• 제목/요약/키워드: dielectric properties

검색결과 3,406건 처리시간 0.03초

New Density-Independent Model for Measurement of Grain Moisture Content using Microwave Techniques

  • Kim, Jong-Heon;Kim, Ki-Bok;Noh, Sang-Ha
    • Journal of Electrical Engineering and information Science
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    • 제2권4호
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    • pp.72-78
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    • 1997
  • A free space transmission method using standard gain horn antennas in the frequency range from 9.0 to 10.5GHz is applied to determine the dielectric properties of grain such as rough rice ,brown rice and barley. The dielectric constant and loss factor, which depend on the moisture content of the wetted grain are obtained from the measured attenuation and phase shift by vector network analyzer. The moisture content of grain varied from 11 to 25% based on this wetted condition. The measured values of dielectric constants as a function of moisture density are compared with values of those obtained using he predicted model for estimating dielectric constants of grain. The effect of density fluctuation, high is an important parameter governing the dielectric properties of grain, on the dielectric constant and loss factor is presented. A new density-independent model in terms of measured attenuation an moisture density is proposed of reducing the effects of density fluctuation on the moisture content measurement.

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Effect of Silica Content on the Dielectric Properties of Epoxy/Crystalline Silica Composites

  • Park, Jae-Jun
    • Transactions on Electrical and Electronic Materials
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    • 제13권6호
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    • pp.322-325
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    • 2012
  • Crystalline silica was synthesized by annealing amorphous silica at $1,300^{\circ}C$ or $1,400^{\circ}C$ for various times, and the crystallinity was estimated by X-ray diffraction (XRD) analysis. In order to prepare a low dielectric material, epoxy/crystalline silica composites were prepared, and the effect of silica content on the dielectric properties was studied under various functions of frequency and ambient temperature. The dielectric constant decreased with increasing crystalline silica content in the epoxy composites, and it also decreased with increasing frequency. At 120 Hz, the value of 5 wt% silica decreased by 0.25 compared to that of 40 wt% silica, and at 23 kHz, the value of 5 wt% silica decreased by 0.23 compared to that of 40 wt% silica. The value increased with increasing ambient temperature.

유전체 혼합 법칙을 이용한 $(Pb_{0.5}Ca_{0.5})(Fe_{0.5}Ta_{0.5})O_3$세라믹스의 마이크로파 유전특성 평가 (Evaluation of Microwave Dielectric Properties in $(Pb_{0.5}Ca_{0.5})(Fe_{0.5}Ta_{0.5})O_3$ Ceramics by the Dielectric Mixing Rule)

  • 박흥수;윤기현;김응수
    • 한국세라믹학회지
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    • 제37권3호
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    • pp.240-246
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    • 2000
  • The microwave dielectric properties of the complex perovskite (Pb0.5Ca0.5)(Fe0.5Ta0.5)O3 ceramics were investigated with the porosity and the dielectric mixing rule. Assuming that the specimens were mixtures of real dielectrics and pores, with 3-0 connectivity, the ionic polarizabilities modified by Maxwell's equation were more close to the theoretical values rather than those modified by Wiener's equation in porous specimens. The theoretical dielectirc loss were obtained with the infrared reflectivity spectra from 50 to 4000cm-1, which were calculated by Kramers-Kronig analysis and classical osciallator model. The relative tendency of dielectric loss calculated from the theoretical value and Maxwell's equation in the specimens with different porosities was in good agreement with the one by the post resonant method.

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금속유기분해 법으로 제조한 ZrTiO4 박막의 미세구조 및 고주파 유전특성 (Microstructure and Microwave Dielectric Properties of ZrTiO4 Thin Films Prepared by Metal-organic Decomposition)

  • 박창순;선호정
    • 한국전기전자재료학회논문지
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    • 제22권1호
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    • pp.53-60
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    • 2009
  • $ZrTiO_4$ dielectric thin films were coated by metal-organic decomposition, and annealed by rapid thermal processing up to $900^{\circ}C$ for their crytallization. Crystallized single-phase $ZrTiO_4$ thin films were fabricated above the annealing temperature of $800^{\circ}C$, but their grains were randomly oriented without specific textured orientation. Best dielectric properties were presented by the sample annealed at $800^{\circ}C$ which had crystalline structure and flat surface. Dielectric constant of the film was maintained at 32 throughout full frequency range up to 6 GHz, and dielectric loss was varied between 0.01 and 0.04.

A-자리 치환에 따른 PZN 세라믹스의 유전특성 (Effect of A-Site Substitution on the Dielectric Properties of PZN Ceramics)

  • 조상희;백종갑;손정호;김정주;김남경
    • 한국세라믹학회지
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    • 제32권5호
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    • pp.635-641
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    • 1995
  • The effects of A-site substitution with alkaline-earth ions (Ca, Sr and Ba) on the perovskite-phase formation and dielectric properties for Pb1-xMx(Zn1/3Nb2/3)O3 (0.0 x 0.5)-based relaxors were studied. Considerable improvements in the sinterability and the extent fo perovskite formation were observed with increasing the A-site substitution (x) and sintering temperature. The maximum dielectric permittivity appeared at x=0.1 for Sr and Ba substitutiion, while the relative dielectric permittivity was almost invariant in the case of Ca ion substitution. Curie temperature decreased with increasing relative amount of Sr and Ba ions but was almost invariant in case of Ca ion substitution. With increasing the amount of x, the diffuseness parameter ($\delta$) increased but the maximum dielectric constant decreased, demonstrating an enhanced diffuse phase transition (DPT) in the presence of alkaline-earth cations.

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$Sb_2O_3$와 ZnO를 첨가한 Barium Titanate의 유전성 (Dielectric Properties of Barium Titanate with $Sb_2O_3$ and ZnO)

  • 윤기현;김종우;송효일
    • 한국세라믹학회지
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    • 제21권2호
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    • pp.121-126
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    • 1984
  • The dielectric properties of $BaTiO_3$ containing 0~0.3mol% and ZnO respectively as additives were investigated as a function of temperature from $25^{\circ}C$ to 14$0^{\circ}C$ and frequency from 24 KHz to 15MHz. The density of sintered $BaTiO_3$ was increased with addition of increasing to 0.15mol% amounts of $Sb_2O_3$ and the dielectric constant was also increased. This is due to space charge polarization with Ba vacancies. Above 0.15mol% $Sb_2O_3$ the density was decreased and the dielectric constant was also decreased due to occuring the discharge through voids. The density of sintered $BaTiO_3$ was decreased with addition of increasing to 0.15mol% amounts of ZnO and the dielectric constant was decreased due to occuring the discharge through voids. Above 0.15mol% ZnO the density was increased and the dielectric constant was also increased.

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Fabrication and Characterization of Dielectric Materials of Front and Back Panel for PDP

  • Chang, Myeong-Soo;Pae, Bom-Jin;Lee, Yoon-Kwan;Ryu, Byung-Gil;Park, Myung-Ho
    • Journal of Information Display
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    • 제2권3호
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    • pp.39-43
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    • 2001
  • The glass compositions of $PbO-SiO_2-B_2O_3$ system and $P_2O_5-PbO-ZnO$ system for the transparent dielectric materials for front panel and $P_2O_5$-ZnO-BaO and $SiO_2-ZnO-B_2O_3$ for the reflective dielectric materials for back panel of PDP (Plasma Display Panel) were investigated. As a result, transparent dielectric materials for front panel showed good dielectric properties, high transparency, and proper thermal expansion matching to soda lime glass substrate. And the reflective dielectric layers for back panel were prepared from two series of parent glass and oxide filler. It was found that these glassceramics are useful materials for dielectric layers in PDP device, as they have similar thermal expansion to soda-lime glass plate, high reflectance, and low sintering temperature. In particular, the addition of $BPO_4$ and $TiO_2$ as fillers to $SiO_2-ZnO-B_2O_3$ system is considered to be the most effective for acquiring good properties of lower dielectric layer for PDP device.

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유전성 glass-ceramics 제조에 관한 연구 (A study on the manufacture of dielectric glass-ceramics)

  • 이종근;박용완;이병하;현동석;이준영
    • 한국세라믹학회지
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    • 제19권4호
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    • pp.281-286
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    • 1982
  • The composition of glasses to be suitable for crystallisation of $BaTiO_3$ by heat-treatment and the dielectric properties of the glass-ceramics were investigated. The composition of the family of glasses was defined by the formula $\chi$ $BaTiO_3 + (100-$\chi$)Al_2O_3$.$2SiO_2$ and excess BaO. Data were presented on dielectric constant and loss tangent at various frequencies. The effects of excess BaO on dielectric properties were investigated. The additions of $Na_2O$ and $Nb_2O_5$ shifted the Curite temperature of these glass-ceramics. The glass composition which was able to be melted at 145$0^{\circ}C$ and moulded as homogeneous glass phase without devitrification should contain $Al_2O_3$.$2SiO_2$ more than 30 mole %. The more the amount of additive BaO increased, the more dielectric constant increased. When the maximum heat-treatment temperature was 105$0^{\circ}C$, we obtained higher dielectric constant than that of 95$0^{\circ}C$. The dielectric constant and the dielectric loss were stable at frequencies between 5$\times$104 and 107 cycle per second. When $Na_2O$ and $Nb_2O_5$ were added, the Curie temperature, presented at 14$0^{\circ}C$ to 15$0^{\circ}C$, shifted to lower temperature. Therefore, the glass-ceramics having high dielectric constant at room temperature were obtained.

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고주파 대역에서 Dielectric Rod Resonator 방법에 의한 저유전 손실 물질의 유전 특성 측정 (The Microwave Measurement of the Dielectric Properties of Low-Loss Materials by the Dielectric Rod Resonator Method)

  • 김근영;심화섭;안철;장익수
    • 대한전자공학회논문지
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    • 제27권10호
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    • pp.10-15
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    • 1990
  • Dielectric rod resonator 방법을 이용하여 고주파 대역에서 낮은 유전 손실을 갖는 유전체의 유전 특성을 측정하는 이론과 실험결과를 보였다. 유전체 시편과 금속 도체판 사이에 존재하는 공기층 효과를 최소화하기 위해 $TE_{011}$ mode 공진 주파수를 이용하였다. 컴퓨터를 사용하여 공진 주파수와 시편 크기, 2-dB 대여폭으로부터 유전 특징을 계산하였다. 측정의 오차 범위는 유전 상수인 경우 ${\pm}3{\%}$ 유전 손실인 경우 ${\pm}12{\%}$ 이내였다.

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변압기유의 전기적인 특성 (II) (Electrical Properties of Transformer Oils (II))

  • 이용우;조돈찬;신만섭;이수원;홍진웅
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1995년도 하계학술대회 논문집 C
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    • pp.1123-1125
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    • 1995
  • In order to investigate the electrical properties for transformer oils, the dielectric properties and volume resistivity were made researches. To measure the characteristics of dielectric liquid, volume resistivity and dielectric loss, coaxial cylindrical liquid electrode was used, geometric capacitance was confirmed to 16[pF]. Highmegohm meter of VMG-1000 was used for measuring volume resistivity, the appling voltages were DC 100, 250, 500[V] in the temperature range of $20{\sim}100[^{\circ}C]$. Experiments for measuring the dielectric loss were performed at $20{\sim}120[^{\circ}C]$ in temperature range, $30{\sim}1.5{\times}10^5$[Hz] in frequency range and $300{\sim}1500$[mV] in voltage range and then, the result of experiment for the movement of carrier and the physical constants to contribute dielectric properties is introduced.

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