한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2010년도 하계학술대회 논문집
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- Pages.348-348
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- 2010
쇼트키 장벽 트랜지스터의 빛 조사에 따른 전기적 특성 연구
Electric characteristics of Schottky barrier Field Effect Transistors with Halogen and Deuterium lamp
- Hwang, Min-Young (Kwangwoon University) ;
- Koo, Sang-Mo (Kwangwoon University)
- 발행 : 2010.06.16
초록
Nanostructures have great potential in various devices due to the their promising electronic and optical properties. Nano-patterned the front surface of a solar cell generally results in improved performance, mostly due to an increase in the short-circuit current by the incident photons strike the cell surface at an angle. In this work, we investigate AFM-assisted nano-patterned field effect transistors (FETs) with vairous silicon oxide distance value D, from