• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.5
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• pp.507-511
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• 2024

Various process modifications have been used to minimize SiO₂ gate oxide aging in metal-oxide-semiconductor field-effect transistors (MOSFETs). In particular, post-metallization annealing (PMA) with a deuterium ambient can effectively eliminate both bulk traps and interface traps in the gate oxide. However, even with the use of PMA, it remains difficult to prevent high levels of radiation-induced gate oxide damage such as total ionizing dose (TID) during long-term missions. In this context, additional low-temperature heat treatment (LTHT) is proposed to recover from radiation-induced damage. Positive traps in the damaged gate oxide can be neutralized using LTHT, thereby prolonging device reliability in harsh radioactive environments.

• Journal of the Korean Chemical Society
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• v.31 no.2
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• pp.197-202
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• 1987

Sigmatropic rearrangement of cis and trans-2-methyl-N-phenyl-1,3-oxathiolane-2-acetamide (b) and (c) gave unisolable sulfenic acids (d) and (f), respectively. These sulfenic acids were confirmed by deuterium exchange reactions involving 2-methylene and 2-methyl groups. The reactions also showed that no isomerization between the cis and trans sulfoxides (b) and (c) occurred under neutral conditions. However, the isomerization took place in the presence of acid catalyst. Stereospecific recyclization of sulfenic acids to the sulfoxides is attributable to possible hydrogen bonding between sulfenyl oxygen and NH proton or it arises from the geometrical requirements of the reacting bond and atoms in the reverse sigmatropic rearrangement. In the oxidation of 1, 3-oxathiolane, cis sulfoxide (b) could be obtained selectively in high yield by using $H_2O_2$-benzene seleninic acid.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.355-355
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• 2010

We studied the dependence of the performance of schottky barrier metal-oxide-field effect transistors(SB MOSFETs) on the work function of source/drain metals. A strong impact of the various work functions and the light wavelengths on the transistor characteristics is found and explained using experimental data. We used an insulator of a high thickness (100nm) and back gate issues in SOI substrate, subthreshold swing was measured to 300~400[mV/dec] comparing with a ideal subthreshold swing of 60[mV/dec]. Excellent characteristics of Al/Si was demonstrated higher on/off current ratios of ${\sim}10^7$ than others. In addition, extensive photoresponse analysis has been performed using halogen and deuterium light sources(200<$\lambda$<2000nm).

• Nuclear Engineering and Technology
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• v.53 no.8
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• pp.2570-2575
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• 2021

The exchange behaviors of hydrogen isotopes between protonated lithium metal compounds and deuterated water or tritiated water were investigated. The various protonated lithium metal compounds were prepared by acid treatment of lithium metal compounds with different crystal structures and metal compositions. The protonated lithium metal compounds could more effectively reduce the deuterium concentration in water compared with the corresponding pristine lithium metal compounds. The H⁺ in the protonated lithium metal compounds was speculated to be more readily exchangeable with hydrons in the aqueous solution compared with Li⁺ in the pristine lithium metal compounds, and the exchanged heavier isotopes were speculated to be more stably retained in the crystal structure compared with the light protons. When the tritiated water (157.7 kBq/kg) was reacted with the protonated lithium metal compounds, the protonated lithium manganese nickel cobalt oxide was found to adsorb and retain twice as much tritium (163.9 Bq/g) as the protonated lithium manganese oxide (69.9 Bq/g) and the protonated lithium cobalt oxide (75.1 Bq/g) in the equilibrium state.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.71-72
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• 1998

반도체 집적 공정의 발달로 차세대 소자용으로 30 A 이하의 극 박막 Si02 절연막이 요구되고 있으며, 현재 제품으로 50-70 A 두께의 절연막을 사용한 것이 발표되고 있다. 절연막의 두께가 앓아질수록 많은 문제가 발생할 수 있는데 그 예로 절연막의 breakdo때둥에 의한 신뢰성 특성의 악화, 절연막올 통한 direct tunneling leakage current, boron풍의 dopant 침투로 인한 소자 특성 ( (Threshold Voltage)의 불안, 전기적 stress하에서의 leakage current증가와 c charge-trap 및 피terface s쩌.te의 생성으로 인한 소자 특성의 변화 둥으로 요약 된다. 절연막의 특성올 개선하기 위해 여러 가지 새로운 공정들이 제안되었다. 그 예로, Nitrogen올 Si/Si02 계면에 doping하여 절연막의 특성을 개선하는 방법 으로 고온 열처 리 를 NH3, N20, NO 분위 기 에서 실시 하거 나, polysilicon 또는 s silicon 기판에 nitrogen올 이온 주입하여 열처리 하는 방법, 그리고 Plasma분 위기에서 Nitrogen 함유 Gas를 이용하여 nitrogen을 doping시키는 방법 둥이 연구되고 있다. 또한 Oxide cleaning 후 상온에서 성장되는 oxide를 최소화 하여 절연막의 특성올 개선하기 위하여 LOAD-LOCK을 이용하는 방법, C뼈피ng 공정의 개선올 통한 contamination 감소와 silicon surface roughness 감소 로 oxide 신뢰성올 개선하는 방법 둥이 있다. 구조적 인 측면 에 서 는 Polysilicon 의 g없n size 를 최 적 화하여 OxideIPolysilicon 의 계면 특성올 개선하는 연구와 Isolation및 Gate ETCH공정이 절연막의 특성에 미 치 는 영 향도 많이 연구되 고 있다 .. Plasma damage 가 Oxide 에 미 치 는 효과 를 제어하는 방법과 Deuterium열처리 퉁올 이용하여 Hot electron Stress하에서 의 MOS 소자의 Si/Si02 계면의 신뢰성을 개선하고 있다. 또한 극 박막 전연막의 신뢰성 특성올 통계적 분석올 통하여 사용 가능한 수명 올 예 측 하는 방법 과 Direct Tunneling Leakage current 를 고려 한 허 용 가농 한 동작 전 압 예측 및 Stress Induced Leakage Current 둥에 관해서 도 최 근 활발 한 연구가 진행되고 있다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.348-348
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• 2010

Nanostructures have great potential in various devices due to the their promising electronic and optical properties. Nano-patterned the front surface of a solar cell generally results in improved performance, mostly due to an increase in the short-circuit current by the incident photons strike the cell surface at an angle. In this work, we investigate AFM-assisted nano-patterned field effect transistors (FETs) with vairous silicon oxide distance value D, from ${\sim}0.5{\mu}m$ to $1{\mu}m$. Also, we compared the electro-optical characteristics of the patterned FETs and the non-patterned FETs (reference device) based on both 2-dimensional simulation and experimental results for the wavelength from 100nm to 900nm. In addition, we report electric characteristics for illuminated surface in schottky barrier field effect transistors (SB-FETs).

• Korean Journal of Environmental Agriculture
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• v.12 no.2
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• pp.169-175
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• 1993

O-Ethyl S-methyl ethylphosphonothioate was studied for chemical and metabolic oxidation using $^{31}P-NMR$ analyses. The chemical shifts of O-ethyl ethylphosphonic acid (2) which is one of major metabolites were changed with the variation of oxidation systems. $^{31}P-NMR$ chemical shifts of 2 were observed at 40.15ppm from oxidaton by MCPBA, 30.98 ppm by MMPP, 29.31 ppm from in vitro rat liver microsomal oxidation, and 29.10 ppm from in vivo metabolism in houseflies. $^{31}P-NMR$ chemical shift of 2 in two different solvents such as deutero-chloroform and deuterium oxide were observed at 30.70 ppm and 40.15 ppm, respectively. And those of the metabolites were also observed at around 30 ppm under the conditions of pH 3, 5.6 and 14 and 47.91 ppm under pH 1 which is a strong acidic condition. It could be explained that the ionized form of 2 should have greater shielding effect on phosphorus atom and hence shows upfield chemical shift in polar solvents and alkaline conditions. On the other hand, a protonated form under organic solvents and the strong acidic condition should have less shielding effect than its ionized form, shifting the peak downfield.

• Journal of Photoscience
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• v.3 no.2
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• pp.77-83
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• 1996

Photosensitization via the singlet oxygen ($^1O_2$) mechanism by the binuclear iron-sulfur center, denoted as [2Fe-2S], was investigated, using a highly purified ferredoxin (Fd) preparation from spinach leaves. Since the apoprotein of Fd contains a good number of amino acid residues that are readily reactive with $^1O_2$ and thus interfere with the detection of $^1O_2$ generated from [2Fe-2S], we attempted to deprive the $^1O_2$-sensitive residues of their $^1O_2$-scavenging capacity as much as possible by treating Fd with rose bengal plus 550 nm monochromatic light and thereby photooxidatively degrading these residues. The photochemically modified Fd was found to keep the structural integrity of its Fe-S group virtually unaffected by the treatment. By employing chemical trap method for measurement and examining the kinetic effects of azide and deuterium oxide on the reactions of $^1O_2$ with various trap compounds, we were able to demonstrate that [2Fe-2S] indeed acts as a photosensitizer via $^1O_2$. Further, the minimum quantum yield of $^1O_2$ production by [2Fe-2S] was estimated to be 0.0047.

• Journal of the Korean Magnetic Resonance Society
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• v.6 no.1
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• pp.20-37
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• 2002

MnAPSO-34 and Mn-impregnated SAPO-34(Mn-SAPO-34) sample were prepared with various manganese contents and studied by electron spin resonance(ESR) and electron spin echo modulation(ESEM). Electron spin echo modulation analysis of 0.07mo1 ％ Mn(relative to p) in MnAPSO-34 with adsorbed D$_{2}$O shows two deuteriums at 0.26 nm and two at 0.36 nm from Mn. This suggests that two waters hydrate an MnO$_{4}$ configuration with a D-O bond orientation for the waters as expect for a negatively charged site at low manganese content (0.1 mol％), the ESR spectra of MnAPSO-34 and MnH-SAPO-34 exhibit the same parameters(g 2.01 and A 89 G), but the spectra obtained from MnAPSO-34 samples are better resolved. The decomposition temperature of as-synthesized MnAPSO-34 were in the range of 200-600 $^{\circ}C$ of the morpholine which is 12 $^{\circ}C$ higher than that in as-synthesized MnH-SAPO-34. Infrared spectra showed that the position of a band at 3450 $cm^{-1}$ / shifted about 15 $cm^{-1}$ / toward higher energy in MnAPSO-34 versus MnH-SAPO-34. The modulation depth of the two-pulse ESE of MnAPSO-34 with adsorbed D$_{2}$O is deeper than that of MnH-SAPO-34 with adsorbed D$_{2}$O. Three-pulse ESEM of MnAPSO-34 and MnH-SAPO-34 with adsorbed deuterium oxide shows that the local environments of manganese in the hydrated samples are different, suggesting that Mn(II) is framework substituted in MnAPSO-34 since it obviously occupies an extraframework position in MnH-SAPO-34.

• Journal of Radiation Protection and Research
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• v.32 no.3
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• pp.111-115
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• 2007

A deuterium oxide leakage accident occurred on October 4, 1999, at nuclear power plant in Korea. The concentration of tritium in air increased and 22 workers were exposed by tritium at that time. It is well known that tritium causes internal exposure. Therefore, we examined complete blood cell count, physical and biological dosimetry fur 13 workers among whole 22 workers to check the health effect and to evaluate the dose estimation of tritium exposure. The leukocyte count test, one of general blood test, was normal. The estimated doses were 0 - 4.44 mSv by physical dosimetry and 0-37 mGy by biological dosimetry. This dose does not exceed radiation dose limit, and the clinical symptoms of the exposed workers were not shown. The consistency between clinical sign and estimated dose means that physical and biological dosimetry were very useful especially in accident evaluation.