• Journal of Korean Society for Atmospheric Environment
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• v.18 no.E1
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• pp.1-12
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• 2002

One technique for determining dry acid deposition fluxes involves measurement of time - averaged ambient concentrations of dry acid deposition species using filter packs (FP) coupled with estimates of mean deposition velocities for the exposure period. A critical problem associated with filter pack data comparisons between various field sampling networks is the use of diverse sampling flow rates and duration protocols. Field experiments were conducted to evaluate the effects of varying sampling flow rates, from 1.5 to 10 standard liters per minute, on total nitrate and sulfate measurements of specific dry acid deposition species . Collocated FP samplers were used to determine sampling and analysis data reproducibility and representativeness . Ambient air samples were simultaneously collected using groups of filter packs operated at various flow rates over identical 7 day periods. The species measured were sulfur dioxide, particulate sulfate , nitric acid and particulate nitrate. Statistical results (ANOVA; alpha level 5%) showed that neither the low nor high sampling flow rates caused a significant difference in the measurements of total sulfate and adjusted total nitrate (ATN) . However, it was concluded that for high flow rate sampling measurements, total nitrate (TN) could be affected during extended sampling durations because of potential nitric acid overloading and breakthrough. Although the previous workers (Costello, 1990; Quillian, 1990) used much higher sampling flow rates (~ 17 sLpm) than employed here, it was assumed that for a high loading (> 50$\mu\textrm{g}$ HNO$_3$) of nitric acid on the Nylon filters, a significant fraction (~10%) of nitric acid could pass through the Nylon filters and be collected on the carbonate impregnated filters. It was concluded that even at the highest sampling flow rate employed (10 sLpm) at the Cary Forest site, nitric acid breakthrough was less than 10% of the total HNO$_3$ collected. However, for a heavily polluted urban airshed or with longer sampling times , higher filter loadings could result in substantial nitric acid breakthrough and HNO$_3$concentrations would be underestimated.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.63 no.2
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• pp.250-256
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• 2014

In this study, we deposited and investigated ${\mu}c$-Si:H thin films prepared by Plasma Enhanced Chemical Vapor Deposition(PECVD) system. To deposition silicon thin films, we controlled $SiH_4$ gas concentration, RF input power, and heater temperature. According to the experiments, the more $SiH_4$ gas concentration increased, deposition rate also increased but crystalline property decreased at the same conditions. In the RF input power case, deposition rate and crystalline property increased together when the input power increased from 100[W] to 300[W]. If RF input power was 300[W], deposition rate has reached saturation point. In the heater temperature, deposition rate increased when heater temperature increased. Crystalline property maintained a certain level until heater temperature was $250[^{\circ}C]$. And then it was a suddenly increased. Multistep method has been proposed to improve the quality of ${\mu}c$-Si:H thin film. $SiH_4$ gas was injected with a time interval. According to the experiments, crystallite ratio improve about 20~60[%] and photo conductivity increased up to six times.

• Transactions of the Korean Society of Mechanical Engineers
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• v.11 no.5
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• pp.828-836
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• 1987

The inclusion of thermophoresis in particle deposition studies has often been treated separately from deposition due to flow characteristics. Also previously reported experimental results on thermophoresis have been studied in the regions of relatively small temperature gradients. In this study, using real-time laser light reflectivity method, we measured the angular dependence of the deposition rates of particles of the cylindrical collector surface, which immerged in laminar flow of a hot gas suspension of small particles. And we extended the previous narrowband results of thermophoretic deposition rates to the regions of large temperature gradients between the hot gas stream and the collector surface. Based on the obtained data, the cylinder's forward stagnation-point region is considerably enriched in particle 'phase' density owing to the compressibility effect, which leads to locally enhanced deposition while the downstream region from the stagnation point inertial force acts in the opposite direction, which tends to centrifuge particles away from the wall, thus the local deposition rates by thermophoresis are reduced.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.398.1-398.1
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• 2014

The $Cu_2ZnSnSe_4$ (CZTSe) thin films solar cell is one of the next generation candidates for photovoltaic materials as the absorber of thin film solar cells because it has optimal bandgap (Eg=1.0eV) and high absorption coefficient of $10^4cm^{-1}$ in the visible length region. More importantly, CZTSe consists of abundant and non-toxic elements, so researches on CZTSe thin film solar cells have been increasing significantly in recent years. CZTSe thin film has very similar structure and properties with the CIGS thin film by substituting In with Zn and Ga with Sn. In this study, As-deposited CZTSe thin films have been deposited onto soda lime glass (SLG) substrates at different deposition condition using Pulsed Laser Deposition (PLD) technique without post-annealing process. The effects of deposition conditions (deposition time, deposition temperature) onto the structural, compositional and optical properties of CZTSe thin films have been investigated, without experiencing selenization process. The XRD pattern shows that quaternary CZTSe films with a stannite single phase. The existence of (112), (204), (312), (008), (316) peaks indicates all films grew and crystallized as a stannite-type structure, which is in a good agreement with the diffraction pattern of CZTSe single crystal. All the films were observed to be polycrystalline in nature with a high (112) predominant orientation at $2{\theta}{\sim}26.8^{\circ}$. The carrier concentration, mobility, resistivity and optical band gap of CZTSe thin films depending on the deposition conditions. Average energy band gap of the CZTSe thin films is about 1.3 eV.

• Proceedings of the Korean Vacuum Society Conference
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• 2001.02a
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• pp.23-24
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• 2001

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.484-488
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• 1997

BSCCO thin film is fabricated cia both processes of co-deposition and layer-by-layer deposition at an ultralow growth rate using ion beam sputtering method. The adsorption of Bi atom and the appearance of Bi-2212 phase shows large differance between both processes. It is found that the resident time of Bi vapor species on the surface of the substrate strongly dominates the film composition and the formation of the structure.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.277-277
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• 2012

New concept of coating process, which is called Electro Magnetic Levitation-Physical Vapour deposition (EML-PVD) was developed and investigated. Zinc coating was performed and succeeded for the first time on the steel strip (Cold-rolled Steel) in a continuos pilot line using the EML-PVD process which is specialized in the high deposition rate and high vapor yield. EML-PVD will be expected to be the next generation coating technology to be applied to the steel industry.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.25 no.4
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• pp.79-87
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• 2011

In this paper, the best conditions for the deposition of the high quality diamond thin-film from N-hexane as a carbon source in the microwave plasma process was carried out. Major parameters are the deposition time, flow rates of oxygen and hexane. The deposition time for the steady state thin-film was required more than 4[h], and the suitable flow rates of hexane and oxygen for the high-quality thin-film are 0.4[sccm] and 0.1~0.2[sccm], respectively. In addition, amorphous carbons such as DLC and graphite were grown by increasing the flow rate of hexane, and it decreased by increasing the flow rate of oxygen. Specifically, the growth rate is about 1.5[${\mu}mh-1$] under no addition of oxygen and it decreased about 60[%] as ca. 1.0[${\mu}mh-1$] with oxygen.

• Journal of the Korean Ceramic Society
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• v.39 no.5
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• pp.517-522
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• 2002

In this study, the effect of the processing parameters in PVD process on the size and the distribution of deposited Si quantum dots was quantitatively investigated by computational simulation utilizing Monte Carlo method. The processing parameters, substrate temperature, deposition time, gas pressure and target-substrate distance were selected as variables since those parameters are often selected as variables in PVD experiments. It is predicted that the density of $1{\times}10^{12}cm^{-2}$ Si quantum dots can be deposited on the substrate when the deposition rate is 0.05 nm/sec at the substrate temperature of 490${\circ}$, deposition time of 7 sec, gas pressure of 3 mTorr and target-substrate distance of 8 cm.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.3
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• pp.27-33
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• 2000

The selective chemical vapor deposition techniques for Cu metallization were studied. For enhancing the selectivity, furnace annealing and N$_{2}$ plasma were treated on patterned TiN/BPSG prior to the copper deposition. As a result, Cu did not deposited lead to suppressing the nucleation on BPSG singificantly. With the increasement the plasma treatment temperature, copper nucleation on BPSG was suppressed mote effectively, From TOF-SIMS(Time-of-Flight Secondary ion Mass Spectrometry), it is considered that annealing and N$_{2}$ plasma treatment remove hydroxyl(0-H) group so that eliminating the nucleation site for copper precursor enhance the selectivity.