• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 하계학술대회 논문집 C
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• pp.1289-1291
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• 1994

Dielectric properties of $C_{22}$-Quinolium(TCNQ) Langmuir-Blodgett (LB) films were studied as a function of frequency(10Hz-13MHz) and annealing temperature($20{\sim}240^{\circ}C$). A complex dielectric constant ${\epsilon}^*={\epsilon}'-i{\epsilon}"$, in general, shows the frequency dependence of orientational polarization in the measured frequency range. A dielectric permittivity ${\epsilon}'$ at 10Hz is around 8.2 and decreases very slowly as the frequency increases up to 1 MHz, and then suddenly drops above this frequency, while a dielectric loss factor ${\epsilon}"$ reaches a maximum near 1 MHz. Its annealing temperature dependence at 10Hz shows that ${\epsilon}'$ and ${\epsilon}"$ increase as the temperature increases upto $180^{\circ}C$, even though there is a little drop near $120{\sim}160^{\circ}C$. Both ${\epsilon}'$ and ${\epsilon}"$ drop quickly above $180^{\circ}C$. which may be thought of a destruction of the LB films. Another fact of the annealing temperature dependence of the dielectric constant is an occurrence of the new dielectric dispersion below 100Hz. This low frequency dispersion is getting clear above $80^{\circ}C$.

• 한국세라믹학회지
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• 제38권11호
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• pp.1042-1045
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• 2001

Ba(Zn$_{1}$3/Nb$_{2}$3/) $O_3$-Sr(Zn$_{1}$3/Nb$_{2}$3/) $O_3$계에 대하여 소결 온도 변화와 Zr $O_2$첨가량에 따른 마이크로파 유전특성을 조사하였다. 동일 조성에서 소결 온도가 증가함에 따라 밀도가 향상되고 공진 주파수의 온도계수($ au$$_{f}$)는 감소하는 경향을 보였으나, 유전상수(K)와 품질계수(Q$\times$f)는 커다란 변화가 없었다. 또한 Zr $O_2$첨가량이 증가함에 따라 소결 시편의 밀도가 향상되었고 더불어 유전상수, 품질계수가 증가하는 경향을 보였으며, 공진 주파수의 온도계수가 감소하는 우수한 특성이 나타났다. 특히, 소결온도 1575$^{\circ}C$, 0.6 wt% Zr $O_2$를 첨가했을 때 유전상수가 최대($\varepsilon$$_{r}$=41)로 나타났으며, 공진 주파수의 온도계수는 1.0wt% Zr $O_2$를 첨가했을 때 최소($\tau$$_{f}$=+0.8ppm/$^{\circ}C$)로서 양호한 값을 얻을 수 있었다.었다.

• 한국전기전자재료학회논문지
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• 제16권9호
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• pp.795-800
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• 2003

The dielectric and piezoelectric properties of the xPb(A $l_{0.5}$N $b_{0.5}$) $O_3$-(1-x)Pb(Z $r_{0.52}$ $Ti_{0.48}$) $O_3$ [xPAN-(1-x)PZT] thin films by pulsed laser deposition (PLD) were investigated as a function of PAN contents. The effect of texture on dielectric and piezoelectric properties of the 0.05PAN-0.95PZT thin films having the highest piezoelectric constant( $d_{33}$) was studied more precisely. For 0$\leq$x$\leq$0.15 compositions in xPAN-(1-x)PZT thin films, the well-developed perovskite phase with (111) preferred orientation was obtained at the deposition temperature of 50$0^{\circ}C$. With increasing PAN content, remanent polarization and coercive field decreased. The dielectric constant increased with an increase of PAN content until it reached 1450 at $\chi$= 0.05, and then decreased for higher PAN content. The maximum points of dielectric constant coincides with the maximum points of the piezoelectric constant $d_{33}$.33/.33/././.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.284-284
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• 2007

In this study, the microwave dielectric property variations of (1-x)$BiNbO_4-(x)ZnNb_2O_6$ composites (x=0.3, 0.5 and 0.7) with 10wt% zinc borosilicate(ZBS) glass was investigated as a function of the substitution of $ZnNb_2O_6$ with a view to applying thes system to LTCC technology. The all composition addition of 10wt% ZBS glass ensured a successful sintering below $900^{\circ}C$. In addition, a small amount of $Bi_2SiO_5$ as the secondary phase was observed in the all composition. The substitution of $ZnNb_2O_6$ on the $BiNbO_4$ composites increased the $Q{\times}f$ values, but it decreased the sinterability and dielectric constant due to the high sintering temperature and low dielectric constant of $ZnNb_2O_6\;than\;BiNbO_4$ ceramics. The increasing of $ZnNb_2O_6$ content from 0.3 to 0.7 in the (1-x)$BiNbO_4-(x)ZnNb_2O_6$ composites with 10wt% ZBS glass sintered at $900^{\circ}C$ demonstrated 28.1~15.6 in the dielectric constant$({\varepsilon}_r)$, 5,500~8,700GHz in the $Q{\times}f$ value.

• 한국전기전자재료학회논문지
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• 제20권7호
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• pp.581-586
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• 2007

[ $(Ba_{0.57}Sr_{0.33}Ca_{0.10})TiO_3$ ] (BSCT) powders, prepared by sol-gel method, were mixed with organic vehicle and the BSCT thick films were fabricated by the screen printing method. The structural and dielectric properties were investigated as a function of the $Yb_2O_3$ doping contents. As a result of the TG-DTA, exothermic peak was observed at around $670^{\circ}C$ due to the formation of the polycrystalline perovskite phase. All BSCT thick films showed the typical XRD patterns of a cubic polycrystalline structure. The average thickness of all BSCT thick films was about $70{\mu}m$. The grain size of the BSCT thick film doped with 0.7 mol% $Yb_2O_3$ was approximately $6.2{\mu}m$. The Curie temperature and relative dielectric constant at room temperature decreased with increasing $Yb_2O_3$ amount. Relative dielectric constant and dielectric loss of the specimen doped with 0.1 mol% $Yb_2O_3$ were 4637 and 19 % at Curie temperature, respectively.

• 전자공학회논문지A
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• 제30A권12호
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• pp.36-42
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• 1993

By the variational method, the coplanar waveguide(C.P.W) shielded by two conducting plates has been analyzed. The particular potential solution has been obtained for the boundary conditions in C.P.W. The characteristic impedance and the effective dielectric constant in C.P.W. have been obtained by the variational method using the potential function and the assumed basis function for charge distributions. To consider the effect of the conducting plate in C.P.W. two cases, with and without the top plate, have been analyzed and compared respectively.

• 한국안광학회지
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• 제5권1호
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• pp.49-53
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• 2000

Sodium borate silicate 유리는 $10Na_2O-39B_2O_3-50SiO_2-CoO$ mol%와 $20Na_2O-14B_2O_3-65SiO_2-CoO$ mol%의 조성비로 혼합한 후 전기로에서 $1210^{\circ}C$ 온도로 2시간 동안 용융하여 공기 중에서 급냉 시켜 제작하였다. 급냉한 유리의 유전적 거동을 조사하기 위하여 온도와 주파수 함수로 유전상수와 비저항을 측정하였다. 유전율 스펙트럼에서 유리전이온도는 $Na_2O$ 20 mol%시료가 낮아졌으며 $Na_2O$ 함량이 증가함에 따라 유전상수는 크게 나타났다. 유리의 비저항 주파수 의존성은 non-Debye형 완화를 보였다.

• 한국세라믹학회지
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• 제40권12호
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• pp.1183-1188
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• 2003

LCP(Liquid Crystal Polymer)와 BT(BaTiO$_3$) 복합체를 LCP varnish와 BT 슬러리를 혼합하여 제조하고, BT 슬러리 내에서 BT 입자의 분산 특성과 LCP-BT 복합체의 조성 및 BT 분말 크기가 유전 특성에 미치는 영향에 대하여 연구하였다. 분말 크기가 다른 BT 분말에 대하여 분산제 GLYMO(3-glycidyloxypropyltrimethoxysilane) 첨가량에 따른 용매 ODBZ(o-dichlorobenzene) 내에서의 분산 특성을 측정한 결과, BT분말 크기가 증가할수록 비표면적의 감소로 인하여 소요되는 최적 분산제의 양이 감소하였다. 분산된 BT슬러리를 LCP와 혼합하고 테잎 케스팅법을 이용하여 LCP-BT복합체를 제조하였다. BT 입자의 크기가 100nm에서 500nm로 증가함에 따라 복합체의 유전 상수는 34.3에서 44.1로, 유전 손실은 0.05 에서 0.063으로 증가하였다.

• 한국재료학회지
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• 제17권8호
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• pp.442-446
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• 2007

Microwave dielectric properties of $0.85CaWO_4-0.15LnNbO_4$ (Ln = La, Sm) ceramics were investigated as a function of the sintering temperature and $Li_2WO_4$ content from 0.8 wt.% to 1.5 wt.%. A single phase with tetragonal scheelite structure was obtained at a given composition ranges. For the specimens with $Li_2WO_4$, the sintering temperature could be effectively reduced from $1150^{\circ}C$ to $900^{\circ}C$ due to the enhancement of sinterability. Dielectric constant (K) of the specimens with $LaNbO_4$ and $SmNbO_4$ was increased with the increase of sintering temperature and/or $Li_2WO_4$ content. However, K of the specimens with $LaNbO_4$ was higher than that of $SmNbO_4$ due to the larger dielectric polarizability $(\alpha)$ of $LaNbO_4$ ($18.08{\AA}$) than that of $SmNbO_4$ ($16.75{\AA}$). With an increase of $Li_2WO_4$ content, Qf value of the specimens with $SmNbO_4$ was decreased, while that of the specimens with $LaNbO_4$ was increased. Temperature coefficient of resonant frequency (TCF) was increased with the increase of $Li_2WO_4$ content.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.260-260
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• 2007

Low-temperature sintering and dielectric properties of the $1-xBiNbO_4-xZnNb_2O_6$ ceramics (x=0.3, 0.5, and 0.7) with 10 wt% zinc borosilicate (ZBS) glass was investigated as a function of the substitution of $ZnNb_2O_6$ with a view to applying this system to LTCC technology. The all composition addition of 10 wt% ZBS glass ensured a successful sintering below $900^{\circ}C$. The the amount of $ZnNb_2O_6$ on $ZnNb_2O_6$ ceramics increased the $Q{\times}f$ values, but it decreased the sinterability and dielectric constant due to the higher $Q{\times}f$ value and sintering temperature of $ZnNb_2O_6$ than that of $ZnNb_2O_6$ ceramics. The increase of $ZnNb_2O_6$ content from 0.3 to 0.7 in the $1-xBiNbO_4-xZnNb_2O_6$ ceramics with 10 wt% ZBS glass sintered at $900^{\circ}C$ demonstrated 30~20 in the dielectric constant (${\varepsilon}_r$), 3,500~4,500 GHz in the $Q{\times}f$ value.