin-coating method. The structural and electrical properties were measured to investigate the possibility of application as an electrocaloric effect device. All specimens exhibited dense and uniform cross-sectional structures without pores, and the average thickness of the specimen coated six times was approximately 394 nm. Curie temperatures were observed at 5℃ or less in type-I and 10℃ in type-II specimens, respectively. Type-II specimens coated 6 times showed a relative dielectric constant of 758 and remanent polarization of 9.71 μC/㎠ at room temperature. The maximum electrocaloric effect occurred between 20 and 25℃, slightly higher than their Curie temperature, and the electrocaloric property (ΔT) of the type-II specimens coated 6 times was approximately 1.2℃ at room temperature.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.11
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• pp.695-700
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• 2018

This paper presents the development of compact and lightweight broadband power amplifier module using HMIC (Hybrid Microwave Integrated Circuit) technology that could be high-density integration for many non-packaged microwave components into the small area of a high dielectric constant printed circuit board, such as a ceramic substrate, also using the special design and fabrication schemes for the structure of minimized electromagnetic interference to obtain the homogeneous electrical performance at the wideband frequency. The results confirmed that the small signal gain has a gain flatness of ${\pm}1.5dB$ within the range of 32 to 36 dB. In addition, the output power satisfied more than 30 dBm. The noise figure was measured within 7 dB, and OIP3 (Output Third Order Intercept Point) was more than 39 dBm. The fabricated broadband power amplifier satisfied the target specification required to electrically drive the high power amplifiers of jamming generators for electronic warfare, so the actual applicability to the system was verified. Future studies will be aimed at designing other similar microwave power amplifiers in the future.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.3
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• pp.33-38
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• 2021

Recently, rollable and foldable displays are attracting great attention in the flexible display market due to their excellent form factor. To predict and prevent the mechanical failure of the display panels, it is essential to accurately understand the mechanical properties of brittle SiN_x thin films, which have been used as an insulating film in flexible displays. In this study, tensile properties of the ~130 nm- and ~320 nm-thick SiN_x thin films were successfully measured by coating a ~190 nm-thick organic nano-support-layer (PMMA, PS, P3HT) on the fragile SiN_x thin films and stretching the films as a bilayer state. Young's modulus values of the ~130 nm and ~320 nm SiN_x thin films fabricated through the controlled chamber pressure and deposition power (A: 1250 mTorr, 450 W/B: 1000 mTorr, 600 W/C: 750 mTorr, 700 W) were calculated as A: 76.6±3.5, B: 85.8±4.6, C: 117.4±6.5 GPa and A: 100.1±12.9, B: 117.9±9.7, C: 159.6 GPa, respectively. As a result, Young's modulus of ~320 nm SiN_x thin films fabricated through the same deposition condition increased compared to the ~130 nm SiN_x thin films. The tensile testing method using the organic nano-support-layer was effective in the precise measurement of the mechanical properties of the brittle thin films. The method developed in this study can contribute to the robust design of the rollable and foldable displays by enabling quantitative measurement of mechanical properties of fragile thin films for flexible displays.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.3
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• pp.219-232
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• 2013

This paper presents a microstrip antenna which recovers its resonant frequency and impedance shifted automatically by the approach of other objects such as hands. This can be used for telemetry sensor applications in the ultrahigh frequency(UHF) industrial, scientific, and medical(ISM) band. It is the key element that an frequency-reconfigurable antenna could be electrically controlled. This antenna is miniaturized by loading the folded plates at both radiating edges, and varactor diodes are installed between the radiating edges and the ground plane to control the resonant frequency by adjusting the DC bias asymmetrically. Using this voltage-controlled antenna and the micro controller peripheral circuits of reading the returned level, the antenna is designed and fabricated which recovers its resonant frequency and impedance automatically. Designed frequency auto recovering antenna is conformed to be recovered within a few seconds when the resonant frequency and impedance are shifted by the approach of other objects such as hand, metal plate, dielectric and so on.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.7 s.110
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• pp.648-658
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• 2006

We propose a thin frequency selective surface(FSS) superstrate etched on a substrate for dual-band directivity enhancement, and present a design method of the superstrate. In the proposed new design, two FSS arrays with the same periodicity, but with different alignments are placed above and below a thin dielectric layer to overcome the problem of conventional superstrates for dual band directivity enhancements. Based on the unit-cell simulation, several important parameters that characterize the thin FSS superstrate are investigated, and the procedure for designing such a superstrate is described. We compare the resonant frequencies and the qualify factors of the unit cell with those of three FSS antenna composites with different quality factors, and identify the quality factors which support similar directivity enhancement at the dual-band directivity enhancement. It was found that there is an optimum FSS array size of a superstrate to enhance the directivity most efficiently. Measured results for a fabricated superstrate show a good agreement with the simulated ones.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.493-493
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• 2014

The manufacturing cost of thin-film photovoltics can potentially be lowered by minimizing the amount of a semiconductor material used to fabricate devices. Thin-film solar cells are typically only a few micrometers thick, whereas crystalline silicon (c-Si) wafer solar cells are $180{\sim}300\mu}m$ thick. As such, thin-film layers do not fully absorb incident light and their energy conversion efficiency is lower compared with that of c-Si wafer solar cells. Therefore, effective light trapping is required to realize commercially viable thin-film cells, particularly for indirect-band-gap semiconductors such as c-Si. An emerging method for light trapping in thin film solar cells is the use of metallic nanostructures that support surface plasmons. Plasmon-enhanced light absorption is shown to increase the cell photocurrent in many types of solar cells, specifically, in c-Si thin-film solar cells and in poly-Si thin film solar cell. By proper engineering of these structures, light can be concentrated and coupled into a thin semiconductor layer to increase light absorption. In many cases, silver (Ag) nanoparticles (NP) are formed either on the front surface or on the rear surface on the cells. In case of poly-Si thin film solar cells, Ag NPs are formed on the rear surface of the cells due to longer wavelengths are not perfectly absorbed in the active layer on the first path. In our cells, shorter wavelengths typically 300~500 nm are also not effectively absorbed. For this reason, a new concept of plasmonic nanostructure which is NPs formed both the front - and the rear - surface is worth testing. In this simulation Al NPs were located onto glass because Al has much lower parasitic absorption than other metal NPs. In case of Ag NP, it features parasitic absorption in the optical frequency range. On the other hand, Al NP, which is non-resonant metal NP, is characterized with a higher density of conduction electrons, resulting in highly negative dielectric permittivity. It makes them more suitable for the forward scattering configuration. In addition to this, Ag NP is located on the rear surface of the cell. Ag NPs showed good performance enhancement when they are located on the rear surface of our cells. In this simulation, Al NPs are located on glass and Ag NP is located on the rear Si surface. The structure for the simulation is shown in figure 1. Figure 2 shows FDTD-simulated absorption graphs of the proposed and reference structures. In the simulation, the front of the cell has Al NPs with 70 nm radius and 12.5% coverage; and the rear of the cell has Ag NPs with 157 nm in radius and 41.5% coverage. Such a structure shows better light absorption in 300~550 nm than that of the reference cell without any NPs and the structure with Ag NP on rear only. Therefore, it can be expected that enhanced light absorption of the structure with Al NP on front at 300~550 nm can contribute to the photocurrent enhancement.

• Journal of the Korean Chemical Society
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• v.9 no.4
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• pp.161-168
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• 1965

The effect of solvents on the stabilities of the $C_6H_6{\cdot}I_2$ complex and the $C_6H_6{\cdot}ICl$ complex has been investigated through ultraviolet spectrophotometric measurements. The equilibrium constants obtained at room temperature for the formation of $C_6H_6{\cdot}I_2$ complex are 0.090, 0.216 and 0.328$ lmole^{-1}$ in chloroform, cyclohexane and n-hexane, respectively. The corresponding equilibrium constants at room temperature for $C_6H_6{\cdot}ICl$ complex are 0.125, 0.676 and 0.689 $lmole^{-1}.$ These results indicate that the stabilities of the two complexes increase with decreasing dielectric constants of the solvents used, the increase in stability being more rapid in the $C_6H_6{\cdot}ICl$ complex than in the $C_6H_6{\cdot}I_2$ complex. This may support the conclusion that the dative ionic structures, $C_6H_6^+{\cdots}I_2^-$ and/or ($C_6H_6I)^+{\cdots}Cl^-,$ play important roles on the reasonance stabilization of both the $C_6H_6{\cdot}I_2$ complex and the $C_6H_6{\cdot}ICl$ complex, the roles being more important in the latter complex than in the former complex.