• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1619-1621
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• 1994

Both Facing Target Sputtering(FTS) and Cylindrical Post-Magnetron Sputtering(CPMS) systems have been degigned in order to form high density plasma and to obtain high deposition rate. However, these two systems have some different applications, and discharge characteristics of these two systems are not well known. In this paper, the discharge characteristics and plasma parameters of both FTS and CPMS systems are studied experimentally. It is found that these two system show some different discharge characteristics under magnetic fields. The plasma density and electron temperature of these two systems are in the range of $10^{10}{\sim}10^{11}[cm^{-3}]$ and $3.5{\sim}5.5[eV]$, respectively.

• Journal of Surface Science and Engineering
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• v.31 no.2
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• pp.109-116
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• 1998

Highly transparent conductive pure and fluorine-doped tin oxide(FT0, $SnO_2$ : F) films have been prepared by low pressure metal organic chemical vapor deposition (LP-MOCVD) from various mixtures of tetramethyitin(TMT) with oxygen or oxygen containing ozone. The properties of TO films have been changed with the variation of gases, flow rate, and substrate temperature. The nsing of oxygen containing ozone instead of pure oxygen, reduced substrate temperature by 100-$150^{\circ}C$ while maintaining same thickness. The films prepared by using ozone showed the resistivity in the range from $10^~2$ to $10^{~3}\Omega$cm, and the mobiiity from 10 to $14\textrm{cm}^2$/Vs. Fluorine-doped tin oxide films had properties such as the resistivity about $10^{-4}\Omega$cm, and the mobility from 14 to $19\textrm{cm}^2$/Vs.

• Journal of Surface Science and Engineering
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• v.24 no.4
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• pp.206-214
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• 1991

In the basic study of selective electroless Ni plating of Si wafers, plating rate and physical properties are investigated to obtain optimum conditions of contact hole filling. Si wafers are excellently activated in the concentration of 0.5M IF, 1mM PdCl2, 2mM EDTA at $70^{\circ}C$, 90sec. The optimum condition of Ni-B deposition on p-type Si wafers is 0.1M NiSO4, 0.11M Citrate, $70^{\circ}C$, pH6.8, 8mM DMAB. The main factor in the sheet resistences variation of films is amorphous and on heat treating matrix was transformed into a stable phase (Ni+Ni3B) at $300-400^{\circ}C$. But pH or DMAB concentration in the plating solution doesn't play role of heat-affected phase change.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.6
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• pp.50-57
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• 1997

TiO$_{2}$ tin films have been grown by MOCVD and their cahracteristics of crystallization and microstructures ahve been invetigated. Envelope mehtods are applied to the analysis of the transmission spectra to obtain the optical constants such as refractive indices and extinction coefficients for the TiO$_{2}$ thin films. The envelope methods are proved to be accurate by simulatin gthe transmission spectra. TiO$_{2}$ thin films start to crystallize at 350.deg.C and then crystallize fully into anatase phase at 400.deg.C or higher temperatures. Activation energies are obtained by plotting the deposition rate with varying the substrate temperature. It is 17.8 kcal/mol for the reaction limited regions. The refractive index and the extinction coefficient of the TiO$_{2}$ thin film at .gamma.=632.8 nm increases from 2.19 to 2.32 and decreases from 0.021 to 0.007, respectively, as the substrate temperature increases from 400 to 600.deg. C.

• Proceedings of the KIEE Conference
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• 1998.07g
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• pp.2521-2523
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• 1998

Freestanding flexible microstructures fabricated from deposited thin films become mechanically unstable when internal stresses exceed critical values. The residual stress and stress gradient of aluminum thin film were examined to make sure of fabricating the reproduceable aluminium structure. For good shape of micro mirror array and microstructures, the experiment was done varying thickness and deposition rate. As the aluminium film thickness increased from 0.8${\mu}m$ to 1.6${\mu}m$, the stress gradient decreased from 11.62MPa/${\mu}m$ to 2.62MPa/${\mu}m$. The residual stress values are from 42.4MPa to 62.24MPa of tensile stresses.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.409-410
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• 2008

We studied dielectric properties of Organic Light-emitting Diodes(OLEDs) depending on applied voltage of AF(Amorphous Polytetrafluoroethylene), material of hole injection layer in structure of ITO/hole injection layer (AF)/Al. AF is deposited 5 [nm] as deposition rate of 0.1~0.2 [$\AA$/s] in high vacuum of $5\times10^{-6}$ [Torr]. In result of these studies, we can know dielectric properties of OLEDs. The impedance decreases as the applied voltage increases and the Cole-Cole plots of devices are decreases as the applied voltage increases.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.62 no.6
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• pp.782-785
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• 2013

Multi-walled carbon nanotubes were synthesized on Ni catalyst using thermal chemical vapor deposition. By introducing ammonia gas during the CNT synthesis process, clean and vertically aligned CNTs without impurities could be prepared. As the ammonia gas increased a partial pressure of hydrogen in the mixed gas during the CNT synthesis process, we could control the CNT synthesis rate appropriately. As the ammonia gas has an etching ability, amorphous carbon species covering the catalyst particles were effectively removed. Therefore catalyst particles could maintain their catalytic state actively during the synthesis process. Finally, we could obtain clean and vertically aligned CNTs by introducing $NH_3$ gas during the CNT synthesis process.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.557-559
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• 2009

We attempted modulation of hydrogen dilution ratio to achieve both the minimal incubation layer and high deposition rate. The incubation layer thickness was estimated by transmission electron microscopy (TEM) and crystallization fraction was measured by Raman spectroscopy.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.332-335
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• 2007

Electron injection improvement in OLED organic layers can be obtained by their doping or using alkaline-earth or alkali metals as electron injection layers (EIL). Common handling problems can be solved by an innovative metal dispensing technology to ensure controlled and reliable metal layers for OLED. Thickness and deposition rate of EIL during the process have been explored to optimize device performances.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.3
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• pp.478-484
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• 1994

Facing target dc sputtering system developed by Hoshi et al. has simple configuration and high deposition rate under moderate substrate temperature in the range of pressure 5x10S0-4T - 1x10S0-2T torr. In this system, magnetic field should be applied perpendicular to the target surface in order to confine high energy secondary electrons between two targets. Because of this magnetic field, the glow discharge characteristics are very different from dc planar diode system showing some unstable discharge region. In this paper, the glow discharge characteristics of this system have been studied under the condition of Ti targets with Ar-NS12T(10%) as working gas. It is found that this system has stable discharge region under the discharge current density of 15-30(mA/cmS02T). The plasma density and electron temperature are in the range of 10S010Y - 10S011T(CMS0-3T) and 2.5-5(eV), respectively.