• Title/Summary/Keyword: device physics

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Magnetic and Electric Transport Properties of MnTe Thin Film Grown by Molecular Beam Epitaxy (분자선 증착법에 의해 성장한 MnTe 박막의 자기적 및 전기수송 특성)

  • Kim, Woo-Chul;Bae, Sung-Whan;Kim, Sam-Jin;Kim, Chul-Sung;Kim, Kwang-Joo;Yoon, Jung-Bum;Jung, Myung-Hwa
    • Journal of the Korean Magnetics Society
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    • v.17 no.2
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    • pp.81-85
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    • 2007
  • MnTe layers of high crystalline quality were successfully grown on Si(100) : B and Si(111) substrates by molecular beam epitaxy (MBE). Under tellurium-rich condition and the substrate temperature around $400^{\circ}C$, a layer thickness of $700{\AA}$ could be easily obtained with the growth rate of $1.1 {\AA}/s$. We investigated the structural, magnetic and transport properties of MnTe layers by using x-ray diffraction (XRD), superconducting quantum interference device (SQUID) magnetometry, and physical properties measurement system (PPMS). Characterization of MnTe layers on Si(100) : B and Si(111) substrates by XRD revealed a hexagonal structure of polycrystals with lattice parameters, ${\alpha}=4.143{\pm}0.001{\AA}\;and\;c=6.707{\pm}0.001{\AA}$. Investigation of magnetic and transport properties of MnTe films showed anomalies unlike antiferromagnetic powder MnTe. The temperature dependence of the magnetization data taken in zero-field-tooling (ZFC) and field-cooling (FC) conditions indicates three magnetic transitions at around 21, 49, and 210 K as well as the great irreversibility between ZFC and FC magnetization in the films. These anomalies are attributable to a magnetic-elastic coupling in the films. Magnetization measurements indicate ferromagnetic behaviour with hysteresis loops at 5 and 300 K for MnTe polycrystalline film. The coercivity ($H_c$) values at 5 and 300 K are 55 and 44 Oe, respectively. In electro-transport measurements, the temperature dependence of resistivity revealed a noticeable semiconducting behaviours and showed conduction via Mott variable range hopping at low temperatures.

Mixed-mode simulation of transient characteristics of 4H-SiC DMOSFETs - Impact off the interface changes (Mixde-mode simulation을 이용한 4H-SiC DMOSFETs의 계면상태에서 포획된 전하에 따른 transient 특성 분석)

  • Kang, Min-Seok;Choe, Chang-Yong;Bang, Wook;Kim, Sang-Chul;Kim, Nam-Kyun;Koo, Sang-Mo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.11a
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    • pp.55-55
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    • 2009
  • Silicon Carbide (SiC) is a material with a wide bandgap (3.26eV), a high critical electric field (~2.3MV/cm), a and a high bulk electron mobility (${\sim}900cm^2/Vs$). These electronic properties allow high breakdown voltage, high frequency, and high temperature operation compared to Silicon devices. Although various SiC DMOSFET structures have been reported so far for optimizing performances. the effect of channel dimension on the switching performance of SiC DMOSFETs has not been extensively examined. In this paper, we report the effect of the interface states ($Q_s$) on the transient characteristics of SiC DMOSFETs. The key design parameters for SiC DMOSFETs have been optimized and a physics-based two-dimensional (2-D) mixed device and circuit simulator by Silvaco Inc. has been used to understand the relationship with the switching characteristics. To investigate transient characteristic of the device, mixed-mode simulation has been performed, where the solution of the basic transport equations for the 2-D device structures is directly embedded into the solution procedure for the circuit equations. The result is a low-loss transient characteristic at low $Q_s$. Based on the simulation results, the DMOSFETs exhibit the turn-on time of 10ns at short channel and 9ns at without the interface charges. By reducing $SiO_2/SiC$ interface charge, power losses and switching time also decreases, primarily due to the lowered channel mobilities. As high density interface states can result in increased carrier trapping, or recombination centers or scattering sites. Therefore, the quality of $SiO_2/SiC$ interfaces is important for both static and transient properties of SiC MOSFET devices.

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Enhancement of PLED lifetime using thin film passivation with amorphous Mg-Zn-F

  • Kang, Byoung-Ho;Kim, Do-Eok;Kim, Jae-Hyun;Seo, Jun-Seon;Kim, Hak-Rin;Lee, Hyeong-Rag;Kwon, Dae-Hyuk;Kang, Shin-Won
    • Journal of Information Display
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    • v.11 no.1
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    • pp.8-11
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    • 2010
  • In this study, a new thin films passivation technique using Zn with high electronegativity and $MgF_2$, a fluorine material with better optical transmittance than the sealing film materials that have thus far been reported was proposed. Targets with various ratios of $MgF_2$ to Zn (5:5, 4:6 and 3:7) were fabricated to control the amount of Zn in the passivation films. The Mg-Zn-F films were deposited onto the substrates and Zn was located in the gap between the lattices of $MgF_2$ without chemical metathesis in the Mg-Zn-F films. The thickness and optical transmittance of the deposited passivation films were approximately 200 nm and 80%, respectively. It was confirmed via electron dispersive spectroscopy (EDS) analysis that the Zn content of the film that was sputtered using a 4:6 ratio target was 9.84 wt%. The Zn contents of the films made from the 5:5 and 3:7 ratio targets were 2.07 and 5.01 wt%, respectively. The water vapor transmission rate (WVTR) was determined to be $38^{\circ}C$, RH 90-100%. The WVTR of the Mg-Zn-F film that was deposited with a 4:6 ratio target nearly reached the limit of the equipment, $1\times10^{-3}\;gm^2{\cdot}day$. As the Zn portion increased, the packing density also increased, and it was found that the passivation films effectively prevented the permeation by either oxygen or water vapor. To measure the characteristics of gas barrier, the film was applied to the emitting device to evaluate their lifetime. The lifetime of the applied device with passivation was increased to 25 times that of the PLED device, which was non-passivated.

Understanding the Selective Attention and Animation Induction Device According to the Visual Capture of Audience (관객의 시각포획현상에 따른 선택적 주의집중과 애니메이션 유도장치의 이해)

  • Lee, Jong-Han
    • Cartoon and Animation Studies
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    • s.41
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    • pp.133-152
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    • 2015
  • Some artists and scientists in physics and animation originating from research on its form of expression thanks to the rapid development of the example in the late 20th century image production technology integrating existing media feature, perform a re-creation and pop culture content has been recognized as a key factor. animation of the modern emphasis is also commercial and artistic activities as show whether the artist can not be excluded that also target audience. The audience does not want only to receive offers simply 'seeing' and 'hearing' in the animation requires a more indirect mental met. the other side, the director should lead the audience to immerse myself in work as intended mystification induce the world. where a conflict occurs between the audience and the director and The director needs to have its troubleshooting point to 'Technology of the communication'. Which is reduced to 'How will tell,' is technology communication technologies that are abbreviated representations of animation director is accessible to the audience and it is a close relationship between the psychological aspect of audience. Because, the audience is reproduced in a limited space, but he called on the board of directors and the same time the screen, the audience located at reception and the director located at provide. It is given. led force is given to the director. for this reason, The director needs to pay attention to the psychological aspect of audience this can be explained based on psychoanalytic theory. In this paper, "How can you lie to the audience and the director is the same line?" put down logic that is the animation audience under the logic that takes place visually capture phenomenon "selective attention" and sub-concept of "goal-directed selection' and 'stimulus-driven capturel' for theory of psychology. also, Induction device to elicit selective attention of the audience accordingly, let's consider whether and how they apply in animation.

Dynamic Pyroelectric Properties of The $Pb(Zr_{0.9}Ti_{0.1})O_3$ Ceramics ($Pb(Zr_{0.9}Ti_{0.1})O_3$ 세라믹 Dynamic 초전특성에 관한 연구)

  • Min, Kyung-Jin;Kang, Seong-Jun;Chang, Dong-Hoon;Yoon, Yung-Sup
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.37 no.8
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    • pp.28-34
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    • 2000
  • Pyroelectric properties of the $Pb(Zr_{0.9}Ti_{0.1})O_3$ ceramics having the rhombohedral structure have been studied by using the dynamic measurement method. The pyroelectric responses of the $Pb(Zr_{0.9}Ti_{0.1})O_3$ ceramics are characterized in both low and high medulation frequency regions and their frequency depences are observed. In the low frequency region (2~200Hz), the change of polarization increases and shows the maximum since the reorientation rate of domains is higher than the modulation frequency. Inthe high frequency region (200~2000Hz), the pyroelectrci response decreases as the frequency increases, because the reorientation of domains is suppressed and so the change of polarization decreases. Pyroelectric coefficient, figure of merit, noise equivalent power and detectivity of the $Pb(Zr_{0.9}Ti_{0.1})O_3$ ceramics are measured as $1.6{\times}10^{-8}C/cm^2{\cdot},\;1.6{\times}10^{-11}C{\cdot}cm/J,\;2.4{\times}10^{-7}W/Hz^{1/2}\;and\;4.17{\times}10^6cm{\cdot}Hz^{1/2}/W$, respectively.

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Distribution of Magnetic Field Depending on the Current in the μ-turn Coil to Capture Red Blood Cells (적혈구 포획용 미크론 크기 코일에 흐르는 전류의 크기에 따른 자기장 분포 특성)

  • Lee, Won-Hyung;Chung, Hyun-Jun;Kim, Nu-Ri;Park, Ji-Soo;Lee, Sang-Suk;Rhee, Jang-Roh
    • Journal of the Korean Magnetics Society
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    • v.25 no.5
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    • pp.162-168
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    • 2015
  • The ${\mu}$-turn coil having a width of ${\mu}m$ on the GMR-SV (giant magnetoresistance-spin valve) device based on the antiferromagnetic IrMn layer was fabricated by using the optical lithography process. In the case of GMR-SV film and GMR-SV device, the magnetoresistance ratios and the magnetic sensitivities are 4.4%, 2.0%/Oe and 1.6 %, 0.1%/Oe, respectively. In the y-z plane the distribution of magnetic field of GMR-SV device and $10{\mu}$-turns coil which put under the several magnetic bead(MB)s with a diameter of $1{\mu}m$ attached to RBC (red blood cell) was analyzed by the computer simulation using the finite element method. When the AC currents of 20 kHz from 0.1 mA to 10.0 mA flow to the 10 turns ${\mu}$-coil, the magnetic field at the position of $z=0{\mu}m$ at the center of coil was calculated from $30.1{\mu}T$ to $3060{\mu}T$ in proportion to the current. The magnetic field at the position of $z=10{\mu}m$ was decreased to one-sixth of that of $z=0{\mu}m$. It was confirmed that the $10{\mu}$-turn coil having enough magnitude of magnetic field for the capture of RBC is possible to use as a biosensor for the detection of magnetic beads attached to RBC.

p-Type AlN epilayer growth for power semiconductor device by mixed-source HVPE method (혼합소스 HVPE 방법에 의한 전력 반도체 소자용 p형 AlN 에피층 성장)

  • Lee, Gang Seok;Kim, Kyoung Hwa;Kim, Sang Woo;Jeon, Injun;Ahn, Hyung Soo;Yang, Min;Yi, Sam Nyung;Cho, Chae Ryong;Kim, Suck-Whan
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.29 no.3
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    • pp.83-90
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    • 2019
  • In this paper, Mg-doped AlN epilayers for power semiconductor devices are grown by mixed-source hydride vapor phase epitaxy. Magnesium is used as p-type dopant material in the grown AlN epilayer. The AlN epilayers on the GaN-templated sapphire substrate and GaN-templated-patterned sapphire substrate (PSS), respectively, as the base substrates for device application, were selectively grown. The surface and the crystal structures of the AlN epilayers were investigated by field emission scanning electron microscopy (FE-SEM) and high-resolution-X-ray diffraction (HR-XRD). From the X-ray photoelectron spectroscopy (XPS) and Raman spectra results, the p-type AlN epilayers grown by using the mixed-source HVPE method could be applied to power devices.

Quality Assurance of Volumetric Modulated Arc Therapy for Elekta Synergy (Elekta Synergy 선형가속기를 이용한 입체적세기조절회전방사선치료(VMAT) 정도관리)

  • Shim, Su-Jung;Shim, Jang-Bo;Lee, Sang-Hoon;Min, Chul-Kee;Cho, Kwang-Hwan;Shin, Dong-Oh;Choi, Jin-Ho;Park, Sung-Ill;Cho, Sam-Ju
    • Progress in Medical Physics
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    • v.23 no.1
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    • pp.33-41
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    • 2012
  • For applying the quality assurance (QA) of volumetric modulated arc therapy (VMAT) introduced in Eulji Hospital, we classify it into three different QA steps, treatment planning QA, pretreatment delivering QA, and treatment verifying QA. These steps are based on the existing intensity modulated radiation therapy (IMRT) QA that is currently used in our hospital. In each QA step, the evaluated items that are from QA program are configured and documented. In this study, QA program is not only applied to actual patient treatment, but also evaluated to establish a reference of clinical acceptance in pretreatment delivering QA. As a result, the confidence limits (CLs) in the measurements for the high-dose and low-dose regions are similar to the conventional IMRT level, and the clinical acceptance references in our hospital are determined to be 3 to 5% for the high-dose and the low-dose regions, respectively. Due to the characteristics of VMAT, evaluation of the intensity map was carried out using an ArcCheck device that was able to measure the intensity map in all directions, $360^{\circ}$. With a couple of dosimetric devices, the gamma index was evaluated and analyzed. The results were similar to the result of individual intensity maps in IMRT. Mapcheck, which is a 2-dimensional (2D) array device, was used to display the isodose distributions and gave very excellent local CL results. Thus, in our hospital, the acceptance references used in practical clinical application for the intensity maps of $360^{\circ}$ directions and the coronal isodose distributions were determined to be 93% and 95%, respectively. To reduce arbitrary uncertainties and system errors, we had to evaluate the local CLs by using a phantom and to cooperate with multiple organizations to participate in this evaluation. In addition, we had to evaluate the local CLs by dividing them into different sections about the patient treatment points in practical clinics.

Computer Assisted EPID Analysis of Breast Intrafractional and Interfractional Positioning Error (유방암 방사선치료에 있어 치료도중 및 분할치료 간 위치오차에 대한 전자포탈영상의 컴퓨터를 이용한 자동 분석)

  • Sohn Jason W.;Mansur David B.;Monroe James I.;Drzymala Robert E.;Jin Ho-Sang;Suh Tae-Suk;Dempsey James F.;Klein Eric E.
    • Progress in Medical Physics
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    • v.17 no.1
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    • pp.24-31
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    • 2006
  • Automated analysis software was developed to measure the magnitude of the intrafractional and interfractional errors during breast radiation treatments. Error analysis results are important for determining suitable planning target volumes (PTV) prior to Implementing breast-conserving 3-D conformal radiation treatment (CRT). The electrical portal imaging device (EPID) used for this study was a Portal Vision LC250 liquid-filled ionization detector (fast frame-averaging mode, 1.4 frames per second, 256X256 pixels). Twelve patients were imaged for a minimum of 7 treatment days. During each treatment day, an average of 8 to 9 images per field were acquired (dose rate of 400 MU/minute). We developed automated image analysis software to quantitatively analyze 2,931 images (encompassing 720 measurements). Standard deviations ($\sigma$) of intrafractional (breathing motion) and intefractional (setup uncertainty) errors were calculated. The PTV margin to include the clinical target volume (CTV) with 95% confidence level was calculated as $2\;(1.96\;{\sigma})$. To compensate for intra-fractional error (mainly due to breathing motion) the required PTV margin ranged from 2 mm to 4 mm. However, PTV margins compensating for intefractional error ranged from 7 mm to 31 mm. The total average error observed for 12 patients was 17 mm. The intefractional setup error ranged from 2 to 15 times larger than intrafractional errors associated with breathing motion. Prior to 3-D conformal radiation treatment or IMRT breast treatment, the magnitude of setup errors must be measured and properly incorporated into the PTV. To reduce large PTVs for breast IMRT or 3-D CRT, an image-guided system would be extremely valuable, if not required. EPID systems should incorporate automated analysis software as described in this report to process and take advantage of the large numbers of EPID images available for error analysis which will help Individual clinics arrive at an appropriate PTV for their practice. Such systems can also provide valuable patient monitoring information with minimal effort.

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Postoperative Complications after Preoperative Chemoradiotherapy Combined with Hyperthermia in Locally Advanced Rectal Cancer (국소 진행성 직장암의 수술전 동시 화학방사선치료와 온열치료병합시 수술후 부작용)

  • Yea, Ji Woon
    • Progress in Medical Physics
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    • v.25 no.2
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    • pp.89-94
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    • 2014
  • We investigated whether regional hyperthermia (HT) increased post-surgical complications in patients with locally advanced rectal cancer treated with preoperative concurrent chemoradiotherapy (CCRT). Between 1996 and 2007, 205 patients treated with preoperative CCRT and curative surgery were evaluable for the analysis of acute and late toxicities. A total dose of 39.6 Gy or 45 Gy was delivered concurrently with one or two cycles of chemotherapy (5-fluorouracil, leucovorin). Eighty-eight patients received regional HT twice a week using an 8-MHz radiofrequency capacitive heating device. Surgery was performed 4~6 weeks after the completion of preoperative CCRT. The median age was 59 years (range, 18~83) and the median follow-up period was 61months (range, 2~191). The 5-year overall survival and complication-free survival rate of all patients was 77.4% and 73.7%, respectively. Early leakage, delayed leakage, anastomotic stricture, fistula, and small bowel obstruction occurred in 1.0%, 2.9%, 1.5%, 5.9%, and 17.1%, respectively. HT did not increase all kinds of complications. The 5-year complication-free survival rate was 71.8% in the non-HT group and 76.3% in the HT group (p=0.293). Regional HT did not increase postoperative complications in patients with locally advanced rectal cancer treated with preoperative CCRT followed by curative surgery.