• Title/Summary/Keyword: depth profiles

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Statistical Analysis of Cutting Force for End Milling with Different Cutting Tool Materials (공구재종에 따른 엔드밀 가공의 절삭력에 관한 통계적해석)

  • Choi, Man Sung
    • Journal of the Semiconductor & Display Technology
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    • v.15 no.4
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    • pp.86-91
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    • 2016
  • End milling is an important and common machining operation because of its versatility and capability to produce various profiles and curved surfaces. This paper presents an experimental study of the cutting force variations in the end milling of SM25C with HSS(high speed steel) and carbide tool. This paper involves a study of the Taguchi design application to optimize cutting force in a end milling operation. The Taguchi design is an efficient and effective experimental method in which a response variable can be optimized, given various control and noise factors, using fewer resources than a factorial design. This study included feed rate, spindle speed and depth of cut as control factors, and the noise factors were different cutting tool in the same specification. An orthogonal array of $L_9(3^3)$ of ANOVA analyses were carried out to identify the significant factors affecting cutting force, and the optimal cutting combination was determined by seeking the best cutting force and signal-to-noise ratio. Finally, confirmation tests verified that the Taguchi design was successful in optimizing end milling parameters for cutting force.

Korean Expatriates Adjustments and Job Satisfaction in Malaysia: Analysis of Corporate Cultural Asymmetry

  • Dastane, Omkar;Lee, Woo Yong Willis
    • The Journal of Industrial Distribution & Business
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    • v.7 no.4
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    • pp.33-45
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    • 2016
  • Purpose - The purpose of this study is to discover how Korean expatriates that are currently employed in Korean subsidiaries operational in Malaysia possibly suffer from career dissatisfaction due to differences between Korean Corporate Culture (KCC) and Malaysian Corporate Culture (MCC). The integration of KCC into MCC is discussed. Research design, data, and methodology - The analysis herein is via a qualitative research. Forty-six interviewees voluntarily participated in in-depth interviews. Document analysis and qualitative interviews were utilized to develop participant profiles and to generate the framework. Interview data were transcribed and subsequently analysed to facilitate the development of themes and ultimately led to emerging patterns. The framework discusses the following Confucian pillars pronounced in KCC: Control Systems, Power Structures, Organisational Structures, Authority and Harmony and Stories and Myths. Those pillars are analysed and the results of the interviews are discussed in detail. Results - Korean expatriates on assignment in Malaysia endure struggles in all five selected Confucian pillars as they are not symmetrical with Korean Corporate Culture common at head companies in Korea. Conclusion - As a consequence, there is substantial disharmony which needs to be rectified if Korean companies are to continue their 'miraculous' economic movement into the country.

Effect of Vertical Mixing Scheme on Upper Ocean Simulation of the East Sea (연직혼합모수화가 동해 상층 모사에 미치는 영향)

  • Jang, Chan-Joo;Lim, Se-Han
    • Journal of the Korea Institute of Military Science and Technology
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    • v.13 no.6
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    • pp.1034-1042
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    • 2010
  • This study investigates effects of three different parameterizations of vertical mixing scheme on upper ocean simulation of the East Sea, focusing on the seasonal variations of the sea surface temperature(SST) and the mixed layer depth(MLD) using an ocean general circulation model(GFDL MOM1.1). The considered vertical mixing schemes are the Laplacian scheme(L scheme) that use a constant eddy coefficient, the Mellor-Yamada scheme(MY scheme), and a new scheme(Noh scheme). The Noh scheme, a second-order turbulence closure, was developed considering recent observational evidences such as the enhancement of turbulent kinetic energy near the sea surface. During summer L scheme underestimates the SST, while MY scheme overestimates the SST, compared to climatological SST. Noh scheme produces the SST in better agreement with climatological one. During winter all schemes overestimate the SST up to $4^{\circ}C$ compared to climatological SST. Vertical profiles of the basin-mean temperature show that L scheme produces higher temperature below the thermocline than those of other schemes. The winter MLD simulated from L scheme is rather large compared to that from other schemes, but the differences in MLD during summer are not significant.

Effect of SLS Glass for Bulletproof Materials by Ion Exchange Technique (방탄소재 활용을 위한 SLS 유리의 이온교환 효과)

  • Kim, Tae-Yoon;Shim, Gyu-In;Choi, Se-Young
    • Journal of the Korea Institute of Military Science and Technology
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    • v.13 no.1
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    • pp.114-119
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    • 2010
  • There are a number of studies on chemically strengthened glass. Most of them are strengthened in molten salt bath below transformation range of glass. This research is distinguished from the aforementioned studies in that single $KNO_3$ powder was used by employing screen printing technique. In this study soda-lime-silicate(SLS) glasses for bulletproof glass application with various thicknesses were used. The maximum value of the bending strength is 791MPa heat treated at $480^{\circ}C$, which is about 4.3 times higher than the parent glass, which is the highest strength of all soda-lime glasses. In this study, it is also observed that Vickers hardness increased to $657H_v$, which is about 15% higher than the parent glass($568.7H_v$) and fracture toughness was not changed. Depth profiles measured by electron probe micro analyzer(EPMA) showed a correlation between the migrations of $K^+$ ions with bending strength of ion exchanged glasses.

CPT-based p-y analysis for mono-piles in sands under static and cyclic loading conditions

  • Kim, Garam;Kyung, Doohyun;Park, Donggyu;Lee, Junhwan
    • Geomechanics and Engineering
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    • v.9 no.3
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    • pp.313-328
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    • 2015
  • In the present study, a CPT-based p-y analysis method was proposed for offshore mono-piles embedded in sands. Static and cyclic loading conditions were both taken into account for the proposed method. The continuous soil profiling capability of CPT was an important consideration for the proposed method, where detailed soil profile condition with depth can be readily incorporated into the analysis. The hyperbolic function was adopted to describe the non-linear p-y curves. For the proposed hyperbolic p-y relationship, the ultimate lateral soil resistance $p_u$ was given as a function of the cone resistance, which is directly introduced into the analysis as an input data. For cyclic loading condition, two different cyclic modification factors were considered and compared. Case examples were selected to check the validity of the proposed CPT-based method. Calculated lateral displacements and bending moments from the proposed method were in good agreement with measured results for lateral displacement and bending moment profiles. It was observed the accuracy of calculated results for the conventional approach was largely dependent on the selection of friction angle that is to be adopted into the analysis.

Self-Aligned $n^+$ -pPolysilicon-Silicon Junction Structure Using the Recess Oxidation (Recess 산화를 이용한 자기정렬 $n^+$ -p 폴리실리콘-실리콘 접합구조)

  • 이종호;박영준;이종덕;허창수
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.30A no.6
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    • pp.38-48
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    • 1993
  • A recessed n-p Juction diode with the self-aligned sturcture is proposed and fabricated by using the polysilicon as an n$^{+}$ diffusion source. The diode structure can be applicable to the emitter-base formation of high performance bipolar divice and the n$^{+}$ polysilicone mitter has an important effect on the device characteristics. The considered parameters for the polysilicon formation are the deposition condition. As$^{+}$ dose for the doping of the polysilicon and the annealing condition using RTP system. The vertical depth profiles of the fabricated diode are obtained by SIMS and the electrical characteristics are analyzed in terms of the ideality factor of diode (n), contact resistance and reverse leakage current. In addition, n$^{+}$-p junction diodes are formed by using the amorphous silicon (of combination of amorphous and polysiliocn) instead of polysilicon and their characteristics are compared with those of the standard sample. The As$^{+}$ dose for the formation of good junction is about 1~2${\times}10^{16}cm^{2}$ at given RTA conditions (1100.deg. C, 10sec).

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THE CHANGES OF CHEMICAL PROPERTIES OF FOREST SOILS IN DRY AND WET SEASONS (건우기에 산림토양의 화학성분의 변화)

  • CHA, Jong Whan
    • Journal of Plant Biology
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    • v.7 no.2
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    • pp.1-8
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    • 1964
  • Cha, Jong Whan (Dept. of Biology, Graduate School, Dong Kuk Univ.) The changes of chemical properties of forest soils in dry and wet seasons. Kor. Jour. Bot. VII(2): 1-8, 1964. Soil selected for the present investigation was collected from a mountain of the Forestry Experiment Station of the vicinity of Seoul. The forest communities studied were three forest and a unplanted soils. The soil samples were obtained from each forest type during dry and wet seasons. And these samples were collected from four horizons of all communities respectively. It was showed that exchangeable hydrogen was increased by rainfall, and total exchangeable base decreased in the same way. The content of nitrogen is washed away by rainfall, especially ammonium nitrogen was highly significant between dry and wet season. On the contrary, organic matter and available phosphorus were of no significant difference between dry and wet seasons. The values of pH appeared a different response in dry and wet seasons according to the plant communities. The needle-leaved forest soils showed more acidity than the broad-leaved forest soils, and the least acidity in open places. All nutrients in soil studied gradually decreased down the profiles. According to statistical analyses of the soil components among all soil horizons, total exchangeable bases in wet season indicated only significant at 1%. Exchangeable hydrogen and organic matter of the soil in dry season was particularly very low with increased depth in the profile. The fertility level of most forested soils selected for the present investigation is low according to chemical tests for available nutrient elements.

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Characteristics of the Reoxidized Oxynitride Gate Dielectric for Charge Trap Type NVSM (전하 트랩 형 비휘발성 기억소자를 위한 재산화 산화질화막 게이트 유전악의 특성에 관한 연구)

  • 이상은;박승진;김병철;서광열
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.11a
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    • pp.37-40
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    • 1999
  • For the first time, charge trapping nonvolatile semiconductor memories with the deoxidized oxynitride gate dielectric is proposed and demonstrated. Gate dielectric wit thickness of less than 1 nm have been grown by postnitridation of pregrown thermal silicon oxides in NO ambient and then reoxidation. The nitrogen distribution and chemical state due to NO anneal/reoxidation were investigated by M-SIMS, TOF-SIMS, AES depth profiles. When the NO anneal oxynitride film was reoxidized on the nitride film, the nitrogen at initial oxide interface not only moved toward initial oxide interface, but also diffused through the newly formed tunnel oxide by exchange for oxygen. The results of reoxidized oxynitride(ONO) film analysis exhibits that it is made up of SiO$_2$(blocking oxide)/N-rich SiON interface/Si-rich SiON(nitrogen diffused tunnel oxide)/Si substrate. In addition, the SiON and the S1$_2$NO Phase is distributed mainly near the tunnel oxide, and SiN phase is distributed mainly at tunnel oxide/Si substrate interface.

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Properties of Recessed Polysilicon/Silicon($n^{+}$) - Silicon(P) Junction with Process Condition (공정조건에 따른 함몰된 다결정실리콘/실리콘($n^{+}$) - 실리콘(p) 접합의 특성)

  • 이종호;최우성;박춘배;이종덕
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1994.05a
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    • pp.152-153
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    • 1994
  • A recessed $n^{+}$-p junction diode with the serf-aligned structure is proposed and fabricated by using the polysilicon as an $n^{+}$ diffusion source. The diode structure can be applicable to the emitter-base formation of high performance bipolar device and the $n^{+}$ polysilicon emitter has an important effect on the device characteristics. The considered parameters for the polysilicon formation are the deposition condition $As^{+}$ dose for the doping of the polysilicon, and the annealing using RTP system. The vertical depth profiles of the fabricated diode are obtained by SIMS. The eleotrical characteristics are analyzed in trims of the ideality factor of diode (n), contact resistance arid reverse leakage current. The $As_{+}$ dose for the formation of good junction is current. The $As^{+}$ dose for the formation of goodjunctions is about 1∼2${\times}$$10^{16}$$cm^{-2}$ at given RTA condition ($1100^{\circ}C$, 10 sec). The $n^{+}$-p structure is successfully applied to the self-aligned bipolar device adopting a single polysilicon technology.

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Ohmic contact formation of single crystalline 3C-SiC for high temperature MEMS applications (초고온 MEMS용 단결정 3C-SiC의 Ohmic Contact 형성)

  • Chung, Gwiy-Sang;Chung, Su-Yong
    • Journal of Sensor Science and Technology
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    • v.14 no.2
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    • pp.131-135
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    • 2005
  • This paper describes the ohmic contact formation of single crystalline 3C-SiC thin films heteroepitaxially grown on Si(001) wafers. In this work, a TiW (Titanium-tungsten) film as a contact matieral was deposited by RF magnetron sputter and annealed with the vacuum and RTA (rapid thermal anneal) process respectively. Contact resistivities between the TiW film and the n-type 3C-SiC substrate were measured by the C-TLM (circular transmission line model) method. The contact phases and interface the TiW/3C-SiC were evaulated with XRD (X-ray diffraction), SEM (scanning electron microscope) and AES (Auger electron spectroscopy) depth-profiles, respectively. The TiW film annealed at $1000^{\circ}C$ for 45 sec with the RTA play am important role in formation of ohmic contact with the 3C-SiC substrate and the contact resistance is less than $4.62{\times}10^{-4}{\Omega}{\cdot}cm^{2}$. Moreover, the inter-diffusion at TiW/3C-SiC interface was not generated during before and after annealing, and kept stable state. Therefore, the ohmic contact formation technology of single crystalline 3C-SiC using the TiW film is very suitable for high temperature MEMS applications.