• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1899-1901
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• 2001

본 논문에서는 3차원 feed horn 안테나를 볼로미터에 결합함으로써 감지도(Detectivity)를 향상시킨 비가시광 영상 감지 소자를 제안하였다. Feed horn 안테나의 우수한 지향성(Directivity)를 통해서 주위의 잡음 성분을 제거함으로써 감지도의 향상을 확인할 수 있었다. 안테나와 볼로미터와의 결합 손실을 줄이기 위해서 볼로미터의 흡수층의 모양을 원형의 형태로 하였으며 크기도 안테나 폭과 일치를 시켰다. 또한 열적 고립 구조를 만들기 위한 지지 다리의 모양도 원형의 형태로 하여서 전체 길이를 증가 시켰으며 이로 인해 열전도도(Thermal conductance)를 $4.65{\times}10^{-8}$[W/K]까지 낮출 수 있었 다. 설계된 소자의 감지도는 $2.37{\times}10^{9}$[$cm\sqrt{Hz}/W$]을 나타내었으며 안테나 결합을 통한 감지도의 향상을 확인 할 수 있었다. 볼로미터의 제작은 MEMS 기술을 이용한 표면미세가공(Surface micromachining)법으로 열적 고립 구조체를 제작할 수 있으며 3차원 feed horn안테나는 SU-8이라는 음성 감광제를 경사회전노광시켜서 제작할 수 있다.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.1121-1124
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• 2003

PZT(30/70) thick film was fabricated by using 1,3 propanediol-based sol-gel method. Prepared film of pyroelectric property was investigated by Dynamic method of modulation frequency dependence. Pyroelectric coefficient was obtained about 5.0$\times$10$^{-8}$ C/$\textrm{cm}^2$.K. The figure of merits for voltage responsivity and specific detectivity were 3.4$\times$10$^{-11}$ C.cm/J and 5.9$\times$10$^{-9}$ C.cm/J, respectively, because of relative high-dielectric constant and high-pyroelectric coefficient. Voltage responsivity was increased at low modulation frequency and it was decreased at high modulation frequency. Voltage responsivity was maximum 1.84 V/W at 10 Hz. As Johnson noise is dominant, Noise voltage was increased nearly proportional to f$^{-1}$ 2/. Noise equivalent power and specific detectivity were 2.83$\times$10$^{-7}$ W/Hz$^{1}$2/ and 3.13$\times$10$^{5}$ cm.Hz$^{1}$2//W the same frequency at 80 Hz, respectively.

• Journal of the Institute of Convergence Signal Processing
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• v.3 no.4
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• pp.74-78
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• 2002

For human detecting pyroelectric infrared sensor system using more than 2 sensor devices. By new top and bottom electrode design, 1 sensor can sensing human instead of using 2 sensor system. The poled P(VDF/TrFE) film used for sensor pyroelectric materials. The fabricated sensors NEP (noise equivalent power) and specific detectivity D$^*$ of the device were 9.62 $\times$ 10$10^5$ V/W, 3.95 $\times$ 10$10^-175$ W and 5.06 $\times$ 10$10^5$W under emission energy of 13 ${\mu}W/cm^2$ respectively and It's result is almost same result that using more than 2 sensor system for human detecting.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.6
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• pp.9-15
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• 2004

PZT(30/70) thick film was fabricated by using 1,3 propanediol-based sol-gel method. Prepared film of pyroelectric property was investigated by Dynamic method of modulation frequency dependence. Pyroelectric coefficient was obtained about $5.0{\times}10^{-8}\;C/cm^2{\cdot}K$. The figure of merits for voltage responsively and specific detectivity were $3.4{\times}10^{-11}\;C{\cdot}cm/J$ and $5.9{\times}10^{-9}\;C{\cdot}cm/J$, respectively, because of relative high-dielectric constant and high-pyroelectric coefficient. Voltage responsively was increased at low modulation frequency and it was decreased at high modulation frequency. Voltage responsively was maximum 1.84 V/W at 10Hz. As Johnson noise is dominant, Noise voltage was increased nearly proportional to $f^{-1/2}$. Noise equivalent power and specific detectivity were $2.83{\times}10^{-7}\;W/Hz^{1/2}$ and 3.13{\times}10^5\;cm{\cdot}Hz^{1/2}/W$ the same frequency at 80Hz, respectively.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.12
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• pp.1008-1015
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• 2002

The fabricated La-modified lead titanate (PLT) thin film without poling treatment was investigated for modulation frequency dependence of pyroelectric properties by the dynamic method. $Pb_{l-x}La_{x}Ti_{l-x/4}O_3$(x=0.1) (PLT(10)) thin film haying 10 mol% La content was deposited on a Pt/$TiO_{x}$/$SiO_2$/Si substrate by sol-gel method. The PLT(10) thin film exhibits a relatively excellent dielectric property. The pyroelectric coefficient (p) of the PLT(10) thin film is 6.6 x $10^{-9}C$$textrm{cm}^2$$.$K without frequency dependence. The figure of merits for the voltage responsivity and specific detectivity are 1.03 x $10^{-11}C$.cm/J and 1.46 x $10^{-10}C$.cm/J, respectively The PLT(10) thin film has voltage responsivity (RV) of 5.IS V/W at 8 Hz. Noise equivalent power (NEP) and specific detectivity ($D^{*}$) of the PLT(10) thin film are 9.93 x $10^{-8}$W/$Hz^{1/2}$ and 1.81 x $10^{6}$cm.$Hz^{1/2}$/W at the same frequency of 100 Hz,, respectively The results means that PLT thin film having 10 mol% La content is suitable for the sensing materials of pyroelectric IR sensors.

• Journal of Sensor Science and Technology
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• v.6 no.1
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• pp.6-15
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• 1997

This paper presents the multi-objective optimal design of thermopile sensor having beam or membrane structure. The thermopile sensor is composed of $Si_{3}N_{4}/SiO_{2}$ dielectric membrane, Al-polysilicon thermocouples and $RuO_{2}$ thin film for black body. The sensing method is based on the Seebeck effect which is originated from the temperature difference of the two positions, black body and silicon rim. The objective functions of the presented design are sensitivity, detectivity and thermal time constant. The modelling of the sensor is proposed including the package. The multi-objective optimization technique is applied to the design of the sensor not only inspecting the modelling equation but also simulating mathematical programming method. Especially, fuzzy optimization technique is adapted to get the optimal solution which enables the designer to reach the more practical solution. The design constraint of the voltage output originated from the change of the environmental temperature is included for practical use.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.6
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• pp.297-303
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• 2003

Mn-Ni-Co type thin films were prepared at various conditions by a rf magnetron sputtering system. At the condition. or substrate temperature of $300^{\circ}C$ and $Ar/O_2$= 10/0, a cubic spinel phase was obtained. When oxygen was included in process gas, a cubic spinel phase was not formed even after the thermal annealing at $900^{\circ}C$. The thermistor thin film had no other elements except Mn, Ni and Co. The infrared reflection spectra of the thermistor thin films showed that the films had somewhat high reflectance for incoming infrared ray with some angle. The etch rate of the thermistor thin films was about 63nm/min at a condition of DI water : $HNO_3$: HCl = 60 : 30 : 10 vol%. The B constant and temperature coefficient of resistance of the thermistor thin films were 3500 K and -3.95 %/K, respectively. The voltage responsivity of the thermistor thin film infrared sensor was 108.5 V/W and its noise equivalent power and specific detectivity were $5.1\times 10^{-7}$ W/$Hz^{-1/2}$ and $0.2\times 10^6$cm $Hz^{1/2}$/W, respectively.

• Journal of Sensor Science and Technology
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• v.8 no.3
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• pp.226-231
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• 1999

Pyroelectric infrared sensors have been fabricated using P(VDF/TrFE) film with pyroelectric effect. The weight percent and thickness of the poled P(VDF/TrFE) film are 75/25 percent and $25\;{\mu}m$ respectively. For easier fabrication and connection method new top and bottom electrodes design was adapted for human body detecting pyroelectric infrared sensor. An aluminum infrared absorption electrode and bottom electrode were deposited by thermal evaporator. And the device was mounted in TO-5 housing to detect infrared light of $5.5{\sim}14\;{\mu}m$ wavelength. The responsibility, NEP (noise equivalent power) and specific detectivity $D^*$ of the device were $9.62{\times}10^5\;V/W$, $3.95{\times}10^{-7}\;W$ and $5.06{\times}10^5\;cm/W$ under emission energy of $13\;{\mu}W/cm^2$ respectively.

• Current Applied Physics
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• v.18 no.12
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• pp.1496-1506
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• 2018

Organic/inorganic ultraviolet photodetector was fabricated using thermal evaporation technique. Organic/inorganic heterojunction based on thermally evaporated copper (II) acetylacetonate thin film of thickness 200 nm deposited on an n-type silicon substrate is introduced. I-V characteristics of the fabricated heterojunction were investigated under UV illumination of intensity $65mW/cm^2$. The diode parameters such as ideality factor, n, barrier height, ${\Phi}_B$, and reverse saturation current, $I_s$, were determined using thermionic emission theory. The series resistance of the fabricated diode was determined using modified Nord's method. The estimated values of series resistance and barrier height of the diode were about $0.33K{\Omega}$ and 0.72 eV, respectively. The fabricated photodetector exhibited a responsivity and specific detectivity about 9 mA/W and $4.6{\times}10^9$ Jones, respectively. The response behavior of the fabricated photodetector was analyzed through ON-OFF switching behavior. The estimated values of rise and fall time of the present architecture under UV illumination were about 199 ms and 154 ms, respectively. Finally, enhancing the photoresponsivity of the fabricated photodetector, post-deposition plasma treatment process was employed. A remarkable modification of the device performance was noticed as a result of plasma treatment. These modifications are representative in a decrease of series resistance and an increase of photoresponsivity and specific detectivity. The process of plasma treatment achieved an increment of external quantum efficiency from 5.53% to 8.34% at -3.5 V under UV illumination.

• Journal of information and communication convergence engineering
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• v.4 no.4
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• pp.147-150
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• 2006

The thin film of PbTiO3 is fabricated at substrate temperature of 100-150$^{\circ}C$. The infrared spectrum of the ferroelectric thin film is measured as temperature of thermal treatment, 400 - 550$^{\circ}C$. According to infrared spectrum analysis, there are absorption bands at a nearby wave number of 1000 $\sim$ 400 cm-l and the thin film treated by temperature of 550$^{\circ}C$ has absorption bands of wave number 500 cm-l similar to infrared response property of PbTiO3 powder. The pyroelectric infrared detector is fabricated after deposition of Pt and PbTiO3 thin film on Si wafer by sputtering machine. The measured remnant polarization are 11.5-12.5$\muC/cm2$, breakdown electric field Ec is 100-120KV/cm, and voltage responsivity and detectivity is -280V/W, -108cm Hz/W.