• 융합정보논문지
• /
• 제10권6호
• /
• pp.28-34
• /
• 2020

본 논문에서는 VCSEL (Vertical Cavity Surface Emitting Laser) 레이저를 만드는 구조와 유사한 GaAs 웨이퍼상에 MOCVD (Metal Organic Chemical Vapor Deposition) 장비로 GaAs와 AlGaAs 에피층을 형성시킨 구조를 사용한다. 3차원 공진현상에 의해 자연 발생되는 광양자테 (PQR: Photonic Quantum Ring) 소자를 건식 식각 방법인 CAIBE (Chemically Assisted Ion Beam Etching) 기술로 제작하였지만, 진공 분위기에서 진행해야 하는 문제점 때문에 저가격으로 쉽게 소자를 제작할 수 있는 방법이 연구되었고, 그 결과 인산, 과산화수소, 메탄올이 혼합된 용액의 습식식각 기술로 가능성을 확인하였으며, 이 방법을 적용하여 소자를 제작한 내용에 대해 논한다. 또한, 제작된 광소자의 스펙트럼을 측정하였고, 이 결과들을 이론적으로 해석하여 얻은 파장값과 비교한다. 광양자테 소자는 3차원 형상으로 세포를 모델링하거나, 디스플레이 분야로의 응용이 가능할 것으로 기대한다.

• 한국신재생에너지학회:학술대회논문집
• /
• 한국신재생에너지학회 2007년도 추계학술대회 논문집
• /
• pp.281-284
• /
• 2007

Recently, we have developed p-i-n a-Si:H single junction thin film solar cells with RF (13.56MHz) plasma enhanced chemical vapor deposition (PECVD) system, and also successfully fabricated the mini modules ($>300cm^2$), using the laser patterning technique to form an integrated series connection. The efficiency of a mini module was 7.4% ($Area=305cm^2$, Isc=0.25A, Voc=14.74V, FF=62%). To fabricate large area modules, it is important to optimise the integrated series connection, without damaging the cell. We have newly installed the laser patterning equipment that consists of two different lasers, $SHG-YVO_4$ (${\lambda}=0.532{\mu}m$) and YAG (${\lambda}=1.064{\mu}m$). The mini-modules are formed through several scribed lines such as pattern-l (front TCO), pattern-2 (PV layers) and pattern-3 (BR/back contact). However, in the case of pattern-3, a high-energy part of laser shot damaged the textured surface of the front TCO, so that the resistance between the each cells decreases due to an incomplete isolation. In this study, the re-deposition of SnOx from the front TCO, Zn (BR layer) and Al (back contact) on the sidewalls of pattern-3 scribed lines was observed. Moreover, re-crystallization of a-Si:H layers due to thermal damage by laser patterning was evaluated. These cause an increase of a leakage current, result in a low efficiency of module. To optimize a-Si:H single junction thin film modules, a laser beam profile was changed, and its effect on isolation of scribed lines is discussed in this paper.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.95-95
• /
• 2014

An OLED(Organic Light-Emitting Diode) device based on the emissive electroluminescent layer a film of organic materials. OLED is used for many electronic devices such as TV, mobile phones, handheld games consoles. ULVAC's mass production systems are indispensable to the manufacturing of OLED device. ULVAC is a manufacturer and worldwide supplier of equipment and vacuum systems for the OLED, LCD, Semiconductor, Electronics, Optical device and related high technology industries. The SMD Series are single-substrate sputtering systems for deposition of films such as metal films and TCO (Transparent Conductive Oxide) films. ULVAC has delivered a large number of these systems not only Organic Evaporating systems but also LTPS CVD systems. The most important technology of thin-film encapsulation (TFE) is preventing moisture($H_2O$) and oxygen permeation into flexible OLED devices. As a polymer substrate does not offer the same barrier performance as glass substrate, the TFE should be developed on both the bottom and top side of the device layers for sufficient lifetimes. This report provides a review of promising thin-film barrier technologies as well as the WVTR(Water Vapor Transmission Rate) properties. Multilayer thin-film deposition technology of organic and inorganic layer is very effective method for increasing barrier performance of OLED device. Gases and water in the organic evaporating system is having a strong influence as impurities to OLED device. CRYO pump is one of the very useful vacuum components to reduce above impurities. There for CRYO pump is faster than conventional TMP exhaust velocity of gases and water. So, we suggest new method to make a good vacuum condition which is CRYO Trap addition on OLED evaporator. Alignment accuracy is one of the key technologies to perform high resolution OLED device. In order to reduce vibration characteristic of CRYO pump, ULVAC has developed low vibration CRYO pumps to achieve high resolution alignment performance between Metal mask and substrate. This report also includes ULVAC's approach for these issues.

• 한국표면공학회지
• /
• 제49권2호
• /
• pp.202-210
• /
• 2016

This study was intended to investigate the effect of the amount of magnesium addition and heat treatment in the Al-Mg coating film in order to improve corrosion resistance of aluminum coating. Al-Mg alloy films were deposited on cold rolled steel by physical vapor deposition sputtering method. Heat treatment was fulfilled in an nitrogen atmosphere at the temperature of $400^{\circ}C$ for 10 min. The morphology was observed by SEM, component and phase of the deposited films were investigated by using GDLS and XRD, respectively. The corrosion behaviors of Al-Mg films were estimated by exposing salt spray test at 5 wt.% NaCl solution and measuring polarization curves in deaerated 3 wt.% NaCl solution. With the increase of magnesium content, the morphology of the deposited Al-Mg films changed from columnar to featureless structure and particle size was became fine. The x-ray diffraction data for deposited Al-Mg films showed only pure Al peaks. However, Al-Mg alloy peaks such as $Al_3Mg_2$ and $Al_{12}Mg_{17}$ were formed after heat treatment. All the sputtered Al-Mg films obviously showed good corrosion resistance compared with aluminum and zinc films. And corrosion resistance of Al-Mg film was increased after heat treatment.

• 한국재료학회지
• /
• 제27권12호
• /
• pp.699-704
• /
• 2017

Recently, the use of an aluminum nitride(AlN) buffer layer has been actively studied for fabricating a high quality gallium nitride(GaN) template for high efficiency Light Emitting Diode(LED) production. We confirmed that AlN deposition after $N_2$ plasma treatment of the substrate has a positive influence on GaN epitaxial growth. In this study, $N_2$ plasma treatment was performed on a commercial patterned sapphire substrate by RF magnetron sputtering equipment. GaN was grown by metal organic chemical vapor deposition(MOCVD). The surface treated with $N_2$ plasma was analyzed by x-ray photoelectron spectroscopy(XPS) to determine the binding energy. The XPS results indicated the surface was changed from $Al_2O_3$ to AlN and AlON, and we confirmed that the thickness of the pretreated layer was about 1 nm using high resolution transmission electron microscopy(HR-TEM). The AlN buffer layer deposited on the grown pretreated layer had lower crystallinity than the as-treated PSS. Therefore, the surface $N_2$ plasma treatment on PSS resulted in a reduction in the crystallinity of the AlN buffer layer, which can improve the epitaxial growth quality of the GaN template.

• 마이크로전자및패키징학회지
• /
• 제28권1호
• /
• pp.67-71
• /
• 2021

본 연구에서는 금속 와이어를 촉매로 화학기상증착법을 이용하여 그래핀을 합성하고 구조 및 전기적 특성 변화를 분석하였다. 구리와 니켈의 탄소에 대한 용해도 차이로 인해 구리와이어에서는 단층 그래핀이 성장하였고, 니켈와이어의 표면에는 다층 그래핀이 성장되었다. 또한. 고온의 그래핀 성장 조건에서 구리와 니켈의 재결정화를 통해 결정립의 크기가 증가한 것을 확인하였다. 표면에 그래핀이 합성된 구리와이어의 경우, 최대전류허용치는 1.91×105 A/㎠으로 합성 전 구리와이어에 비해 약 27% 향상되었다. 이와 유사하게, 다층 그래핀이 합성된 니켈와이어의 경우에도 최대전류 허용치는 순수한 니켈와이어 대비 약 36% 향상된 4.41×104 A/㎠으로 측정되었다. 이러한 그래핀/금속 복합소재의 우수한 전기적 특성은 고전류를 요구하는 소자 및 부품에서 안정적인 전기적 흐름을 공급하는데 기여할 수 있을 것이다.

• 반도체디스플레이기술학회지
• /
• 제23권1호
• /
• pp.92-96
• /
• 2024

The application of the technology for forming Al₂O₃ thin films using ALD(atomic layer deposition) method is rapidly increasing in the semiconductor and display fields. In order to increase the efficiency of the ALD process in a mass production line, metallic by-products generated from the ALD process chamber must be effectively collected. By collecting by-products flowing out of the chamber with a cold trap device before they go to the vacuum pump, damage to the vacuum pump can be prevented and the work room can be maintained stably, resulting in increased process flow rate. In this study, a cold trap was installed between the ALD process chamber and the dry pump to measure and analyze by-products generated during the Al₂O₃ thin film deposition process. As a result, it was confirmed that Al and O elements were discharged, and the collection forms were two types: bulk and powder. And the binding energy peaked at 73.7 ~ 74.3 eV, the binding energy of Al 2p, and 530.7 eV, the binding energy of O 1s, indicating that the binding structure was Al-O.

• 한국결정성장학회지
• /
• 제34권4호
• /
• pp.139-142
• /
• 2024

SiC와 GaN 등의 광에너지갭 소재들의 전력반도체에 대한 활용과 소자의 개발 추세와 함께 더 높은 에너지갭을 갖는 AlN 단결정에 대한 연구도 2인치 단결정 웨이퍼의 개발 성공 등 많은 연구 결과가 보고되고 있다. 그러나, 화학기상증착공법을 적용하여 성장된 AlN 단결정은 수 마이크로미터의 두께 이하의 박막은 개발되었으나, 그 이상의 두께를 갖은 결과는 거의 없다. 따라서, 본 연구에서는 화학기상증착공법중 하나인 HVPE(Hydride vapor phase epitaxy) 법을 적용하여 성장하고자 하였다. 성장된 AlN 단결정은 자체 제작된 설비를 이용하여 제작하였으며, 사파이어 기판을 사용하여, AlN 단 결정을 제조하기 위한 조건을 확립하고자 하였고, 그 결과를 광학현미경 관찰을 통하여 성장거동을 고찰하고자 하였다.

• Spatial Information Research
• /
• 제14권1호
• /
• pp.57-65
• /
• 2006

일반적으로 퇴적물 준설에 대한 조사는 GPS/Echo Sounder 및 Total Station/Echo Sounder를 조합한 음파탐사 방법을 이용하여 대상지의 수평위치 및 수심에 대한 관측을 실시하고 있으며, 하상의 단면계산, 저수량 및 준설계획량 등을 추정하게 된다. 이후 준설계획에 대한 계획고 및 준설토량에 대한 세부적인 계획을 수립하게 된다. 하지만 Echo Sounder를 사용하는 음파탐사 방법은 퇴적물에 대한 정확한 분포를 파악할 수 없는 단점이 있다. 본 연구는 저수지 하부의 퇴적물 및 이의 분포를 파악하여 저수지 준설계획을 수립하여 기존의 탐사방법에 대한 준설능력 향상에 중점을 두었다. 또한 기존의 음파탐사 방식과 다른 레이더탐사 장비를 이용한 GPS/GPR(Ground Penetration Radar)을 사용하여 저수지의 수평위치, 수심값을 결정하고 동시에 원지반에 분포하고 있는 퇴적물의 분포를 추정, 준설에 적용하고자 하였다. 우선 현장의 시료채취를 통한 수조모형실험을 실시하여 장비에 대한 정확도 검증을 거친 후 현장적용에 적용하여 그 가능성을 평가하였다.

• Advances in aircraft and spacecraft science
• /
• 제9권3호
• /
• pp.195-215
• /
• 2022

The increasing interest in CubeSat platforms ant their capability of enlarging the frontier of possible missions impose technology improvements. Miniaturized electrical propulsion (EP) systems enable new mission for multi-unit CubeSats (6U+). While electric propulsion systems have achieved important level of knowledge at equipment level, the investigation of the mutual impact between EP system and CubeSat technology at system level can provide a decisive improvement for both the technologies. The interaction between CubeSat and EP system should be assessed in terms of electromagnetic emissions (both radiated and conducted), thermal gradients, high electrical power management, surface chemical deposition, and quick and reliable data exchanges. This paper shows how a versatile CubeSat Test Platform (CTP), together with standardized procedures and specialized facilities enable the acquisition fundamental and unprecedented information. Measurements can be taken both by specific ground support equipment placed inside the vacuum facility and by dedicated sensors and subsystems installed on the CTP, providing a completely new set of data never obtained before. CTP is constituted of a 6U primary structure hosting the EP system, representative CubeSat avionics and batteries. For the first test campaign, CTP hosts the ambipolar plasma propulsion system, called Regulus and developed by T4I. After the integration and the functional test in laboratory environment, CTP + Regulus performed a Test campaign in relevant environment in the vacuum chamber at CISAS, University of Padua. This paper is focused on the test campaign description and the main results achieved at different power levels for different duration of the firings.