• Bulletin of the Korean Chemical Society
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• 제32권2호
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• pp.451-454
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• 2011

The traditional BCS superconductors $AOs_2O_6$ (A=K, Rb, and Cs) were investigated to find the relationship between their structures and superconducting transition temperatures. The $T_c$ decreases with increasing the unit cell parameter of $AOs_2O_6$. This is in contrast to the case of conventional BCS superconductivity in a single bond model, where $T_c$ may increase with increasing the the unit cell parameter since the DOS at Fermi level increases as the unit cell parameter increases. Instead, the $T_c$ of a $\beta$-pyrochlore oxide is proportional to the lattice softness of the compound.

• EDISON SW 활용 경진대회 논문집
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• 제5회(2016년)
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• pp.368-372
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• 2016

In this paper, the physics-based analytical model of transition metal dichalcogenide (TMD)-based double-gate (DG) tunneling field-effect transistors (TFETs) is proposed. The proposed model is derived by using the two-dimensional (2-D) Landauer formula and the Wentzel-Kramers-Brillouin (WKB) approximation. For improving the accuracy, nonlinear and continuous lateral energy band profile is applied to the model. 2-D density of states (DOS) and two-band effective Hamiltonian for TMD materials are also used in order to consider the 2-D nature of TMD-based TFETs. The model is validated by using the tight-binding non-equilibrium Green's function (NEGF)-based quantum transport simulation in the case of monolayer molybdenum disulfide ($MoS_2$)-based TFETs.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2004년도 추계학술대회
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• pp.1207-1212
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• 2004

A model for the phonon dispersion relationship for cubic zinc sulfide structure, for example SiC, is developed in terms of two unknown force constants. Born model that incorporates bond bending and bond stretching, is used for the force constants. The force constants are determined by fitting to experimental data. Using only the nearest-neighbor coupling results in $6{\times}6$ sized dynamic matrix. The eigenvalues of dynamics matrix for each wavenumber in 3-D ${\kappa}$ space correspond to frequencies, 3 for optical phonon and 3 for acoustic phonon, which is so-called dispersion relation (${\kappa}$-${\omega}$). The density of state is determined by counting the states for each frequency bin, and the properties such as specific heat and thermal conductivity can be obtained. The specific heat is estimated on this model and compared with experiment and other models, i.e. Debye model, Einstein model and combined Debye-Einstein model. In spite of the simple bond potential model, reasonable agreements are found.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.160-160
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• 2015

InGaZnO (IGZO) thin-film transistors (TFTs) are very promising due to their potential use in high performance display backplane [1]. However, the stability of IGZO TFTs under the various stresses has been issued for the practical IGZO applications [2]. Up to now, many researchers have studied to understand the sub-gap density of states (DOS) as the root cause of instability [3]. Nomura et al. reported that these deep defects are located in the surface layer of the IGZO channel [4]. Also, Kim et al. reported that the interfacial traps can be affected by different RF-power during RF magnetron sputtering process [5]. It is well known that these trap states can influence on the performances and stabilities of IGZO TFTs. Nevertheless, it has not been reported how these defect states are created during conventional RF magnetron sputtering. In general, during conventional RF magnetron sputtering process, negative oxygen ions (NOI) can be generated by electron attachment in oxygen atom near target surface and accelerated up to few hundreds eV by self-bias of RF magnetron sputter; the high energy bombardment of NOIs generates bulk defects in oxide thin films [6-10] and can change the defect states of IGZO thin film. In this study, we have confirmed that the NOIs accelerated by the self-bias were one of the dominant causes of instability in IGZO TFTs when the channel layer was deposited by conventional RF magnetron sputtering system. Finally, we will introduce our novel technology named as Magnetic Field Shielded Sputtering (MFSS) process [9-10] to eliminate the NOI bombardment effects and present how much to be improved the instability of IGZO TFTs by this new deposition method.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.466-468
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• 2012

Amorphous InGaZnO (${\alpha}$-IGZO) thin-film transistors (TFTs) are are very promising due to their potential use in thin film electronics and display drivers [1]. However, the stability of AOS-TFTs under the various stresses has been issued for the practical AOSs applications [2]. Up to now, many researchers have studied to understand the sub-gap density of states (DOS) as the root cause of instability [3]. Nomura et al. reported that these deep defects are located in the surface layer of the ${\alpha}$-IGZO channel [4]. Also, Kim et al. reported that the interfacial traps can be affected by different RF-power during RF magnetron sputtering process [5]. It is well known that these trap states can influence on the performances and stabilities of ${\alpha}$-IGZO TFTs. Nevertheless, it has not been reported how these defect states are created during conventional RF magnetron sputtering. In general, during conventional RF magnetron sputtering process, negative oxygen ions (NOI) can be generated by electron attachment in oxygen atom near target surface and accelerated up to few hundreds eV by self-bias of RF magnetron sputter; the high energy bombardment of NOIs generates bulk defects in oxide thin films [6-10] and can change the defect states of ${\alpha}$-IGZO thin film. In this paper, we have confirmed that the NOIs accelerated by the self-bias were one of the dominant causes of instability in ${\alpha}$-IGZO TFTs when the channel layer was deposited by conventional RF magnetron sputtering system. Finally, we will introduce our novel technology named as Magnetic Field Shielded Sputtering (MFSS) process [9-10] to eliminate the NOI bombardment effects and present how much to be improved the instability of ${\alpha}$-IGZO TFTs by this new deposition method.

• 한국자기학회지
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• 제16권2호
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• pp.111-114
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• 2006

Zinc-blonde 구조를 가지는 CrAs와 MnAs에서 (110)면 원자층으로 이루어진 초격자의 자성을 제일원리 방법을 이용하여 연구하였다. 이를 위해 CrAs와 MnAs의 (110)층이 각기 세 층씩 교대로 반복되는 $(CrAs)_3(MnAs)_3(110)$ 초격자계의 전자구조를 총 퍼텐셜 선형보강평면파동(FLAPW) 에너지띠 방법을 이용하여 계산하였다. Cr-As로 이루어진 층과 Mn-As로 이루어진 층이 접합되는 계면에 있는 Cr과 Mn원자의 자기모멘트를 계산한 결과 각기 $3.07\;\mu_B$와 $3.74\;\mu_B$로 가운데 층의 Cr과 Mn의 자기모멘트 값인 $3.06\;\mu_B$와 $3.76\;\mu_B$보다 약간 크거나 작았다. 계산된 상태밀도로부터 이 계의 전자구조와 반쪽금속성을 고찰하였다.

• 한국자기학회지
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• 제15권1호
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• pp.7-11
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• 2005

비자성 전이금속인 Rh 여러 층 사이에 자성 전이금속인 Ni 한층을 넣은 4Rh/Ni/4Rh(001) 계에서 Rh과 Ni의 자기 모멘트 진동현상을 FLAPW(full-potential linearized augmented plane wave) 방법을 이용하여 연구하였다. 가운데 층에 있는 Ni의 자기 모멘트를 계산한 결과는 0.34${\mu}_B$으로 덩치 Ni의 값보다 약 40% 감소한 값이다. Ni과의 강한 띠 혼성으로 Rh의 각 원자 층에 자기모멘트의 변화가 나타났는데 이 변화는 중심에서 표면으로 갈수록 작아지는 감쇠 진동을 하였다. Rh의 영향을 받아 가운데 Ni층의 폐르미 준위가 Ni의 에너지 띠 안쪽으로 이동하여 Ni의 전자수가 줄어들고 있음을 계산된 상태밀도 모양에서 알 수 있었다.

• 한국자기학회지
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• 제15권5호
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• pp.257-260
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• 2005

Zinc-blende 구조를 가진 CrS(001) 표면에서의 반쪽금속성과 자성을 제일원리 방법을 이용하여 연구하였다. 이를 위해 (001)면에서 서로 다른 두 개의 원자로 끝나는 면, 즉 Cr원자로 끝나는 (001) 표면(Cr-Term)과 S원자로 끝나는 (001) 표면(S-Term)계의 전자구조를 총 퍼텐셜 선형보강평면파동(FLAPW) 에너지띠 방법을 이용하여 계산하였다. 계산된 상태밀도로부터 Cr-Term과 S-Term계 모두 그 표면에서 반쪽금속성이 유지됨을 알았다 Cr-Term계의 표면 Cr원자의 자기모멘트는 덩치상태($3.61\;{\mu}_B$)에 비해 상당히 큰 $4.07\;{\mu}_B$이었으며 S-Term의 경우 표면 바로 밑층 Cr원자의 자기모멘트는 덩치상태에 비해 상당히 감소한 $3.15\;{\mu}_B$의 값을 가졌다.

• 센서학회지
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• 제32권6호
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• pp.455-461
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• 2023

We investigated the electrical characteristics of ZnO nanoparticles (NPs) with air exposure that is a widely used electron transport layer for quantum dot light-emitting diodes (QLEDs). Upon air exposure, we observed changes in the density of states (DOS) of the trap levels of ZnO NPs. In particular, with air exposure, the concentration of deep trap energy levels in ZnO NPs decreased and electron mobility significantly improved. Consequently, the air-exposed ZnO reduced leakage current by approximately one order of magnitude and enhanced the external quantum efficiency at the low driving voltage region of the QLED. In addition, based on the excellent conductivity properties, high-brightness QLEDs could be achieved.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.1208-1211
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• 2008

We study the amorphous In-Ga-Zn-O thin-film transistors (TFTs) properties under monochromatic illumination ($\lambda=420nm$) with different intensity. TFT off-state drain current ($I_{DS_off}$) was found to increase with the light intensity while field effect mobility ($\mu_{eff}$) is almost unchanged; only small change was observed for sub-threshold swing (S). Due to photo-generated charge trapping, a negative threshold voltage ($V_{th}$) shift is also observed. The photofield-effect analysis suggests a highly efficient UV photocurrent conversion in a-IGZO TFT. Finally, a-IGZO mid-gap density-of-states (DOS) was extracted and is more than an order lower than reported value for a-Si:H, which can explain a good switching properties of the a-IGZO TFTs.