• Title/Summary/Keyword: device drive

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Development of Smart driving monitoring device for Personal Mobility through Confusion Matrix verification

  • Han, Ju-Wan;Park, Seong-Hyun;Sim, Chae-Hyeon;Whang, Ju-Won
    • Journal of the Korea Society of Computer and Information
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    • v.27 no.2
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    • pp.61-69
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    • 2022
  • As the delivery industry grew around the restaurant industry along with the COVID-19 situation, the number of delivery workers increased significantly. Along with that, new forms of delivery using personal mobility (PM) also emerged and two-wheeled or PM-related accidents are steadily increasing. This study manufactures a PM's driving analysis device to establish a safe delivery monitoring environment. This system was constructed to process data collected from the driving analysis device and through a cloud server, which would recognize and record special situations (acceleration/deceleration, speed bump) that could occur during the PM's driving situation. As a result, the angular speed, acceleration, and geomagnetic values collected from the IMU in the device were able to determine whether to drive, drive on the sidewalk, and drive on the speed bump. This technology was able to achieve approximately 1600 times more driving information storage efficiency than conventional image-based recording devices.

Modifications of RC/TS(Resonant Column and Torsional Shear) Device for the Large Strain (대변형율 시험을 위한 공진주 비틂전단 시험기의 수정)

  • Bae, Yoon-Shin
    • International Journal of Highway Engineering
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    • v.10 no.3
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    • pp.1-10
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    • 2008
  • Conventional RC/TS(resonant column and torsional shear) device usesa specimen with an aspect ratio(height-to-diameter) of 2:1 and this generates a maximum shear strain in the sample of about 1.5% at the maximum rotation of the drives system. The objective of this study is to modify RC/TS device to generate higher strain amplitude. The modifications include a new base pedestal to overcome the limitations in the travel of the drive system and modification of coil wiring to increase torque. The effects of the new coil wire on torque in the electro magnetic drive system were evaluated and the application of modified device was illustrated using sand soil.

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ARM Multimedia data retrieval in low power mobile disk drive (저전력 모바일 드라이브에서의 멀티미디어 데이터 재생)

  • Park, Jung-Wan;Won, You-Jip
    • Proceedings of the Korean Information Science Society Conference
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    • 2002.04a
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    • pp.676-678
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    • 2002
  • In this work, we present the novel scheduling algorithm of the multimedia data retrieval for the mobile disk drive. Our algorithm is focused on minimizing the power consumption involved in data retrieval from the local disk drive. The prime commodity in mobile devices is the electricity. Strict restriction on power consumption requirement of the mobile device put unique demand in designing of its hardware and software components. State of the art disk based storage subsystem becomes small enough to be embedded in handhold devices. It delivers abundant storage capacity and portability. However, it is never be trivial to integrate small hard disk or optical disk drive in handhold devices due to its excessive power consumption. Our algorithm ARM in this article generates the optimal schedule of retrieving data blocks from the mobile disk drive while guaranteeing continuous playback of multimedia data.

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A Design of Position Control System of Switched Reluctance Motor (스위치드 릴럭턴스 전동기의 위치제어 시스템 설계)

  • Kim Min-Huei;Baik Won-Sik;Kim Nam-Hun;Choi Kyeong-Ho;Kim Dong-Hee
    • Proceedings of the KIPE Conference
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    • 2004.07a
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    • pp.249-253
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    • 2004
  • This paper presents an implementation of position control system of Switched Reluctance Motor (SRM) using digital hysteresis controller. Although SRM possess several advantages including simple structure and high efficiency, the control drive system using power semiconductor device is required to drive this motor. The control drive system increases overall system cost. To overcome this problem and increase the application of SRM, it is needed to develope the servo drive system of SRM. So, the position control system of 1 Hp SRM is developed and evaluated by adaptive switching angle control. The position/speed response characteristics and voltage/current waveforms are presented to prove the capability of SRM for a servo drive application. Moreover, digital hysteresis current controller is developed and evaluated by experimental testing for the purpose of system developmental cost reduction.

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Design and Implementation of iSCSI Protocol Based Virtual USB Drive for Mobile Devices (모바일 장치를 위한 iSCSI 프로토콜 기반의 가상 USB 드라이브 설계 및 구현)

  • Choi, Jae-Hyun;Nam, Young Jin;Kim, JongWan
    • IEMEK Journal of Embedded Systems and Applications
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    • v.5 no.4
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    • pp.175-184
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    • 2010
  • This paper designs a virtual USB drive for mobile devices which gives an illusion of a traditional USB flash memory drive and provides capacity-free storage space over IP network. The virtual USB drive operating with a S3C2410 hardware platform and embedded linux consists of USB device driver, an iSCSI-enabled network stack, and a seamless USB/iSCSI tunneling module. For performance enhancement, it additionally provides a kernel-level seamless USB/iSCSI tunneling module and data sharing with symbol references among kernel modules. Experiments reveal that the kernel-level implementation can improve the I/O performance up to 8 percentage, as compared with the user-level implementation.

The Characteristics of High Speed Feed Drive System using High Lean Screw (High Lead Ball Screw를 사용한 고속이송계의 특성)

  • 고해주;박성호;정윤교
    • Transactions of the Korean Society of Machine Tool Engineers
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    • v.10 no.4
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    • pp.97-103
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    • 2001
  • The study on the high-speed machine tool is very important for the improvement of productivity since it can shortens cutting and non-cutting time. Especially, high speed of feed drive system is the major research field. In the industries of the advanced countries, the feed drive systems at the speed of 60 m/min have been already developed based on the high lead ball screws. In this study, a high speed feed drive system at the speed of 60 m/ min has been developed, and its movements characteris-tics are investigated. As the movement characteristics, positioning accuracy, angular accuracy, straightness and micro step-response are measured. Thermal characteristics of the system is also discussed. For measuring the movement characteris-tics, a laser interferometer, a memory-based Hi-coder and a cooling device are used. The experimental results confirm that the movement characteristics and the thermal behavior of the system are satisfactory in the aspect of accuracy and stability.

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The Study on the Embedded Active Device for Ka-Band using the Component Embedding Process (부품 내장 공정을 이용한 5G용 내장형 능동소자에 관한 연구)

  • Jung, Jae-Woong;Park, Se-Hoon;Ryu, Jong-In
    • Journal of the Microelectronics and Packaging Society
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    • v.28 no.3
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    • pp.1-7
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    • 2021
  • In this paper, by embedding a bare-die chip-type drive amplifier into the PCB composed of ABF and FR-4, it implements an embedded active device that can be applied in 28 GHz band modules. The ABF has a dielectric constant of 3.2 and a dielectric loss of 0.016. The FR-4 where the drive amplifier is embedded has a dielectric constant of 3.5 and a dielectric loss of 0.02. The proposed embedded module is processed into two structures, and S-parameter properties are confirmed with measurements. The two process structures are an embedding structure of face-up and an embedding structure of face-down. The fabricated module is measured on a designed test board using Taconic's TLY-5A(dielectric constant : 2.17, dielectric loss : 0.0002). The PCB which embedded into the face-down expected better gain performance due to shorter interconnection-line from the RF pad of the Bear-die chip to the pattern of formed layer. But it is verified that the ground at the bottom of the bear-die chip is grounded Through via, resulting in an oscillation. On the other hand, the face-up structure has a stable gain characteristic of more than 10 dB from 25 GHz to 30 GHz, with a gain of 12.32 dB at the center frequency of 28 GHz. The output characteristics of module embedded into the face-up structure are measured using signal generator and spectrum analyzer. When the input power (Pin) of the signal generator was applied from -10 dBm to 20 dBm, the gain compression point (P1dB) of the embedded module was 20.38 dB. Ultimately, the bare-die chip used in this paper was verified through measurement that the oscillation is improved according to the grounding methods when embedding in a PCB. Thus, the module embedded into the face-up structure will be able to be properly used for communication modules in millimeter wave bands.

Threshold Voltage Control through Layer Doping of Double Gate MOSFETs

  • Joseph, Saji;George, James T.;Mathew, Vincent
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.10 no.3
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    • pp.240-250
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    • 2010
  • Double Gate MOSFETs (DG MOSFETs) with doping in one or two thin layers of an otherwise intrinsic channel are simulated to obtain the transport characteristics, threshold voltage and leakage current. Two different device structures- one with doping on two layers near the top and bottom oxide layers and another with doping on a single layer at the centre- are simulated and the variation of device parameters with a change in doping concentration and doping layer thickness is studied. It is observed that an n-doped layer in the channel reduces the threshold voltage and increases the drive current, when compared with a device of undoped channel. The reduction in the threshold voltage and increase in the drain current are found to increase with the thickness and the level of doping of the layer. The leakage current is larger than that of an undoped channel, but less than that of a uniformly doped channel. For a channel with p-doped layer, the threshold voltage increases with the level of doping and the thickness of the layer, accompanied with a reduction in drain current. The devices with doped middle layers and doped gate layers show almost identical behavior, apart from the slight difference in the drive current. The doping level and the thickness of the layers can be used as a tool to adjust the threshold voltage of the device indicating the possibility of easy fabrication of ICs having FETs of different threshold voltages, and the rest of the channel, being intrinsic having high mobility, serves to maintain high drive current in comparison with a fully doped channel.