• Korean Journal of Materials Research
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• v.11 no.6
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• pp.492-497
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• 2001

We report the characteristics and the dependence of sputter-deposited Ta films on the process parameters. The properties of as-deposited Ta films such as deposition rate, resistivity, Rs uniformity, reflectivity, and stress were investigated and analyzed as a function of process parameter using a statistical experimental method. The functional relationships between the independent and dependent variables were predicted by surface response. The optimal deposition condition of DC magnetron sputtered Ta films was obtained at the chamber pressure of 2 mTorr, power density of 8 W/$\textrm{cm}^2$, and substrate temperature of 2$0^{\circ}C$ by means of resistivity and Rs uniformity. The fitness value for quadratic model as evaluated by the R- square was 0.85~ 0.9 without pooling. The as-deposited Ta films exhibited the resistivity of ~180$\mu$$\Omega$cm with Rs uniformity of ~2%. The transmission electron microscopy and x-ray diffractometry identified that the phase of as-deposited film was $\beta$-Ta having the grain size of 100~200.

• Journal of the Korean Electrochemical Society
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• v.7 no.1
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• pp.16-20
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• 2004

To electropolymerize Polypyrrole(ppy) film modified with fullerene $ions(full^-)$ the cell, Au/5 mM pyrrole, 1mM fullerene, 0.1M $TBABF_4,\;CH_2Cl_2/Pt$, was employed to Prepare the wafer-like type of $electrode/ppy(full^-)ppy(full^-){\ldots}$ electrodes. They were applied to deposit alkali metal ions with the cell of Au(quartz crystal analyzer; QCA)/ppy$(full^-)$, 0.01M metal ion(aq.)/Pt. The depositing rate constant of each ion for $Li^+,\;Na^+,\;K^+,\;Rb^+\;and\;Cs^+$, determined from the first order equation was $1.60\times10^{-8},\;3.13\times10^{-11},\;1.38\times10^{-9},\;2.71\times10^{-11}\;and\;2.98\times10^{-12}mo1.s^{-1}$ respectively. The calculated stoichiometry of the ions determined by quartz crystal microbalance(QCM) at the electrodes was $Li_7C_{60},\;Na_4C_{60},\;K_3C_{60},\;Rb_1C_{60}\;and\;Cs_1C_{60}$ respectively.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.2
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• pp.55-59
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• 2012

Defects such as voids or seams are frequently found in TSV via filling process. To achieve defect-free copper via filling, organic additives such as suppressor, accelerator and leveler were necessary in a copper plating bath. However, by-products stemming from the breakdown of these organic additives reduce the lifetime of the devices and plating solutions. In this research, the effects of levelers on copper electrodeposition were investigated without suppressor and accelerator to lower the concentration of additives. Threelevelers(janus green B, methylene violet, diazine black) were investigated to study the effects of levelers on copper deposition. Electrochemical behaviors of these levelers were different in terms of deposition rate. Filling performances were analyzed by cross sectional images and its characteristics were different with variations of levelers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.52-53
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• 2005

$Y_2O_3$ film was directly deposited on Ni-3at%W substrate using DC reactive sputtering technique. Metallic yttrium was used for DC sputtering target and water vapor was used for oxidizing the deposited metallic Yttrium atoms on the substrate. The window of the water vapor turned out to be broad. The minimum partial pressure of water vapor was determined by sufficient oxidation of the $Y_2O_3$ film, and the maximum partial pressure of water vapor was determined by the non-oxidation of the target surface. As the sputtering power was increased, The deposition rate increased without narrowing the window. The fabricated $Y_2O_3$ films showed good texture qualities and surface morphologies. The YBCO film deposited directly on the $Y_2O_3$ buffered Ni-3at%W substrate showed $T_c$, $I_c$ (77 K, self field), and $J_c$ (77 K, self field) of 89 K, 64 A/cm and 1.l $MA/cm^2$, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.2
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• pp.101-106
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• 2009

In this paper, Thin films of $HfO_2$/Hf were deposited on p-type wafer by Atomic Layer Deposition (ALD). We studied the electrical and material characteristics of $HfO_2$/Hf/Si MOS capacitor depending on thickness of Hf metal layer. $HfO_2$ films were deposited using TEMAH and $O_3$ at $350^{\circ}C$. Samples were then annealed using furnace heating to $500^{\circ}C$. Round-type MOS capacitors have been fabricated on Si substrates with $2000\;{\AA}$-thick Pt top electrodes. The composition rate of the dielectric material was analyzed using TEM (Transmission Electron Microscopy), XRD (X-ray Diffraction) and XPS (X-ray Photoelectron Spectroscopy). Also the capacitance-voltage (C-V), conductance-voltage (G-V), and current-voltage (I-V) characteristics were measured. We calculated the density of oxide trap charges and interface trap charges in our MOS device. At the interface between $HfO_2$ and Si, both Hf-Si and Hf-Si-O bonds were observed, instead of Si-O bond. The sandwiched Hf metal layer suppressed the growing of $SiO_x$ layer so that $HfSi_xO_y$ layer was achieved. And finally, the generation of both oxide trap charge and interface trap charge in $HfO_2$ film was reduced effectively by using Hf metal layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.486-487
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• 2007

$Bi_2Sr_2Ca_{n-1}Cu_nO_x$(n=0, 1, 2) thin films have been fabricated by co-deposition at an ultra-low growth rate using ion beam sputtering(IBS) method. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was between 655 and $820^{\circ}C$ and the highly condensed ozone gas pressure in vacuum chamber was varied between $2{\times}10^{-6}{\sim}4{\times}10^{-5}$ Torr. Bi 2212 phase appeared in the temperature range of 750 and $795^{\circ}C$ and single phase of Bi 2201 existed in the lower region than $785^{\circ}C$. Whereas, $PO_3$ dependance on structural formation was scarcely observed regardless of the pressure variation.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.6
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• pp.1115-1121
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• 2007

[ $Bi_2Sr_2Ca{_{n-1}}Cu_nO_x$ ](n=0,1,2) thin fans have been fabricated by co-deposition at an ultra-low growth rate using ion beam sputtering(IBS) method. Bi 2212 phase appeared in the temperature range of 750 and $795^{\circ}C$ and single phase of Bi 2201 existed in the lower region than $785^{\circ}C$. Whereas, $PO_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with $T_c$(onset) of about 90 K and $T_c$(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as $CaCuO_2$ was observed in all of the obtained films.

• Journal of Industrial and Engineering Chemistry
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• v.68
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• pp.161-167
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• 2018

In this study, transition metal coated carbon nanofibers (CNFs) were synthesized and applied as anode materials of Li secondary batteries. CNFs/Ni foam was immersed into 0.01 M transition metal solutions after growing CNFs on Ni foam via chemical vapor deposition (CVD) method. Transition metal coated CNFs/Ni foam was dried in an oven at $80^{\circ}C$. Morphologies, compositions, and crystal quality of CNFs-transition metal composites were characterized by scanning electron microscopy (SEM), Raman spectroscopy (Raman), and X-ray photoelectron spectroscopy (XPS), respectively. Electrochemical characteristics of CNFs-transition metal composites as anodes of Li secondary batteries were investigated using a three-electrode cell. Transition metal/CNFs/Ni foam was directly employed as a working electrode without any binder. Lithium foil was used as both counter and reference electrodes while 1 M $LiClO_4$ was employed as the electrolyte after it was dissolved in a mixture of propylene carbonate:ethylene carbonate (PC:EC) at 1:1 volume ratio. Galvanostatic charge/discharge cycling and cyclic voltammetry measurements were taken at room temperature using a battery tester. In particular, the capacity of the synthesized CNFs-Fe was improved compared to that of CNFs. After 30 cycles, the capacity of CNFs-Fe was increased by 78%. Among four transition metals of Fe, Cu, Co and Ni coated on carbon nanofibers, the retention rate of CNFs-Fe was the highest at 41%. The initial capacity of CNFs-Fe with 670 mAh/g was reduced to 275 mAh/g after 30 cycles.

• Tribology and Lubricants
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• v.34 no.6
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• pp.241-246
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• 2018

This research addresses the improvement of tribo-systems, specifically regarding the reduction of friction and wear through tribo-coupling between tetrahedral amorphous carbon (ta-C) with different types of counterpart materials, namely bearing steel (SUJ2), tungsten carbide (WC), stainless steel (SUS304), and alumina ($Al_2O_3$). A second variable in this project is the utilization of different values of duct bias voltage in the deposition of the ta-C coating - 0, 5, 10, 15, and 20 V. The results of this research are expected to determine the optimum duct bias and best counter materials associated with ta-C to produce the lowest friction and wear. Results obtained reveal that the tribo-couple between the ta-C coating and SUJ2 balls produces the lowest friction coefficient and wear rate. In terms of duct bias changes, deposition using 5 V produces the most optimum tribological behavior with lowest friction and wear on the tribo-system. In contrast, the tribo-couple between ta-C with a WC ball causes penetration through the coating surface layer and hence high surface delamination. This study demonstrates that the most effective ta-C coating duct bias is 5 V associated with SUJ2 counter material to produce the lowest friction and wear.

• Journal of Surface Science and Engineering
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• v.55 no.2
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• pp.102-119
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• 2022

Gold plating is used as a coating of connecter in printed circuit boards, ceramic integrated circuit packages, semiconductor devices and so on, because the film has excellent electric conductivity, solderability and chemical properties such as durability to acid and other chemicals. As increasing the demand for miniaturization of printed circuit boards and downsizing of electronic devices, several types of electroless gold plating solutions have been developed. Most of these conventional gold plating solutions contain cyanide compounds as a complexing agent. The gold film obtained from such baths usually satisfies the requirements for electronic parts mentioned above. However, cyanide bath is highly toxic and it always has some possibility to cause serious problems in working environment or other administrative aspects. The object of this investigation was to develop a cyanide-free electroless gold plating process that assures the high stability of the solution and gives the excellent solderability of the deposited film. The investigation reported herein is intended to establish plating bath composition and plating conditions for electroless gold plating, with thiomalic acid as a complexing agent. At the same time, we have investigated the solution stability against nickel ion and pull strength of solder ball. Furthermore, by examining the characteristics of the plated Au plating film, the problems of the newly developed electroless Au plating solution were improved and the applicability to various industrial fields was examined. New type electroless gold-plating bath which containing thiomalic acid as a complexing agent showing so good solution stability and film properties as cyanide bath. And this bath shows the excellent stability even if the dissolved nickel ion was added from under coated nickel film, which can be used at the neutral pH range.