• Journal of information and communication convergence engineering
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• v.9 no.2
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• pp.217-219
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• 2011

As silicon devices shrink and their density increases, the low dielectric constant materials instead of $SiO_2$ film is required. SiOC film as low-k films was deposited by the capacitively coupled plasma chemical vapor deposition and then annealed at $300{\sim}500^{\circ}C$ to find out the properties of the dependence on the temperature and polarity. This study researched the dielectric constant using by the structure of the metal/SiOC film/p-Si, chemical shift, thickness, refractive index and hardness. The trend of reflective index was inverse proportioned the thickness, but the dielectric constant was proportioned it. The dielectric constant decreased with decreasing the thickness and the increment of the refractive index.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.10
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• pp.896-900
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• 2008

A measurement method of the dielectric constant of materials whose standard sample is not prepared easily is proposed. The unprepared sample of the material is placed in a cavity, and the resonant frequency is measured. A commercial software simulates the same sample and the cavity leading to find the correct dielectric constant. The measured samples include a ceramic, a forced glass, and a powdered enamel. The measured dielectric constant of a ceramic, a forced glass, and a powdered enamel are 11-j0.0033(${\epsilon}_{\gamma}=11,\;tan{\delta}=0.0003$), 4.15-j0.053(${\epsilon}_{\gamma}=4.15,\;tan{\delta}=0.0128$), and 3.9-j0.042(${\epsilon}_{\gamma}=3.9,\;tan{\delta}=0.0108$) respectively.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.1
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• pp.9-15
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• 2011

This paper suggested the fast and easy method of the dielectric constant measurement for planar dielectrics using a microstrip line. The complex permittivity and permeability were presented by the first reflection and transmission coefficient which were derived from the scattering parameters. This method was verified by the measurement of a known planar dielectric using a microstrip line. This method can be applied to the dielectric constant measurement of unknown planar dielectric.

• Journal of the Korean Ceramic Society
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• v.21 no.2
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• pp.121-126
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• 1984

The dielectric properties of $BaTiO_3$ containing 0~0.3mol% and ZnO respectively as additives were investigated as a function of temperature from $25^{\circ}C$ to 14$0^{\circ}C$ and frequency from 24 KHz to 15MHz. The density of sintered $BaTiO_3$ was increased with addition of increasing to 0.15mol% amounts of $Sb_2O_3$ and the dielectric constant was also increased. This is due to space charge polarization with Ba vacancies. Above 0.15mol% $Sb_2O_3$ the density was decreased and the dielectric constant was also decreased due to occuring the discharge through voids. The density of sintered $BaTiO_3$ was decreased with addition of increasing to 0.15mol% amounts of ZnO and the dielectric constant was decreased due to occuring the discharge through voids. Above 0.15mol% ZnO the density was increased and the dielectric constant was also increased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.159-159
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• 2007

In order to reduce a signal delay in ULSI, low resistive metal and intermetal dielectric material of low dielectric constant are required. Ordered mesoporous silica film is proper to intermetal dielectric due to its low dielectric constant and superior mechanical properties. In this study, ordered mesoporous silica films was synthesized using TEOS (tetraethoxysilane) / MTES (methyltriethoxysilane) mixed silica precursor and Brij-$76^{(R)}$ surfactant. These films had the porosity of 40% and dielectric constant of 2.5. To lower dielectric constant, the ordered mesoporous silica films were surface-modified by HMDS (hexamethyldisilazane) treatment. HMDS substituted -OH groups on the surface of silica wall for -Si$(CH_3)_3$ groups. After the HMDS treatment, ordered mesoporous silica films were calcined at various calcination temperatures. Through the investigation, it was concluded that the proper calcination temperature is necessary as aspects of structural, electrical, and mechanical properties.

• Transactions on Electrical and Electronic Materials
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• v.14 no.6
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• pp.329-333
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• 2013

SiOC films were prepared by capacitively coupled plasma chemical vapor deposition, and the correlation between the binding energy by X-ray photoelectron spectroscopy and Arrhenius equation for ionization energy was studied. The ionization energy decreased with increase of the potential barrier, and then the dielectric constant also decreased. The binding energy decreased with increase of the potential barrier. The dielectric constant and electrical characteristic of SiOC film was obtained by Arrhenius equation. The dielectric constant of SiOC film was decreased by lowering the polarization, which was made from the recombination between opposite polar sites, and the dissociation energy during the deposition. The SiOC film with the lowest dielectric constant had a flat surface, which depended on how carbocations recombined with other broken bonds of precursor molecules, and it became a fine cross-linked structure with low ionization energy, which contributed to decreasing the binding energy by Si 2p, C 1s electron orbital spectra and O 1s electron orbital spectra. The dielectric constant after annealing decreased, owing to the extraction of the $H_2O$ group, and lowering of the polarity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.23-23
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• 2010

The $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMNO)-Bi composite films sandwiched by an $Al_2O_3$ protection layer exhibited a linear increase of a dielectric constant with increasing thickness and the 1000nm-thick BMNO-Bi composite films showed a dielectric constant (~220) higher than that of its bulk material (~210), keeping a low leakage current density of about $0.1{\mu}A/cm^2$. An enhancement of the dielectric constant in the BMNO-Bi composite films was attributed to the hybrid model combined by a space charge polarization, dipolar response, and nano-capacitors. On the other hand, 1000nm-thick BMNO-Bi composite films sandwiched by 40nm-thick BMNO layer exhibited a dielectric constant of about 450 at 100 kHz and a leakage current density of $0.1{\mu}A/cm^2$ at 6V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05b
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• pp.29-32
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• 2005

Poly (methyl methacrylate) (PMMA) is one of the promising representive of polymer gate dielectric for its high resistivity and sutible dielectric constant. PMMA (Mw=96700) films were prepared on p-Si by spin coating method. PMMA were coated compactively and flatly as observeed by AFM. MIS(Al/PMMA/p-Si) structure was made and capacitance-voltage (C-V) and current-voltage (I-V) measurements were done with PMMA films for different thermal treatment temperature. PMMA films were showed proper dielectric constant and breakdown voltage. Above the glass transition temperature PMMA films degraded. C-V measured at various frequencies, dielectric constant increased a little. The absence of hysteresis in the C-V characteristics, which eliminate the possibility of mobile charges in the PMMA films. The observed thermal stability, smooth surfaces, dielectric constant, I-V behavior implies PMMA formed by spin coating can be used as an efficient gate dielectric layer in OTFTs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.6
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• pp.429-433
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• 2013

PTFE composites for use of microwave substrate were fabricated by impregnation and heat treatment fabrication with glass fabric. This study shows dielectric properties such as dielectric constant and loss can be controlled by thickness of PTFE composite with change of pressure condition in heating press process. The dielectric constant of the PTFE composites has decreasing tendency as given higher pressure condition. The dielectric loss has similar result too. Especially, the case of the dielectric loss was affected by the condition of pressure at heating press and had the best performance under 3 MPa. In order to see the reason why thickness conditions make different, their microstructures were also observed.

• Applied Science and Convergence Technology
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• v.25 no.4
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• pp.77-80
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• 2016

The $PbSc_{1/2}Nb_{1/2}O_3$ ceramics at a relatively low temperature of $1300^{\circ}C$ was successful synthesized. Solid state reaction of two-step process is not necessary. The dielectric constant, dielectric loss and admittance of ceramic samples were determined. The pyroelectric characteristics are in good agreement with the dielectric properties. Ferroelectric properties of well-formed the $PbSc_{1/2}Nb_{1/2}O_3$ ceramics are in agreement with broad distribution of relaxation phenomenon. Relatively strong frequency dependent of dielectric constant is observed at about $110^{\circ}C$. The distinct thermal hysteresis was observed in the measurement of the dielectric constant and dielectric loss. The critical exponents of during cooling and heating measurements in the $PbSc_{1/2}Nb_{1/2}O_3$ ceramics were 1.14 and 1.59 at 1 kHz, respectively.