• Title/Summary/Keyword: depth profiling

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A Study on the Sliding Wear Rate Calculation in Spur Gears (Spur Gear의 미끄럼 마멸률에 관한 연구)

  • 김태완;문석만;구영필;조용주
    • Tribology and Lubricants
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    • v.16 no.5
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    • pp.357-364
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    • 2000
  • In this study, the sliding wear in spur gears, using Archard's wear model, is analyzed. Formulas of tooth sliding wear depth along the line of action are derived. The tooth profile is modified Id make a smooth transmission of the normal loads and the cylinder profile for reducing the pressure spike is suggested. The sliding wear rate is calculated with these profiling results. We expect these modification methods to contribute to the reduction of sliding wear not only in the root, but the tip of tooth and tooth edge.

Multichannel Analysis of Surface Waves (MASW) Active and Passive Methods

  • Park, Choon-Byong
    • 한국지구물리탐사학회:학술대회논문집
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    • 2006.06a
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    • pp.17-22
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    • 2006
  • Shear modulus is directly linked to material's stiffness and is one of the most critical engineering parameters. Seismically, shear-wave velocity (Vs) is its best indicator. Although methods like refraction, down-hole, and cross-hole shear-wave surveys can be used, they are generally known to be tougher than any other seismic methods in field operation, data analysis, and overall cost. On the other hand, surface waves, commonly known as ground roll, are always generated in all seismic surveys with the strongest energy, and their propagation velocities are mainly determined by Vs of the medium. Furthermore, sampling depth of a particular frequency component of surface waves is in direct proportion to its wavelength and this property makes the surface wave velocity frequency dependent, i.e., dispersive. The multichannel analysis of surface waves (MASW) method tries to utilize this dispersion property of surface waves for the purpose of Vs profiling in 1-D (depth) or 2-D (depth and surface location) format. The active MASW method generates surface waves actively by using an impact source like sledgehammer, whereas the passive method utilizes those generated passively by cultural (e.g., traffic) or natural (e.g., thunder and tidal motion) activities. Investigation depth is usually shallower than 30 m with the active method, whereas it can reach a few hundred meters with the passive method. Overall procedures with both methods are briefly described.

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CPT-based lateral displacement analysis using p-y method for offshore mono-piles in clays

  • Kim, Garam;Park, Donggyu;Kyung, Doohyun;Lee, Junhwan
    • Geomechanics and Engineering
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    • v.7 no.4
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    • pp.459-475
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    • 2014
  • In this study, a CPT-based p-y analysis method was proposed for the displacement analysis of laterally loaded piles. Key consideration was the continuous soil profiling capability of CPT and cone resistance profiles that do not require artificial assumption or simplification for input parameter selection. The focus is on the application into offshore mono-piles embedded in clays. The correlations of p-y function components to the effective cone resistance were proposed, which can fully utilize CPT measurements. A case example was selected from the literature and used to validate the proposed method. Various parametric studies were performed to examine the effectiveness of the proposed method and investigate the effect of property profile and its depth resolution on the p-y analysis. It was found that the calculation could be largely misleading if wrongly interpreted sub-layer condition or inappropriate resolution of input soil profile was involved in the analyses. It was also found that there is a significant influence depth that dominates overall load response of pile. The soil profile and properties within this depth range affect most significantly calculated load responses, confirming that the soil profile within this depth range should be identified in more detail.

NanoAnalysis with TOF-MEIS (TOF-MEIS 나노분석법)

  • Yu, Kyu-Sang;Moon, DaeWon
    • Vacuum Magazine
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    • v.2 no.2
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    • pp.17-23
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    • 2015
  • Medium Energy Ion Scattering (MEIS) has been successfully used for ultrathin film analysis such as gate oxides and multilayers due to its single atomic depth resolution in compostional and structural depth profiling. Recently, we developed a time-of-flight (TOF) MEIS for the first time, which can analyze a $10{\mu}m$ small spot. Small spot analysis would be useful for test pattern analysis in semiconductor industry and various thin film technology. The ion beam damage problem is minimized due to its improved collection efficiency by orders of magnitude and the ion beam neutralization problem is removed completely for quantitative analysis. Newly developed TOF-MEIS has been applied for gate oxides, ultra shallow junctions, nanoparticles, FINFET structures to provide compositional and structural profiles. Further development for submicron spot analysis and applications for functional nano thin films and nanostructured materials are expected for various nanotechnology and biotehnology.

A Study on the Sodium and Moisture Gettering in PSG/SiO2 Passivated Al-1%Si Thin Film Interconnections (PSG/SiO2 보호막 처리된 Al-1%Si 박막배선에서의 Sodium과 수분 게터링에 관한 연구)

  • Kim, Jin Young
    • Journal of the Korean Vacuum Society
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    • v.22 no.3
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    • pp.126-130
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    • 2013
  • The sodium (Na) and moisture ($H_2O$) gettering phenomena were measured and analyzed in PSG/$SiO_2$ passivated Al-1%Si thin film interconnections. PSG/$SiO_2$ passivation and Al-1%Si thin films were deposited by using APCVD (atmosphere pressure chemical vapor deposition) and DC magnetron sputter techniques, respectively. SIMS (secondary ion mass spectrometry) depth profiling analysis was used to determine the distribution of sodium and moisture throughout the PSG/$SiO_2$ passivated Al-1%Si thin film interconnections. Both sodium and moisture peaks were observed strongly at the interfaces between layers rather than within the Al-1%Si thin film interconnections. Sodium peaks were observed at the interface between PSG and $SiO_2$ passivations, while moisture peaks were not observed.

The design and characteristic of the TiNx optical film for ARAS coating (ARAS용 TiNx 광학박막의 설계제작과 특성연구)

  • Park, Moon-Chan;Jung, Boo-Young;Hwangbo, Chang-Kwon
    • Journal of Korean Ophthalmic Optics Society
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    • v.6 no.2
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    • pp.31-35
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    • 2001
  • The anti-reflective anti-static(ARAS) optical film Was designed using conducting layer $TiN_x$ by Essential Macleod program. From this results, [air ${TiN_x{\mid}SiO_2{\mid}$ glass] two layer shows wide-band AR coating in the wavelength range of 450~700 nm. The $TiN_x$ thin films were prepared on the glass substrate by RF(radio-freqency) magnetron sputtering apparatus from a Ti target in agaseous mixture of argon and nitrogen with the thickness of 7~10 nm. For the films obtained, the chemical binding energy of the films was investigated by x-ray photoelectron spectroscopy(XPS) in order to analyze the chemical nature and composition of the films. In addition, we investigated the relationship between the surface resistance and the chemical nature the sheet resistance and XPS depth profiling the chemical binding of the films.

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Studies on the Adhesion of W to TiN(l) (TiN 에 대한 W의 부착특성에 관한 연구(l))

  • Lee, Jong-Mu;Gwon, Nan-Yeong;Son, Jae-Hyeon;Kim, Hyeong-Jun
    • Korean Journal of Materials Research
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    • v.3 no.5
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    • pp.466-475
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    • 1993
  • Adhesion of W to TiN which is used as a glue layer in the blanket tungsten process has been investigated using the pulling and scratch methods and analysed using surface roughness measurements by SEM and the reflectivity measurement, the stress measurement and the SIMS depth profiling Significant differences between the adhesion of the CVD tungsten film to the s-TiN and that to the a-TiN were found. It appeared that the fomer were better than the latter, which is due to the facts that the s-TiN film has a rougher surface and a lower stress level and a higher oxygen content than the a-TiN film. Also the ashesion strength was degreaded with increasing the TIN film thickness because of the increase of the TiN film stress.

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Electrical and optical property of organic LED using Al:Li/Ai cathode (Al:Li/Al cathode를 사용한 Organic LED의 전기적.광학적 특성연구)

  • Pang, Hee-Suk;Sung, Hyun-Ho;Park, Yong-Kuy;Lee, Joo-Hyeon;Kim, Sun-Woong;Ju, Sung-Hoo;Kim, Woo-Young;Lee, Chong-Chan;Park, Dai-Hee
    • Proceedings of the KIEE Conference
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    • 2000.07c
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    • pp.1736-1738
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    • 2000
  • ITO/TPD($450{\AA}$)/$Alq_{3}(500{\AA})$/Al:Li($1200{\AA}$) 구조의 유기 LED를 제작하였다. Al과 Al:Li(0.lwt%), Al:Li(1wt%), Al:Li(5wt %) 합금을 음전극으로 증착시켜 소자의 전기적 광학적 특성을 분석하였다. 음전극 내의 Li의 분포를 알아보기 위하여 SIMS(Secondary ion Mass Spectroscopy) depth profiling을 하였다. Al:Li합금에서 Li의 함량이 0.1 wt %에서 5 wt %로 증가함에 따라 소자의 turn-on voltage는 약 3.5 V에서 3 V로 감소하였고, 구동전압도 감소하였다. 200$cd/m^2$의 휘도를 기준으로 Al:Li(0.1wt %) 합금을 사용한 소자의 경우 3.5 lm/W로 발광효율이 최대였다. 증착된 Al:Li(0.1wt%) 합금의 SIMS depth profiling 결과 초기에만 Al:Li이 증착되어 Al:Li/Al의 두 층이 형성되었고, Al:Li 합금층의 두께는 약 120${\AA}$ 이었다.

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