• Title/Summary/Keyword: deposition density

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Analysis of Electron Transport Coefficients in Binary Mixtures of TEOS Gas with Kr, Xe, He and Ne Gases for Using in Plasma Assisted Thin-film Deposition

  • Tuan, Do Anh
    • Journal of Electrical Engineering and Technology
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    • v.11 no.2
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    • pp.455-462
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    • 2016
  • The electron transport coefficients in not only pure atoms and molecules but also in the binary gas mixtures are necessary, especially on understanding quantitatively plasma phenomena and ionized gases. Electron transport coefficients (electron drift velocity, density-normalized longitudinal diffusion coefficient, and density-normalized effective ionization coefficient) in binary mixtures of TEOS gas with buffer gases such as Kr, Xe, He, and Ne gases, therefore, was analyzed and calculated by a two-term approximation of the Boltzmann equation in the E/N range (ratio of the electric field E to the neutral number density N) of 0.1 - 1000 Td (1 Td = 10−17 V.cm2). These binary gas mixtures can be considered to use as the silicon sources in many industrial applications depending on mixture ratio and particular application of gas, especially on plasma assisted thin-film deposition.

Oxygen Pressure Dependence of Structural and Electrical Characteristics of PLZT Thin Films Prepared by a PLD (PLD 법으로 제작된 PLZT 박막의 산소압에 따른 구조 및 전기적 특성)

  • Jang, Nak-Won
    • Journal of Advanced Marine Engineering and Technology
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    • v.30 no.8
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    • pp.927-933
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    • 2006
  • The structural and electrical characteristics of PLZT thin films fabricated onto $Pt/IrO_2/Ir/Ti/SiO_2/Si$ substrates by a pulsed laser deposition were investigated to develop the high dielectric thin films for capacitor layer of semiconductor memory devices The slim region 14/50/50 PLZT thin films were fabricated by PLD and estimated the characteristics for memory application 14/50/50 PLZT thin films have crystallize into perovskite structure at the $600^{\circ}C$ deposition temperature, 200 mTorr of oxygen pressure, and 2 $J/cm^2$ of laser energy density. In this condition PLZT thin films had the dielectric constant as high as 985, storage charge density 8.17 ${\mu}C/cm^2$ and charging time 0.20 ns. Leakage current density was less than $10^{-10}A/cm^2$ up to 5 V bias voltage.

Synthesis of Diamond Thin Films by Rf Plasma Assisted Chemical Vapor Deposition (RF 플라즈마 CVD법에 의한 다이아몬드 박막의 합성)

  • 이상희;이덕출
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.7
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    • pp.552-556
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    • 1998
  • Diamond thin films were deposited on Si substrate using $CH_4 and H_2$mixed gas by RF plasma CVD. Prior to deposition, the substrate surface was mechanically scratched with the diamond paste of $3{\mu}m$ to improve the density of nucleation sites. The microstructure of diamond films deposited with methane(0.5%~2%) at the reaction pressure ranging from 20 torr to 50torrr were studied by a scanning electron microscope. It was observed in the deposited diamond films that the nucleation density decreased and crystallinity increased with decreasing the methane concentration. However, the nucleation density and crystallinity were decreased with decreasing the process pressure.

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Assessment of portable traveling pluviator to prepare reconstituted sand specimens

  • Dave, Trudeep N.;Dasaka, S.M.
    • Geomechanics and Engineering
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    • v.4 no.2
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    • pp.79-90
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    • 2012
  • Air pluviation method is widely adopted for preparation of large, uniform and repeatable sand beds of desired densities for laboratory studies to simulate in-situ conditions and obtain test results which are highly reliable. This paper presents details of a portable traveling pluviator recently developed for model sand bed preparation. The pluviator essentially consisted of a hopper, orifice plates for varying deposition intensity, combination of flexible and rigid tubes for smooth travel of material, and a set of diffuser sieves to obtain uniformity of pluviated sand bed. It was observed that sand beds of lower relative density can be achieved by controlling height of fall, whereas, denser sand beds could be obtained by controlling deposition intensity. Uniformity of pluviated sand beds was evaluated using cone penetration test and at lower relative densities minor variation in density was observed with depth. With increase in relative density of sand bed higher repeatability of uniform pluviation was achieved.

Comparison of vacuum metal deposition (VMD) and powder method for developing latent fingerprint on plastic envelope surface (플라스틱 봉투 표면에서 지문을 현출하기 위한 Vacuum Metal Deposition (VMD)과 분말법의 비교)

  • Kim, Chaewon;Lee, Narae;Kim, Taewon;Yu, Jeseol
    • Analytical Science and Technology
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    • v.33 no.3
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    • pp.159-166
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    • 2020
  • Vacuum metal deposition (VMD) is effective to develop latent fingerprints on non-porous and semi-porous surfaces. VMD can be used in cases when fingerprints that can not be developed by generalized techniques or deposited on difficult surfaces. The recommended surfaces for VMD techniques include vinyl, polymer bills, magnetic coated tickets, etc. In this study, the minimum amount of gold input was explored for developing fingerprints from at least 12 hours to up to 28 days after deposit fingerprint on the pink high density polyethylene envelope (HDPE) and low density polyethylene envelope (LDPE), which are mainly used as delivery envelopes. And the results were compared with the effects of black powder and fluorescent powder. In addition, delivery envelopes used for delivery were collected, then classified as HDPE and LDPE and pseudo-operation test was performed. As a result, VMD method developed good quality of fingerprints.

Numerical Modeling of an Inductively Coupled Plasma Sputter Sublimation Deposition System

  • Joo, Junghoon
    • Applied Science and Convergence Technology
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    • v.23 no.4
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    • pp.179-186
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    • 2014
  • Fluid model based numerical simulation was carried out for an inductively coupled plasma assisted sputter deposition system. Power absorption, electron temperature and density distribution was modeled with drift diffusion approximation. Effect of an electrically conducting substrate was analyzed and showed confined plasma below the substrate. Part of the plasma was leaked around the substrate edge. Comparison between the quasi-neutrality based compact model and Poisson equation resolved model showed more broadened profile in inductively coupled plasma power absorption than quasi-neutrality case, but very similar Ar ion number density profile. Electric potential was calculated to be in the range of 50 V between a Cr rod source and a conductive substrate. A new model including Cr sputtering by Ar+was developed and used in simulating Cr deposition process. Cr was modeled to be ionized by direct electron impact and showed narrower distribution than Ar ions.

Performance Behavior by H2 and CO as a Fuel in Intermediate Temperature Solid Oxide Fuel Cell (IT-SOFC) (중.저온형 고체산화물 연료전지에서 연료로 공급되는 CO 와 H2 가 성능에 미치는 영향)

  • Park, Kwang-Jin;Bae, Joong-Myeon
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.32 no.12
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    • pp.963-969
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    • 2008
  • The performance behavior of solid oxide fuel cell using $H_2$ and CO as fuels was investigated. The power densities and impedance results showed a little variation as the ratio of $H_2$ and CO changed. However, when the pure CO was used as a fuel, area specific resistance (ASR), especially low frequency region, was increased. This might be due to carbon deposition on anode. The maximum power density was 60% lower using CO than using $H_2$. Carbon deposition reduced after constant current was applied. The SOFC performance was recovered from the carbon deposition after applying constant current during 100h.

Surface Properties of Superconducting Thick Film with Suspension Solution added with Polymer (폴리머를 첨가한 현탁용매에 따른 초전도 후막의 표면특성)

  • 소대화;이영매;임병제;김태완;전용우;코로보바나탈리아
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.11a
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    • pp.503-506
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    • 2000
  • YBCO superconducting thick films were prepared on Ag wire by electrophoresis in acetone and ethanol with chemically modified suspension. The addition of organic compounds, such as PEG, EG into suspension solution for improving critical current density was investigated. Surface state, deposition condition, pore distribution and cracks were investigated by using SEM photographs. Controlling preparation conditions were studied for reducing these defects. As a results, in acetone solution, the surface crack of samples was decreased with increasing PEG. On the contrary, the surface crack of sample was increasing with increasing the amount of EG. In ethanol solution without I$_2$, which was generally used for an electrolyte, the deposition time was longer than this of acetone. For that reason the sample deposition in ethanol time was needed with enough stirring time for suspending YBCO powder and deposition time.

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Metal-Organic Chemical Vapor Deposition of $Pb(Zr_xTi_{1-x})O_3$ Thin Films for High-Density Ferroelectric Random Access Memory Application

  • Lee, June-Key;Ku, June-Mo;Cho, Chung-Rae;Lee, Yong-Kyun;Sangmin Shin;Park, Youngsoo
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.2 no.3
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    • pp.205-212
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    • 2002
  • The growth characteristics of metal-organic chemical vapor deposition (MOCVD) $Pb(Zr_xTi_{1-x})O_3 (PZT) thin films were investigated for the application of high-density ferroelectric random access memories (FRAM) devices beyond 64Mbit density. The supply control of Pb precursor plays the most critical role in order to achieve a reliable process for PZT thin film deposition. We have monitored the changes in the microstructure and electrical properties of films on increasing the Pb precursor supply into the reaction chamber. Under optimized conditions, $Ir/IrO_2/PZT(100nm)/Ir capacitor shows well-saturated hysteresis loops with a remanent polarization (Pr) of $~28{\mu}C/textrm{cm}^2$ and coercive voltage of 0.8V at 2.5V. Other issues such as step coverage, compositional uniformity and low temperature deposition was discussed in viewpoint of actual device application.

Culturing of Rat Intestinal Epithelial Cells-18 on Plasma Polymerized Ethylenediamine Films Deposited by Plasma Enhanced Chemical Vapor Deposition

  • Choi, Chang-Rok;Kim, Kyung-Seop;Kim, Hong-Ja;Park, Heon-Yong;Jung, Dong-Geun;Boo, Jin-Hyo
    • Bulletin of the Korean Chemical Society
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    • v.30 no.6
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    • pp.1357-1359
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    • 2009
  • Many researchers studied cell culturing on surfaces with chemical functional groups. Previously, we reported surface properties of plasma polymerized ethylenediamine (PPEDA) films deposited by plasma enhanced chemical vapor deposition with various plasma conditions. Surface properties of PPEDA films can be controlled by plasma power during deposition. In this work, to analyze correlation of cell adherence/proliferation with surface property, we cultured rat intestinal epithelial cells-18 on the PPEDA films deposited with various plasma powers. It was shown that as plasma power was decreased, density of cells cultured on the PPEDA film surface was increased. Our findings indicate that plasma power changed the amine density of the PPEDA film surface, resulting in density change of cells cultured on the PPEDA film surface.