• Ecology and Resilient Infrastructure
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• v.2 no.3
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• pp.237-246
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• 2015

Heavy metal pollution in soil, such as lead contamination, has become an area of interest in Korea because of urbanization and atmospheric deposition from neighboring countries. Therefore, in this research, eco-physiological responses such as chlorophyll contents, antioxidant enzyme activity, photosynthetic rate, biomass and phytoaccumulation abilities were investigated for 4 commonly used native roadside tree species to suggest suitable tree species to cope with lead contamination. The target species, Ginkgo biloba, Prunus yedoensis, Zelkova serrata and Chionanthus retusus showed lead toxicity by significant changes of chlorophyll contents and antioxidant enzyme activities on treatments over 200 mg Pb/kg. However, biomass and photosynthetic rates only showed significant responses of plants in the highest level (5,000 mg/kg) treatment. Especially, G. biloba did not show any significant changes of antioxidant enzyme activity, photosynthetic rate, and biomass even in the highest level treatment. In low level - environmentally realistic treatments, G. biloba and P. yedoensis showed the highest phytoaccumulation rate of lead from soil. Selecting and planting species like G. biloba which have good phytoaccumulation abilities and resistance to lead contamination by further research will be required to deal with emerging lead contamination.

• Journal of the Semiconductor & Display Technology
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• v.8 no.3
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• pp.19-23
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• 2009

We have studied dielectric characteristics of low-k interlayer dielectric materials was fabricated by plasma enhanced chemical vapor deposition (PECVD). BTMSM precursor was introduced with the flow rates from 24 sccm to 32 sccm by 2 sccm step in the constant flow rate of 60 sccm $O_2$. Then, SiOCH thin film deposited at room temperature was annealed at temperature of $400^{\circ}C$ and $500^{\circ}C$ for 30 minutes in vacuum. The vibrational groups of SiOCH thin films were analyzed by FT/IR absorption lines, and the dielectric constant of the low-k SiOCH thin films were obtained by measuring C-V characteristic curves. With the result that FTIR analysis, as BTMSM flow rate increase, relative carbon content of SiOCH thin film increased from 29.5% to 32.2%, and increased by 32.8% in 26 sccm specimen after $500^{\circ}C$ annealing. Dielectric constant was lowest by 2.32 in 26 sccm specimen, and decreased more by 2.05 after $500^{\circ}C$ annealing. Also, leakage current is lowest by $8.7{\times}10^{-9}A/cm^2$ in this specimen. In the result, shift phenomenon of chemical bond appeared in SiOCH thin film that BTMSM flow rate is deposited by 26 sccms, and relative carbon content was highest in this specimen and dielectric constant also was lowest value

• Animal Bioscience
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• v.34 no.6
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• pp.985-992
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• 2021

Objective: Artificial insemination plays an important role in genetic improvement in the goat farming system. The aim of this study was to investigate the effect of cervical application of hyaluronan (HA) on the fertility in goats after cervical artificial insemination using frozen-thawed (F-T) semen. Methods: After oestrous synchronisation with progesterone sponges and pregnant mare serum gonadotropin injection, both nulli- and multi-parous goats, were randomly allocated to 2 groups, and were inseminated with 0.25 mL of F-T semen (150×106 spermatozoa) twice at 52 h and 56 h after sponge removal. Prior to the insemination, goats in Group 1 only were given topical cervical HA application at 48 h after sponge removal. Site of insemination was recorded as os-cervix or intra-cervix or intra-uterus. Pregnancy was tested ultrasonographically 42 days after insemination. The data on pregnancy rates and percentage of animals according to the site of semen deposition were compared by Chi-square analysis. Results: The overall pregnancy rate was significantly (p<0.004) higher in goats with prior application to the cervix with HA (63.3%) than without (36.0%). Same pattern was observed in the pregnancy rates of nulli- and multi-parous goats in both the groups. Percentage of nulliparous goats according to the site of insemination in the HA group did not differ between first and the second insemination. However, in multiparous goats the percentage of animals inseminated intra-cervically was significantly increased (p≤0.05) between the first and the second inseminations. Conclusion: The results suggest that significantly higher fertility rate in the "HA goats" compared to the "without HA" group was because of deeper insemination facilitated by topical cervical application of HA. The deeper insemination into the cervical canal increase the rate of fertilisation when the cervical artificial insemination is performed.

• Nano
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• v.13 no.10
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• pp.1850124.1-1850124.12
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• 2018

$TiO_2$ films were deposited from oxygen/titanium tetraisopropoxide (TTIP) plasmas at low temperature by Helicon-PECVD at floating potential ($V_f$) or substrate self-bias of -50 V. The influence of titanium precursor partial pressure on the morphology, nanostructure and optical properties was investigated. Low titanium partial pressure ([TTIP] < 0.013 Pa) was applied by controlling the TTIP flow rate which is introduced by its own vapor pressure, whereas higher titanium partial pressure was formed through increasing the flow rate by using a carrier gas (CG). Then the precursor partial pressures [TTIP+CG] = 0:027 Pa and 0.093 Pa were obtained. At $V_f$, all the films exhibit a columnar structure, but the degree of inhomogeneity is decreased with the precursor partial pressure. Phase transformation from anatase ([TTIP] < 0.013 Pa) to amorphous ([TTIP+CG] = 0:093 Pa) has been evidenced since the $O^+_2$ ion to neutral flux ratio in the plasma was decreased and more carbon contained in the film. However, in the case of -50 V, the related growth rate for different precursor partial pressures is slightly (~15%) decreased. The columnar morphology at [TTIP] < 0.013 Pa has been changed into a granular structure, but still homogeneous columns are observed for [TTIP+CG] = 0:027 Pa and 0.093 Pa. Rutile phase has been generated at [TTIP] < 0:013 Pa. Ellipsometry measurements were performed on the films deposited at -50 V; results show that the precursor addition from low to high levels leads to a decrease in refractive index.

• Geomechanics and Engineering
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• v.29 no.4
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• pp.391-405
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• 2022

A newly proposed grouting simulation method, the sequential diffusion solidification method was introduced into the numerical simulation of combined bi-borehole grouting. The traditional, critical and difficult numerical problem for the temporal and spatial variation simulation of the slurry is solved. Thus, numerical simulation of grouting and blocking of flowing water in karst conduits is realized and the mechanism understanding of the combined bi-borehole technology is promoted. The sensitivity analysis of the influence factors of combined bi-borehole grouting was investigated. Through orthogonal experiment, the influences of proximal and distal slurry properties, the initial flow velocity of the conduit and the proximal and distal slurry injection rate on the blocking efficiency are compared. The velocity variation, pressure variation and slurry deposition phenomenon were monitored, and the flow field characteristics and slurry outflow behavior were analyzed. The interaction mechanism between the proximal and distal slurries in the combined bi-borehole grouting is revealed. The results show that, under the orthogonal experiment conditions, the slurry injection rate has the greatest impact on blocking. With a constant slurry injection rate, the blocking efficiency can be increased by more than 30% when using slurry with weak time-dependent viscosity behavior in the distal borehole and slurry with strong time-dependent viscosity behavior in the proximal borehole respectively. According to the results of numerical simulation, the grouting scheme of "intercept the flow from the proximal borehole by quick-setting slurry, and grout cement slurry from the distal borehole" is put forward and successfully applied to the water inflow treatment project of China Resources Cement (Pingnan) Limestone Mine.

• Journal of Sensor Science and Technology
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• v.32 no.5
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• pp.328-333
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• 2023

This study experimentally verified the etch rate of the SiO₂ sacrificial layer etching process with a single etch hole using vapor-phase hydrogen fluoride (VHF) etching. To fabricate small-sized polysilicon etch holes, both circular and triangular pattern masks were employed. Etch holes were fabricated in the polysilicon thin film on the SiO₂ sacrificial layer, and VHF etching was performed to release the polysilicon thin film. The lateral etch rate was measured for varying etch hole sizes and sacrificial layer thicknesses. Based on the measured results, we obtained an approximate equation for the etch rate as a function of the etch hole size and sacrificial layer thickness. The etch rates obtained in this study can be utilized to minimize structural damage caused by incomplete or excessive etching in sacrificial layer processes. In addition, the results of this study provide insights for optimizing sacrificial layer etching and properly designing the size and spacing of the etch holes. In the future, further research will be conducted to explore the formation of structures using chemical vapor deposition (CVD) processes to simultaneously seal etch hole and prevent adhesion owing to polysilicon film vibration.

• Journal of Hydrogen and New Energy
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• v.10 no.1
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• pp.59-69
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• 1999

AlN thin films were fabricated by reactive sputtering for the application of MIS devices with Al/AlN/Si structure. It has investigated the surface morphology change, I-V characteristics, C-V characteristics, and chemical composition of AlN films with the intriducing time of hydrogen on the fixed deposition condition(RF power: 150W, sputtering pressure: 5mTorr, flow rate ratio of $Ar/N_2=1$, hydrogen concentration: 5%). By addition of the hydrogen the deposition rate decreased drastically whereas the surface morphology changed little. It has been found from the analysis of I-V and C-V characteristics curves that the films deposited with hydrogen addition in initial stage had lower leakage current density, lower flat band voltage and hystersis profile when compared with those with hydrogen addition in last stage. The oxygen concentration in AlN films decreased with addition of hydrogen gas, which suggesting a profitable role in the insulation and C-V characteristics of AlN films.

• Journal of the Korean Vacuum Society
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• v.21 no.3
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• pp.178-184
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• 2012

Carbon coils could be synthesized on nickel catalyst layer-deposited silicon oxide substrate using $C_2H_2$ and $H_2$ as source gases and $SF_6$ as an additive gas under thermal chemical vapor deposition system. The characteristics (formation density and morphology) of as-grown carbon coils were investigated as functions of additive gas flow rate and the cycling on/off modulation of $C_2H_2/SF_6$ flows. Even in the lowest $SF_6$ flow rate (5 sccm) in this work, the cycling on/off modulation injection of $SF_6$ flow for 2 minutes could give rise to the formation of nanosized carbon coils, whereas the continuous injection of $SF_6$ flow for 5 minutes could not give rise to the carbon coils formation. With increasing $SF_6$ flow rates from 5 to 30 sccm, the cycling on/off modulation injection of $SF_6$ flow confines the geometry for the carbon coils to the nanosized ones. Fluorine's role of $SF_6$ during the reaction was regarded as the main cause for the confinement of carbon coils geometries to the nano-sized ones.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.5
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• pp.23-30
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• 2002

The PVDF (Polyvinylidene Fluoride) thin film having P phase is prepared by the vacuum deposition with applying the electric field and its pyroelectric properties are studied by using a dynamic method to examine the possibility of the application to the pyroelectric IR sensor. The pyroelectric responses of the PVDF thin film are characterized as the frequency dispersion in both low and high modulation frequency regions, and their frequency dependences are observed. In the low frequency region (2~10Hzz), the polarization can easily rotate with the increase of modulation frequency and show the maximum since the reorientation rate of domains is higher than the modulation frequency. On the other hand, in the high frequency region (100~1000Hz), the pyroelectric response decreases as the frequency increases, because the reorienatation rate of domains is suppressed and thus, the change of polarization decreases. Pyroelectric coefficient, figure of merits for noise equivalent power and detectivity of the PVDF thin film are measured as 3.2$\times$10$^{-10}$ C/$\textrm{cm}^2$.K, 2.34$\times$10$^{-10}$ C.cm/J and 1.32$\times$10$^{-9}$ C.cm/J, respectively. Also, the noise equivalent and the detectivity are 1.66$\times$10$^{-7}$ W/H $z^{$\sfrac{1}{2}$}$, 6.03$\times$10$^{5}$ cm.H $z^{$\sfrac{1}{2}$}$W, respectively.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.6
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• pp.43-49
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• 2000

The TiN thin films were deposited by ALE(atomic layer epitaxy) on (100) silicon substrate. The TiN thin films were characterized by means of XRD, 4-point probe, AFM, AES and SEM. TEMAT(terakis(ethyl methy lamino)titanium) and $NH_3$ were injected into the reactor in sequence of TEMAT-$N_2-NH_3-N_2$ to ensure a saturated surface reaction. As a result, the depostion rate of the TiN film was controlled by self-limiting growth mechanism at temperature range form 150 to 220 $^{\circ}C$. Deposited TiN films, all of which show amorphous structure, had a fixed deposition rate of 4.5 ${\AA}$/cycle. The resistivity of 210 ~ 230 ${\mu}{\Omega}{\cdot}$cm and the surface r.m.s. roughness of 7.9 ~ 9.3 ${\AA}$ were measured. When TiN film of 2000 ${\AA}$ were deposited, a excellent step coverage were observed in a trench structure of 0.43${\mu}m$ contacts with 6:1 aspect ratio.