• 한국대기환경학회지
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• 제18권3호
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• pp.173-182
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• 2002

We investigated the effects of operating variables, such as electrical. reactor and gas parameters on toluene removal and discharge property in the dielectric barrier discharge (DBD) process. The toluene removal was initiated with the energy transfer to the reactor by loading of voltages higher than the discharge onset value. The energy transfer and toluene removal increased with the applied voltage. Higher removal rate was observed with smooth surface electrode despite of lower energy transfer compared with the coarse electrode, because more uniform discharge can be obtained on smooth surface state. The decrease of dielectric material thickness enhanced the removal efficiency by increasing the discharge potential. The toluene removal efficiency decreased with the increase of the inlet concentration. The increase of gas retention time enhanced the removal efficiency by the increase of energy density. The oxygen and humidity contents seem to exert significant influences on the toluene removal by dominating the generation of electrons, ions, and radicals which are key factors in the removal mechanism.

• 한국세라믹학회지
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• 제17권2호
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• pp.75-79
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• 1980

The effect of the additive on the dielectric property of $TiO_2$ containing 0-2.5wt %. $Sb_2O_3$ was investigated as a function of frequency from $5{\times}10^4$ to $6.3{\times}10^7$ cps and temperature from 25 to 375$^{\circ}C$. The dielectric constant increased with increasing $Sb_2O_3$ concentration from 0.25 to 0.5wt.% It is due to space charge polarization caused by increasing anion vacanices. The dielectric constant decreased for further increase in $Sb_2O_3$ concentration. It can be explained by increasing grain size effect rather than space charge polarization.

• Bulletin of the Korean Chemical Society
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• 제23권5호
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• pp.741-744
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• 2002

Single phase of multicomponent oxide ZrTiO4 film could be prepared through surface sol-gel route simply by coating the mixture of 100 mM zirconium butoxide and titanium butoxide on $Pt/Ti/SiO_2Si(100)$ substrate, following pyro lysis at $450^{\circ}C$, and annealing it at 770 $^{\circ}C.$ The dielectric constant of the film was reduced as the film thickness decreased due to of the interfacial effects caused by layer/electrode and a few voids inside the multilayer. However, the dielectric property was independent of applied dc bias sweeps voltage (-2 to +2 V).The dielectric constant of bulk film, 31.9, estimated using series-connected capacitor model was independent of film thickness and frequency in the measurement range, but theoretical interfacial thickness, ti, was dependent on the frequency. It reached a saturated ti value, $6.9{\AA}$, at high frequency by extraction of some capacitance component formed at low frequency range. The dielectric constant of bulk ZrTiO4 pellet-shaped material was 33.7 and very stable with frequency promising as good applicable devices.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.276-276
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• 2014

High-performance, fully-transparent, and top-gated oxide thin-film transistor (TFT) was successfully fabricated with Ta2O5 high-k gate dielectric on a glass substrate. Through a self-passivation with the gate dielectric and top electrode, the top-gated oxide TFT was not affected from H2O and O2 causing the electrical instability. Heat-treated InSnO (ITO) was used as the top and source/drain electrode with a low resistance and a transparent property in visible region. A InGaZnO (IGZO) thin-film was used as a active channel with a broad optical bandgap of 3.72 eV and transparent property. In addition, using a X-ray diffraction, amorphous phase of IGZO thin-film was observed until it was heat-treated at 500 oC. The fabricated device was demonstrated that an applied electric field efficiently controlled electron transfer in the IGZO active channel using the Ta2O5 gate dielectric. With the transparent ITO electrodes and IGZO active channel, the fabricated oxide TFT on a glass substrate showed optical transparency and high carrier mobility. These results expected that the top-gated oxide TFT with the high-k gate dielectric accelerates the realization of presence of fully-transparent electronics.

• 한국결정성장학회지
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• 제20권1호
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• pp.25-29
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• 2010

페로브스카이트 구조를 갖고 $Tm_2O_3$가 첨가된 MLCC용 $BaTiO_3$ 유전체를 제조하기 위하여 환원분위기, $1320^{\circ}C$의 온도조건에서 2시간 동안 소결하였다. 유전특성 측정과 미세구조 관찰을 통하여, $Tm_2O_3$ 첨가에 따라 $BaTiO_3$ 세라믹의 유전특성에 미치는 영향에 대해 연구하였으며 각 유전체의 상분석을 통하여 이차상 유무를 확인하였다. 1 mol%의 $Tm_2O_3$를 첨가한 유전체 시편이 유전특성이 가장 우수한 반면에 2 mol% 이상의 $Tm_2O_3$를 첨가한 시편의 유전상수는 1 mol%를 첨가한 시편에 비해 낮은 값을 보였다. 유전특성에 영향을 미치는 grain 크기 및 pyrochlore 이차상 형성은 미세구조분석과 결정구조분석에 의해 조사되었다. 또한, 이들 데이터를 대표적 희토류인 $Er_2O_3$를 첨가한 유전체 시편과 비교하였고 유전특성과 관련이 있는 pyrochlore상의 형성을 상분석으로써 확인하였으며 이 결과는 세라믹 커패시터의 유전특성이 도핑에 따른 이차상과 $BaTiO_3$ tetragonality의 변화와 관련되어있다고 판단된다.

• Journal of the Optical Society of Korea
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• 제18권4호
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• pp.359-364
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• 2014

We report parameters that allow the dielectric functions ${\varepsilon}={\varepsilon}_1+i{\varepsilon}_2$ of $AlAs_xSb_{1-x}$ alloys to be calculated analytically over the entire composition range $0{\leq}x{\leq}1$ in the spectral energy range from 0.74 to 6.0 eV by using the dielectric function parametric model (DFPM). The ${\varepsilon}$ spectra were obtained previously by spectroscopic ellipsometry for x = 0, 0.119, 0.288, 0.681, 0.829, and 1. The ${\varepsilon}$ data are successfully reconstructed and parameterized by six polynomials in excellent agreement with the data. We can determine ${\varepsilon}$ as a continuous function of As composition and energy over the ranges given above, and ${\varepsilon}$ can be converted to complex refractive indices using a simple relationship. We expect these results to be useful for the design of optoelectronic devices and also for in situ monitoring of AlAsSb film growth.

• 한국지하수토양환경학회:학술대회논문집
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• 한국지하수토양환경학회 2003년도 추계학술발표회
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• pp.289-292
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• 2003

Laboratory tests were performed to investigate the dielectric property of saturated sands contaminated by heavy metals solution at low frequency. Differences of contamination and the real part of dielectric constant depend on heavy metal concentration was measured at low frequency, 100KHz below. The optimal frequency to develop the detection potentials of monitoring was 1KHz, 10KHz, 100KHz. At this frequency, Heavy metal contamination of saturated sands contamination can be recommended by analysis of complex dielectric constant.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.864-866
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• 2007

In PDP, bus electrode should have low resistance for high efficiency. The transparent dielectric affects the shape change of bus electrode during the firing. These are related with the electrical property of the electrode. In this study, the shape of electrode was controlled by firing schedules of the transparent dielectric and the bus electrode.

• 한국식품과학회지
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• 제28권3호
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• pp.470-474
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• 1996

The dielectric properties, dielectric constant (${\varepsilon}‘$) and loss factor (${\varepsilon}’$), of skin and pulp of fresh ginseng were measured from $25^{\circ}C$ to $67^{\circ}C$ using an open-ended coaxial probe technique for 915 MHz and 2450 MHz. Pulp and skin had dielectric constant of $30{\sim}64$ and loss factor between 10 and 20, each variable having a respective frequency dependence typical of materials with high water content. Although the loss factor was nearly constant, the dielectric constant increased as moisture content increased. The dielectric constant of ginseng pulp increased as temperature increased (temperature ${\leq}56^{\circ}C$), but any significant differences were not found in skin dielectric properties. Penetration depth for fresh ginseng were about 2 cm at 91.5 MHz and 1cm at 2450 MHz.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.237-238
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• 2006

The electrical properties such as dielectric constants and dielectric losses in the spinel samples of $LiGaTiO_4$, Li(Ga,Eu)$TiO_4$, $Li(Ga.Yb)TiO_4$ have been characterized by varying measuring temperature and frequency. The long range order structures are analyzed by rietveld refinement method. and local atomic disorder structures are analyzed by MEM (maximum entropy method). The relation between the crystal structure and dielectric properties are discussed. $LiGaTiO_4$ spinel has the IMMA with lattice constant, a = 5.86333, b=17.5872. c = 8.28375 ${\AA}$, Li-sites are partially substituted by Ga or Ti. Two crystallographic oxygen sites are partially occupied(40~50%). The dielectric constants of $LiGaTiO_4$, $LiYbTiO_4$, and $LiGa_{2/6}Eu_{1/6}Ti_{1.5}O_4$ ceramics were 127, 75 and 272, respectively at 100 kHz. The dielectric relaxation were observed in the $LiGaTiO_3$ ceramics and the temperature where dielectric loss shows maximum was $390^{\circ}C$ at 1 kHz and increased with increasing the measuring frequency.