• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.11a
• /
• pp.255-258
• /
• 2000

In this study, the structural, dielectric and piezoelectric properties of Pb[(Sb$\sub$1/2/Nb$\sub$1/2/)$\sub$x/- (Ni$\sub$1/3/Nb$\sub$2/3/)$\sub$0.15-x/- (Zr,Ti)$\sub$0.85/]O$_3$(x = 0, 0.01, 0.02, 0.03, 0.04, 0.05) ceramics is investigated as a function of Pb(Sb$\sub$1/2/Nb$\sub$1/2/)O$_3$ (abbreviated PSN) substitution. With the increase of PSN substitution, the crystal structure is transO$_3$formed from the tetragonal phase to the rhombohedral phase and the grain size is decreased abruptly. The curie temperature is decreased with the PSN substitution. The dielectric constant is increased with the PSN substitution and maximum value of 2290 is obtained at 4mol% PSN. With the PSN substitution, the coercive field is increased and the remnant polarization is decreased. The Electromechanical coupling factor(k$\sub$p/) Is showed the highest value of 0.622 at lmol% PSN and the mechanical quality factor(Q$\sub$m/) is decreased abruptly with the PSN substitution.

• Proceedings of the KIEE Conference
• /
• 2005.07c
• /
• pp.2013-2015
• /
• 2005

In this paper, Effect of $BaSrTiO_3/Li_2CO_3$ on low temperature sintering and dielectric property of thick films has been investigated for variable capacitor on high frequency. The thick films were fabricated by the tape casting and then the structural and dielectric properties as a function of an addition composition ratio and sintering temperature were studied. For the thick film sintered at $1050^{\circ}C$, it was densified to 96% of $BaSrTiO_3$ theoretical density by the addition of 10 $wt{\cdot}%$ $BaSrTiO_3/Li_2CO_3$. Dielectric constant increased and Curie temperature lowered with the increased of $BaSrTiO_3/Li_2CO_3$ content, which probably can be explained by the substitution of $Ba^{3+},Li^{1+}$ on $RaTiO_3$ lattice. The tunability and dielectric loss of the $BaSrTiO_3/Li_2CO_3$ thick film, sintered at $1350^{\circ}C$, were about 26% and 0.234 at $10{\sim}15MHz$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.11a
• /
• pp.528-528
• /
• 2007

Cu CMP widely has been using for the formation of multilevel metal interconnects by the Cu damascene process. And lower dielectric constant materials are required for the below 45nm technology node. As the dielectric constant of dielectric materials are smaller, the strength of dielectric materials become weaker. Therefore these materials are easily damaged by high down pressure during conventional CMP. Also, technical problems such as surface scratches, delamination, dishing and erosion are also occurred. In order to overcome these problems in CMP, the ECMP (electro-chemical mechanical planarization) has been introduced. In this process, abrasive free electrolyte, soft pad and low down force were used. The electrolyte is one of important factor to solve these problems. Also, additives are required to improve the removal rate, uniformity, surface roughness, defects, and so on. In this study, KOH and $NaNO_3$ based electrolytes were used for Cu ECMP and the electrochemical behavior was evaluated by the potentiostat. Also, the Cu surface was observed by SEM as a function of applied voltage and chemical concentration.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.323-323
• /
• 2007

Influence of $La_2O_3$ addition to $CaO-B_2O_3$-based glass on the water leaching resistance of the glass was first investigated. The optimized $La_2O_3-CaO-B_2O_3$(LCB) glass was ball milled for varying time, followed by mixing with $Al_2O_3$ crystalline phase to form $Al_2O_3$-LCB glass composites at $875^{\circ}C$ for 1h. Microwave dielectric properties of the composites were investigated as a function of the ball milling time of the LCB glass. Dielectric constant and quality factor of the composites were 6.31 and 13856 GHz, respectively, when the LCB glass was ball milled for 2h prior to mixing with $Al_2O_3$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.324-324
• /
• 2007

Influence of $La_2O_3$ addition to $ZnO-B_2O_3$-based glass on the water leaching resistance of the glass was first investigated. The optimized $La_2O_3-ZnO-B_2O_3$ (LZB) glass was ball milled for varying time, followed by mixing with $Al_2O_3$ crystalline phase to form $Al_2O_3$-LZB glass composites at $875^{\circ}C$ for lh. Microwave dielectric properties of the composites were investigated as a function of the ball milling time of the LZB glass. Dielectric constant and quality factor of the composites were 6.01 and 11676 GHz, respectively, when the LZB glass was ball milled for 2h prior to mixing with $Al_2O_3$.

• 전자공학회논문지 IE
• /
• v.43 no.4
• /
• pp.8-12
• /
• 2006

In this paper, reflectance and the dielectric characteristics for $P_2O_5$-ZnO-BaO system and $SiO_2-ZnO-B_2O_3$ system have been investigated as a function of contents of $TiO_2$. The reflectance was decreased with increasing the contents of $TiO_2$ contents, and the reflectance of $P_2O_5$-ZnO-BaO system was lowered than that of $SiO_2-ZnO-B_2O_3$ system. The dielectric constant of $P_2O_5$-ZnO-BaO system was higher than $SiO_2-ZnO-B_2O_3$ system, and the dielectric constant in the both system was increased with increasing of $TiO_2$ contents. This can explained as the space charge effects. These results are could be applied to the lower dielectrics layer of PDP required high reflective ratio and breakdown strength.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.8 no.3
• /
• pp.503-507
• /
• 1998

Sintering behavior and dielectric peroperties of $xCaTiO_3-La(Zn_{1/2}Ti_{1/2})O_3$ system were investigated for better understanding of the microwave dielectric materials. In $xCaTiO_3-(1-x)La(Zn_{1/2}Ti_{1/2})O_3$ systems, solid solution type was focused as a function of composition(x=0.4-0.6) and sintered density. With increasing the sintered density, the relative dielectric constant was decreased and Q value was increased and then saturated. In solid solution type, dielectric constant was increased with increasing $CaTiO_3$ content. In $0.5\;CaTiO_3-0.5\; La(Zn_{1/2}Ti_{1/2})O_3$ case, dielectric constant(=48) and temperature coefficient of resonace frequency$(=-1 ppm/^{\circ}C$) were obtained.

• Journal of the Korean Ceramic Society
• /
• v.40 no.4
• /
• pp.346-349
• /
• 2003

Microwave dielectric characteristics and physical properties of the new Zr$_{1-x}$ (Bn$_{1}$3/Nb$_{2/3}$)xTi $O_4$ (0.2$\leq$x$\geq$ 1.0) system have been investigated as a function of the amount of Bn$_{1}$3/Nb$_{2/3}$ $O_2$substitution. With increasing Bn$_{1}$3/Nb$_{2/3}$ $O_2$ content (x), two phase regions were observed: $\alpha$-Pb $O_2$ solid solution (x<0.4), mixture of the rutile type Zn$_{1}$3/Nb$_{2/3}$Ti $O_4$ and the $\alpha$-Pb $O_2$ solid solution (x$\geq$0.4). In the$\alpha$-Pb $O_2$solid solution region below x<0.4, the Q.f$_{0}$ value sharply increased and the Temperature Coefficient of the Resonant Frequency(TCF) decreased with increasing Bn$_{1}$3/Nb$_{2/3}$ $O_2$ contents while dielectric constant (K) showed nearly same value. In the mixture region above x$\geq$4, the dielectric constant and TCF increased with increasing Bn$_{1}$3/Nb$_{2/3}$ $O_2$ content. Zr$_{1-x}$ (Zn$_{1}$3/Nb$_{2/3}$)xTi $O_4$ materials have excellent microwave dielectric properties with K=44.0, Q.f$_{0}$ : 41000 GHz and TCF =-3.0 ppm/$^{\circ}C$ at x=0.35.=0.35. x=0.35.=0.35.

• The Korean Journal of Ceramics
• /
• v.6 no.3
• /
• pp.258-261
• /
• 2000

Highly (h00)-oriented (Ba, Sr)TiO$_3$(BST) thin films were grown by pulsed laser deposition on the perovskite LaNiO$_3$(LNO) metallic oxide layer as a bottom electrode. The LNO films were deposited on SiO$_2$/Si substrates by rf-magnetron sputtering method. The crystalline phases of the BST film were characterized by x-ray $\theta$-2$\theta$, $\omega$-rocking curve and $\psi$-scan diffraction measurements. The surface microsturcture observed by scanning electron microscopy was very dense and smooth. The low-frequency dielectric responses of the BST films grown at various substrate temperatures were measured as a function of frequency in the frequency range from 0.1 Hz to 10 MHz. The BST films have the dielectric constant of 265 at 1 kHz and showed multiple dielectric relaxation at the low frequency region. The origin of these low-frequency dielectric relaxation are attributed to the ionized space charge carriers such as the oxygen vacancies and defects in BST film, the interfacial polarization in the grain boundary region and the electrode polarization. We studied also on the capacitance-voltage characteristics of BST films.

• Journal of the Korean Ceramic Society
• /
• v.36 no.12
• /
• pp.1350-1355
• /
• 1999

Sintering characteristics and dielectric properties of low temperature sinterable Glass/Ceramic dielectric materials were investigated. The dielectric materials which were developed for microwave frequency applications consist of SiO2-TiO2-Bi2O3-RO system(RO:BaO-CaO-SrO) crystallizable glass and Al2O3 as a ceramic filler. Sintering experiments showed that no more densification occurred above 80$0^{\circ}C$ and bulk density and shrinkage depended on Al2O3 content only. Results of dielectric measurements showed that $\varepsilon$r Q$\times$f and $\tau$f of the material containing 30wt% Al2O3 were 17.3, 600 and +23 ppm respectively. Those values for 45 and 60wt% Al2O3 samples were 11.6, 1400, +0.7 ppm and 7.2, 2000, -8.5 ppm, repectively. The results clearly showed that the Glas/Ceramic materials of present experiment decreased in $\varepsilon$r and increased in $\times$f value and changed from positive to negative value in $\tau$f value with the increasement of Al2O3 content.