• Journal of the Korean Vacuum Society
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• v.10 no.3
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• pp.374-379
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• 2001

We have investigated the annealing effects on the optical properties of InAs quantum dots(QDs) capped with InGaAs(sample QDl), where InGaAs layer was deposited by opening Gallium, Arsenic, Indium and Arsenic shutters alternately with 3 periods, grown by molecular beam epitaxy. The emission wavelength of the sample of InAs QDs capped by GaAs barriers was observed to be blue-shifted as the annealing temperature was increased. On the other hand, the photoluminescence(PL) peak position of sample QD1 was observed to be red-shifted at the annealing temperature of up to $600^{\circ}C$ and, then, it was found to be blue-shifted at temperatures ranging from 700 to $800^{\circ}C$. The full width at half maximum values of sample QD1 subjected to annealing treatments show different behavior compared to typical InAs quantum dot structures.

• Journal of the Korean Vacuum Society
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• v.10 no.3
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• pp.321-327
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• 2001

Ti-Si-N films obtained by using RF reactive sputtering of targets with various Ti/Si ratios in a $N_2(Ar+N_2)$ gas mixture have been investigated in terms of films resistivity and diffusion barrier performance. The chemical bonding state of Si in the Ti-Si-N film which contained a higher Si content was in the form of amorphous $Si_3N_4$, producing increased film resistivity with increased $N_2$flow rate. Lowering the Si content in the deposited Ti-Si-N film favored the formation of crystalline TiN even at low $N_2$flow rates, and leads to low film resistivity. In addition increasing the N content led to Ti-Si-N films having a higher density and compressive stress, suggesting that the N content in the films appear to be one of the most important factors affecting the diffusion barrier characteristics. Consequently, we proposed the optimum composition in the range of 29~49 at.% of Ti, 6~20 at.% of Si, and 45~55 at.% of N for the Ti-Si-N films having both low resistivity and excellent diffusion barrier performance.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.3 s.32
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• pp.91-97
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• 2004

PBT thin films were formed by rf-magnetron sputtering on $Pt/Ti/SiO_2/Si$ substrate. Bulk-PZT target containing $5\%$-excess PbO was used. After PZT thin films had been deposited at room temperature, remaining portion of the thin film was formed by in-situ process. The ferroelectric perovskite phase was formed at $650^{\circ}C$. The leakage current property was improved dramatically by 2-step sputtering, and in the sample containing optimum thickness of room temp.-layer very low leakage current of $2{\times}10^{-7}A/cm^2$ was shown. As a result of the investigation on the leakage current mechanism, the electrical conduction mechanism in all PZT thin films formed by several conditions was confirmed as bulk-limited mechanism.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.6
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• pp.235-239
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• 2011

TiCrN layers (Ti : Cr = 20 : 80 and 5 : 95 wt%) were deposited on Inconel 617 and the effect of TiCrN coating on the high temperature stability of Inconel 617 up to $1000^{\circ}C$ was examined. XRD analysis and microstructural observation showed that vigorous and inhomogenous Cr diffusion to the surface was suppressed by TiCrN layer compare to the uncoated Inconel 617. This led to a distinctive enhancement in thermal oxidation resistance of Inconel 617.

• Journal of the Korean Ceramic Society
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• v.43 no.2 s.285
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• pp.85-91
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• 2006

Electron Beam Physical Vapor Deposition (EB-PVD) was applied to fabricate a thin film YSZ electrolyte with large area on the porous NiO-YSZ anode substrate. Microstructural and thermal stability of the as-deposited electrolyte film was investigated via SEM and XRD analysis. In order to obtain an optimized YSZ film with high stability, both temperature and surface roughness of substrate were varied. A structurally homogeneous YSZ film with large area of $12\times12\;cm^2$ and high thermal stability up to $900^{\circ}C$ was fabricated at the substrate temperature of $T_s/T_m$ higher than 0.4. The smoother surface was proved to give the better film quality. Precise control of heating and cooling rate of the anode substrate was necessary to obtain a very dense YSZ electrolyte with high thermal stability, which affords to survive after post heat treatment for fabrication a cathode layer on it as well as after long time operation of solid oxide fuel cell at high temperature.

• Journal of the Korean GEO-environmental Society
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• v.7 no.3
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• pp.43-54
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• 2006

In this paper, the uniaxial, triaxial compression tests and consolidation tests on the clay sample substituted initial pore water for pollutant were performed to evaluate the change in geotechnical properties of the contaminated clay. The contaminant transport analysis on embankment type landfill using the MT3D model was also performed to evaluate the extent of transport and diffusion. There was tendency that strength, compressibility and permeability has increased with the increase in the concentration of NaCl solution. The increase in the strength and compressibility of sample saturated with leachate was higher than samples saturated with NaCl solution, but in the permeability coefficient was lower. As the result of contaminant transport analysis, the predicted concentration was in high with the increase in the initial concentration of $Cl^-$ ion and increased in a non-linear form. The transportation distance calculated with use of regression equation between the distance from contaminant source and the concentration of $Cl^-$ ion was increased with the increase in the initial concentration.

• Journal of the Korean GEO-environmental Society
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• v.15 no.8
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• pp.13-21
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• 2014

The Plastic Board Drain is used to improve soft soils deposited in container terminal area at a port. This paper describes settlement behavior of soft ground in this area from PBD installation to the time of operating facilities. Previous researches focused on soil improvement effect of PBD, that is, the settlement occurred during ground improvement period. The residual settlement occurred during operating the facility is very important from the maintenance and management point of view. However, the study of this residual settlement has been rarely conducted. In this study, by analyzing the measured settlement data obtained from the container terminal area at the port, it was verified that the residual settlement induced during operating facilities occurred in a layer with PBD improvement. In addition, by comparison the settlement predicted by a numerical analysis with the settlement measured in the field, it was confirmed that the actual settlement is in the range of predicted settlement.

• The korean journal of orthodontics
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• v.47 no.1
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• pp.3-10
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• 2017

Objective: Microbial aggregation around dental implants can lead to loss/loosening of the implants. This study was aimed at surface treating titanium microimplants with silver nanoparticles (AgNPs) to achieve antibacterial properties. Methods: AgNP-modified titanium microimplants (Ti-nAg) were prepared using two methods. The first method involved coating the microimplants with regular AgNPs (Ti-AgNP) and the second involved coating them with a AgNP-coated biopolymer (Ti-BP-AgNP). The topologies, microstructures, and chemical compositions of the surfaces of the Ti-nAg were characterized by scanning electron microscopy (SEM) equipped with energy-dispersive spectrometer (EDS) and X-ray photoelectron spectroscopy (XPS). Disk diffusion tests using Streptococcus mutans, Streptococcus sanguinis, and Aggregatibacter actinomycetemcomitans were performed to test the antibacterial activity of the Ti-nAg microimplants. Results: SEM revealed that only a meager amount of AgNPs was sparsely deposited on the Ti-AgNP surface with the first method, while a layer of AgNP-coated biopolymer extended along the Ti-BP-AgNP surface in the second method. The diameters of the coated nanoparticles were in the range of 10 to 30 nm. EDS revealed 1.05 atomic % of Ag on the surface of the Ti-AgNP and an astounding 21.2 atomic % on the surface of the Ti-BP-AgNP. XPS confirmed the metallic state of silver on the Ti-BP-AgNP surface. After 24 hours of incubation, clear zones of inhibition were seen around the Ti-BP-AgNP microimplants in all three test bacterial culture plates, whereas no antibacterial effect was observed with the Ti-AgNP microimplants. Conclusions: Titanium microimplants modified with Ti-BP-AgNP exhibit excellent antibacterial properties, making them a promising implantable biomaterial.

• KSBB Journal
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• v.10 no.1
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• pp.105-112
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• 1995

The fiber-optic biosensor using enzyme-immobilized Langmuir-Blodgett film is developed fort the measurement of ethanol. The enzyme, alcohol dehydrogenase, is immobilized at the molecular level on the arachidic acid monolayer using Langmuir-Blodgett film technique. Based on the ordered multisubstrate mechanism, the immobilized enzyme kinetics is investigated. The optical sensing system is proposed, and sensor signal is proportional to ethanol concentration and is related wish the number of enzyme layers. As the number of deposited LB film layer increases up to 20 1ayers, the high ethanol concentration of 45mM can be measured without the saturation of signal. Surface pressure-area isotherm is measured for the three-different charged-lipids. Arachidic acid is the most suitable for the adsorption of alcohol dehydrogenase based on electrostatic force.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.26 no.3
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• pp.428-435
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• 2002

Pyroelectric $Pb(Zr_{0.3}Ti_{0.7})O_3$ (PZT30/70) thin film IR detectors has been fabricated and characterised. The PZT30/70 thin film was deposited onto $Pt/Ti/Si_3N_4/SiO_2/Si$ substrate by the sol-gel process. Four different substrate conditions were studied for their effects on the pyroelectric responses of the IR detectors. The substrate conditions were the combinations of the Si etching and the Pt/Ti patterning. In the Si etched substrate, the $Si_3N_4/SiO_2$ composite layer was used as silicon etch-stop, and was used as the membrane to support the PZT pyroelectric film element as well. The measured pyroelectric current and voltage responses of detectors fabricated on the micro-machined thin $Si_3N_4/SiO_2$ membrane were two orders higher than those of the detectors on the bulk-silicon. For detectors on the membrane substrate, the Pt/Ti patterned detectors showed a 2-times higher pyroelectric response than that of not-patterned detectors. On the other hand, the pyroelectric response of the detectors on the not-etched Si substrate was almost the same, regardless of the Pt/Ti patterning. It was also found that the rise time strongly depended on the substrate thickness: the thicker the substrate was, the longer the rise-time.