• Journal of the Semiconductor & Display Technology
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• v.7 no.4
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• pp.35-39
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• 2008

We studied deposition of low-k SiOCH dielectric film by PECVD. DEMS(diethoxymethlysilane) precursor, which has two ethoxy groups along with one methyl group attached to the silicon atoms, was used as precursor. The SiOCH film was deposited as a function of oxygen flow rates ranging from 0 to 100sccm. The deposition rate($\AA$/min) of SiOCH film was increased due to the increase of oxygen radical as a function of $O_2$ flow rates. The dielectric constant was decreased from 3.0 to 2.77, as the film was annealed at $450^{\circ}C$ for 30 min. So, it could account that the dielectric constant changes sensitively with $O_2$ flow rates. Also, the leakage current of the annealed film exhibited stable curve than that of asdeposited. These results were caused by the increase of Si-O-Si group and decrease of Si-CH group and OH group within the film by annealing.

• Asian Journal of Atmospheric Environment
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• v.11 no.4
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• pp.270-282
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• 2017

To evaluate the deposition amount on a ground surface, mesoscale numerical models coupled with atmospheric chemistry are widely used for larger horizontal domains ranging from a few to several hundreds of kilometers; however, these models are rarely applied to high-resolution simulations. In this study, the performance of a dry and wet deposition model is investigated to estimate the amount of deposition via computational fluid dynamics (CFD) models with high grid resolution. Reynolds-averaged Navier-Stokes (RANS) simulations are implemented for a cone and a two-dimensional ridge to estimate the dry deposition rate, and a constant deposition velocity is used to obtain the dry deposition flux. The results show that the dry deposition rate of RANS generally corresponds to that observed in wind-tunnel experiments. For the wet deposition model, the transport equation of a new scalar concentration scavenged by rain droplets is developed and used instead of the scalar concentration scavenged by raindrops falling to the ground surface just below the scavenging point, which is normally used in mesoscale numerical models. A sensitivity analysis of the proposed wet deposition procedure is implemented. The result indicates the applicability of RANS for high-resolution grids considering the effect of terrains on the wet deposition.

• Journal of Surface Science and Engineering
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• v.44 no.4
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• pp.131-136
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• 2011

A kinetic study has been made for the growth of nanocrystalline diamond (NCD) particles to a continuous thin film on silicon substrate in a microwave plasma chemical vapor deposition reactor. Parameters of deposition have been microwave power of 1.2 kW, the chamber pressure of 110 Torr, and the Ar/$CH_4$ ratio of 200/2 sccm. The deposition has been carried out at temperatures in the range of $400\sim700^{\circ}C$ for the times of 0.5~16 h. It has been revealed that a continuous diamond film evolves from the growth and coalescence of diamond crystallites (or particles), which have been heterogeneously nucleated at the previously scratched sites. The diamond particles grow following an $h^2$ = k't relationship, where h is the height of particles, k' is the particle growth rate constant, and t is the deposition time. The k' values at the different deposition temperatures satisfy an Arrhenius equation with the apparent activation energy of 4.37 kcal/mol or 0.19 eV/ atom. The rate limiting step should be the diffusion of carbon species over the Si substrate surface. The growth of diamond film thickness (H) shows an H = kt relationship with deposition time, t. The film growth rate constant, k, values at the different deposition temperatures show another Arrhenius-type expression with the apparent activation energy of 3.89 kcal/mol or 0.17 eV/atom. In this case, the rate limiting step might be the incorporation reaction of carbon species from the plasma on the film surface.

• Transactions on Electrical and Electronic Materials
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• v.2 no.1
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• pp.1-6
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• 2001

$C_{x}F_{y}$ polymer film was deposited in rf and dc Fluorinert vapor ($C_{7}F_{16}$) plasmas. In the plasma phase, the spatial distribution of optical emission spectra and the temporal concentration of decomposed species were monitored, and kinetics of the $C_{7}F_{16}$ decomposition process was discussed. Deposition of $C_{x}F_{y}$ film has been tried on substrates of stainless steel, glass, molybdenum and silicon wafers at room temperature in the vapor pressures of 40 and 100 Pa. The films deposited in the rf plasma showed excellent electrical properties as an insulator for multi-layered interconnection of deep-submicron LSI, i.e. the low dielectric constant ∼2.0, the dielectric strength ∼2 MV/cm and the high deposition rate ∼100nm/min at 100W input power.

• Journal of Electrical Engineering and Technology
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• v.1 no.1
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• pp.110-113
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• 2006

A high rate deposition sputtering process of magnesium oxide thin film in oxide mode has been developed using a 20 kW unipolar pulsed power supply. The power supply was operated at a maximum constant voltage of 500 V and a constant current of 40 A. The pulse repetition rate and the duty were changed in the ranges of $10\sim50$ kHz and $10\sim60%$, respectively. The deposition rate increased with rising incident power to the target. Maximum incident power to the magnesium target was obtained by the control of frequency, duty and current. The deposition rate of a moving state was 9 nm m/min at the average power of 1.5 kW. This result shows higher deposition rate than any other previous work involving reactive sputtering in oxide mode. The thickness uniformities over the entire substrate area of $982mm{\times}563mm$ were observed at the processing pressure of $2.8\sim9.5$ mTorr. The thickness distribution was improved at lower pressure. This technique is proposed for application to a high through-put sputtering system for plasma display panels.

• Journal of Korean Vacuum Science & Technology
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• v.7 no.2
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• pp.33-38
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• 2003

Fluorinated amorphous carbon thin films (a-C:F) for the use of low dielectric constant intermetallic layer dielectrics are deposited by plasma enhanced chemical vapor deposition with $C_4$F$_{8}$ and Si$_2$H$_{6}$/He gas mixture as precursors. To characterize and improve film properties, we changed various conditions such as deposition temperature, and RF power, and we measured the thickness and refractive indexes and FT-IR spectrum before and after annealing. At low temperatures the film properties were very poor although the growth rate was very high. On the other hand, the growth rate was low at high temperature. The growth rate increased in accordance with the deposition pressure. The dielectric constants of samples were in the range of 1.5∼5.5∼5.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.21 no.1
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• pp.79-88
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• 1997

An analysis of unsteady heat and mass transfer in the Modified Chemical Vapor Deposition has been carried out including the effects of chemical reaction and variable properties. It was found that commonly used quasi-steady state assumption could be used to predict overall efficiency of deposition, however, the assumption would not provide detailed deposition profile. The present unsteady calculations of wall temperature profile and deposition profile have been compared with the existing experimental data and were in good agreement. The effects of variable torch speed were studied. Linearly varying torch speed case until time=120s resulted in much shorter tapered entry than the constant torch speed case.

• Journal of the Korean Ceramic Society
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• v.36 no.5
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• pp.521-530
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• 1999

• Proceedings of the Korean Environmental Health Society Conference
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• 2005.06a
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• pp.293-298
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• 2005

Indoor air quality can be affected by indoor sources, ventilation, decay and outdoor levels. Although technologies exist to measure these factors, direct measurements are often difficult. The purpose of this study was to develop an alternative method to characterize indoor environmental factors by multiple indoor and outdoor measurements. Indoor and outdoor NO$_2$ and VOCs(benzene, toluene, xylene) concentrations were measured every 3 days for 60 consecutive days in 30 houses in Seoul, Asan and Daegu, Korea. Using a mass balance model and regression analysis, penetration factor (ventilation rate divided by the sum of ventilation rate and deposition constant) and source strength factor (source strength divided by the sum of ventilation rate and deposition constant) were calculated using multiple indoor and outdoor measurements. Subsequently, NO$_2$ and VOCs source strengths (ppb/hr) and deposition constant (K, hr$^{-1}$) were estimated. Deposition constants of NO$_2$, toluene and xylene were 0.98 ${\pm}$ 0.28, 0.71 ${\pm}$ 0.24 and 0.74 ${\pm}$ 0.53 hr$^{-1}$, respectively. Source strengths of NO$_2$, toluene and xylene were 16.28 ${\pm}$ 7.47,31.25 ${\pm}$ 38.45 and 23.45 ${\pm}$ 19.67 ppb/hr, respectively In conclusion, indoor environmental factors were effectively characterized by this method using multiple indoor and outdoor measurements.

• Journal of the Korea Concrete Institute
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• v.11 no.6
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• pp.79-88
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• 1999

In this paper, the electro-deposition method for the rehabilitation of cracked concrete, based on the electro-chemical technique, is presented. The main purpose of this paper is to apply this technique to reinforced concrete members on land. After cracking with a specified load(crack width 0.5mm), 10$\times$10$\times$20cm concrete specimens with embedded steel bars were immersed in several solutions, then a constant current density between the embedded steel in concrete and an electrode in the solution was applied for 4~20 weeks. The results indicate that electro-deposits formed in this process are able to close concrete cracks and to coat the concrete surface and that formation of these electro-deposits is confirmed to have an effect of protection against detrimental materials. Therefore, it is demonstrated that the electro-deposition method can be usefully applied for the rehabilitation technique of concrete.