• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.1
• /
• pp.29-34
• /
• 2009

PLZT thin films were deposited on platinized silicon (Pt/$TiSiO_2$/Si) substrate by RF magnetron sputtering. A $TiO_2$ buffer layer was fabricated, prior to deposition of PLZT films. the layer was strongly affected the crystallographic orientation of the PLZT films. X-ray diffraction was performed on the films to study the crystallization of the films as various substrate temperatures (Ts). According to increasing Ts, preferred orientation of films was changed (110) plane to (111) plane. The ferroelectric, dielectric and electrical properties of the films were also investigated in detail as increased substrate temperatures. The PLZT films deposited at $400^{\circ}C$ showed good ferroelectric properties with the remnant polarization of $15.8{\mu}C/cm^2$ and leakage current of $5.4{\times}10^{-9}\;A/cm^2$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.16 no.3
• /
• pp.207-213
• /
• 2003

The Sr$\_$0.7/Bi$\_$2.6/Ta$_2$O$\_$9/(SBT) thin films are deposited on Pt-coated electrode(Pt/TiO$_2$/SiO$_2$/Si) using RF magnetron sputtering method. The structural and electrical properties of SBT capacitors were influenced with annealing atmosphere. In the XRD pattern, the SBT thin films in all annealed atmosphere had (105) orientation. In the SEM images, Bi-layered perovskite phase was crystallized in all annealing atmosphere and grain largely grew in oxygen annealing atmosphere. The maximum remnant polarization and the coercive electric field in oxygen annealing atmosphere are 12.40[${\mu}$C/cm$^2$] and 30[kV/cm] respectively. The dielectric constant and leakage current density of capacitors annealed oxygen atmosphere are 340 and 2.13${\times}$10$\^$-9/ [A/cm$^2$] respectively. The fatigue characteristics of SBT capacitors did not change up to 10$\^$10/ switching cycles.

• Proceedings of the KIEE Conference
• /
• 2000.07c
• /
• pp.1862-1864
• /
• 2000

Recently diagnostic techniques have been investigated to detect a partial discharge(PD) associated with a dielectric material defect in a high-voltage electrical apparatus. Among the PD measuring method, detecting electromagnetic wave generated by PD is one of the most effective method because PD radiates wide frequency of electromagnetic wave up to UHF. From the above points of view, we have investigated the polarization and distance characteristics of electromagnetic wave radiated by an insertion of solid insulators between needle-plane electrodes in the air. According to the magnitude of applied voltage, the frequency spectrum of radiated electromagnetic waves were increased about under 100(MHz), compared with background noise. The electromagnetic wave magnitude is attenuated about 4$\sim$7.6[dB] at the point 3[m] away from PD.

• Electrical & Electronic Materials
• /
• v.10 no.6
• /
• pp.541-547
• /
• 1997

(Pb$_{1-x}$ La$_{x}$)Ti$_{1-x}$ $_4$O$_3$(x=0, 0.02, 0.04, 0.08) ceramic thin films were fabricated by Sol-Gel method. A stock solution of (Pb, La)TiO$_3$ with excess Pb 10 mol% was made and spin-coated on the Pt/Ti/SiO$_2$/Si substrate at 400rpm for 30 seconds. Coated specimens were dried on the hot-plate at 35$0^{\circ}C$ for 10 min and sintered at 500~75$0^{\circ}C$ for 1 hour. The dielectric constant, remanent polarization and coercive field of the PLT(6at.%) thin films sintered at $650^{\circ}C$ were 884, 13.95$\mu$C/$\textrm{cm}^2$ and 8.7kV/cm, respectively. Pyroelectric coefficient, figure of merit of pyroelectric current, voltage responsivity and detectivity of PLT(6at.%) thin films were 3.2$\times$10$^{-8}$ C/$\textrm{cm}^2$K, 1.02$\times$10$^{-8}$ C.cm/J, 2.9 $\times$10$^{-11}$ C.cm/J, 0.29$\times$10$^{-8}$ C.cm/J, respectively.ely.

• Journal of the Korean institute of surface engineering
• /
• v.36 no.1
• /
• pp.74-78
• /
• 2003

The corrosion failure of electronic devices has been a major reliability concern lately. This failure is an ongoing concern because of miniaturization of integrated circuits (IC) and the increased use of polymers in electronic packaging. Recently, plasma-polymerized cyclohexane films were considered as a possible candidate for a interlayer dielectric for multilever metallization of ultra large scale integrated (ULSI) semiconductor devices. In this paper the protective ability of above films as a function of deposition temperature and RF power in an 3.5 wt.% NaCl solution were examined by polarization measurement. The film was characterized by FTIR spectroscopy and contact angle measurement. The protective efficiency of the film increased with increasing deposition temperature and RF power, which induced the higher degree of cross-linking and hydrophobicity of the films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.05c
• /
• pp.200-203
• /
• 2003

Ferroelectric europium-substitution $Bi_4Ti_3O_{12}$ thin films were fabricated by spin-coating onto a Pt/Ti/$SiO_2$/Si substrate. The $Bi_{3.25}Eu_{0.75}Ti_3O_{12}$ (BET) films have polycrystalline structure annealed at 700 C. We investigated that the influence of $Bi_4Ti_3O_{12}$ thin films by substituting for Bi ions with Bi ions using X-ray diffraction (XRD), scanning electron microscopy (SEM), and X-ray photoelectron spectroscopy (XPS). From the XPS measurement, it was suggested that the stability of the metal-oxygen octahedral should be related to substitute for Bi ions with Eu ions at annealed $800^{\circ}C$. The BET thin films showed a large remanent polarization (2Pr) of $60.99C/cm^2$ at an applied voltage of 10 V. The BET thin films exhibited no significant degradation of switching charge at least up to $5{\times}10^9$ switching cycles at a frequency of 50 kHz.

• Proceedings of the KIEE Conference
• /
• 2003.07c
• /
• pp.1499-1501
• /
• 2003

The A $Sr_{0.7}Bi_{2.6}Ta_2O_9$(SBT)thin films are deposited on Pt-coated electrode(Pt/$TiO_2/SiO_2$/Si) using RF magnetron sputtering method. The electrical properties of SBT capacitors with top electrodes were studied. In the XRD pattern, the SBT thin films in all annealing temperatures had (105) orientation. In the SEM images, Bi-layered perovskite phase was crystallized at $750^{\circ}C$ and grains largely grew in oxygen annealing atmosphere. The electrical properties of SBT capacitor with top electrodes represents a favorable properties in Pt electrode. The maxim urn remanent polarization and the coercive electric field with Pt electrode are $12.40C/cm^2$and 30kV/cm respectively. The dielectric constant and leakage current density with Pt electrode is 340 and $6.8110^{-10}A/cm^2$ respectively.

• Journal of Sensor Science and Technology
• /
• v.19 no.3
• /
• pp.202-208
• /
• 2010

This study examined the dependency of crystalline orientation and electric properties of sol-gel PZT film on hydrolysis, a $PbTiO_3$ seed layer and a concentration of sol-gel solution. The PZT thin films were prepared by using 2-Methoxyethanol-based sol-gel method and spin-coating on Pt/Ti/$SiO_2$/Si substrates. The 1-${\mu}m$-thick PZT films were coated and then fired in a furnace by direct insert method. The highly (111) oriented PZT film of pure perovskite structure could be obtained. We could control the degree of orientation by various parameters such as hydrolysis, a $PbTiO_3$ seed layer and a concentration of sol-gel solution. The highest measured remanent polarization, dielectric constant and piezoelectric coefficient are $24.16\;{\mu}C/cm^2$, 2808, and 159 pC/N, respectively.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
• /
• v.1 no.2
• /
• pp.27-32
• /
• 2008

A current research basically diverted towards an increase in the operational output with the minimization of the materials used, which ultimately scaled down the dimensions of ceramic electronic components. In this direction the nano-technology pave the revolutionary changes in particular the electronic industries. The applications of nano-sized particles or nano-sized materials are hence, playing a significant role for various purposes. The PZT(lead, zirconium, titanium) based ceramics which, are reported to be ferroelectric materials have their important applications in the areas of surface acoustic waves (SAW), filters, infrared detectors, actuators, ferroelectric random access memory, speakers, electronic switches etc. Moreover, these PZT materials possess the large electro mechanical coupling factor, large spontaneous polarization, low dielectric loss and low internal stress etc. Hence, keeping in view the unique properties of PZT piezoelectric ceramics we also tried to synthesize indigenously the small sized PZT ceramic powder in the laboratory by using the modified sol-gel approach. In this paper, propyl alcohol based sol-gel method was used for preparation of PZT piezoelectric ceramic. The powder obtained by this sol-gel process was calcined and sintering to reach a pyrochlore-free crystal phase. The characterization of synthesized material was carried out by the XRD analysis and the surface morphology was determined by high resolution scanning electron microscopy.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.67 no.6
• /
• pp.799-803
• /
• 2018

We demonstrated memory thin-film transistors (MTFTs) with organic ferroelectric polymer poly(vinylidene fluoride-co-trifluoroethylene) and an amorphous oxide semiconducting indium gallium zinc oxide channel on the elastomeric substrate. The dielectric constant for the P(VDF-TrFE) thin film prepared on the elastomeric substrate was calculated to be 10 at a high frequency of 1 MHz. The voltage-dependent capacitance variations showed typical butterfly-shaped hysteresis behaviors owing to the polarization reversal in the film. The carrier mobility and memory on/off ratio of the MTFTs showed $15cm^2V^{-1}s^{-1}$ and $10^6$, respectively. This result indicates that the P(VDF-TrFE) film prepared on the elastomeric substrate exhibits ferroelectric natures. The fabricated MTFTs exhibited sufficiently encouraging device characteristics even on the elastomeric substrate to realize mechanically stretchable nonvolatile memory devices.