• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.171-171
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• 2009

We have investigated the impact of coffee ring effect on the inkjet-printed $Al_2O_3$ thick films. In a single solvent system such as Dimethylformamide, the coffee-ring-pattern has appeared on the edge of sessile drop after evaporation. The peak-to-valley height difference in $Al_2O_3$ coffee ring is over 2um. This non-uniform deposition of $Al_2O_3$ over the surface leads to sever surface roughness of the inkjet-printed films. However, we have manipulated our printing parameters to improve the surface roughness and the packing density of the printed $Al_2O_3$ films. Our inkjet-printed $Al_2O_3$ films show 10 times smoother surface than the initially printed sample's surface. Also the packing density of the printed Ah03 film becomes 70% of high packed $Al_2O_3$. In this presentation, we would like to present the key process parameters of the inkjet printing process to overcome the genetic coffee ring problem.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.192-192
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• 2009

We have successfully demonstrated the inkjet printing process to fabricate $Al_2O_3$ thick films without a high temperature sintering process. A single solvent system had a coffee ring pattern after printing of $Al_2O_3$ dot, line and area. In order to fabricate the smooth surface of $Al_2O_3$ thick film, we have introduced a co-solvent system which has nano-sized $Al_2O_3$ powders in the mixture of Ethylene glycol monomethyl ester and Di propylene glycol methyl ether. This co-solvent system approached a uniform and dense deposition of $Al_2O_3$ powders on the substrate. The packing density of inkjet-printed $Al_2O_3$ films is more than 70% which is very high compared to the value obtained from the films synthesized by other conventional methods such as casting processes. The characterization of the inkjet-printed $Al_2O_3$ films has been implemented to investigate its thickness and roughness. Also the dielectric loss of the films has been measured to understand the feasibility of its application to 3D integration package substrate.

• 한국신재생에너지학회:학술대회논문집
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• 2007.06a
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• pp.250-253
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• 2007

An evaporated Ti/Pd/Ag contact system is most widely used to make high-efficiency silicon solar cells, however, the system is not cost effective due to expensive materials and vacuum techniques. Commercial solar cells with screen-printed contacts formed by using Ag paste suffer from a low fill factor and a high shading loss because of high contact resistance and low aspect ratio. Low-cost Ni and Cu metal contacts have been formed by using electroless plating and electroplating techniques to replace the Ti/Pd/Ag and screen-printed Ag contacts. Ni/Cu alloy is plated on a silicon substrate by electro-deposition of the alloy from an acetate electrolyte solution, and nickel-silicide formation at the interface between the silicon and the nickel enhances stability and reduces the contact resistance. It was, therefore, found that nickel-silicide was suitable for high-efficiency solar cell applications. The Ni contact was formed on the front grid pattern by electroless plating followed by anneal ing at $380{\sim}400^{\circ}C$ for $15{\sim}30$ min at $N_{2}$ gas to allow formation of a nickel-silicide in a tube furnace or a rapid thermal processing(RTP) chamber because nickel is transformed to NiSi at $380{\sim}400^{\circ}C$. The Ni plating solution is composed of a mixture of $NiCl_{2}$ as a main nickel source. Cu was electroplated on the Ni layer by using a light induced plating method. The Cu electroplating solution was made up of a commercially available acid sulfate bath and additives to reduce the stress of the copper layer. The Ni/Cu contact was found to be well suited for high-efficiency solar cells and was successfully formed by using electroless plating and electroplating, which are more cost effective than vacuum evaporation. In this paper, we investigated low-cost Ni/Cu contact formation by electroless and electroplating for crystalline silicon solar cells.

• Journal of Korean Society for Atmospheric Environment
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• v.16 no.5
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• pp.487-497
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• 2000

Spring time is a favorable season to be easily observed the Yellow Sand phenomenon in East Asia. In particular most of the phenomenon tend to occur in April. However, Yellow Sand phenomenon was observed from almost the whole country of Korea in winter of 1966, 1977 and 1999. The features of the synoptic weather pattern in the source regions, air stream flow between the source region and Korea, the measurement of TSP concentration, aerosol size distribution, and chemical composition of snow samples associated with Yellow Sand phenomenon were investigated. The result showed the characteristic evolutionary feature of the synoptic system associated with Yellow Sand phenomena, that is, a strong low level wind mobilized the dust within 2 or 3 days before Yellow Sand phenomenon being observed in Seoul. The wind was remarkably intensified in the source region on January 24, 1999 under the strong pressure gradient, A trajectory analysis showed that the Yellow Sand particle could be reached to Korea within 2 days from the source region, Gobi desert, through Loess plateau and Loess deposition region. The TSP concentration at the top of Kwanak mountain during the Yellow Sand phenomenon is abruptly increasing than the monthly mean concentration. The size resolved number concentration of aerosols ranging from 0.3 to 25${\mu}{\textrm}{m}$ was analyzed during Yellow Sand episode. It was evident that aerosols were distinguished by particles in the range of 2-3 ${\mu}{\textrm}{m}$ to result in the abrupt increase in January 1999, After Yellow Sand phenomenon, there was heavy snow in Seoul. By the analysis of snow collected during that time, it was observed that both the Ca(sup)2+ concentration and pH were increased abnormally compared to those in the other winter season.

• The Journal of the Korea Contents Association
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• v.15 no.8
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• pp.544-555
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• 2015

This study aims to derivate of the relationship and rating curve for the flow discharge-total sediment using the measured field data from the main points of small-medium stream reaches in agrarian basin. The total sediment of measured data are obtained by bed load added to suspended load which analyzed using the particle size distribution curve of sieve test and the dry or the filtration method from the collected samples by samplers (DH-48, D-74 and BLH-84, BL-84) at the stream bed and the depth-averaged concentration, respectively. These field data had been collected from August 2012 to September 2014 at the seven measuring stations of the national-local channel reaches of the four study streams in the Nonsan river systems of agrarian basin. As a result, the relationships and the rating curve for the flow discharge-total sediment are derived as a function pattern of power law by analyzing on a distribution characteristic of the database set and it will be used as a useful tool to analyze erosion, deposition, and transportation in theoretical research as well as in practical application of the hydraulic sedimentation engineering.

• Environmental Analysis Health and Toxicology
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• v.11 no.3_4
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• pp.23-32
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• 1996

In this study, we investgated the uptake capacity of several water plants for heavy metals (lead and cadmium) in soil of rivers where are adjacent to a industrial complex in Chun-An city and in A-San city. We also examined the deposition pattern of heavy metal in plants. The results are as follows: 1. The soil of river in Chun-An city was polluted more serious than that of A-San city. In Chun-An city, mean values of lead and cadmium contents in soil were 26.224 $\pm$ 28.037 $\mu$g/g, and 0.854 $\pm$ 1. 127 $\mu$g/g, respectively. 2. Water plants examined in this study were Slum suave KITAGAWA, Persicaria thunbergii H. GROSS, Phragmiles japonica STEUD, Echinochloa crus-galli var. frumentacea WIGHT and Persicaria hydropiper SPACH. Both metal contents of several water plants distributed in Chun-An city were higher than those in A-San city. In these plants, Slum suave showed the highest uptake capacity for lead and cadmium. The mean values of lead and cadmium contents in Slum suave were 40.957 $\pm$ 29.577 $\mu$g/g and 1. 930 $\pm$ 1. 076 $\mu$g/g, respectively. Persicaria thunbergii also showed a relatively high uptake capacity for both metal. 3. Correlation between metal contents in soil and water plants was high. In both cases of Sium suave and Persicaria thunbergii correlation coefficients were 0.605 and 0.549, respectively. 4. We analyzed lead and cadmium contents in root, stem and leaf of several water plants. Both metals were mostly deposited in root. Much of both metals were also deposited in leaf. From the results, we suggest that Slum suave KITAGAWA and Persicaria thunbegii H. GROSS can be used to reduce heavy metals from industrial waste water.

• Korean Journal of Materials Research
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• v.20 no.9
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• pp.457-462
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• 2010

Adsorption of a water molecule on a Si (001) surface and its dissociation were studied using density functional theory to study the distribution of -OH fragments on the Si surface. The Si (001) surface was composed of Si dimers, which buckle in a zigzag pattern below the order-disorder transition temperature to reduce the surface energy. When a water molecule approached the Si surface, the O atom of the water molecule favored the down-buckled Si atom, and the H atom of the water molecule favored the up-buckled Si atom. This is explained by the attractions between the negatively charged O of the water and the positively charged down-buckled Si atom and between the positively charged H of the water and the negatively charged up-buckled Si atom. Following the adsorption of the first water molecule on the surface, a second water molecule adsorbed on either the inter-dimer or intra-dimer site of the Si dimer. The dipole-dipole interaction of the two adsorbed water molecules led to the formation of the water dimer, and the dissociation of the water molecules occurred easily below the order-disorder transition temperature. Therefore, the 1/2 monolayer of -OH on the water-terminated Si (001) surface shows a regular distribution. The results shed light on the atomic layer deposition process of alternate gate dielectric materials, such as $HfO_2$.

• Maxillofacial Plastic and Reconstructive Surgery
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• v.23 no.3
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• pp.205-211
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• 2001

Cleft palate is one of the most serious congenital anomalies in human that causes a sucking problem in newborn babies and morphologic deformity that usually leads to death in newborn mouse offspring due to an insufficient ability to suck milk. Therefore cleft palate had been researched with epidemiologic and molecular methods, and many etiologic factors were examined closely. Among of the research methods, biologic molecule researches have been more important method for cleft palate formation study. The $TGF-{\beta}$ had an important role in the cell migration, epithelial-mesenchymal transdifferentiation, extracellular matrix synthesis and deposition. But there was a little research which was study about correlation cleft palate induced by beta-aminonitroproprionitrile(BAPN) with $TGF-{\beta}$ expression. A purpose of this presented study was examed how $TGF-{\beta}$ expression in cleft palate mice. At gestation days 13, BAPN-monofumarate salts($(C_3H_6N_2)_2$ ${\cdot}$ $C_4H_4O_4$, Sigma Co.) was single oral administered to 4 pregnant rats according to 1g/kg body weight. And pregnant rats were sacrificed on day 20 post coitus(p.c.), The $TGF-{\beta}$ expression patterns of cleft formed fetus mice was followed that; 1.Osteoblast, mesenchymal cell and epithelial cell of cleft mice were low expression compare to control mice. 2.There was no $TGF-{\beta}$ difference expression pattern of osteocyte of cleft mice compare to control mice. 3. In western blot analysis, thickness of band of $TGF-{\beta}$ in cleft mice was thin and dilute compare to control mice.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.723-727
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• 2003

[ $Sr_xBa_{1-x}Nb_2O_6$ ] (SBN, $0.25{\leq}x{\leq}0.75$) ceramic is a ferroelectric material with tetragonal tungsten bronze (TTB) type structure, which has a high pyroelectric coefficient and a nonlinear electro-optic coefficient value. In spite of its advantages, SBN has not been investigated well compared to other ferroelectric materials with perovskite structure. In this study, SBN thin film was manufactured by ion beam sputtering technique using the prepared SBN target in $Ar/O_2$ atmosphere. SBN30 thin film of $1000{\AA}$ was pre-deposited as a seed layer on $Pt(100)/TiO_2/SiO_2/Si$ substrate followed by SBN60 deposition up to $3000{\AA}$ in thickness. As-deposited SBN60/SBN30 layer was heat-treated at different temperatures of 650, 700, 750, and $800^{\circ}C$ in air, respectively The crystallinity and orientation behavior as well as electric properties of SBN60/SBN30 multi-layer were examined. The deposited layer was uniform and the orientation was shown primarily along (001) plane from XRD pattern. There was no difference in the crystal structure with heat-treatment temperature, but the electric properties depended on the heating temperature and was the best at $750^{\circ}C$. In electric properties of Pt/SBN60/SBN30/Pt thin film capacitor prepared, the remnant polarization (2Pr) value was $15{\mu}C/cm^2$, the coercive field (Ec) 75 kV/cm, and the dielectric constant 1075, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.869-873
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• 2004

[ $Sr_xBa_{1-x}Nb_2O_6$ ] (SBN, $0.25{\leq}x{\leq}0.75$) ceramic is a ferroelectric material with tetragonal tungsten bronze (TTB) type structure, which has a high pyroelectric coefficient, piezoelectric, and a photo refractive properties. In this study, SBN60(x=0.6) thin film was manufactured by ion beam sputtering technique. Using the prepared SBN60 target in $Ar/O_2$ atmosphere as-deposited SBN60 thin film on Pt(100)/$TiO_2/SiO_2/Si$ substrate crystallization and orientation behavior as well as electric properties of SBN60 thin film were examined. SBN60 deposition up to $3000{\AA}$ in thickness, SBN60 thin film was heat-treated at $650^{\circ}C{\sim}800^{\circ}C$. The orientation was shown primarily along (001) plane from XRD pattern where working pressure was $4.3{\times}10^{-4}$ torr. The deposited layer was uniform, preferred orientatin and crystallization behavior resulted in the change of $O_2$ ratio was observed. In electric propertie of Pt/SBN60/Pt thin film capacitor remnant polarization (2Pr) value was $10{\mu}C/cm^2$, the coercive filed (Ec) 50 kV/cm, and the dielectric constant 615, respectively.