• 한국응용과학기술학회지
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• 제34권1호
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• pp.25-32
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• 2017

주파수 (30 ~ 300k Hz)와 온도 범위 ($20{\sim}160^{\circ}C$)가 경화 조건에 따른 에폭시 수지의 전기적 특성 (유전율 및 유전손실)에 미치는 영향을 조사하였다. 유리전이온도(Tg) 이하에서는 주파수와 상관없이 각각 3가지의 시편에서 유전분산 현상이 나타나지 않으며, 유리전이온도(Tg) 이상에서 유전분산 현상이 나타났다.

• 한국세라믹학회지
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• 제31권8호
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• pp.829-834
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• 1994

The aim of this study is to investigate the changes in dielectric properties, Young's modulus and remnant compressive strength with compressive cyclic loading in PZT of tetragonal, MPB and rhombohedral composition. Higher relative dielectric constants appeared in the poled condition than the unpoled condition for all the compositions. After poling treatment remarkably higher relative dielectric constants were observed particularly in MPB, tetragonal compositions. Until five percent of the expected fatigue life was exhausted, the dielectric constant increased with compressive cyclic stress in MPB and rhombohedral while it remained nearly constant in tetragonal. During the subsequent compressive cyclic stress, dielectric constant decreased in all the three compositions. As the compressive cyclic stress is applied the change of Young's modulus was coincided with the change of remnant compressive strength.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 춘계학술대회 논문집
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• pp.309-313
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• 1997

(Ba$_{x}$Sr$_{l-x}$)TiO$_3$(BST) thin fi1ms with various Ba/Sr ratios were deposited on Pt(80nm)/SiO$_2$(100nm)/Si by RF magnetron sputtering. BST thin films which have x=0.6, 0.5, 0.4 were studied dielectric properties with temperature variation. The frequency was used from 100Hz to 1MHz for measuring dielectric constant. The measurement conditions of dielectric constant with Temperature Variation were 1KHz and 2$0^{\circ}C$. As a result, the dielectric constant of BST thin film was about 425 and loss factor was 0.013. Also, with increasing Temperature, the dielectric constants of BST thin films were gradually decreased.sed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.566-569
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• 2002

The $(Sr_{0.9}Ca_{0.1})TiO_3$(SCT) thin films are deposited on Pt-coated electrode (Pt/TiN/$SiO_2$/Si) using RF sputtering method. The maximum dielectric constant of SCT thin film is obtained by annealing at $600[^{\circ}C]$. The temperature properties of the dielectric loss have a value within 0.02 in temperature ranges of $-80{\sim}+90[^{\circ}C]$. The capacitance characteristics had a stable value within ${\pm}4[%]$. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films is observed above 200[kHz].

• 반도체디스플레이기술학회지
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• 제4권1호
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• pp.55-59
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• 2005

The ($Sr_{1-x}Ca_{x})Ti_{3}$(SCT) thin film are deposited on Pt-coated electrode (Pt/TiN/$SiO_{2}$/Si) using RF sputtering method. The maximum dielectric constant of SCT thin film is obtained by annealing at 600[$^{\circ}C$]. The temperature properties of the dielectric loss have a value within 0.02 in temperature lunges of -80 $\∼$ +90[$^{\circ}C$]). The capacitance characteristics had a stable value within ${\pm}4\%$. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films is observed above 200[kHz).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1989년도 춘계학술대회 논문집
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• pp.63-65
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• 1989

Piezoelectric BaTiO$_3$-polymer composite were investigated for dielectric and piezoelectric properties with the barium titanate active particle size. Under the condition of the same density and ceramic volume ratio of composite, the dielectric and piezoelectric constant of composite are increasing as the ceramic particle size in composite are increasing. The surface layer model was quoted to explain these phenomena in our system and experimentally confirmed. The connectivity parameter of modified cube model of composite was calculated from the dielectric constant variation as their particle size. The connectivity parameter X and Y were 77.8% and 98.9% respectively. It means that the barium titanate particle distribution in composite nearly approach to the parallel mode. It was experimentally confirmed that the surface layer has low dielectric and nonferroelectric properties. Dielectric constant and thickness of surface layer were calculated from the equivalent circuit of composite.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1989년도 춘계학술대회 논문집
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• pp.105-106
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• 1989

The effects of pyrochlore phase and micostructure on the dielectric properties. such as dielectric constant, dissipation factor, diffusensess coefficient and dielectric hysteresis characteristics, of Lead magnesium niobate(PMN) ceramics have been studied as a function of the amount of excess MgO. The pyrochlore phase in PMN was completely eliminated with the addition of 5 m/o excess MgO. Also, the dielectric constant and remanent polarization increased with increase in grain size, density and then decreased with grain growth inhibitation for further addition of excess MgO. The diffuseness coefficient showed a tendency nearly reverse to that for the dielectric constant and remanent polarization change.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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• pp.153-156
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• 2004

The $Pb(Zr_{0.4}Ti_{0.6})O_3/Pb(Zr_{0.6}Ti_{0.4})O_3$ [PZT(4060)/(6040)] heterolayered thin films were deposited by RF sputtering method on the $Pt/TiO_2/SiO_2/Si$ substrate. The effects of the structural and dielectric properties of PZT heterolayered thin films were investigated. The MFM(Metal Ferroelectric Metal) type capacitors were made using the PZT(6040)/(4060) heterolayered thin films deposited with optimum deposition condition. An enhanced dielectric property was observed in the PZT(4060)/(6040) thin films. Investigating the dielectric constant and dielectric loss characteristics. the application for the next-generation dielectric thin films and memory devices were studied.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 추계학술대회 논문집 전기물성,응용부문
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• pp.51-53
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• 2005

This study was to measure the minuteness structure, dielectric properties of 0.03PCW-0.07PNN-0.9PZT ceramics according to sintering temperature manufacture the specimens with a general method. The results of this study were gotten such as follows. The crystal structure of ceramic changed the rombohedral structure into teteragonal structure according to rising sintering temperature in XRD. Dielectric constant at $20^{\circ}C$ showed its maximum value 510.599 in specimens sintered at $1100^{\circ}C$ and dielectric loss showed its minimum value 7.43% in specimens sintered at $1100^{\circ}C$. The variation rate of dielectric constant according to the change of frequency showed its minimum value 0.029/kHz at $1100^{\circ}C$. The variation rate of dielectric constant according to the change of temperature showed its minimum value $1.40/^{\circ}C$ at $1500^{\circ}C$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 추계학술대회 논문집 학회본부 C
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• pp.845-847
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• 1999

(Ba, Sr)$TiO_3$[BST] thin films were fabricated on Pt/$TiO_2/SiO_2$/Si substrate by RF sputtering. The structural and dielectric properties of the BST thin films were investigated with the deposition time. Increasing the deposition time from 20 min. to 60 min., second phases were decreased, and EST (111), (100), (200) peaks were increased. The relative dielectric constant and dielectric loss of the EST thin films with the thickness of 3000$\AA$ were 300 and 0.018, respectively at 1[kHz]. The relative dielectric constants was decreased and dielectric losses was increased as increasing the frequency.