• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.1277_1278
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• 2009

Amorphous oxide semiconductor $InGaZnO_4$(IGZO) is a very promising candidate of channel layer in transparent thin film trasisitor(TTFT) because of its high mobility and high transparency in visible light region. Amorphous IGZO films were deposited at room temperature on a fused silica substrate using pulsed laser deposition method. In-situ post annealing was carried out at 150-450C right after film deposition. The $O_2$ partial pressures during the deposition and the post annealing was fixed to 10mTorr. The electron transport properties of the amorphous IGZO films were improved by thermal annealing. The temperature range in which the improvement of the electrical properties, was 150C~300C.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.1349_1350
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• 2009

Thin films of pp(ST-Co-VA) were fabricated by plasma deposition polymerization (PVDPM) technique. Properties of the plasma polymerized pp(ST-Co-VA) thin films were investigated for application to semiconductor device as insulator. Thickness, dielectric property, composition of the pp(ST-Co-VA) thin films were investigated considering the relationship with preparation condition such as gas pressure and deposition time. In order to verify the possibility of application to organic thin film transistor, a pentacene thin film was deposited on the pp(ST-Co-VA) insulator by vacuum thermal evaporation technique. Crystalline property of the pentacene thin film was investigated by XRD and SEM, FT-IR. Surface properties at the pp(ST-Co-VA)/pentacene interface was investigated by contact angle measurement. The pp(ST-Co-VA) thin film showed a high-k (k=4.6) and good interface characteristic with pentacene semiconducting layer, which indicates that it would be a promising material for organic thin film transistor (OTFT) application.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2007년도 춘계학술대회A
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• pp.1532-1536
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• 2007

A plastic substrate with tiny rectangular pillars less than 100nm is injection molded to study pattern replication in injection molding. The size of the substrate is 50mm ${\times}$ 50mm and 1mm thick. The substrate has 9 patterned areas of which size is 2mm ${\times}$ 2mm respectively. The lengths of the pillars are 50nm, 100nm, 150nm and 200nm and the width and height are 50nm and about 100nm respectively. A pattern master is fabricated by e-beam writing using positive PR(photo resist) and then a nickel stamper replicated from the PR master by nickel electro-plating. Cr is deposited on the PR pattern master before nickel electro-plating as a conducting layer. Using this nickel stamper, several injection molding experiments are done to investigate effects of the injection molding parameters such as mold temperature, injection rate, packing pressure or pattern location on the replication of the patterns under 100nm.

• 한국윤활학회:학술대회논문집
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• 한국윤활학회 2004년도 학술대회지
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• pp.66-74
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• 2004

The sliding wear behavior of $ZrO_2-22wt\%MgO\;(MZ)\;and\;ZrO_2-8wt\%Y_2O_3\;(YZ)$ deposited on a casting aluminum alloy with bond layer (NiCrCoAlY) by plasma spray against an SiC ball was investigated under dry test conditions at room temperature. At all load conditions, the wear mechanisms of the MZ and the YZ coatings were almost the same. The wear mechanisms involved the forming of a smooth film by material transferred on the sliding surface and pullout. The wear rate of the MZ coating was less than that of the YZ coating. With an increase normal load the wear rate of the studied coatings increased. The SEM was used to examine the sliding surfaces and elucidate likely wear mechanisms. The EDX analysis of the worn surface indicated that material transfer was occurred from the SiC ball to the disk. It was suggested that the material transfer played an important role in the wear performance.

• 센서학회지
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• 제23권5호
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• pp.291-294
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• 2014

In this study, a chemiresistive sensor based on one-dimensional $WO_3$ nanostructures is presented for application in non-invasive medical diagnostics. $WO_3$ nanostructures were used as an active gas sensing layer and were deposited onto a $SiO_2/Si$substrate using Pt interdigitated electrodes (IDEs). The IDE spacing was $5{\mu}m$ and deposition was performed using RF sputter with glancing angle deposition mode. Pt IDEs fabricated by photolithography and dry etching. In comparison with thin film sensor, sensing performance of nanostructure sensor showed an enhanced response of more than 20 times when exposed to 50 ppm acetone at $400^{\circ}C$. Such a remarkable faster response can pave the way for a new generation of exhaled breath analyzers based on chemiresistive sensors which are less expensive, more reliable, and less complicated to be manufactured. Moreover, presented sensor technology has the potential of being used as a personalized medical diagnostics tool in the near future.

• 한국진공학회지
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• 제7권3호
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• pp.248-254
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• 1998

PECVD(Plasma Enhanced Chemical Vapor Deposition) 방법을 이용하여 비정질 고 상 탄소 박막의 하나인 유사 다이아몬드(Diamond-Like-Carbon; DLC) 박막을 증착하였다. FT-IR Spectroscopy와 Raman Scattering 등을 통해 박막의 구조적 특징을 조사하였는데, 박막은 microcrystalline diamond domain과 graphitelike carbon domain들이 수소화된 $sp^3$사 면체 구조의 비정질 탄소에 의해 그물 구조로 연결되어진 것으로 보인다. 이러한 추정은 I-V 특성 조사의 결과와도 좋은 일치를 보이는데, 특히 I-V조사에서는 전류의 갑작스러운 증가가 관측되어졌으며 이것은 graphitelike carbon domin들간의 전자 tunneling 현상으로 이해되어진다. 그리고 대단히 얇은 탄소 박막에 대한 Raman산란 조사에서는 증착 초기 상 태에 $\beta$-SiC층이 형성되어지는 것을 확인할 수 있었다.

• 열처리공학회지
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• 제15권3호
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• pp.118-126
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• 2002

TiCN thin films were deposited on tool steels at $510^{\circ}C$ by PECVD from a $TiCl_4+N_2+CH_4+H_2+Ar$ gaseous mixture. The microstructures and preferred orientation were investigated. The micro-scratch tests were performed using a system equipped with an acoustic emission sensor. Critical loads were determined to evaluate the adhesion of TiCN to substrate. The influences of the microstructures of substrates, double layered coatings, and coatings after nitriding(duplex coating) were investigated. The experimental results showed that the microstructures of substrates and double layered coating did not affect the critical loads considerably. By the duplex coating, critical loads were not always increased. In some cases, duplex coatings decreased critical loads significantly despite of absence of black layer. In this study, we tried to relate the results of scratch test to the residual stress analysis. Nitriding before the coating reduces the tensile residual stress in the film, which gives rise to low critical load in scratch test.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권1호
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• pp.13-18
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• 2000

We have fabricated LB ultra-thin films of maleate system by LB technique and evaluated the deposited status of LB ultra-thin films by I-V characteristics such as capacitance. It was found that the thickness of LB ultra-thin per layer is $27~30[{\AA}]$ by XRD. And, we have known that the conductivity along the horizontal direction of LB ultra-thin films was about $10^{-8}[S/cm]$, it corresponds to the semiconducting materials. Also, the I-V characteristics along the vertical direction of LB ultra-thin films was dominated by Schottky type current, the activation energy obtained by current-temperature characteristics was about 0.84[eV] and the conductivity was about $10^{-14}[S/cm]$, it corresponds to the insulator. And, the anisotropic conduction mechanism of the LB ultra-thin films in vertical direction and horizontal direction is determined by the hydrophilic group and the hydrophobic group in LB ultra-thin films. The above results are applicable to the semiconductor devices such as switching device, which function at the molecular level.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권1호
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• pp.24-29
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• 2000

We propose a simple method to control the crystallization depth of amorphous silicon (a-Si) deposited by PECVD or LPCVD during the excimer laser annealing (ELA). Employing the new method, we have formed poly-Si/a-Si double film and fabricated a new poly-Si TFT with vertical a-Si offsets between the poly-Si channel and the source/drain of TFT without any additional photo-lithography process. The maximum leakage current of the new poly-Si TFT decreased about 80% due to the highly resistive vertical a-Si offsets which reduce the peak electric field in drain depletion region and suppress electron-hole pair generation. In ON state, current flows spreading down through broad a-Si cross-section in the vertical a-Si offsets and the current density in the drain depletion region where large electric field is applied is reduced. The stability of poly-Si TFT has been improved noticeably by suppressing trap state generation in drain region which is caused by high current density and large electric field. For example, ON current of the new TFT decreased only 7% at a stress condition where ON current of conventional TFT decreased 89%.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 추계학술대회 논문집
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• pp.53-56
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• 1998

Electroluminescent(EL) devices based on organic materials have been of great interest due to their possible applications for large-area flat-panel displays, where they are attractive because of their capability of multicolor emission, and low operation voltage. In this study, glass substrate/ITO/Eu(TTA)$_3$(Phen)/Al(A), glass substrate/ITO/TPD/Eu(TTA)$_3$(p-hen)/Al(B) and glass substrate/ITO/TPD/Eu(TTA)$_3$(phen)/AlQ$_3$/Al(C) structures were fabricated by vacuum evaporation method. where aromatic diamine(TPD) was used as a hole transporting material, Eu(TTA)$_3$(phen) as an emitting material. and tris(8-hydroxyquinoline)Aluminum(AlQ$_3$) as an electron transporting layer. Electroluminescent(EL) and I-V characteristics of Eu(TTA)$_3$(Phen) with a various thickness were investigated. This structure shows the red EL spectrum, which is almost the same as the PL spectrum of Eu(TTA)$_3$(phen). I-V characteristics of this structure show that turn-on voltage was 9V and current density was 0.01A/$\textrm{cm}^2$ at a dc operation voltage of 9V. Electrical transporting phenomena of these structures was explained using the trapped- charge-limited current model with I-V characteristics.