• Journal of Environmental Health Sciences
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• v.31 no.4 s.85
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• pp.260-265
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• 2005

Indoor air quality might be affected by source strength of indoor pollutants, ventilation rate, decay rate, outdoor level, and so on. Although technologies measuring these factors exist directly, direct measurements of all factors are not always practical in most field studies. The purpose of this study was to develop an alternative method to estimate the source strength and deposition constant by application of multiple measurements. For the total duration of 60 days, indoor and outdoor $NO_2$ concentrations every 3 days were measured in 30 houses in Seoul, Asan and Daegu. Using a compartment model by mass balance and linear regression analysis, penetration factor (ventilation divided by sum of air exchange rate and deposition constant) and source strength factor (emission rate divided by sum of air exchange rate and deposition constant) were calculated. Subsequently, the source strength and deposition constant were estimated. Natural ventilation was $1.80{\pm}0.42\;ACH,\;1.11{\pm}0.50\;ACH,\;0.92{\pm}0.26\;ACH$ in Seoul, Asan and Daegu, respectively. Calculated deposition constant(K) and source strength of $NO_2,$ in this study were $0.98{\pm}0.28\;hr^{1}\;and\;16.28{\pm}7.47\;ppb/h,$ respectively.

• Proceedings of the Korean Environmental Sciences Society Conference
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• 2003.05a
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• pp.155-160
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• 2003

Indoor air quality can be affected by indoor sources, ventilation, decay and outdoor levels. Although technologies exist to measure these factors, direct measurements are often difficult. The purpose of this study was to develop an alternative method to characterize indoor environmental factors by multiple indoor and outdoor measurements. Daily indoor and outdoor $NO_2$ concentrations were measured for 30 consecutive days in 28 houses in Brisbane, Australia, and for 21 consecutive days in 37 houses in Seoul, Korea. Using a mass balance model and regression analysis, penetration factor (ventilation rate divided by the sum of ventilation rate and deposition constant) and source strength factor (source strength divided by the sum of ventilation rate and deposition constant) were calculated using multiple indoor and outdoor measurements. Subsequently, the ventilation rate and $NO_2$ source strength were estimated. Geometric means of ventilation rate were 1.44 ACH in Brisbane, assuming a residential $NO_2$ deposition constant of 1.05 $hr^{-1}$, and 1.36 ACH in Seoul, with the measured residential $NO_2$ deposition constant of 0.94 $hr^{-1}$. Source strengths of $NO_2$ were 15.8 $\pm$ 18.2 ${\mu}g$/$m^3$.hr and 44.7 $\pm$ 38.1${\mu}g$/$m^3$.hr in Brisbane and Seoul, respectively. In conclusion, indoor environmental factors were effectively characterized by this method using multiple indoor and outdoor measurements.

• Proceedings of the Korean Environmental Health Society Conference
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• 2004.12a
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• pp.45-50
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• 2004

Indoor air quality can be affected by indoor sources, ventilation, decay and outdoor levels. Alt hough technologies exist to measure these factors, direct measurements are often difficult. The purpose of this study was to develop an alternative method to characterize indoor environmental factors by multiple indoor and outdoor measurements. Daily indoor and outdoor NO2 concentrations were measured for 30 consecutive days in 28 houses in Brisbane, Australia, and for 21 consecutive days in 37 houses in Seoul, Korea. Using a mass balance model and regression analysis, penetration factor (ventilation rate divided by the sum of ventilation rate and deposition constant) and source strength factor (source strength divided by the sum of ventilation rate and deposition constant) were calculated using multiple indoor and outdoor measurements. Subsequently, the ventilation rate and NO2 source strength were estimated. Geometric means of ventilation rate were 1.44 ACH in Brisbane, assuming a residential NO2 deposition constant of 1.05 hr-1, and 1.36 ACH in Seoul, with the measured residential NO2 deposition constant of 0.94 hr-1. Source strengths of N02 were 15.8 ${\pm}$ 18.2 ${\mu}$g/m3${\cdot}$hr and 44.7 ${\pm}$ 38.1 ${\mu}$g/m3${\cdot}$hr in Brisbane and Seoul, respectively. In conclusion, indoor environmental factors were effectively characterized by this method using multiple indoor and outdoor measurements.

• Journal of the Korean institute of surface engineering
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• v.13 no.3
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• pp.146-154
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• 1980

The effects of various electrodeposition conditions (deposition temperature and cathode current density) on preferred orientation and microhardness of electrodeposited Ni-Sn and Sn-Zn alloys were studied. At deposition temperatures from 25$^{\circ}$ to 95$^{\circ}C$ and constant cathode current density of 270 and 530 A/$m^2$ Ni-Sn and Sn-Zn were codeposited in chloride-fluoride acid and stannate-cyanide alkaline electrolyte bath respectively. Ni-Sn alloy deposited at temperatures from 25$^{\circ}$ to 35$^{\circ}C$ was composed of single phase of $Ni_3Sn_4$ with 73 wt.% Sn and the one deposited at temperatures from 45$^{\circ}$ to 95$^{\circ}C$ was made of multiphase mixture of NiSn, $Ni_3Sn_2$ and $Ni_3Sn_4$ with nearly equiatomic composition (65.5 wt.% Sn). The random orientation of thermody-namically metastable NiSn phase (hexagonal structure) predominated at deposition temperature range 25$^{\circ}$-45$^{\circ}C$, and the strong (110) preferred orientation was found at 65$^{\circ}$-85$^{\circ}C$ and then disappeared again at 95$^{\circ}C$. The microhardness of Ni-Sn deposits increased with deposition temperature up to 85$^{\circ}C$, and then decreased at constant cathode current density. The preferred orientation and the maximum microhardness were discussed in terms of lattice contractile stress which result from desorption of hydrogen atom absorbed in deposit lattice. The Sn content of Sn-Zn alloy deposits increased with deposition temperature up to 75$^{\circ}C$, and then decreased at constant cathode current density of 530 A/$m^2$. It also decreased with cathode current density up to 530 A/$m^2$, and then increased at constant deposition temperature of 25$^{\circ}C$. Sn-Zn alloy deposits were composed of two-phase mixture of ${beta}$-Sn and Zn. The preferred orientations of ${beta}$-Sn (tetragonal structure) changed with deposition temperature. The microhardness of Sn-Zn deposits decreased with deposition temperature. It also increased with cathode density up to 530 A/$m^2$, and then decreased at constant deposition temperature of 25$^{\circ}C$. The microhardness of Sn-Zn deposits was observed to be determinded more by the Sn content than by the preferred orientation.

• Journal of the Korean Vacuum Society
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• v.12 no.S1
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• pp.83-87
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• 2003

Zirconium oxide films have been synthesized by radio-frequency magnetron sputtering deposition on n-Si(001) substrate with metal zirconium target at variant $O_2$ partial pressures. The influences of $O_2$ partial pressures of the morphology, deposition rate, microstructure, and the dielectric constant of $ZrO_2$ have been discussed. The results show that deposition rate of $ZrO_2$ films decreases, the roughness, and the thickness of the native $SiO_2$ interlayer increases with the increase of $O_2$ partial pressure. $ZrO_2$ films synthesized at low $O_2$ partial pressure are amorphous and monoclinic polycrystalline in nanometer scale at low $O_2$ partial pressure. The relative dielectrics of $ZrO_2$ films are in the range of 12 to 25.

• Journal of the Semiconductor & Display Technology
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• v.6 no.3
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• pp.41-45
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• 2007

The (SrCa)$TiO_3$(SCT) thin films were deposited on Pt-coated electrode(Pt/TiN/$SiO_2$/Si) using RF sputtering method according to the deposition condition. The crystallinity of SCT thin films were increased with increase of deposition temperature in the temperature range of $100{\sim}500[^{\circ}C]$. The optimum conditions of RF power and Ar/$O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about $18.75[{\AA}/min]$ at the optimum condition. The composition of SCT thin films deposited on Si substrate is close to stoichiometry (1.081 in A/B ratio). The maximum dielectric constant of SCT thin film was obtained by annealing at $600[^{\circ}C]$.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2002.11a
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• pp.34-46
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• 2002

Si-O-C-H films with a low dielectric constant were deposited on a p-type Si(100) substrate using a mixture gases of the bis-trimethylsilyl-methane (BTMSM) and oxygen by an inductively coupled plasma chemical vapor deposition (ICPCYD). High density plasma of about $~10^{12}\textrm{cm}^{-3}$ is obtained at low pressure (<400 mTorr) with rf power of about 300W in ICPCVD where the BTMSM and $O_2$ gases are fully dissociated. Fourier transform infrared (FTIR) spectra and X-ray photoelectron spectroscopy (XPS) spectra show that the film has $Si-CH_3$ and OH-related bonds. The void within films is formed due to $Si-CH_3$ and OH-related bonds after annealing at $500^{\circ}C$ for the as-deposition samples. The lowest relative dielectric constant of annealed film at $500^{\circ}C$ is about 2.1.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.461-461
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• 2010

For a low dielectric constant inter-metal dielectric application, the low-k SiCOH film with a dielectric constant of 2.8-3.2 has been deposited by plasma-enhanced chemical vapor deposition with decamethylcyclopentasiloxane, cyclohexane, and helium which is carrier gas. In this work, we investigated chemical deposition rate, dielectric constant, characterization of plasma polymer films according to temperature(25C-200C) of substrate and change of component concentration. We measured impedance by using V-I prove during process. From experimental result, deposition rate decrease with increasing temperature. Through real time impedance analysis of chamber, we find corelation between film thickness and impedance by assuming equivalent circuit.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.960-964
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• 2004

[ $Ba_2NaNb_5O_{15}$ ](BNN) thin films have been prepared by the ion beam sputter deposition (IBSD) method on Pt coated Si substrate at temperature as low as $600^{\circ}C$ XRD, SEM were used to investigate the crystallization and microstructure of the films. It was found that the films were crack-free and uniform in microstructure. The electric properties of thin films were carried out by observation of D-E hysteresis loop, dielectric constant and leakage current. It was found the deposition rate strongly influenced the phase formation of the films, where the phase of $BaNb_2O_6$ was always formed when the deposition rate was high. However, the single phase (tungsten bronze structure ) BNN thin film was obtained with the deposition rate as low as $22{\AA}/min$. The remanent polarization Pr and dielectric constant are about 1-2 ${\mu}C/cm^2$ and $100\sim200$, respectively. It was also founded the electric properties of thin films were influenced by the deposition rate. The Pr and dielectric constant of films increased with the decrease of deposition rate. The effects of annealing temperature and annealing time to the crystallization behavior of films were studied. The crystallization of thin film started at about $600^{\circ}C$. The adequate crystallization was gotten at the temperature of $650^{\circ}C$ when the annealing time is 0.5 hour or at the temperature of $600^{\circ}C$ when the annealing time is long as 6 hours.

• Proceedings of the KSME Conference
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• 2007.05b
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• pp.2032-2037
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• 2007

Numerical analysis was conducted to investigate the atomic layer deposition(ALD) of silicon nitride using silane and ammonia as precursors. The present study simulated the surface reactions for as-deposited $Si_3N_4$ as well as the kinetics for the reactions of $SiH_4$ and $NH_3$on the semiconductor wafer. The present numerical results showed that the ALD process is dependent on the activation constant. It was also shown that the low activation constant leads to the self-limiting reaction required for the ALD process. The inlet and wafer temperatures were 473 K and 823 K, respectively. The system pressure is 2 Torr.