• Title/Summary/Keyword: deposition rate

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Fabrication of HTS Microstrip Bandpass Filters using CeO$_2$ buffered YBCO Films grown on ${\alpha}\;Al_2O_3$ substrates (CeO$_2$ 버퍼막과 함께 ${\alpha}\;-Al_2O_3$ 기판 위에 성장된 YBCO 박막을 사용한 HTS Microscrp Bandpass filter의 제작)

  • Jung, Gu-Rak;Chu, Hyeong-Gon;Kang, Joon-Hee;Park, Sang-Jin;Sok, Jung-Hyeon;Lee, Eun-Hong
    • 한국초전도학회:학술대회논문집
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    • v.9
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    • pp.58-62
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    • 1999
  • We fabricated a new hairpin type HTS 2-pole microstrip Bandpass filter to operate at 5.8GHz. The fabrication method was pulsed laser deposition and YBCO films were deposited on ${\alpha}$-A1$_2O_3$ substrates with a CeO$_2$ thin layer as a buffer layer. We developed a new style hairpin type filter by using interdigitide innerpole. Compared to the saute size regular hairpin type filters, our filter had a lower center frequency, bandwidth and loss by an amount of 14.5%, 29.6%, 0.5488dB, respectively. The size of the filters were 13.7${\times}$3.3mm. We did simulations on the several types of band pass filters by using HFSS and serenade. We measured growth rate and Tc of YBCO films grown on CeO$_2$/ ${\alpha}$-A1$_2O_3$ substrates which were rotated while growing films.

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GROUNDWATER RECHARGE ESTIMATION USING ARCGIS-CHLORIDE MASS BALANCE APPROACH

  • Lee Ju Young;Krishinamurshy Ganeshi
    • Water Engineering Research
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    • v.6 no.1
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    • pp.31-38
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    • 2005
  • Groundwater recharge is defined in an addition of water to groundwater reservoir. Recently, many people have been moving to the Edwards aquifer and urban and agricultural industry have been expending. Hydrologists and water planning managers concern about insufficient groundwater amounts and irrigation water price variability. In this paper, I focus on estimates of local recharge volumes and quantify preferential flow through GIS technique. Chloride Mass Balance (CMB) and hydrochemical components have been widely applied to recharge rate and evaluate flow paths. The CMB method is based on relationship between wet-dry chloride deposition data and Rainfall data. These data are manipulated using ArcGIS. Especially, hydrochemical concentration distribution is good index for groundwater residence times or flow paths such as $[Mg^{2+}]/[Ca^{2+}],[Cl]$ and log$([Ca^{2+}]+[Mg^{2+}])/[Na^+]$. Well information such as hydrological-hydrochemical data are imported into ArcGIS and manipulated by interpolation techniques. For each potentiometric surface and water quality, point data are converted to spatial data through each Kriging and Inverse Distance Weighted (IDW) techniques.

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Development of Two-Dimensional Sediment Transport Model Using Observed Erosion Rate (침식률 측정자료를 이용한 2차원 퇴적물 수송모형의 개발)

  • Jeong, Tae-Seong
    • Journal of Korea Water Resources Association
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    • v.34 no.6
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    • pp.687-699
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    • 2001
  • A 2-dimensional numerical sediment transport model has been developed by using erosion rates observed by SEDFLUME. The model un boundary-fitted coordinate can reduce inaccuracy of sediment model with accurate erosion data. Suspended transport and bed load transport are included in the model together. The model results gave good agreement with particle size distributions in 1-d channel and was more accurate than that of HIDAS of 1-dimensional model. The model applied to an enlarging channel to check model performance in 2-dimensional domain. Bed coarsening reduced erosion and deposition.

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Diffusion characterization of Doped Oxide and Nitride Film (도핑한 산화막 및 질화막의 확산특성)

  • 이종덕;김원찬
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.22 no.2
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    • pp.97-105
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    • 1985
  • Phosphorus and boron diffusion from doped PECVD oxide films into silicon have been studied. CVD PSG was also prepared to parallelly compare the diffusion characteristics of CVD PSG with that in PECVD PSG, The phosphorus diffusion experiments were performed in N2 and O2 ambient at the temperatures of 100$0^{\circ}C$, 105$0^{\circ}C$ and 110$0^{\circ}C$ The parameters of boron diffusion have been investigated from the doped film prepared by changing B2 H6 flow rate and deposition temperature. The diffusivities and diffusion profiles of the dopant into silicon were calculated by applying Barry's model using the measured parameters such as diffusion depth and surface concentration.

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Growth characteristics of 4H-SiC homoepitaxial layers grown by thermal CVD (화학기상증착법으로 성장시킨 4H-SiC 동종박막의 성장 특성)

  • Jang, Seong-Joo;Jeong, Moon-Taeg;Seol, Woon-Hag;Park, Ju-Hoon
    • Proceedings of the Korea Association of Crystal Growth Conference
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    • 1999.06a
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    • pp.271-284
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    • 1999
  • As a semiconductor material for electronic devices operated under extreme environmental conditions, silicon carbides (SiCs) have been intensively studied because of their excellent electrical, thermal and other physical properties. The growth characteristics of single-crystalline 4H-SiC homoepitaxial layers grown by a thermal chemical vapor deposition (CVD) were investigated. Especially, the successful growth condition of 4H-SiC homoepitaxial layers using a SiC-uncoated graphite susceptor that utilized Mo-plates was obtained. The CVD growth was performed in an RF-induction heated atmospheric pressure chamber and carried out using off-oriented substrates prepared by a modified Lely method. In order to investigate the crystallinity of grown epilayers, Nomarski optical microscopy, Raman spectroscopy, photoluminescence(PL), scanning electron microscopy (SEM) and other techniques were utilized. The best quality of 4H-SiC homoepitaxial layers was observed in conditions of growth temperature 1500$^{\circ}C$ and C/Si flow ratio 2.0 of C3H3 0.2sccm & SiH4 0.3sccm. The growth rate of epilayers was about 1.0$\mu\textrm{m}$/h in the above growth condition.

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Surface analysis of a-$Si_xC_{1x}:H$ deposited by RF plasma-enhanced CVD (RF plasma-enhancd CVD 법에 의해 증착된 a-$Si_xC_{1x}:H$ 의 표면분석)

  • Kim, Yong-Tak;Yang, Woo-Seok;Lee, Hyun;Byungyou Hong;Yoon, Dae-Ho
    • Proceedings of the Korea Association of Crystal Growth Conference
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    • 1999.06a
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    • pp.285-303
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    • 1999
  • Thin films of hydrogenated amorphous silicon carbide compounds (a-SixC1x:H) of different compositions were deposited on Si substrate by RF plasma-enhanced chemical vapor deposition (PECVD). Experiments were carried out using silane(SiH4) and methane(CH4) as the gas precursors at 1 Torr and at low substrate temperature (25$0^{\circ}C$). The gas flow rate was changed with every other parameters (pressure, temperature, RF power) fixed. The substrate was Si(100) wafer and all of the films obtained were amorphous. The bonding structure of a-SixC1x:H films deposited was investigated by X-ray photoelectron spectroscopy (XPS) for the film compositions. In addition, the surface morphology of films was investigated by atomic force microscopy (AFM).

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The Wet Etching Rate of Metal Thin Film by Sputtering Deposition Condition (스퍼터링 증착 조건에 따른 금속 박막의 습식 식각율)

  • Hur, Chang-Wu
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.14 no.6
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    • pp.1465-1468
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    • 2010
  • The wet etching is a process using chemical solution and occurring chemical reaction on substrate surface. when we do wet etching process, we have to consider stoichiometry, etching time and temperature of etchant for good resolution. In this experiment, we used Cr, Al andIndium-tin-oxide (ITO) metal and we deposited them with DC sputtering machine. The Cr thin film metal thickness is about $1300{\AA}$, ITO films show a low electrical resistance and high transmittance in the visible range of an optical spectrum and Ai film is used for signal line. We measured and analysed wet etching properties on the metal thin films.

An experimental study on depositional environments and consolidation properties of Shihwa deposits (시화지역 퇴적층의 퇴적환경과 압밀 특성에 관한 연구)

  • Won, Jeong-Yun;Chang, Pyoung-Wuck;Kim, Dong-Beom;Son, Young-Hwan
    • Proceedings of the Korean Geotechical Society Conference
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    • 2004.03b
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    • pp.203-210
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    • 2004
  • Consolidation properties were analysed by means of depositional environments. Depositional environments including geochemical properties, porewater chemistry, sediment structures, particle size distributions and carbon age dating were analysed using undisturbed samples retrieved successively from a boring hole in the study area. Laboratory oedometer tests and anisotropic consolidated triaxial tests(CKoUC) were performed to examine the overconsolidation phenomenons. Based on the carbon age dating results and profiles of geochemical properties, porewater chemistry, salinity and pH, it was founded that the upper silt/clay complex layer was deposited under marine condition while sand and clay layers were deposited under fluvial condition. Planar laminated structures of silts and clays were dominant in marine deposits. Although there was no clear evidences that geological erosion had been occurred in marine deposits, overconsolidation ratio obtained from oedometer tests were greater than unity. Stress paths of samples behaved similar to those of normally consolidated clays. Data plotted in stress state charts proposed by Burland(1990) and Chandler(2000) showed that the marine deposits were geologically normally consolidated. These apparent overconsolidations can be explained by the fabric and chemical bonding due to the difference of the rate of deposition.

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Magnetic Properties of Co-Cr Thin Films Deposited by FTS Method (FTS 방식으로 증착된 Co-Cr 박막의 자기적 특성)

  • Son, In-Hwan;Kim, Myung-Ho;Kong, Sok-Hyun;Kim, Kyung-Hwan;Nakagawa, S.;Naoe, M.
    • Proceedings of the KIEE Conference
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    • 1998.07d
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    • pp.1279-1281
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    • 1998
  • The Co-Cr thin films are one of the most suitable candidates for perpendicular magnetic recording media. The facing targets sputtering(FTS) method has a advantage of preparing films over a wide range of working gas pressure on plasma-free substrates. In this study, we investigated the possibility of employing FTS system for depositing Co-Cr films, Co-Cr thin films were deposited with continuously sputter gas pressure ($P_{Ar}$ = 0.1 mTorr) by FTS method at temperature of $40^{\circ}C$. We find that the change of thickness and deposition rate of sputtered Co-Cr thin films affect crystal orientation and magnetic properties. Crystallographic and magnetic properties were evaluated by x-ray diffractometry(XRD) and vibrating sample magnetometer(VSM) respectively. It has been confirmed that the FTS method is very useful for preparing Co-Cr thin film recording media.

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Effects of Oxygen Flow Ratio on the Crystallographic Orientation of NiO Thin Films Deposited by RE Magnetron Sputtering (RF 마그네트론 스퍼터링에 의한 NiO 박막 증착시 산소 유량비가 박막의 결정 배향성에 미치는 영향)

  • 류현욱;최광표;노효섭;박용주;박진성
    • Journal of the Korean Ceramic Society
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    • v.41 no.2
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    • pp.106-110
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    • 2004
  • Nickel oxide (NiO) thin films were prepared on Si(100) substrates at room temperature by RF magnetron sputtering using a NiO target. The effects of oxygen flow ratio for the plasma gas on the preferred orientation and surface morphology of the NiO films were investigated. Highly crystalline NiO film with (100) orientation was obtained when it was deposited in pure Ar gas. For NiO film deposited in pure O$_2$ gas, on the other hand, the orientation of the film changed from (100) to (111) and its deposition rate decreased. The origin of the preferred orientation of the films was discussed. NiO films also showed different surface morphologies and roughnesses with the oxygen flow ratio.