• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.659-659
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• 2013

Recently, graphene has been intensively studied due to the fascinating physical, chemical and electrical properties. It shows high carrier mobility, high current density, and high thermal conductivity compare with conventional semiconductor materials even it has single atomic thickness. Especially, since graphene has fantastic electrical properties many researchers are believed that graphene will be replacing Si based technology. In order to realize it, we need to prepare the large and uniform graphene. Chemical vapor deposition (CVD) method is the most promising technique for synthesizing large and uniform graphene. Unfortunately, CVD method requires transfer process from metal catalyst. In transfer process, supporting polymer film (Such as poly (methyl methacrylate)) is widely used for protecting graphene. After transfer process, polymer layer is removed by organic solvents. However, it is impossible to remove it completely. These organic residues on graphene surface induce quality degradation of graphene since it disturbs movement of electrons. Thus, in order to get an intrinsic property of graphene completely remove of the organic residues is the most important. Here, we introduce modified wet graphene transfer method without PMMA. First of all, we grow the graphene from Cu foil using CVD method. And then, we deposited several metal films on graphene for transfer layer instead of PMMA. Finally, we fabricate graphene FET devices. Our approaches show low defect density and non-organic residues in comparison with PMMA coated graphene through Raman spectroscopy, SEM and AFM. In addition, clean graphene FET shows intrinsic electrical characteristic and high carrier mobility.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.03a
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• pp.8-10
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• 2010

We report the enhancement of hole injection using thermally evaporated $CuO_x$ layer between Ag anode and 4,4'-Bis[N-(1-naphthyl)-N-phenylamino]biphenyl ($\alpha$-NPD) in top-emitting organic light-emitting diode (TEOLED). The operation voltage at the current density of $1mA/cm^2$ of TEOLEDs decreased from 6.2 V to 5.0 V as the $CuO_x$ layer inserted between Ag and $\alpha$-NPD. $\alpha$-NPD was deposited in situ on Ag/$CuO_x$ and Ag anodes, and their interface dipole energies were quantitatively determined using synchrotron radiation photoemission spectroscopy. The dipole energy of Ag/$CuO_x$ was lower by 0.05 eV even though Ag/$CuO_x$ had a higher work function. The work function of Ag/$CuO_x$ is higher by 0.53 eV than that of Ag, resulting in a decrease of the turn-on voltage via reduction of hole injection barrier.

• Journal of Powder Materials
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• v.18 no.5
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• pp.430-436
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• 2011

Joining of NiO-YSZ to 316 stainless steel was carried out with B-Ni2 brazing alloy (3 wt% Fe, 4.5 wt% Si, 3.2 wt% B, 7 wt% Cr, Ni-balance, m.p. 971-$999^{\circ}C$) to seal the NiO-YSZ anode/316 stainless steel interconnect structure in a SOFC. In the present research, interfacial (chemical) reactions during brazing at the NiO-YSZ/316 stainless steel interconnect were enhanced by the two processing methods, a) addition of an electroless nickel plate to NiO-YSZ as a coating or b) deposition of titanium layer onto NiO-YSZ by magnetron plasma sputtering method, with process variables and procedures optimized during the pre-processing. Brazing was performed in a cold-wall vacuum furnace at $1080^{\circ}C$. Post-brazing interfacial morphologies between NiO-YSZ and 316 stainless steel were examined by SEM and EDS methods. The results indicate that B-Ni2 brazing filler alloy was fused fully during brazing and continuous interfacial layer formation depended on the method of pre-coating NiO-YSZ. The inter-diffusion of elements was promoted by titanium-deposition: the diffusion reaction thickness of the interfacial area was reduced to less than 5 ${\mu}m$ compared to 100 ${\mu}m$ for electroless nickel-deposited NiO-YSZ cermet.

• Journal of the Korean Ceramic Society
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• v.38 no.12
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• pp.1150-1154
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• 2001

Silicon oxynitride (SiON) thick films using the core layer of silica optical waveguide have been deposited on Si wafer by PECVD at low temperature (32$0^{\circ}C$) were obtained by decomposition of appropriate mixture of (SiH$_4$+$N_2$O+$N_2$) gaseous mixtures under RF power and SiH$_4$/($N_2$O+$N_2$) ratio deposition condition. Prism coupler measurements show that the refractive indices of SiON layers range from 1.4663 to 1.5496. A high SiH$_4$/($N_2$O+$N_2$) of 0.33 and deposition power of 150 W leads to deposition rates of up to 8.67 ${\mu}{\textrm}{m}$/h. With decreasing SiH$_4$/($N_2$O+$N_2$) ratio, the SiON layer become smooth from 41$\AA$ to 6$\AA$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.102-103
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• 2008

Magnetron Sputtering, MOCVD, Thermal Evaporation에 의해 성장된 ZnO layer에 대한 Dependency Temperature Photoluminescence (PL)를 이용하여 비교 분석을 통해 Deep level emission에 대해 연구하였다. Sputter에 의해 성장된 ZnO 박막은 Violet, Green, Orange-red 영역의 $Zn_i$, $V_o$, $O_i$의 defect에 의한 Deep level emission을 보였고, MOCVD에 의해 성장된 박막은 비교적 산소양이 낮은 성장 조건에서는 blue-green 영역에서, 산소양이 높은 조건에서의 박막은 Orange-red 영역의 Deep level emission을 보였다. Blue-green 영역에서의 emission은 온도가 증가함에 따라 다른 Barrier를 보였는데, 이는 $V_{Zn}$와 $V_o$에 의한 것임을 알 수 있었다. 한편, ZnO nanorods는 $V_o$에 의한 Green 영역에서의 Deep level emission을 보였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.535-536
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• 2008

Multi-layered thin films of ZnS/$Na_3AlF_6$/ZnS/Cr were deposited on glass substrate by evaporation process. ZnS and $Na_3AlF_6$ were selected as high and low refractive index material, and additionally Cr was chosen as mid reflective layer respectively. The multi-layered thin films were prepared in terms of different optical thickness and different staking sequence and layers. The optical properties were systematically characterized with different optical thickness of $Na_3AlF_6$ especially $0.25\lambda$ and $0.5\lambda$. In order to expect the experimental result, the simulation program, the Essential Macleod Program(EMP) was adopted. Based on the results taken by spectrophotometer at viewing angle $45^{\circ}$, the ZnS/$Na_3AlF_6$/ZnS/Cr multi-layered thin film shows purple colour range in $0.25\lambda$， bluish green in $0.5\lambda$, red purple in $0.75\lambda$, and purple in $1.0\lambda$ respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.297-297
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• 2008

Buffer layers play an important role in the development of high critical current density coated conductor. $LaMnO_3$, $SrTiO_3$ and $BaZrO_3$ buffer layers were compatible with MgO surfaces and also provide a good template for growing high current density REBCO(RE=Rare earth) films. Systematic studies on the influences of pulsed laser deposition parameters (deposition temperature, deposition pressure, processing gas, laser energy density, etc.) on microstructure and texture properties of $LaMnO_3$, $SrTiO_3$ and $BaZrO_3$ films as buffer layer deposited on ion-beam assisted deposition MgO (IBAD_MgO) template by pulse laser deposition method, were carried out. These results will be presented together with the discussion on the possible use of this material in HTS coated conductor as buffer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.117-120
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• 1998

In this study, $Al_2O_3/MgO$ bilayer was prepared with Electron-beam evaporation and the properties of the film was investigated in order to improve the property of MgO film, which is used for the protection layer in PDP(P1asma Display Panel). The thickness of $Al_2O_3/MgO$ bilayer was optimized by the Matrix Theory for the fabrication of antireflection structure for 5350A wavelength. The secondary electron emission yields of as-deposited film and annealed film were measured and compared, the bilayer was considered for the applicability as PDP. XRD showed the strong (200) primary peak of MgO. The intensity of (200) peak in the film annealed at 300C was decreased. As the result of SEM analysis for MgO films and Alz03 films, it is considered that the morphology of the films were improved of roughness and it were condensed by annealing.

• Proceedings of the KIEE Conference
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• 1998.07g
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• pp.2536-2538
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• 1998

This paper investigates the residual stress of tetraethoxysilane (TEOS) and 7wt% phosphosilicate glass (PSG), which are commonly used as a sacrificial layer or etch mask in the fabrication of microelectromechanical systems (MEMS). In order to measure residual stress, $2{\mu}m$ thick TEOS and PSG stress measurement structures are fabricated. Polysilicon is used as the sacrificial layer. First the residual stress of an as-deposited 7wt% PSG flim and TEOS film are measured to be-0.3115% and -0.435%, respectively, which are quite large. These films are annealed from $500^{\circ}C$ to $800^{\circ}C$. Annealing has the effects of reducing residual stress. In the case of the 7wt% PSG film, the residual stress becomes +0.00715% after annealing at $625^{\circ}C$ for 150 minutes. In the case of TEOS film, the residual stress reduces to -0.2134% after same condition. Incidentally, this condition is the same condition for depositing a $2{\mu}m$ thick polysilicon at $625^{\circ}C$ at our low pressure chemical vapor deposition (LPCVD) furnace.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.5
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• pp.425-430
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• 2009

$ZrO_2$ film was deposited by facing target sputtering (FTS) system on polyethylene naphthalate (PEN) substrate as a gas barrier layer for flexible organic light emitting devices (FOLEDs), In order to control the heat of the FTS system caused by the ion bombardment in the cathode compared with the conventional sputtering system, the process characteristics of the FTS apparatus are investigated under various sputtering conditions such as the distance between two targets ($d_{TT}$), the distance between the target and the substrate ($d_{TS}$), and the deposition time. The $ZrO_2$ film by the FTS system can reduce the damage on the films because the ion bombardment with high-energy particles like gamma-electrons, Moreover, the $ZrO_2$ film with optimized condition ($d_{TT}$=140 mm) as a function of the distance from center to edge showed a very uniform thickness below 5 % for a deposition time of 3 hours, which can improve the interface property between the anode and the plastics substrate for flexible displays, It is concluded that the $ZrO_2$ film prepared by the FTS system can be applied as a gas barrier layer or an interlayer between the anode and the plastic substrate with good properties of an uniform thickness and a low deposition-temperature.