• Title/Summary/Keyword: device degradation

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High Temperature Characteristics of SOI BMFET (SOI BMFET 의 고온 특성 분석)

  • Lim, Moo-Sup;Kim, Seoung-Dong;Han, Min-Koo;Choi, Yearn-Ik
    • Proceedings of the KIEE Conference
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    • 1996.07c
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    • pp.1579-1581
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    • 1996
  • The high temperature characteristics of SOI BMFET are analyzed by the numerical simulation and compared with MOS-gated SOI power devices at high temperatures. The proposed SOI BMFET combines bipolar operation in the on-state with unipolar FET operation in the off-state, so that it may be suitable for high temperature operation without any significant degradation of performance such as the leakage current and blocking capability. The simulation results show that SOI BMFET with a higher doped n-resurf layer is the most promising device far high temperature application as compared with MOS-gated SOI power devices, exhibiting the low on-state voltage drop as well as the excellent forward blocking capability at high temperature.

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Investigations of Latch-up characteristics of CMOS well structure with STI technology (STI 기술을 채용한 CMOS well 구조에서의 Latch-up 특성 평가)

  • Kim, In-Soo;Kim, Chang-Duk;Kim, Jong-Chul;Kim, Jong-Kwan;Sung, Yung-Kwon
    • Proceedings of the KIEE Conference
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    • 1997.11a
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    • pp.339-341
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    • 1997
  • From this first studies, We have investigated the latch-up characteristics of various CMOS well structures possible with high energy ion implantation processes. In this study, we also investigated those of STI(Shallow Trench Isolation} structures with varing n+/p+ spacing and the depth of trench. STI structure is formed by T-SUPREM4 process simulator, and then latch-up simulations for each case were performed by MEDICI device simulator for latch-up immunity improvement. STI is very effective to preventing the degradation of latch-up characteristics as the n+/p+ spacing is reduced. These studies will allow us to evaluate each technology and suggest guidelines for the optimization of latch-up susceptibility.

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Outdoor Weathering Test for used Construction Urethane Type Sealants (건축용 우레탄 실란트의 옥외폭로시험평가 방법 개발)

  • Lee, Sang Kook;Bae, Kee Sun
    • Proceedings of the Korean Institute of Building Construction Conference
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    • 2017.05a
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    • pp.69-70
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    • 2017
  • In Korea, silicone type sealant is widely used for construction site. Before the silicone type, urethane type is one of the main type sealants. However, the weathering property is less than the silicone type, the urethane type is replace by the silicone one. Still the urethane type is used for the inside of the buildings for the perimeter of the window. The silicone type sealants are better in weathering property than those of the urethane type sealants. Except the weathering property urethane type sealant has its own advantage like movement property, low cost and so forth. There are many research results for the outdoor weathering of the sealants, but in Korea there are no results for the outdoor weathering for construction sealants. This research is focused on the outdoor weathering of the urethane sealants, how to measure the degradation, and compare the products which used in Korea. The outdoor weathering test is usually time consuming, thus we designed specialized device for accelerating the result.

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Statistical Analysis of wear out in electrically stressed Laser Assisted PECVD SiN Films (Laser Assisted PECVD SiN막의 경시적 열화에 관한 시간 의존성의 통계적 고찰)

  • Kim, Chun-Sub;Kim, Yong-Woo;Yi, Seung-Hwan;Sung, Yung-Kwon
    • Proceedings of the KIEE Conference
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    • 1990.07a
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    • pp.177-179
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    • 1990
  • Recently, it is reported that the behaviour of PECVD under high electric field and current condition has a major effect on MNS device degradation. In this paper, we evaluated the breakdown and TDDB characteristics of Laser assisted PECVD SiN films which is introduced new deposited method. And also, long term insulator breakdown reliability is described by examing time dependent dielectric breakdown under positive voltage. Failure tines against electric field are examined and acceleration factors are obtained for each case. From these data, breakdown wearout limitation for Laser Assisted PECVD SiN film can be characterized.

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Helical coil springs property in Cu-Zn-Al shape memory alloy (Cu-Zn-Al 형상기억합금의 코일스프링 특성)

  • Kwon, Hee-Kyung;Choi, Chang-Soo;Chung, In-Sang
    • Journal of the Korean Society for Heat Treatment
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    • v.9 no.3
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    • pp.187-197
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    • 1996
  • In this study, the properties of coil spring made by Cu-Zn-Al and B added shape memory alloys are investigated. The measurement of recovery displacement and energy with increasing weight, and thermocycling properties have been studied using displacement measuring device. Transformation temperature and phase change by thermocycling have been also investigated by DSC and X-ray diffractometer. Grain size of the alloy is refined from 1.2mm to $400{\mu}m$ by 0.06wt% of B addition. The maximum recovery energy of the coil spring for B added alloy is larger than that of no B added alloy, it is because of grain refinement. And shape memory ability of the coil spring by thermocycling decrease with increasing thermocycling after thermocycle under load. The degradation of shape memory properties of coil spring by thermocycling is improved by B addition.

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Evaluation of Performance and Service Life of Low Pressure LPG Regulators for Home Use

  • Kim Young-Gyu;Cho Seok-Beom;Kim Pil-Jong;Kwon Boo-Kil
    • Journal of Mechanical Science and Technology
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    • v.20 no.3
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    • pp.329-334
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    • 2006
  • This paper presents the evaluation of LPG (Liquefied petroleum gas) regulators for home use. For the evaluation, several properties of the regulators were experimentally analyzed, such as the operation of safety device, the adjusting and lock-up pressure, the adjusting spring and the diaphragm, with respect to the used time of the regulators. Experimental results showed that the initial operation performances of regulators were degraded with increase of the service time and also showed that the degradation of the performance and material property could become serious after about six-year-use of the regulators.

Block Copolymer (PS-b-PMMA) Etching Using Cl2/Ar Gas Mixture in Neutral Beam System (Cl2/Ar gas mixture 중성빔을 이용한 블록공중합체 식각 연구)

  • Yun, Deok-Hyeon;Kim, Gyeong-Nam;Seong, Da-In;Park, Jin-U;Kim, Hwa-Seong;Yeom, Geun-Yeong
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2015.11a
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    • pp.332-332
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    • 2015
  • Block Copolymer lithography는 deep nano-scale device 제작을 위한 기존의 top-down방식의 photo-lithography를 대체할만한 기술로 많은 연구가 진행되고 있다. polystyrene(PS)/poly-methyl methacrylate (PMMA)로 구성된 BCP의 nano-scale PS mask는 일반적인 플라즈마 공정에 쉽게 damage를 입는다. 중성빔 식각을 이용하여 식각 공정 중 발생하는 BCP의 degradation을 감소시키고, 비등방성 식각 profile을 얻을 수 있으며 sidewall roughness(SWR)와 sidewall angle(SWA)가 향상되는 것을 알 수 있었다.

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Reliability Evaluation for Hinge of Folder Devices Using ESPI

  • Kyungyoung Jhang;Minkwan Hyun;Lee, Taehun;Seokwon Chang
    • International Journal of Reliability and Applications
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    • v.5 no.1
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    • pp.15-24
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    • 2004
  • Folder type electronic devices have hinge to support the rotational motion of folder. This hinge is stressed by the rotational inertia moment of folder at the maximum open limit position of folder. This stress is repeated whenever the folder is open, and it is a cause of hinge fracture. In this paper, the reliability evaluation for the hinge fracture in the folder type cellular phone is discussed. For this, the durability testing machine using crank-rocker mechanism is developed to evaluate the life cycle of the hinge, and the degradation after repetitions of opening and shutting is evaluated from the deformation around the hinge, where the deformation is measured by ESPI (electronic speckle pattern interferometer). Experimental results showed that ESPI was able to measure the deformation of hinge precisely, so we could monitor the change of deformation around the hinge as the repetition number of folder open is increased.

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The Characteristics of Computer-Generated Holographic Optical Low-Pass Filter (컴퓨터로 설계한 홀로그램 광 저대역 필터의 특성 분석)

  • 김인길;고춘수;임성우;오용호;이재철
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.12S
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    • pp.1261-1267
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    • 2003
  • Since the grating optical low-pass fillet degrades the resolution of images, we developed a hologram optical low-pass filter that show low degradation of the image and studied its characteristics. We designed the hologram that divides input beam into circular shaped 21 beams with a Monte-Carlo based hologram generation program and calculated its MTE characteristics to compare it with that of a grating filter. The hologram was manufactured through the optical lithography process and attached to a digital imaging device (Zoran 732212) for measurement. The moirfiltering is compared with zone plate images and the resolution loss is measured with USAF resolution chart. The hologram optical low-pass filter showed better characteristics in both moly filtering and resolution.

Preparation and Characteristics of Organic Electroluminescence Devices using Multilayer Structure with Carrier Transport Materials (다층막 구조를 이용한 유기 EL소자의 제작과 특성에 관한 연구)

  • Lee, Sang-Youn;Kim, Young-Kwan;Kim, Jung-Soo
    • Proceedings of the KIEE Conference
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    • 1997.07d
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    • pp.1563-1565
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    • 1997
  • Electroluminescence(EL)devices based on organic thin layers have attracted lot of interests because of their possible application as large-area light-emitting display. One of the problems of such devices is lifetime of the cell, where the degradation of the cell is partially due to the crystalliyzation of organic layers. In large part, this problem can be solved by using a multilayer device structure prepared by vapor deposition technique. In this study, blue lightemitting multilayer organic electroluminescence devices were fabricated using Poly (9-vinyl-carbazole) (PVK) and 2-(4'-tert-butylpheny])-5-(4"-bis-phenyl)1,3,4-oxadiazole (PBD) as hole trasport and electron transport material, respectively, where tris(8-hydroxyquinolinate) aluminum (Alq3) was used as a luminescenct material. A cell structure of glass substrate/indume-tin-oxide(ITO)/PVK/$Alq_3$/PBD/Mg:In was employed.

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