• Journal of the Korean Ceramic Society
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• v.34 no.3
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• pp.249-256
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• 1997

The effect of process parameter of plasma assisted chemical vapor deposition (PACVD) on the variation of the ratio between cubic boron nitride (c-BN) and hexagonal boron nitride (h-BN) in the film was in-vestigated. The plasma was generated by electric power with the frequency between 100 and 500 KHz. BCl3 and NH3 were used as a boron and nitrogen source respectively and Ar and hydrogen were added as a car-rier gas. Films were composed of h-BN and c-BN and its ratio varied with the magnitude of process parameters, voltage of the electric power, substrate bias voltage, reaction pressure, gas composition, sub-strate temperature. TEM observation showed that h-BN phase was amorphous while crystalline c-BN par-ticle was imbedded in h-BN matrix in the case of c-BN and h-BN mixed film.

• Journal of the Korean Society for Heat Treatment
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• v.7 no.4
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• pp.288-297
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• 1994

In this study, lattice parameter, binding energy and microstructures of TiC layer according to the addition of Fe, Cr were investigated in the reactive deposition coating. From the results, the lattice parameters of the TiC layers by using ferro-titanium as a precursor were 4.329~4.339A but the lattice parameters of the TiC layers formed by ferro-titanium and ferro-chromium decreased to 4.316~4.330A. The hardness of the former's was HV(100g) 3,000~3,400kg/mm and the hardness of the latter's was HV (100g) 3,800~3,900. But, regardless of Cr and Fe, the binding energy of TiC layers were 454.75 eV for $Ti2p_{3/2}$ and were 281.85 eV for Cls. Meanwhile, the TiC layers were densified by addition of Fe, Cr and internal defects were reduced Therefore. it can be concluded that the remarkable hardness increment was obtained by the improvement of microstructures of TiC rather than the increase of bond strength or Peierls stress.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.383-386
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• 2002

Polycrystalline Cu(In,Ga)Se$_2$(CIGS) thin-films were grown by co-evaporation on a soda lime glass substrate. In this paper the effects of the Se evaporation temperature on the properties of CuIn0.75Ga0.25Se2 (CIGS) thin films. Structure, surface morphology and optical properties of CIGS thin films deposited at various Se evaporation temperatures have been investigated using a number of analysis techniques. X-ray diffraction (XRD) analysis shows that CIGS films exhibit a strong <112> preferred orientation. As expected, at higher Se evaporation temperatures the films displayed a lower degree of crystallinity. The <112> peak was also enhanced and other CIGS peaks appeared simultaneously. These results were supported by experimental work using scanning electron microscopy When the Se evaporation temperature was increased, the average grain size also decreased together with a reduction Cu content. The Se evaporation temperature also had a significant inf1uence on the transmission spectra. Increasing the Se evaporation temperature, the cell efficiency was improved dramatically to 11.75% with Voc = 556 mV, Jsc = 32.17 mA/cm2 and FF = 0.66. The Se evaporation temperature is an important parameter in thin film deposition regardless of the deposition technique being used to deposit thin films

• Carbon letters
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• v.14 no.4
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• pp.210-217
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• 2013

The synthesis of carbon nanomaterials (CNMs) by a chemical vapor deposition method using three different plant oils as precursors is presented. Because there are four parameters involved in the synthesis of CNM (i.e., the precursor, reaction temperature of the furnace, catalysts, and the carrier gas), each having three variables, it was decided to use the Taguchi optimization method with the 'the larger the better' concept. The best parameter regarding the yield of carbon varied for each type of precursor oil. It was a temperature of $900^{\circ}C$ + Ni as a catalyst for neem oil; $700^{\circ}C$ + Co for karanja oil and $500^{\circ}C$ + Zn as a catalyst for castor oil. The morphology of the nanocarbon produced was also impacted by different parameters. Neem oil and castor oil produced carbon nanotube (CNT) at $900^{\circ}C$; at lower temperatures, sphere-like structures developed. In contrast, karanja oil produced CNTs at all the assessed temperatures. X-ray diffraction and Raman diffraction analyses confirmed that the nanocarbon (both carbon nano beads and CNTs) produced were graphitic in nature.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2000.04a
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• pp.109-109
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• 2000

Recently, carbon nanotube has been investigating for field emission display ( (FED) applications due to its high electron emission at relatively low electric field. However, the growing of carbon nanotube generally requires relatively high temperature processing such as arc-discharge (5,000 ~ $20,000^{\circ}C$) and laser evaporation (4,000 ~ $5,000^{\circ}C$) methods. In this presentation, low temperature growing of carbon nanotube by plasma enhanced chemical vapor deposition (PECVD) using nickel catalyst which is compatible to conventional FED processing temperature will be described. Carbon n notubes with average length of 100 run and diameter of 2 ~ $3\mu$ill were successfully grown on silicon substrate with native oxide layer at $550^{\circ}C$using nickel catalyst. The morphology and microstructure of carbon nanotube was highly depended on the processing temperature and nickel layer thickness. No significant carbon nanotube growing was observed with samples deposited on silicon substrates without native oxide layer. This is believed due to the formation of nickel-silicide and this deteriorated the catalytic role of nickel. The formation of nickel-silicide was confirmed by x-ray analysis. The role of native oxide layer and processing parameter dependence on microstructure of low temperature grown carbon nanotube, characterized by SEM, TEM XRD and R없nan spectroscopy, will be presented.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.275.1-275.1
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• 2014

The effects of the interfacial buffer layer and temperature on the organic bulk heterojunction (BHJ) nanostructures of copper phthalocyanine (CuPc) and fullerene (C60) systems were investigated using real time in-situ x-ray scattering. In the CuPc:C60 BHJ structures, standing-on configured ${\gamma}$-CuPc phase was formed by co-deposition of CuPc and C60. Once formed ${\gamma}$-phase was thermally stable during the annealing upon $180^{\circ}C$. Meanwhile, the insertion of CuI buffer layer prior to deposition of the CuPc:C60 BHJ layer induced lying-down configured CuPc crystals in the BHJ layer. The lying CuPc peak intensity and the lattice parameter were increased by the thermal annealing. This increment of the intensity seemed to be related to the strain at the interface between CuPc:C60 and CuI, which was proportional to the enhancement of the power conversion efficiency of the device.

• 한국신재생에너지학회:학술대회논문집
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• 2011.11a
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• pp.62.1-62.1
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• 2011

The structural, optical, and electrical properties of Ga-doped ZnO (GZO) thin films on glass substrates grown by radio-frequency(RF) magnetron sputtering were investigated. The flow ratio of Ar was varied as a deposition parameter for growing high-quality GZO thin films. The structural properties and surface morphologies of GZO were characterized by the X-ray diffraction. To analyze the optical properties of GZO, the optical absorbance was measured in the wavelength range of 300-1100 nm by using UV-VIS spectrophotometer. The optical transmittance, absorption coefficient, and optical bandgap energy of GZO thin films were calculated from the measured data. The crystallinity of GZO thin films is improved and the bandgap energy increases from 3.08 to 3.23eV with the increasing Ar flow ratio from 10 to 100 sccm. The average transmittance of the films is over 88% in the visible range. The lowest resistivity of the GZO is $6.215{\times}10^{-4}{\Omega}{\cdot}cm$ and the hall mobility increases with the increasing Ar flow ratio. We can optimize the characteristics of GZO as a transparent electrode for thin film solar cells by controlling Ar flow ratio during deposition process.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2003.02a
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• pp.117-119
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• 2003

YBa$_2$Cu$_3$O$_{7-{\delta}}$(YBCO) high temperature superconducting thin films were grown on SrTiO$_3$single crystal substrates by pulsed laser deposition(PLD). The texture and lattice parameter of the YBCO films were analysed using the GADDS (general area detector diffraction system) which enables XRD analyses to be done faster and with fewer sample movement than with the XRD system with point detector. The XRD results of the films grown in different deposition conditions are reported together with the SEM microstructure analysis results.ysis results.

• Transactions of the Korean hydrogen and new energy society
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• v.29 no.5
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• pp.434-441
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• 2018

The pore size of nickel (Ni) bottom electrode layer (BEL) for low-temperature solid oxide fuel cells embedded with ultrathin-film electrolyte was controlled by changing the substrate surface morphology and deposition process parameters. For ~150-nm-thick Ni BEL, the upper side of an anodic aluminum oxide (AAO) substrate with ~65-nm-sized pores provided ~1.7 times smaller pore size than the lower side of the AAO substrate. For ~100-nm-thick Ni BEL, the AAO substrate with ~45-nm-sized pores provided ~2.6 times smaller pore size than the AAO substrate with ~95-nm-sized pores, and the deposition pressure of ~4 mTorr provided ~1.3 times smaller pore size than that of ~48 mTorr. On the AAO substrate with ~65-nm-sized pores, the Ni BEL deposited for 400 seconds had ~2 times smaller pore size than the Ni BEL deposited for 100 seconds.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.210-210
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• 2000

Vertically well aligned multi-wall carbon nanotubes (CNT) were grown on nickel coated glass substrates by plasma enhanced hot filament chemical vapor deposition at low temperatures below 600$^{\circ}C$. Acetylene and ammonia gas were used as the carbon source and a catalyst. Effects of growth parameters such as pre-treatment of substrate, plasma intensity, filament current, imput gas flow rate, gas composition, substrate temperature and different substrates on the growth characteristics of CNT were systematically investigated. Figure 1 shows SEM image of CNT grown on Ni coated glass substrate. Diameter of nanotube was 30 to 100nm depending on the growth condition. The diameter of CNT decreased and density of CNT increased as NH3 etching time etching time increased. Plasma intensity was found to be the most critical parameter to determine the growth of CNT. CNT was not grown at the plasma intensity lower than 500V. Growth of CNT without filament current was observed. Raman spectroscopy showed the C-C tangential stretching mode at 1592 cm1 as well as D line at 1366 cm-1. From the microanalysis using HRTEM, nickel cap was observed on the top of the grown CNT and very thin carbon amorphous layer of 5nm was found on the nickel cap. Current-voltage characteristics using STM showed about 34nA of current at the applied voltage of 1 volt. Electron emission from the vertically well aligned CNT was obtained using phosphor anode with onset electric field of 1.5C/um.