• 한국공간구조학회논문집
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• 제20권4호
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• pp.169-176
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• 2020

When an unexpected excessive seismic load is applied to the base isolation of arch structure, the seismic displacement of the base isolation may be very large beyond the limit displacement of base isolation. These excessive displacement of the base isolation causes a large displacement in the upper structure and large displacement of upper structure causes structural damage. Therefore, in order to limit the seismic displacement response of the base isolation, it is necessary to install an additional device such as an anti-uplift device to the base isolation. In this study, the installation direction of the base isolation and the control performance of the base isolation installed anti-uplift device were investigated. The installation direction of the base isolation of the arch structure is determined by considering the horizontal and vertical reaction forces of the arch structure. In addition, the separation distance of the anti-uplift device is determined in consideration of the design displacement of the base isolation and the displacement of the arch structure.

• Earthquakes and Structures
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• 제4권1호
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• pp.11-39
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• 2013

Since slender structures such as utility poles, radio masts, and chimneys, are essentially statically determinate structures, they often collapse during earthquakes. Although vibration control is the most logical method for improving the earthquake resistance of such structures, there are many practical problems with its implementation due to their very long natural vibration period. This paper proposes a new vibration control device to effectively prevent the collapse of slender structures subjected to strong earthquakes. The device consists of a pendulum, an elastic restraint and a lever, and is designed such that when it is attached to a slender structure, the second vibration mode of the structure corresponds to the first vibration mode of the same structure without the device attached. This is highly effective in causing the transverse motions of the device and the structure to oppose each other and so reduce the overall transverse vibration during an earthquake. In the present paper, the effectiveness of the vibration control device is first evaluated based on laboratory experiments and numerical studies. An example of applying the device to a tall chimney is then simulated. A new dynamic analytical method for slender structures with abrupt rigidity variations is then proposed.

• 전기학회논문지
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• 제62권11호
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• pp.1566-1570
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• 2013

In this paper, we analyzed the electric characteristics of the OLEDs device of which anode ITO has been treated with the oxygen plasma. We fabricated the basic three-layer structure (ITO / AF / $Alq_3$ / $Cs_2CO_3$ / Al) device, analyzed how the oxygen plasma treatments of the ITO surface affects to the electrical characteristics of OLEDs. We also produced a four-layer structure device (ITO / AF / TPD / $Alq_3$ / $Cs_2CO_3$ / Al) with the oxygen plasma treatment. From the comparative analysis to the devices, we confirmed following results. The three-layer structure OLEDs device with oxygen plasma treatment has better characteristics than the device without the treatments; maximum luminance, luminous efficiency, and external quantum efficiency are improved approximately 151 [%], 126 [%], and 175[%], respectively. Also, the electric characteristics of the four-layer structure device with oxygen plasma treatment are improved comparing to the characteristics of the three-layer structure device with oxygen plasma treatment; maximum luminance, luminous efficiency, and external quantum efficiency are improved approximately 144 [%], 115 [%], and 124[%], respectively.

• 한국인터넷방송통신학회논문지
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• 제15권2호
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• pp.189-194
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• 2015

본 논문에서는 열전소자의 구조에 따른 COB LED의 방열성능을 비교 분석하였다. COB LED의 발열부분과 접합하는 열전소자는 구리박판 구조와 세라믹 구조의 열전소자를 사용하였다. COB LED와 열전소자의 접합부분은 접촉식 온도계를 통해 온도 분포를 측정하였고, 각각의 열전소자는 0.1A, 0.3A, 0.5A, 0.7A의 전류를 입력시켜서 온도 변화를 측정하였다. COB LED의 열 응집현상이 나타나는 접합부분의 온도는 0.7A를 인가하였을 때 구리박판 구조의 열전소자에서 $59^{\circ}C$로 측정되었고, 세라믹 구조의 열전소자는 $67^{\circ}C$로 나타났으며, 구리박판 열전소자가 세라믹 구조의 열전소자 보다 $9^{\circ}C$가 낮게 측정됨으로써 방열성능이 더 우수함을 보였다.

• 한국해양공학회지
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• 제24권5호
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• pp.48-54
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• 2010

The analysis of the seismic risk of an offshore structure with a control device is presented. First, a probability density function was developed to represent seismic hazard, and seismic fragility under artificial earthquake conditions was determined. Fragility curves for an offshore structure with both passive and active control devices were determined. Displacement criteria were set to evaluate the performance of the structure. Based on numerical analysis, the seismic risk to the structure was considerably reduced when the structure had a seismic control device. The seismic risk to the actively controlled structure was decreased by 80% compared to the uncontrolled case. Reasonable performance evaluations of offshore structure with control devices can be conducted through risk analysis.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2001년도 춘계종합학술대회
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• pp.311-316
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• 2001

소자의 고집적을 위한 특성분석 기술은 빠른 변화를 보이고 있다. 이에 따라 고집적 소자의 특성을 시뮬레이션을 통하여 이해하고 이에 맞게 제작하는 기술을 매우 중요한 과제 중의 하나가 되었다. 소자가 마이크론급에서 나노급 이하로 작아지면서 그에 맞는 소자개발을 위해 여러 가지 구조가 제시되고 있는데 본 논문에서는 TCAD를 이용하여 여러 가지 구조 중에서 고농도로 도핑된 ground plane 위에 적층하여 만든 EFI MOSFET와 LDD구조의 단점을 개선한 newEPI MOSFET에 대해 조사하였다. 이 구조의 특성과 임팩트이온화와 전계 그리고 I-V 특성 곡선을 저 농도로 도핑된 드레인(LDD) MOSFET와 비교 분석하였다. 또한 TCAD의 유용성을 조사하여 시뮬레이터로서 적합함과 나노구조 소자에서의 스켈링이론의 적합함을 보았다.

• 전자공학회논문지A
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• 제32A권3호
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• pp.45-57
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• 1995

We derive analytic expressions for the spontaneous emission spectrum of a device using DFB structures including the effects of both facet reflections and the phase of a grating. In solution of coupled mode equations. Equations for the reations between the spontaneous emission spectrum and structure parameters of the device are derived to investigate the effect of structure parameters on the spontaneous emission spectrum and operating characteristics of possibility of evaluating the structure parameters of the device from its spontaneous emission spectrum.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.385-388
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• 2009

We have investigated the effect of the device structure on the performance of polycrystalline ZnO TFT and amorphous AZTO TFT with top gate and bottom gate structure. While the mobility of both TFTs showed relatively similar value in a top and bottom gate structure, bias stability was quite different depending on the device structure. Top gate TFT showed much less Vth shift under positive bias stress compared to that of bottom gate TFT. We attributed this different behavior to the defects formation on the gate insulator induced by energetic bombardment during the active layer deposition in a bottom gate TFT. We suggest the top gate oxide TFT would show more stable behavior under the Vgs bias.

• 전자공학회논문지A
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• 제33A권7호
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• pp.230-244
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• 1996

We derive analytic expressions for the spontaneous emission spectrum (SES) of a multisection distributed feedback (DFB) structure device employing complex coupled gratings including the effects of both facets reflections. The multisection DFB structure device used in the analysis is a general model which allows the independent phase of a grating in each section, and the sections without gratings. The expressions are the same as those derived by makino and glinski in case the gratings are index coupled and the phase of a grating in each section, ${\varphi}_k$ is '0' which means the phase of gratings in the device is ocntinuous. The expressions for the SES of a phase-shift-controlled (PSC) DFB structure device using tunable devices are derived from the general expressions. The number of parametes of the expressions is reduced by using the parameter of effective phase shift defined by the sum of the phase shift in a PSC region and the difference of the phase of a grating in each active region. Equations showing the effect of both facets reflections and the effective phase shift on the SES are derived. The validaty of the equations is verified by computer simultions. Computer simulation results also show the possibility of evaluating the structure parametes of the device from its SES.

• 센서학회지
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• 제33권3호
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• pp.165-172
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• 2024

In this study, we investigated the detection properties of piezoresistive carbon nanotubes/polydimethylsiloxane (CNT/PDMS) devices with porous structures under applied pressure. The device, having dimensions of 10 mm × 10 mm × 5 mm, was fabricated with a porosity of 74.5%. To fabricate piezoresistive CNT/PDMS devices, CNTs were added using two different methods. In the first method, the CNTs were mixed with PDMS before the fabrication of the porous structure, while in the second, the CNTs were coated after the fabrication of the porous structure. Various detection properties of the fabricated devices were examined at different applied pressures. The CNT-coated device exhibited stable outputs with lesser variation than the CNT-mixed device. Moreover, the CNT-coated device exhibited improved reaction properties. The response time of the CNT-coated device was 1 min, which was approximately about 20 times faster than that of the CNT-mixed device. Considering these properties, CNT-coated devices are more suitable for sensing devices. To verify the CNT-coated device as a real sensor, it was applied to the gripping sensor system. A multichannel sensor system was used to measure the pressure distribution of the gripping sensor system. Under various gripping conditions, this system successfully measured the distributed pressures and exhibited stable dynamic responses.