• 제목/요약/키워드: deposition thickness

검색결과 1,562건 처리시간 0.032초

Direct Printing and Patterning of Highly Uniform Graphene Nanosheets for Applications in Flexible Electronics

  • 구자훈;이태윤
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2011년도 춘계학술발표대회
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    • pp.39.2-39.2
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    • 2011
  • With the steady increase in the demand for flexible devices, mainly in display panels, researchers have focused on finding a novel material that have excellent electrical properties even when it is bended or stretched, along with superior mechanical and thermal properties. Graphene, a single-layered two-dimensional carbon lattice, has recently attracted tremendous research interest in this respect. However, the limitations in the growing method of graphene, mainly chemical vapor deposition on transition metal catalysts, has posed severe problems in terms of device integration, due to the laborious transfer process that may damage and contaminate the graphene layer. In addition, to lower the overall cost, a fabrication technique that supports low temperature and low vacuum is required, which is the main reason why solution-based process for graphene layer deposition has become the hot issue. Nonetheless, a direct deposition method of large area, few-layered, and uniform graphene layers has not been reported yet, along with a convenient method of patterning them. Here, we report an evaporation-induced technique for directly depositing few layers of graphene nanosheets with excellent uniformity and thickness controllability on any substrate. The printed graphene nanosheets can be patterned into desired shapes and structures, which can be directly applicable as flexible and transparent electrode. To illustrate such potential, the transport properties and resistivity of the deposited graphene layers have been investigated according to their thickness. The induced internal flow of the graphene solution during tis evaporation allows uniform deposition with which its thickness, and thus resistivity can be tuned by controlling the composition ratio of the solute and solvent.

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EFFECTS OF GRID SPACER WITH MIXING VANE ON ENTRAINMENTS AND DEPOSITIONS IN TWO-PHASE ANNULAR FLOWS

  • KAWAHARA, AKIMARO;SADATOMI, MICHIO;IMAMURA, SHOGO;SHIMOHARAI, YUTA;HIRAKATA, YUDAI;ENDO, MASATO
    • Nuclear Engineering and Technology
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    • 제47권4호
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    • pp.389-397
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    • 2015
  • The effects of mixing vanes (MVs) attached to a grid spacer on the characteristics of air-water annular flows were experimentally investigated. To know the effects, a grid spacer with or without MV was inserted in a vertical circular pipe of 16-mm internal diameter. For three cases (i.e., no spacer, spacer without MV, and spacer with MV), the liquid film thickness, liquid entrainment fraction, and deposition rate were measured by the constant current method, single liquid film extraction method, and double liquid film extraction method, respectively. The MVs significantly promote the re-deposition of liquid droplets in the gas core flow into the liquid film on the channel walls. The deposition mass transfer coefficient is three times higher for the spacer with MV than for the spacer without MV, even for cases 0.3-m downstream from the spacer. The liquid film thickness becomes thicker upstream and downstream for the spacer with MV, compared with the thickness for the spacer without MV and for the case with no spacer.

플라즈마 화학증착법(PACVD)에 의한 TiN증착시 증착변수가 미치는 영향(II) -TiCl4, N2의 입력분율을 중심으로- (Effects of Deposition Parameters on TiN Film by Plasma Assisted Chemical Vapor Deposition(II) -Influence of TiCl4, N2 inlet Fraction on the TiN Deposition-)

  • 이병호;신영식;김문일
    • 열처리공학회지
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    • 제2권4호
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    • pp.11-18
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    • 1989
  • To investigate the influence of $TiCl_4$, $N_2$ inlet fraction on the TiN layer, TiN film was deposited onto the STC3 and STD11 steel from gas mixtures of $TiCl_4/N_2/H_2$ by the radio frequency plasma assisted chemical vapor deposition. The films were deposited at various $TiCl_4$, $N_2$ inlet fractions. The results showed that the film thickness was increased with $TiCl_4$ inlet fraction. However, while the thickness was increased with $N_4$ inlet fraction under 0.4 the thickness was decreased with increasing $N_2$ inlet fraction over 0.4. The density of deposited films was varied as $TiCl_4$, $N_2$ inlet fraction and its maximum value was about $5.6g/cm^3$. The contents of chlorine were increased with increasing $TiCl_4$ inlet fraction and nearly constant with increasing $N_2$ inlet fraction.

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The Effect of Thickness on Flexible, Electrical and Optical properties of Ti- ZnO films on Flexible Glass by Atomic Layer Deposition

  • 이우재;윤은영;권세훈
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.196.1-196.1
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    • 2016
  • TCO(Transparent Conducting Oxide) on flat glass is used in thin-film photovoltaic cell, flat-panel display. Nowadays, Corning(R) Willow Glass(R), known as flexible substrate, has attracted much attention due to its many advantages such as reliable roll-to-roll glass processing, high-quality flexible electronic devices, high temperature process. Also, it can be an alternative to flexible polymer substrates which have their poor stability and degradation of electrical and optical qualities. For application on willow glass, the flexibility, electrical, optical properties can be greatly influenced by the TCO thin film thickness due to the inherent characterization of thin film in nanoscale. It can be expected that while thick TCO layer causes poor transparency, its sheet resistance become low. Also, rarely reports were focusing on the influence of flexible properties by varying TCO thickness on flexible glass. Therefore, it is very important to optimize TCO thickness on flexible Willow glass. In this study, Ti-ZnO thin films, with different thickness varied from 0 nm to 50 nm, were deposited on the flexible willow glass by atomic layer deposition (ALD). The flexible, electrical and optical properties were investigated, respectively. Also, these properties of Ti-doped ZnO thin films were compared with un-doped ZnO thin film. Based on the results, when Ti-ZnO thin films thickness increased, resistivity decreased and then saturated; transmittance decreased. The Figure of Merit (FoM) and flexibility was the highest when Ti-ZnO thickness was 40nm. The flexible, electrical and optical properties of Ti-ZnO thin films were better than ZnO thin film at the same thickness.

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D. C. 마그네트론 스퍼터링에 의한 증착조건이 TiN다층박막의 밀착력에 미치는 영향 (The effect of deposition conditions on the adhesion strength of TiN multilayer by D. C. magnetron sputtering)

  • 김선규;유정광;이건환;권식철
    • 한국표면공학회지
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    • 제29권4호
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    • pp.261-267
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    • 1996
  • The characteristics and adhesion strength of TiN layer deposited by D. C. magnetron sputtering were investigated. Three types of TiN layers were deposited on STS304 stainless steel. Scratch tests were performed to determine the effect of deposition temperature, the thickness of coated TiN layer and the titanium inter-layer on the adhesion strength. TiN multilayer with titanium inter-layer showed the highest critical load in the deposition temperature range of $25^{\circ}C$ to $300^{\circ}C$. Adhesion strength of TiN multilayer with titanium inter-layer was raised from 15N to 20N by raising deposition temperature from $25^{\circ}C$ to $400^{\circ}C$. Adhesion strength was raised from 18N to 38N by increasing the thickness of outer layer of TiN multilayer from 2.1 $\mu\textrm{m}$ to 9.5 $\mu\textrm{m}$.

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CIGS 박막 태양전지용 CdS 버퍼층 제조 공정의 in-situ 모니터링 기술 (In-situ monitoring technique for deposition process of CdS buffer layer for CIGS thin film solar cells)

  • 권영준;안세진;윤재호;윤경훈
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2008년도 춘계학술대회 논문집
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    • pp.434-435
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    • 2008
  • An in-situ monitoring technique for deposition process of CdS buffer layer was developed in this work. A quartz crystal microbalance (QCM) was used to measure the frequency change during the CdS deposition process and the relation ship between frequency change and film thickness and optical transmittance was investigated. The film thickness shows a linear relationship with frequency change, demonstrating that frequency change measured by QCM can be used a in-situ monitoring tool for CdS deposition process.

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A STUDY ON COPPER DEPOSITION PROCESS DURING ANODIC OXIDATION OF ALUMINIUM ALLOY

  • Koh, I.S.;Han, S.H.;Shin, D.H.
    • 한국표면공학회지
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    • 제32권3호
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    • pp.444-446
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    • 1999
  • The structure and composition of anodic films, formed on 6063 commercial aluminium alloy at constant current density of $1.5A/^dm2$ with various superimposed cathodic current ratio, in the range 0~33%, in the 11% $H_2SO_4$ with various concentration of $CuSO_4{\cdot}5H_2O$, in the range 0~75 g/l, without cathodic current are generally porous-type and no sign of Cu co-deposition appearance, suggesting that cathodic current is an important factor in the Cu co-deposition. Comparison with the anodic film thickness measurement results obtained from anodic film formed by direct anodic current and anodic film formed by superimposed various portion of cathodic current, the portion of cathodic current of input current increases with decrease of anodic film thickness and increases with increase of concentration of $Cu_2S{\;}and{\;}Cu_2O$ in the anodic film.

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Effect of Deposition Parameters on the Morphology and Electrochemical Behavior of Lead Dioxide

  • Hossain, Md Delowar;Mustafa, Chand Mohammad;Islam, Md Mayeedul
    • Journal of Electrochemical Science and Technology
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    • 제8권3호
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    • pp.197-205
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    • 2017
  • Lead dioxide thin films were electrodeposited on nickel substrate from acidic lead nitrate solution. Current efficiency and thickness measurements, cyclic voltammetry, AFM, SEM, and X-ray diffraction experiments were conducted on $PbO_2$ surface to elucidate the effect of lead nitrate concentration, current density, temperature on the morphology, chemical behavior, and crystal structure. Experimental results showed that deposition efficiency was affected by the current density and solution concentration. The film thickness was independent of current density when deposition from high $Pb(NO_3)_2$ concentration, while it decreased for low concentration and high current density deposition. On the other hand, deposition temperature had negative effect on current efficiency more for lower current density deposition. Cyclic voltammetric study revealed that comparatively more ${\beta}-PbO_2$ produced compact deposits when deposition was carried out from high $Pb(NO_3)_2$ concentration. Such compact films gave lower charge discharge current density during cycling. SEM and AFM studies showed that deposition of regular-size sharp-edge grains occurred for all deposition conditions. The grain size for high temperature and low concentration $Pb(NO_3)_2$ deposition was bigger than from low temperature and high concentration deposition conditions. While cycling converted all grains into loosely adhered flappy deposit with numerous pores. X-ray diffraction measurement indicates that high concentration, high temperature, and high current density favored ${\beta}-PbO_2$ deposition while ${\alpha}-PbO_2$ converted to ${\beta}-PbO_2$ together with some unconverted $PbSO_4$ during cycling in $H_2SO_4$.

Physical Vapor Deposition 방법으로 제조된 Al-Ni 전극의 두께가 알칼라인 수전해 수소발생반응에 미치는 영향 연구 (Understanding the Effect on Hydrogen Evolution Reaction in Alkaline Medium of Thickness of Physical Vapor Deposited Al-Ni Electrodes)

  • 한원비;조현석;조원철;김창희
    • 한국수소및신에너지학회논문집
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    • 제28권6호
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    • pp.610-617
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    • 2017
  • This paper presents a study of the effect of thickness of porous Al-Ni electrodes, on the Hydrogen Evolution Reaction (HER) in alkaline media. As varying deposition time at 300 W DC sputtering power, the thickness of the Al-Ni electrodes was controlled from 1 to $20{\mu}m$. The heat treatment was carried out in $610^{\circ}C$, followed by selective leaching of the Al-rich phase. XRD studies confirmed the presence of $Al_3Ni_2$ intermetallic compounds after the heat treatment, indicating the diffusion of Ni from the Ni-rich phase to Al-rich phase. The porous structure of the Al-Ni electrodes after the selective leaching of Al was also confirmed in SEM-EDS analysis. The double layer capacitance ($C_{dl}$) and roughness factor ($R_f$) of the electrodes were increased for the thicker Al-Ni electrodes. As opposed to the general results in above, there were no further improvements of the HER activity in the case of the electrode thickness above $10{\mu}m$. This result may indicate that the $R_f$ is not the primary factor for the HER activity in alkaline media.

탄소나노튜브 박막 제조를 위한 분무공정에서의 증착 두께 분포 예측 모델 개발 (Development of Numerical Model for Predicting Deposition Thickness Distribution during Spray Process for Carbon Nanotube Thin Films)

  • 최두순;김덕종;장동환
    • 대한기계학회논문집B
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    • 제35권9호
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    • pp.969-974
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    • 2011
  • 탄소나노튜브(CNT)는 원통형의 탄소나노 구조물로서, 뛰어난 전도특성과 열전도율을 갖는다. 이러한 특성을 이용한 다양한 응용 분야의 하나로 CNT 를 박막형태의 그물망으로 제작하여 전도성 필름으로 응용하는 방안이 연구되고 있다. 이러한 CNT 의 박막 제조 방법 중, 분무 코팅 방식은 대면적 박막 제조에 널리 사용되나, 박막 두께를 균일하게 제작하는 점에 어려움이 있다. 이러한 문제점을 해결하려면 분무시의 공정조건이 증착 두께 분포에 미치는 효과를 잘 분석해야 한다. 본 연구에서는 분무 공정에서의 증착두께분포를 예측하기 위한 수치해석 모델을 개발하였다. 또한, 개발된 모델을 이용하여 여러가지 노즐 경로에 따른 증착 두께 분포를 분석하였다.