• 한국대기환경학회지
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• 제19권5호
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• pp.551-560
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• 2003

Particle deposition in human lungs was investigated theoretically by using asymmetric five-lobe lung model. The volumes of each of the five lobes were different, thereby forming an asymmetric lung structure. The tidal volume and flow rate of each lobe were scaled according to lobar volume. The total and regional deposition with various breathing patterns were calculated by means of tracking volume segments and accounting for particle loss during inhalation and exhalation. The deposition fractions were obtained for each airway generation and lung lobe, and dominant deposition mechanisms were investigated for different size particles. Results show that the tidal volume and flow rate have a characteristic influence on particle deposition. The total deposition fraction increases with an increase in tidal volume for all particle sizes. However, flow rate has dichotomous effects: a higher flow rate results in a sharp increase in deposition for large size particles, but decreases deposition for small size particles. Deposition distribution within the lung shifts proximally with higher flow rate whereas deposition peak shifts to the deeper lung region with larger tidal volume. Deposition fraction in each lobe was proportional to its volume. Among the three main deposition mechanisms, diffusion was dominant for particles < 0.5 ${\mu}{\textrm}{m}$ whereas sedimentation and impaction were most influential for larger size particles. Impaction was particularly dominant for particles> 8 ${\mu}{\textrm}{m}$. The results may prove to be useful for estimating deposition dose of inhaled pollutant particles at various breathing conditions.

• 대한기계학회논문집
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• 제19권11호
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• pp.3063-3071
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• 1995

An experimental study has been carried out for the heat transfer and particle deposition during the Outside Vapor Deposition process. The surface temperatures of deposited layers, and the rates, efficiencies and porosities of particle deposition were measured. It is shown that the axial variation of the surface temperature can be assumed to be quasi-steady and that as the traversing speed of burner is increased, the deposition rate, efficiency and porosity increase due to the decreased surface temperature. As the flow rate of the chemicals is increased, both the thickness of deposition layers and the surface temperature increase. Deposition rate also increases, however, deposition efficiency decreases for tests done. Later passes in early deposition stage result in higher surface temperatures due to increased thickness of porous deposited layers, which cause the deposition rate, efficiency, and porosity to decrease.

• 한국재료학회지
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• 제9권2호
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• pp.144-148
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• 1999

We have studied the deposition characteristics of thick silicon dioxide film on Si substrate by $O_3$/TEOS APCVD(Atmospheric Pressure Chemical Vapor Deposition). The effect of deposition parameters such as the distance between showerhead and substrate, deposition temperature, TEOS flow rate and $O_3$/TEOS ratio on deposition rate, surface morphology, and properties of films as investigated. As deposition temperature increased, deposition rate decreased but the surface morphology and adhesion of film to substrate improved. As the distance between showerhead and substrate decreased, the deposition rate increased. Etching rate using the BOE increased as TEOS flow rate increased, but was independent of$ O_3$/TEOS ratio. Deposition rate of $5\mu\textrm{m}$/hour was obtained under the condition that the distance between showerhead and substrate was 5mm and the deposition temperature was $370^{\circ}C$.

• 전자공학회논문지A
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• 제30A권12호
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• pp.69-76
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• 1993

The statistical methodology using RSM (response surface method) was used too ptimize the deposition conditions of selective CVD tungsten process for improving the deposition rate and the adhesion property. Temperature, flow rate of SiH$_4$ and WF$_6$ and H$_2$ and Ar carrier gases were chosen for the deposition variables and process characteristics due to carrier gas were intensively investigated. It was observed that temperature was the main factor influencingthe deposition rate in the case of H$_2$ carrier gas while the reactant ratio, $SiH_{4}/WF_{6}$, had the principal effect on the deposition rate in the case of Ar carrier gas. The increased deposition rate and the good adhesion to Si were obtained under Ar carrier gas compared to H$_2$ carrier gas. The optimum conditions for deposition rate and antipeeling property were found to be the temperature range of 300~32$0^{\circ}C$ and the reactant ratio, $SiH_{4}/WF_{6}$, of 0.5~0.6.

• 한국표면공학회지
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• 제19권3호
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• pp.109-120
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• 1986

The electroless nickel plating on high alumina ceramics was performed in the bath containing nickel chloride, sodium hypophosphite and mono- or bi-carboxylic acid as a complexing agent in order to examine the empirical rate law as well as the effects of the complexing agent, plating temperature and pH on the rate of deposition. Adding the carboxylic acid to the plating bath, the rate of deposition was increased considerably, and each of the complexing agents showed a maximum deposition rate plateau around a particular concentration of the complexing agent. The rate of deposition was increased with increasing either temperature or pH, but microstructure of the surface became more rough. Furthermore, empirical rate law of the elecltroless nickel deposition on high alumina ceramics was discussed with the activation energy and other rate parameters calculated.

• 한국세라믹학회지
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• 제31권2호
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• pp.206-212
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• 1994

Effects of the film deposition process parameters on the properties such as deposition rate, etch rate, refractive index, stress and step coverage of plasma enhanced chemical vapor deposited (PECVD) tetraethylorthosilicate glass (TEOS) SiO2 film were investigated and analysed using SEM, FTIR and SIMS techniques. Increasing TEOS flow or decreasing O2 flow increased the deposition rate and the compressive stress of the oxide film but produced a less denser film. The deposition rate decreased owing to the decrease in the sticking coefficient of the TEOS and the O2 molecules onto the substrate Si with increasing the substrate temperature. Increasing the substrate temperature produced a denser film with a lower etch rate and the higher refractive index by lowering SiOH and moisture contents. Increasing the rf power increases the ion bombardment energy. This increase in energy, in turn, increases the deposition rate and tends to make the film denser. No appreciable changes were found in the deposition rate but the refractive index and the stress of the film decreased with increasing the deposition pressure. The carbon content in the plasma TEOS CVD oxide film prepared under our standard deposition conditions were very low according to the SIMS analysis results.

• 열처리공학회지
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• 제29권2호
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• pp.62-65
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• 2016

TIO thin films were deposited on the poly-carbonate substrates with RF magnetron sputtering under different sputtering power condition to investigate the influence of deposition rate on the electrical and optical properties of the films. Although, all films have the similar carrier concentration, the films prepared at a lower deposition rate of 4 nm/min show a higher mobility of $5.96cm^2\;V^{-1}S^{-1}$ due to the low surface roughness. In addition, optical transmittance is also influenced by a deposition rate. Based on the figure of merit, it can be concluded that the lower deposition rate effectively enhances the opto-electrical performance of IGZO films for use as transparent conducting oxides in flexible display applications.

• 한국표면공학회지
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• 제36권4호
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• pp.317-323
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• 2003

The effect of additives such as complexing agents, stabilzers and boric acid on the bath stability and the deposition rate of electroless black Ni-Zn plating has been examined. The deposits obtained became black and showed an amorphous structure. The significant increasing in the deposition rate was not found when only glycine and citric acid were used as complexing agents. The deposition rate increased up to 3 and 4 times by adding malic acid and glycolic acid as an additional complexing agent, respectively. The stabilizers and the boric acid, however, had little influence on the deposition rate.

• 대한기계학회논문집B
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• 제22권5호
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• pp.563-572
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• 1998

An experimental study of hot filament chemical vapor deposition(HFCVD) has been carried out for the fabrication of diamond thin film. Of particular interest is the measurement of deposition uniformity on large substrates. Experimental apparatus including a vacuum chamber, heating elements, etc. has been designed and manufactured. Deposition profiles for different pretreatment powders and different flow rates have been measured in conjunction with the measurement of substrate temperature distribution on a large substrate surface. As the flow rate increases, deposition rate increases, however, the crystallinity becomes worse. Higher growth rate has been found on the region closer to the center location where substrate temperature is higher. The crystallinity has been improved as gas flow rate decreases. The growth rate and morphology of deposition were identified by SEM and the existence of diamond phase was proved by Raman spectroscopy.

• 설비공학논문집
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• 제12권2호
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• pp.113-119
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• 2000

An experimental study has been carried out in order to investigate on a particle deposition on a circular cylinder surface. The present study is focused on the particulate fouling occurring in a heat exchanger for a seawater desalinization, in a laminar flow over circular cylindrical tubes. The objective is to investigate how NaCl concentration influences the $SiO2$ particle deposition on the surface of a glass circular cylinder. The NaCl concentration was changed from 0 g/L to 40 g/L. As the experimental results of $SiO2$ particle which is deposited on the glass circular cylinder surface showed, particle deposition rate per unit time increases rapidly with the increase of NaCl concentration between 0 g/L and 15 g/L. After the maximum of particle deposition rate was found at the NaCl concentration of 15 g/L, particle deposition rate remains unchanged or decreases gradually with the NaCl concentration from 15 g/L to 40 g/L. Also the $SiO2$ deposition rate of particles does not have serious variations with the position at present glass surface.