• Progress in Superconductivity and Cryogenics
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• v.21 no.4
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• pp.29-33
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• 2019

2G HTS wire with high engineering current density is desired for applications where compact, high power density superconducting equipment is important. We have succeeded in enhancing engineering current density of commercial SuperOx 2G HTS wire based on GdBCO by increasing the HTS layer thickness without fast degradation of the HTS film microstructure. This was possible after improving the temperature uniformity along the HTS film deposition zone. In particular, the wire engineering current density was increased from 700-770 A/㎟ (for a 65 ㎛-thick wire without stabilisation) or 430-480 A/㎟ (for a 105 ㎛-thick stabilised wire) at the beginning of this study to almost 1200 A/㎟ (for a 67 ㎛-thick wire without stabilisation) or 770 A/㎟ (for a 107 ㎛-thick stabilised wire) at completion of this study.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2008.11a
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• pp.15-16
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• 2008

In case manufacturing COF, through hole should be made to be used for a pathway connecting the conductive layers of its both faces. In case Cu-plating inside of through hole with electroless plating way, contact between Cu and PI film gets bad to be fell apart from PI by the impact of applying to the electric devices. Therefore, after sputtering is applying on inner through hole, then a method to perform electroplating process. In this study, after changing sputtering condition to manufacture FCCL, we looked the changeability of the upper PI and inner hole Cu layers. Making use of RF Magnetron sputtering equipment, we coated Cu thin film and Cu-plated on it through electroplating. After cold-mounting the completed FCCL, we examined hole section through an optical microscope. From the result of test, with parameters deposition pressure and deposition time, both the thickness of the hole plated layer and PI plated upper layer increased at regular rate, increasing the thickness of Cu sputter layer. However, from the result of test in increasing RF-power, we could know the increment rate of hole plated layer is considerably greater than that of PI plated upper layer. Therefore, we finally acquired good result; if you want only to increase the plated layer of inner hole, it's much better to increase RF-power.

• Journal of the Korean institute of surface engineering
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• v.40 no.4
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• pp.165-169
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• 2007

Compared to conventional Indium Tin Oxide (ITO) film deposition methods, cesium (Cs) assisted sputtering offers higher film characteristics in terms of electrical, mechanical and optical properties. However, it showed highly non-linear characteristics between process input factors and equipment responses. Therefore, to maximize film quality, optimization of manufacturing process is essential and process characterization is the first step for process optimization. For this, we designed 2 level design of experiment (DOE) to analyze ITO film characteristics including film thickness, resistivity and transmittance. DC power, pressure, carrier flow, Cs temperature and substrate temperature were selected for process input variables. Through statistical effect analysis methods, relation between three types of ITO film characteristics and five kinds of process inputs are successfully characterized and eventually, it can be used to optimize Cs assisted sputtering processes for various types of film deposition.

• Journal of Welding and Joining
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• v.13 no.4
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• pp.122-131
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• 1995

An automatic welding equipment for thick plates requires the capability of the seam tracking of the weld line which often includes misalignment of the workpiece and variation of groove width. In this study, an automatic welding equipment and control algorithms based on the arc sensor were proposed for the GMA welding of thick plates which had misalignment and gap variation. The developed system being constituted with 5 axis can be automatically controlled by computer and also automnatically set the welding conditions such as welding current, and voltage. The proposed algorithms for the seam tracking in multi-pass welding of the thick plates were constituted as follows : the detection of weaving-end point for findng the variation of groove width, the control of welding velocity for acquiring a constant thickness deposition of weld metal, and the calculation of groove width and height of an arbitrary pass in the multi-pass weld. As results of the application of the system, it was revealed that the system had a good capability in seam tracking and made an excellent weld quality in V groove butt joint.

• Journal of the Korean Vacuum Society
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• v.21 no.2
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• pp.106-112
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• 2012

New equipment for quantitative and qualitative adsorption of volatile organic compound was set up, and using this equipment, adsorption behaviors of various carbob-based nanomaterials and $TiO_2$ thin films prepared by atomic layer deposition were compared. We could conclud that $TiO_2$ thin films can show higher adsorption capacity of toluene comparing to the carbon-based nanostructures due to higher affinity of the surface OH groups of $TiO_2$ towards toluene adsorption. We also demonstrate that our method allows to discriminate reversible and irreversible adsorptions at a given temperature.

• Proceedings of the Safety Management and Science Conference
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• 2001.11a
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• pp.193-202
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• 2001

The individual rotten water purification tank recently discharges wastewater and sewage through the outlet without purification ability. The outlet water and affiliated water purification tank with microorganism cultivator tank cultivates microorganism and then drops the value BOD, COD of sewage and discharges the quality of water into the outlet. The blower and water pump operating continuously prompts the waste of energy and deterioration of equipment. Each room of deposition tank, foaming tank, microorganism cultivator tank is equipment with the sludge detection senses so it can detect the density of each room. The power-drive plant of the blower and water pump which ate the system cultivating the microorganism must be made as fuzzy controlization (If the sludge amount of each room become higher, the rate of operation of blower and water pump must heighten, on the contrary, in case of row sludge amount, the total handling amount and microorganism handling amount of each room of control. Tank reducing the rate of operation must be DB. At present, the blower amount in proportion to the sludge and oxygen demanding amount has to control. Each mom must be checked outlet level of the outlet, also each room must flow backward discharge materials, and must operate feed-back control until we want to be come as a below value of BOD/COD(10PPM ; KS).

• Journal of the Semiconductor & Display Technology
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• v.3 no.3
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• pp.11-17
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• 2004

This research has been progressed for adhesive improvement of the Polyimide/Buffer layer/Cu at the COF(Chip On Film) which induced as the alternative plan about high concentration of a circuit or substrates according to demands of miniaturization and high efficiency of various electronic equipment. RF plasma equipment was applied to when plama pretreatment was performed for improvement of adhesive strength of PI and Cr as the buffer layer. Experimental fluents were a species of the buffer layer, depositied time and the ratio of $O_2$/Ar when performed to plasma pretreatment. The results are that Ni was superior to Cr at peel test according to a species of the buffer layer, peel strength and Cu THK were showed proportional relation to deposition structure of the same buffer layer and sample of the Cr depositied time(30 sec) and Cu depositied time(20 min) was showed good adhesion to peel test according to Cr's depositied time and Cu's depositied time. When perform PI's plasma pretreatment peel strength and $O_2$/Ar ratio were showed proportional relation. But $O_2$/Ar(2/5) was best condition since then decreased.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1651-1652
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• 2006

In this study, the 2-step methode by ALD equipment was used to improve the characteristics of ZnO thin films used in a piezoelectric layer when the FBAR devices of a SMR type are fabricated. The Height of formed buffer layer was $400{\AA}$ and ZnO thin film of $13600{\AA}$ was deposited by RF sputter on the buffer layer. When ZnO thin films are deposited, deposition conditions such as pressure, injection time of source and purge time were changed variously. The characteristics of piezoelectric layer such as a crystal orientation and micro-structure of deposited ZnO thin films were studied by SEM, AFM and XRD.

• Journal of the Korea Safety Management & Science
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• v.3 no.4
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• pp.53-63
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• 2001

The individual rotten water purification tank recently discharges wastewater and sewage through the outlet without purification ability. The outlet water and affiliated water purification tank with microorganism cultivator tank cultivates microorganism and then drops the value BOD, COD of sewage and discharges the quality of water into the outlet. The blower and water pump operating continuously prompts the waste of energy and deterioration of equipment. Each room of deposition tank, foaming tank, microorganism cultivator tank is equipment with the sludge detection senses so it can detect the density of each room. The power-drive plant of the blower and water pump which are the system cultivating the microorganism must be made as fuzzy controlization (If the sludge amount of each room become higher, the rate of operation of blower and water pump must heighten, on the contrary, in case of row sludge amount, the total handling amount and microorganism handling amount of each room of control. Tank reducing the rate of operation must be DB. At present, the blower amount in proportion to the sludge and oxyzen demanding amount has to control. Each room mus be checked outlet level of the outlet, also each room must flow backward discharge materials, and must operate feed-back control until we want to be come as a below value of BOD/COD(10PPM ; KS).

• The Korean Journal of Ceramics
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• v.2 no.4
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• pp.216-220
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• 1996

In the present paper, a new type of DC arc plasma torch is disclosed. The principles of the new magnetic and fluid dynamic controlled large orifice long discharge tunnel plasma torch is discussed. Two series of DC Plasma Jet diamond film deposition equipment have been developed. The 20kW Jet equipped with a $\Phi$70 mm orifice torch is capable of deposition diamond films at a growth rate as high as 40$\mu\textrm{m}$/h over a substrate area of $\Phi$65 mm. The 100kW high power Jet which is newly developed based on the experience of the low power model is equipped with a $\Phi$120 mm orifice torch, and is capable of depositing diamond films over a substrate area of $\Phi$110 mm at growth rate as high as 40 $\mu\textrm{m}$/h, and can be operated at gas recycling mode, which allows 95% of the gases be recycled. It is demonstrated that the new type DC plasma torch can be easily scaled up to even higher power Jet. It is estimated that even by the 100kW Jet, the cost for tool grade diamond films can be as low as less than ＄4/carat.