• Journal of the Korean institute of surface engineering
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• v.28 no.6
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• pp.386-392
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• 1995

The RF planar magnetron sputtering technique was used to fabricate uniform ZnO/$SiO_2$/Si thin films at high growth rate. A detailed crystallographic character of these thin films has been carried oct using XRD, XRC, and SEM. These thin films have the configuration of c-axis orientation perpendicular to $SiO_2$/ Si substrate. The dependence of the thickness of ZnO/$SiO_2$/Si films on applied RF power parameters was also investigated. The crystallinity of films was improved as the substrate temperature was high, RF input power increased, and Ar/$O_2$ ratio decreased. Also, most of ZnO films fabricated on $SiO_2$/Si were suitable for SAW filter since a standard deviation of XRC (002) peak was less than $6^{\circ}$. The presence of the $SiO_2$ layer has a beneficial effect on the crystalline quality of the grown ZnO films.

• Journal of the Korean institute of surface engineering
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• v.44 no.6
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• pp.269-276
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• 2011

Phase evolution and tribological behavior of Cr-Mo-N multi compositional films with different interlayer were investigated. The films were deposited by hybrid PVD (Physical Vapor Deposition) system consisted of dc unbalanced magnetron (UBM) sputtering and arc ion plating (AIP) sources. A pure molybdenum (Mo) was used as sputtering target and also a pure Cr was used as AIP target to form the Cr-Mo-N films. Various growth planes were found, no textured surface, in all of the multi composition films. Maximum value of microhardness was measured in Cr-Mo-N film with Mo interlayer as 29 GPa. Composition film was mainly showed the aspect of the adhesive wear than CrN film. The friction coefficient was decreased from 0.6 for pure CrN coating to 0.35 for Cr-Mo-N film with Mo interlayer. This result may come from the formation of metal oxide tribo-layer which is known as solid lubricant during the wear test.

• Journal of Sensor Science and Technology
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• v.16 no.4
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• pp.259-262
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• 2007

This paper describes the electrical characteristics of polycrystalline (poly) 3C-SiC thin film diodes, in which poly 3C-SiC thin films on n-type and p-type Si wafers, respectively, were deposited by APCVD using HMDS, $H_{2}$, and Ar gas at $1150^{\circ}C$ for 3 hr. The schottky diode with Au/poly 3C-SiC/Si (n-type) structure was fabricated. Its threshold voltage ($V_{bi}$), breakdown voltage, thickness of depletion layer, and doping concentration ($N_{D}$) value were measured as 0.84 V, over 140 V, 61 nm, and $2.7{\times}10^{19}cm^{-3}$, respectively. Moreover, for the good ohmic contact, Al/poly 3C-SiC/Si (n-type) structure was annealed at 300, 400, and $500^{\circ}C$, respectively for 30 min under the vacuum condition of $5.0{\times}10^{-6}$ Torr. Finally, the p-n junction diodes fabricated on the poly 3C-Si/Si (p-type) were obtained like characteristics of single 3CSiC p-n junction diode. Therefore, poly 3C-SiC thin film diodes will be suitable for microsensors in conjunction with Si fabrication technology.

• Journal of Sensor Science and Technology
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• v.23 no.3
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• pp.170-172
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• 2014

$CO_2$ sensor was used only one solid electrolyte in many cases. To improve the sensing characteristics of $CO_2$ sensors, solid electrolyte $CO_2$ sensor has been developed by bi-electrolyte type sensor using Na-Beta-alumina and YSZ. However, in many further studies, bi-electrolyte type sensor was made by pellet pressed by press machine and additional treatment for formation of interface. In the aspect of mass production, using thick film and additional treatment is not suitable. In this study, $CO_2$ sensor was fabricated by bi-electrolyte structure which was made by an NBA paste layer deposited on YSZ pellet and fired at $1650^{\circ}C$ for 2 hour. The formation of stable interface between YSZ and NBA were confirmed by SEM image. When the type IV electrochemical cell arrangement represented by $CO_2,O_2,Pt{\mid}Li_2CO_3-CaCO_3{\parallel}NBA{\parallel}YSZ{\mid}O_2,Pt$ is used to measure the $CO_2$ concentration in air. This sensor EMF should depend only on the concentration of $CO_2$ by logarithmic. Also, sensor shows $P_{CO_2}$ and EMF relationship like nerstian reaction at a temperature of $450^{\circ}C$.

• Progress in Superconductivity
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• v.2 no.2
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• pp.92-96
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• 2001

We have fabricated a modified hairpin-type YBa$_2$Cu$_3$O$_{7-{\delta}}$ (YBCO) 2-pole microstrip bandpass filter with the center frequency of 5.8 GHz. We designed a hairpin-type filter with interdigital-coupled inner poles to improve the filter performance. Compared to a typical hairpin-type filter of the same size, the center frequency, the bandwidth and the insertion loss appeared smaller by 14.5% ,29.6%, and 0.55 dB, respectively. The dimensions of the filter were 13.7mm ${\times}$3.3 mm. YBCO films deposited on r-cut sapphire buffered with a CeO$_2$thin layer were used fur making the filter.

• Progress in Superconductivity
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• v.3 no.2
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• pp.252-256
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• 2002

We studied YBCO films for current limiting of the resistive type which utilizes a transition from superconducting to normal state caused by exceeding critical current. The films were deposited on sapphire substrates and covered by gold top layer. The current limiting element consists of 2 mm wide YBCO stripes connected in series. A serious problem in using YBCO films for current limiting is inhomogeneities caused by imperfect manufacturing. Therefore simultaneous quench is a difficult problem when elements for current limiting are connected in series. So some researchers have recently proposed using magnetic field and heating for simultaneous quench. We have measured extended exec trim field-current density(E-J) characteristics for current limiting elements of YBCO films in applied magnetic field of 0 - 130 mT. And we have investigated quench characteristics in current limiting elements and between elements of YBCO films in applied magnetic field. The result of the experiments show that the presence of applied magnetic fields induces uniform quench distribution fur the stripes in element at $50V_{rms}$, otherwise non-uniform quenches were observed. And simultaneous quenches between elements were investigated at $150V_{rms}$. We suggest that suppressing the critical current by increased fields due to fault current effectively forced the stripes of higher $J_{c}$(0) to quench, resulting in equalizing quench times.s.s.s.

• Tribology and Lubricants
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• v.33 no.6
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• pp.275-281
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• 2017

In this work, we have fabricated anodic aluminum oxide (AAO) with ordered nanoscale porosity through an anodization process. We deposited gold and nano-organic thin films on the porous AAO surface to protect its structure and reduce friction. We investigated the tribological characteristics of the porous AAO with respect to the protective surface coatings using tribometers. While investigating the frictional characteristics of the samples by applying normal forces of the order of micro-Newton, we observed that AAO without a protective coating exhibits the highest friction coefficient. In the presence of protective surface coatings, the friction coefficient decreases significantly. We applied normal forces of the order of milli-Newton during the tribotests to investigate the wear characteristics of AAO, and observed that AAO without protective surface coatings experiences severe damage due to the brittle nature of the oxide layer. We observed the presence of several pieces of fractured particles in the wear track; these fractured particles lead to an increase in the friction. However, by using surface coatings such as gold thin films and nano-organic thin films, we confirmed that the thin films with nanoscale thickness protect the AAO surface without exhibiting significant wear tracks and maintain a stable friction coefficient for the duration of the tribotests.

• Journal of Welding and Joining
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• v.17 no.4
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• pp.26-31
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• 1999

An attempt was made in this study to investigate the brazing characteristics of Zr-Be binary amorphous alloys for the development of a new brazing filler metal for joining Zircaloy-4 nuclear fuel cladding tubes. This study was also aimed at the feasibility study of rapidly solidified amorphous alloys to substitute the conventional physical vapor-deposited(PVD) metallic beryllium. The $Zr_{1-x}Be_{x}$($0.3\leq$x$\leq0.5$) binary amorphous alloys were produced in the ribbon form by the melt-spinning method. It was confirmed by x-ray diffraction that the ribbons were amorphous. The amorphous. the amorphous alloys were used to join bearing pads on Zircaloy-4 nuclear fuel cladding tubes. Using Zr-Be amorphous alloys as filler metals, it was found that the reduction in the tube wall thickness caused by erosion was prevented. Especially, in the case of using $Zr_{0.65}Be_{0.35}$ and $Zr_{0.7}Be_{0.3}$ amorphousalloys, the smooth and spherical primary $\alpha$-Zr particles appeared in the brazed layer, which was the most desirable microstructure from the corrosion-resistance standpoint.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.05a
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• pp.145-146
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• 2006

A fluorine-doped diamond-like carbon (F-DLC) stamp which has high contact angle, high UV-transmittance and sufficient hardness, was fabricated using the following direct etching method: F-DLC is deposited on a quartz substrate using DC and RF magnetron sputtering, PMMA is spin coated and patterned using e-beam lithography and finally, O2 plasma etching is performed to transfer the line patterns having 100 nm line width, 100 nm line space and 70 nm line depth on F-DLC. The optimum fluorine concentration was determined after performing several pre-experiments. The stamp was applied successfully to UV-NIL without being coated with an anti-adhesion layer.

• Journal of the Korean Vacuum Society
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• v.11 no.3
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• pp.159-165
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• 2002

The physical properties of the TiN films deposited by ALD using $TiCl_4$and $NH_3$have been investigated. The TiN deposition rate is ~0.6 $\AA$ under an optimum deposition condition and the resistivity of the TiN films is 200~350 $\mu\Omega$cm . According to the XRD analysis results TiN films are crystallized in the ALD process window. AES analysis results show that the Cl impurity concentration in the TiN films is lower than 1 at% and that the atomic ratio of the TiN films is 1:1. Also it is found by SEM observation that the step coverage of the TiN films on which TiN films with trenches the aspect ratio of which is 10:1 is excellent.