• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.58-61
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• 2001

Metal-insulator-semiconductor (MIS) C-V properties with high dielectric AIN thin films showed no hysteresis and good interface properties. The dielectric constant of the AIN film calculated from the capacitance at the accumulation region in the capacitance-voltage(C-V) characteristics was about 8. The C-V characteristics of MFIS capacitor showed a hysteresis loop due to the ferroelectric nature of the LiNbO$_3$ thin films. Typical dielectric constant value of LiNbO$_3$ film of MFIS device was about 23. The memory window width was about 1.2V at the gate voltage of $\pm$5 V ranges. Typical gate leakage current density of the MFIS structure was the order of 10$^{-9}$ A/cm$^2$ at the range of within $\pm$500 kV/cm. The ferroelectric capacitors showed no polarization degradation up to about 10$^{11}$ switching cycles when subjected to symmetric bipolar voltage pulse(peak-to-peak 8V, 50% duty cycle) in the 500kHz.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.5
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• pp.356-361
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• 2001

The structureal, dielectric and piezoelectric properties of Pb[(Sb$\_$1/2/Nb$\_$1/2/)$\_$x/-(Ni$\_$1/3/Nb$\_$2/3/)$\_$0.15-x/-(Zr$\_$y/Ti$\_$1-y/)$\_$0.85/]O$_3$(x=0∼0.05, y=0.47∼0.52) ceramics were investigated with the substitution of Pb(Sb$\_$1/2/Nb$\_$1/2/)O$_3$(abbreviated PSN) and the Zr/Ti ratio. At Zr/Ti ratio of 50/50, tetragonality was decreased and grain size abruptly decreased with the increase of PSN substitution. Curie temperature was decreased and dielectric constant increased with the substitution of PSN. The coercive field increased and remnant polarization decreased with the substitution of PSN. Electromechanical coupling factor(k$\_$p/) showed the highest value of 0.622 at 1mol% PSN, but mechanical quality factor(Q$\_$m/) showed the minimum value at that composition. Dielectric constant and electromechanical coupling factor with the Zr/Ti ratio showed maximum values at Zr/Ti ratio of 50/50 and mechanical quality factor showed minimum values near the Zr/Ti ratio of 50/50.

• Electrical & Electronic Materials
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• v.10 no.10
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• pp.983-988
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• 1997

We investigated the structural and dielectric properties of PZT(20/80)/PZT(80/20) heterolayered thin films that fabricated by the alkoxide-based Sol-Gel method. PZT(20/80)/PZT(80/20) heterolayered thin films were spin-coated on the Pt/Ti/SiO$_2$/Si substrate with PZT(20/80) film of tetragonal structure and PZT(80/20) film of rhombohedral structure by turns. Each layers were dried to remove the organic materials at 30$0^{\circ}C$ for 30min and sintered at $650^{\circ}C$ for 1hr. This procedure was repeated several times to form PZT(20/80)/PZT(80/20) heterolayered films and thickness of the film obtained by one-times of drying/sintering process was approximately 80-90nm. PZt-1, 3, 5 films with top layer of PZT(20/80) film of tetragonal structure showed fine grain structure and PZT-2, 4, 6 films with top layer of PZT(80/20) film of rhombohedral structure showed the dense grain microstructure without rosette-type. Dielectric constant and dielectric loss of the PZT-6 film were approximaterly 1385 and 3.3% respectively. Increasing the number of coatings remanent polarization was increased and coercive field was decreased and the values of the PZT-6 film were 8.13$\mu$C/cm$^2$and 12.5kV/cm respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.665-668
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• 1999

Thin films of Pb(Zr,Ti)O$_3$ were fabricated by means of the sol-gel spin-coating method and the multi-coating of eight coating numbers. The thin films were dried on the temperature range of 250 ~ 400($^{\circ}C$), whenever the specimens were dried after each coating Processing. The fabricated ferroelectric thin films of lead zirconate titanate(PZT) were treated with the rapid thermal annealing(RTA) at 650($^{\circ}C$),or 3(min), and direct insertion thermal annealing(DITA) at 650($^{\circ}C$), for 30(min). The measured properties of dielectric thin films were following: The good results of dielectric properties were shown by the RTA specimen. The saturation polarization(Ps), remanent polarization(Pr), coercive field (Ec), dielectric constant and dielectric loss factor of the RTA specimen were estimated to be about 27.1[ $\mu$ C/$\textrm{cm}^2$], 13.7[ $\mu$ C/$\textrm{cm}^2$], 55.6(kV/cm), 786 and 6.4(%) respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.255-258
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• 2000

In this study, the structural, dielectric and piezoelectric properties of Pb[(Sb$\sub$1/2/Nb$\sub$1/2/)$\sub$x/- (Ni$\sub$1/3/Nb$\sub$2/3/)$\sub$0.15-x/- (Zr,Ti)$\sub$0.85/]O$_3$(x = 0, 0.01, 0.02, 0.03, 0.04, 0.05) ceramics is investigated as a function of Pb(Sb$\sub$1/2/Nb$\sub$1/2/)O$_3$ (abbreviated PSN) substitution. With the increase of PSN substitution, the crystal structure is transO$_3$formed from the tetragonal phase to the rhombohedral phase and the grain size is decreased abruptly. The curie temperature is decreased with the PSN substitution. The dielectric constant is increased with the PSN substitution and maximum value of 2290 is obtained at 4mol% PSN. With the PSN substitution, the coercive field is increased and the remnant polarization is decreased. The Electromechanical coupling factor(k$\sub$p/) Is showed the highest value of 0.622 at lmol% PSN and the mechanical quality factor(Q$\sub$m/) is decreased abruptly with the PSN substitution.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.329-331
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• 2003

In this paper, $0.10Pb(Sb_{1/2}Sn_{1/2})O_3-0.25PbTiO_3-0.65PbZrO_3$ ceramics were fabricated by the mixed-oxide method. The sintering temperature and time were $1230^{\circ}C$ and 2(hr), respectively. The structural, dielectric and pyroelectric properties with addition of $Y_2O_3$ were studied. The crystal structure of a specimen was rhombohedral. As a result of SEM, the average grain size were decreased with increasing the contents of $Y_2O_3$. Relative dielectric constant and dielectric loss of the specimen doped with 0.2wt% $Y_2O_3$ were 597 and 0.022, respectively. Remanent polarization and coercive field of the specimen doped with 0.4wt% $Y_2O_3$ were $8.5[{\mu}C/cm^2]$ and 10.2[kV/cm], respectively.

• Journal of the Korean Ceramic Society
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• v.36 no.12
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• pp.1374-1380
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• 1999

The cause of Scond Harmonic Generation (SHG) in thermally poled silica glass is suggested basedon the electrical and dielectric relaxation measurements. The absorption currents as functions of time were measured for various types of silica glasses and analyzed by the theory of Space Charge Polarization. Space charge polarization occurs when an ionic conducting material is subjected to dc electric field with blocking electrode. Thermal poling performed to induce SHG in silica glass is basically identical to the process generating space charge polarization. Hence it was found that gene-ration removal reproduction and temperature dependence of SHG in poled silica is directly related to those of space charge polarization. It turned out that the fundamental parameters governing the SHG in poled silica are charge carrier concentration and mobility. Based on the theory of space charge polarization and experimental results of electrical rela-xation the method to increase the intensity of SHG is proposed.

• Korean Journal of Optics and Photonics
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• v.33 no.1
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• pp.22-27
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• 2022

We fabricate a polarization-independent dielectric multilayer thin-film diffraction grating for a spectral-beam-combining (SBC) system with a simple grating structure and low aspect ratio. Due to the refractive index and thickness error of the manufactured thin films, the diffraction efficiency of the fabricated diffraction grating was lower than that of the design. The causes of the errors were analyzed, and it was confirmed through simulation that diffraction efficiency could be compensated through an additional coating on the manufactured diffraction grating. As a result of sputtering an additional Ta₂O₅ layer on a fabricated diffraction grating, the diffraction efficiency was corrected and a maximum 91.7% of polarization-independent diffraction efficiency was obtained.

• Elastomers and Composites
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• v.56 no.2
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• pp.57-64
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• 2021

This paper reviews recent developments and applications of dielectric elastomers (DEs) and suggests various techniques to improve DE properties. DEs as smart materials are a variety of electro-active polymers (EAPs) that convert electrical energy into mechanical energy and cause a large deformation when a voltage is applied. The dielectric constant, modulus, and dielectric loss of DEs determine the efficiency of deformation. Among these, the dielectric constant significantly affects their performance. Therefore, various recent approaches to improve the dielectric constant are reviewed, including the enhancement of polarization, introduction of microporous structures in the matrix, and introduction of ferroelectric fillers. Furthermore, the basic principles of DEs are examined, as well as their various applications such as actuators, generators, sensors, and artificial muscles.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1617-1619
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• 2000

In this study the nonlinear dielectric properties of amorphous copolymers were analyzed by the related nonlinear dielectric theory. The theory is related to the cooperated dipoles and the number of the dipoles. The relation between the polarization coefficient $R_p$ and the nonlinear coefficient $R_s$ was deduced under the assumption of isotropic media.