• Current Applied Physics
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• v.18 no.12
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• pp.1592-1599
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• 2018

The present study deals with the effect of dual cathode buffer layer (CBL) on the performance of bilayer of 4,4'-cyclohexylidenebis[N,N-bis(4-methylphenyl)benzenamine] (TAPC) and fullerene (C70)-based organic solar cell (OSC) with low donor concentration. OSC devices with CBLs have been fabricated using thermal vapor deposition technique. We report the use of lithium fluoride (LiF) and molybdenum trioxide ($MoO_3$) as CBLs. The insertion of LiF between C70 and aluminium (Al) electrode enhances the power conversion efficiency (PCE) of device from 1.89% to 2.47% but quenching of photogenerated excitons is observed at interface of C70 and LiF layers. Incorporation of $MoO_3$ between LiF and Al electrode further enhances PCE of device to 3.51%. This has also improved the material quality and device properties, by preventing the formation of gap states and diminishing exciton quenching.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.285-285
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• 2016

Resistive random access memory devices have been widely studied due to their high performance characteristics, such as high scalability, fast switching, and low power consumption. However, fluctuation in operational parameters remains a critical weakness that leads to device failures. Although the random formation and rupture of conducting filaments (CFs) in an oxide matrix during resistive switching processes have been proposed as the origin of such fluctuations, direct observations of the formation and rupture of CFs at the device scale during resistive switching processes have been limited by the lack of real-time large-area imaging methods. Here, a novel imaging method is proposed for monitoring CF formation and rupture across the whole area of a memory cell during resistive switching. A hybrid structure consisting of a resistive random access memory and a light-emitting diode enables real-time monitoring of CF configuration during various resistive switching processes including forming, semi-forming, stable/unstable set/reset switching, and repetitive set switching over 50 cycles.

• Applied Science and Convergence Technology
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• v.26 no.3
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• pp.47-49
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• 2017

Photocurrent enhancement has been investigated in monolayer (1L) $MoS_2$ with PbS quantum dots (QDs). A metal-semiconductor-metal (Au-1L $MoS_2$-Au) junction device is fabricated using a standard photolithography method. Considerably improved photo-electrical properties are obtained by coating PbS QDs on the Au-1L $MoS_2$-Au device. Time dependent photoconductivity and current-voltage characteristics are investigated. For the QDs-coated $MoS_2$ device, it is observed that the photocurrent is considerably enhanced and the decay life time becomes longer. We propose that carriers in QDs are excited and transferred to the $MoS_2$ channel under light illumination, improving the photocurrent of the 1L $MoS_2$ channel. Our experimental findings suggest that two-dimensional layered semiconductor materials combined with QDs could be used as building blocks for highly-sensitive optoelectronic detectors including radiation sensors.

• Proceedings of the Korean Magnestics Society Conference
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• 2008.12a
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• pp.150.1-150.1
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• 2008

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.145-146
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• 2000

Primary emphasis was placed on the electrophoretic deposition of low voltage phosphor to indium-tin oxide-coated glass for the application of field emission display. The phosphor deposited by various parameters, such as deposition time and applied voltages was examined in detail. In addition, a comparison was made by analyzing luminance properties of the phosphor mixed with and without conducting $In_2O_3$ powder of less than 1um size. The measurement was performed as a function of $In_2O_3$ concentration from 3% to 15% by weight. The enhanced impact of indium powder mixing on the phosphor was clearly demonstrated by aging performance curve at 1000V excitation voltages with a current density of $1\;mA/cm^2$

• Proceedings of the Korean Magnestics Society Conference
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• 2005.12a
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• pp.176-177
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• 2005

• Proceedings of the Korean Magnestics Society Conference
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• 2005.12a
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• pp.130-131
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• 2005

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.839-842
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• 2004

We present a fast-switching electro-optical device based on flexoelectro-optic effect in short pitch cholesterics oriented in uniform lying helix texture. The device has two operating modes: amplitude and phase modulation mode. The amplitude modulation mode is a fast in-plane switching of the device optic axis that enables to achieve a high percent of modulation of the transmitted light intensity whereas the phase mode gives a continuous change of the refractive index and thus of the phase shift of the transmitted light. By using a small concentration of diacrylate monomer and selecting the illumination conditions we have been able to create a inhomogeneous polymeric network mostly localized at both substrate surfaces and stabilize the two switching modes.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.1023-1026
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• 2007

Highly efficient inverted bottom emission organic light emitting device (IBOLED) with a structure of ITO/EIL/Alq3/NPB/WO3/Al was investigated. To enhance electron injection from ITO cathode to Alq3 EML layer, we introduced ultra thin Al layer and Liq layer between ITO and Alq3. The device characteristics showed tune on voltage of 4.5V, the maximum luminance of 21100 Cd/m2 and current efficiencies of 3.56 Cd/A.

• Progress in Superconductivity and Cryogenics
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• v.24 no.2
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• pp.23-26
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• 2022

A lossless transport of an arbitrary waveform in a frequency range of 10⁶-10⁹ Hz through a conduction channel in a cryogenic temperature is of importance for a high-speed operation of quantum device. However, it is hard to use a commercial oscilloscope to directly detect the waveform travelling in a device located in a cryogenic system. Here, we developed a cryogenic voltage sampling technique by using a Schottky barrier gate prepared on a surface of a GaAs/AlGaAs device, which revealed that an incident rectangle waveform can transport through a 1 mm long two-dimensional conduction channel without waveform deformation up to 20 MHz, while further study is needed to increase the detection frequency.