• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.11a
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• pp.287-288
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• 2008

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.341-344
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• 2006

LED chips are produced by cutting the sapphire on which GaN is evaporated. To cut the sapphire wafer into each LED chip, at first the wafer is scribed by diamond tool. To get the sharp groove shape for the nice cutting plane it is important the diamond tool shape, load, etc when the wafer is scribed. Here we tried to simulate the scribing process and get the scribing condition to reduce the wear rate of diamond tool for the sharp groove shape.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.27 no.8
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• pp.1309-1316
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• 2003

The general dicing process cuts a semiconductor wafer to lengthwise and crosswise direction by using a rotating circular diamond blade. But products with inferior quality are produced under the influence of several parameters in dicing process such as blade, wafer, cutting water and cutting conditions. Moreover we can not apply this dicing method to GaN wafer, because the GaN wafer is harder than the other wafer such as SiO2, GaAs, GaAsP, and AlGaAs. In order to overcome this problem, development of a new dicing process and determination of dicing parameters are necessary. This paper describes a new wafer dicing method using fixed diamond scriber and precision servo mechanism and determination of several parameters - scribing depth, scribing force, scriber inclined angle, scribing speed, and factor for scriber replacement - for a new dicing machine using scriber.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2009.10a
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• pp.407-408
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• 2009

• Journal of the Korean Society for Precision Engineering
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• v.20 no.2
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• pp.218-225
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• 2003

The general dicing process cuts a semiconductor wafer to lengthwise and crosswise direction by using a rotating circular diamond blade. However, inferior goods may be made under the influence of several parameters in dicing process such as blade, wafer, cutting water and cutting conditions. Moreover we can not apply this dicing method to a GaN wafer, because the GaN wafer is harder than other wafers such as SiO$_2$, GaAs, GaAsP, and AlGaAs. In order to overcome this problem, development of a new dicing process and determination of dicing parameters are necessary. This paper describes determination of several parameters - scribing depth, scribing force, scriber inclined angle, scribing speed, and factor for scriber replacement - for a new dicing machine using a scriber.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2002.10a
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• pp.164-167
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• 2002

The general dicing process cuts a semiconductor wafer to lengthwise and crosswise direction by using a rotating circular diamond blade. But inferior goods are made under the influence of several parameters in dicing process such as blade, wafer, cutting water and cutting conditions. Moreover we can not applicable this dicing method to GaN wafer, because the GaN wafer is harder than the other wafer such as SiO$_2$, GaAs, CaAsP, and AlCaAs. In order to overcome this problem, development of a new dicing process and determination of dicing parameters are necessary. This paper describes determination of several parameters - scribing depth, scribing force, scriber inclined angle, scribing speed, and factor for scriber replacement - for a new dicing machine using scriber.

• 제어로봇시스템학회:학술대회논문집
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• 2000.10a
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• pp.222-222
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• 2000

The general dicing process cuts a semiconductor wafer to lengthwise and crosswise direction by using a rotating circular diamond blade. But inferior goods are made under the influence of several parameters in dicing such as blade, wafer, cutting water and cutting conditions. Moreover we can not applicable this dicing method to GaN wafer, because the GaN wafer is harder than the other wafer as GaAs. In older to overcome this problem, a new dicing process is necessary. This paper describes a new machine using scriber and precision servo mechanism in order to dice a semiconductor wafer.

• Journal of Institute of Control, Robotics and Systems
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• v.8 no.5
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• pp.419-424
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• 2002

After the patterning and probe process of wafer have been achieved, the dicing processing is necessary to separate chips from a wafer. The dicing process cuts a semiconductor wafer to lengthwise and crosswise directions to make many chips. The existing general dicing method is the mechanical cutting using a narrow circular rotating blade impregnated diamond particles or laser cutting. Inferior goods can be made by the mechanical or laser cutting unless several parameters such as blade, wafer, cutting water and cutting conditions are properly set. Moreover, we can not apply these general dicing method to that of GaN wafer, because the GaN wafer is harder than general semiconductor wafers such as GaAs, GaAsP, AIGaAs and so forth. In order to overcome these problems, this paper describes a new wafer dicing method using fixed diamond scriber and precision servo mechanism.

• Proceedings of the Optical Society of Korea Conference
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• 2000.02a
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• pp.224-225
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• 2000

Transparent and hard materials such as sapphire are used for many industrial applications as optical windows, hard materials on mechanical contact against abrasion, and substrate materials for opto-electronic semiconductor devices such as blue LED and blue LD etc. The materials should be cut along the proper shapes possible to be used for each application. In case of blue LED, the blue LED wafer should be cut to thousands of blue LED pieces at the final stage of the manufacturing process. The process of cutting the wafer is usually divided into two steps. The wafer is scribed along the proper shapes in the first step. It is inserted between transparent flexible sheets for easy handling. And then, it is broken and split in the next step. Harder materials such as diamonds are usually used to scribe the wafer, while it has a problem of low depth of scribing and abrasion of the harder material itself. The low depth of scribing can induce failure in breaking the wafer along the scribed line. It was also known that the expensive diamond tip should be replaced frequently for the abrasion. (omitted)

• Tribology and Lubricants
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• v.24 no.6
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• pp.332-337
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• 2008

This paper presents the surface defect analysis based on the experimental investigation of scribed glasses. The scribing process by a diamond wheel cutter is widely used as a reliable and inexpensive method for sizing of glass sheets. The wheel cutter generates a small median crack on the glass surface, which is then propagated through the glass thickness for complete separation. The surface contour patterns in which are formed during a scribing process are strongly related to wheel cutter parameters such as wheel tip surface finish, tip angle and wheel diameter, and cutting process parameters such as scribing pressure, speed and tooling technique. The scribed surface of a glass sheet provides normal Wallner lines, which represent regular median cracks and crack propagation in glass thickness, and abnormal surface roughness patterns. In this experimental study, normal and abnormal surface topographic patterns are classified based on the surface defect profiles of scribed glass sheets. A normal surface of a scribed glass sheet shows regular Wallner lines with deep median cracks. But some specimens of scribed glass sheets show that abnormal surface profiles of glass sheets in two pieces are represented by a chipping, irregular surface cracks in depth, edge cracks, and combined crack defects. These surface crack patterns are strongly related to easy breakage of the scribed glass imposed by external forces. Thus the scribed glass with abnormal crack patterns should be removed during a quality control process based on the surface defect classification method as demonstrated in this study.