Proceedings of the Korean Society Of Semiconductor Equipment Technology (한국반도체및디스플레이장비학회:학술대회논문집)
- 2002.11a
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- Pages.34-46
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- 2002
Chemical structure evolution of low dielectric constant SiOCH films during plasma enhanced plasma chemical vapor deposition and post-annealing procedures
- Xu, Jun (Dept. of Physics, Cheju National University) ;
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Choi, Chi-Kyu
(Dept. of Physics, Cheju National University)
- Published : 2002.11.01
Abstract
Si-O-C-H films with a low dielectric constant were deposited on a p-type Si(100) substrate using a mixture gases of the bis-trimethylsilyl-methane (BTMSM) and oxygen by an inductively coupled plasma chemical vapor deposition (ICPCYD). High density plasma of about
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