• Journal of Korean Association for Spatial Structures
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• v.20 no.4
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• pp.169-176
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• 2020

When an unexpected excessive seismic load is applied to the base isolation of arch structure, the seismic displacement of the base isolation may be very large beyond the limit displacement of base isolation. These excessive displacement of the base isolation causes a large displacement in the upper structure and large displacement of upper structure causes structural damage. Therefore, in order to limit the seismic displacement response of the base isolation, it is necessary to install an additional device such as an anti-uplift device to the base isolation. In this study, the installation direction of the base isolation and the control performance of the base isolation installed anti-uplift device were investigated. The installation direction of the base isolation of the arch structure is determined by considering the horizontal and vertical reaction forces of the arch structure. In addition, the separation distance of the anti-uplift device is determined in consideration of the design displacement of the base isolation and the displacement of the arch structure.

• Earthquakes and Structures
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• v.4 no.1
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• pp.11-39
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• 2013

Since slender structures such as utility poles, radio masts, and chimneys, are essentially statically determinate structures, they often collapse during earthquakes. Although vibration control is the most logical method for improving the earthquake resistance of such structures, there are many practical problems with its implementation due to their very long natural vibration period. This paper proposes a new vibration control device to effectively prevent the collapse of slender structures subjected to strong earthquakes. The device consists of a pendulum, an elastic restraint and a lever, and is designed such that when it is attached to a slender structure, the second vibration mode of the structure corresponds to the first vibration mode of the same structure without the device attached. This is highly effective in causing the transverse motions of the device and the structure to oppose each other and so reduce the overall transverse vibration during an earthquake. In the present paper, the effectiveness of the vibration control device is first evaluated based on laboratory experiments and numerical studies. An example of applying the device to a tall chimney is then simulated. A new dynamic analytical method for slender structures with abrupt rigidity variations is then proposed.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.62 no.11
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• pp.1566-1570
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• 2013

In this paper, we analyzed the electric characteristics of the OLEDs device of which anode ITO has been treated with the oxygen plasma. We fabricated the basic three-layer structure (ITO / AF / $Alq_3$ / $Cs_2CO_3$ / Al) device, analyzed how the oxygen plasma treatments of the ITO surface affects to the electrical characteristics of OLEDs. We also produced a four-layer structure device (ITO / AF / TPD / $Alq_3$ / $Cs_2CO_3$ / Al) with the oxygen plasma treatment. From the comparative analysis to the devices, we confirmed following results. The three-layer structure OLEDs device with oxygen plasma treatment has better characteristics than the device without the treatments; maximum luminance, luminous efficiency, and external quantum efficiency are improved approximately 151 [%], 126 [%], and 175[%], respectively. Also, the electric characteristics of the four-layer structure device with oxygen plasma treatment are improved comparing to the characteristics of the three-layer structure device with oxygen plasma treatment; maximum luminance, luminous efficiency, and external quantum efficiency are improved approximately 144 [%], 115 [%], and 124[%], respectively.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.15 no.2
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• pp.189-194
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• 2015

In this study, the heat radiation performance of COB LED according to the structure of thermoelectric device were compared. Thermoelectric device of the sheet copper structure and ceramic structure were used for bonding with the heating part of the COB LED. The temperature distribution in the bonding part of the thermoelectric device of COB LED was measured with a contact-type thermometer. The temperature variation of the thermoelectric device was measured by inputting the currents of 0.1A, 0.3A, 0.5A, and 0.7A. When 0.7A was applied, the temperature of the bonding part where there was a heat aggregation phenomenon of the COB LED was $59^{\circ}C$ for thermoelectric device of the sheet copper structure and $67^{\circ}C$ for the thermoelectric device of the ceramic structure. Therefore, the sheet copper thermoelectric device whose temperature was lower by $9^{\circ}C$ showed better heat radiation performance than those of the ceramic structure.

• Journal of Ocean Engineering and Technology
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• v.24 no.5
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• pp.48-54
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• 2010

The analysis of the seismic risk of an offshore structure with a control device is presented. First, a probability density function was developed to represent seismic hazard, and seismic fragility under artificial earthquake conditions was determined. Fragility curves for an offshore structure with both passive and active control devices were determined. Displacement criteria were set to evaluate the performance of the structure. Based on numerical analysis, the seismic risk to the structure was considerably reduced when the structure had a seismic control device. The seismic risk to the actively controlled structure was decreased by 80% compared to the uncontrolled case. Reasonable performance evaluations of offshore structure with control devices can be conducted through risk analysis.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2001.05a
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• pp.311-316
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• 2001

The technology for characteristic analysis of device for high integration is changing rapidly. Therefore to understand characteristics of high-integrated device by computer simulation and fabricate the device having such characteristics became one of very important subjects. At devices become smaller from submicron to nanometer, we have investigated MOSFET built on an epitaxial layer(EPI) of a heavily-doped ground plane, and also newEPI MOSFET for improved structure to weak point of LDD structure by TCAD(Technology Computer Aided Design) to develop optimum device structure. We analyzed and compared the EPI device characteristics such as impart ionization, electric field and I-V curve with those of lightly-doped drain(LDD) MOSFET. Also, we presented that TCAD simulator is suitable for device simulation and the scaling theory is suitable at nano structure device.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.3
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• pp.45-57
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• 1995

We derive analytic expressions for the spontaneous emission spectrum of a device using DFB structures including the effects of both facet reflections and the phase of a grating. In solution of coupled mode equations. Equations for the reations between the spontaneous emission spectrum and structure parameters of the device are derived to investigate the effect of structure parameters on the spontaneous emission spectrum and operating characteristics of possibility of evaluating the structure parameters of the device from its spontaneous emission spectrum.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.385-388
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• 2009

We have investigated the effect of the device structure on the performance of polycrystalline ZnO TFT and amorphous AZTO TFT with top gate and bottom gate structure. While the mobility of both TFTs showed relatively similar value in a top and bottom gate structure, bias stability was quite different depending on the device structure. Top gate TFT showed much less Vth shift under positive bias stress compared to that of bottom gate TFT. We attributed this different behavior to the defects formation on the gate insulator induced by energetic bombardment during the active layer deposition in a bottom gate TFT. We suggest the top gate oxide TFT would show more stable behavior under the Vgs bias.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.7
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• pp.230-244
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• 1996

We derive analytic expressions for the spontaneous emission spectrum (SES) of a multisection distributed feedback (DFB) structure device employing complex coupled gratings including the effects of both facets reflections. The multisection DFB structure device used in the analysis is a general model which allows the independent phase of a grating in each section, and the sections without gratings. The expressions are the same as those derived by makino and glinski in case the gratings are index coupled and the phase of a grating in each section, ${\varphi}_k$ is '0' which means the phase of gratings in the device is ocntinuous. The expressions for the SES of a phase-shift-controlled (PSC) DFB structure device using tunable devices are derived from the general expressions. The number of parametes of the expressions is reduced by using the parameter of effective phase shift defined by the sum of the phase shift in a PSC region and the difference of the phase of a grating in each active region. Equations showing the effect of both facets reflections and the effective phase shift on the SES are derived. The validaty of the equations is verified by computer simultions. Computer simulation results also show the possibility of evaluating the structure parametes of the device from its SES.

• Journal of Sensor Science and Technology
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• v.33 no.3
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• pp.165-172
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• 2024

In this study, we investigated the detection properties of piezoresistive carbon nanotubes/polydimethylsiloxane (CNT/PDMS) devices with porous structures under applied pressure. The device, having dimensions of 10 mm × 10 mm × 5 mm, was fabricated with a porosity of 74.5%. To fabricate piezoresistive CNT/PDMS devices, CNTs were added using two different methods. In the first method, the CNTs were mixed with PDMS before the fabrication of the porous structure, while in the second, the CNTs were coated after the fabrication of the porous structure. Various detection properties of the fabricated devices were examined at different applied pressures. The CNT-coated device exhibited stable outputs with lesser variation than the CNT-mixed device. Moreover, the CNT-coated device exhibited improved reaction properties. The response time of the CNT-coated device was 1 min, which was approximately about 20 times faster than that of the CNT-mixed device. Considering these properties, CNT-coated devices are more suitable for sensing devices. To verify the CNT-coated device as a real sensor, it was applied to the gripping sensor system. A multichannel sensor system was used to measure the pressure distribution of the gripping sensor system. Under various gripping conditions, this system successfully measured the distributed pressures and exhibited stable dynamic responses.