• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.81-84
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• 2001

In recent years, the design of CMOS VCO at ever-higher frequencies has gained interest. This paper proposes an arithmetic functionality VCO circuit based on a differential ring oscillator for operating in high frequency. The proposed VCO architecture with half adder is able to produce two times higher frequency with my delay cell than conventional VCO produce double oscillation frequency and power dissipation is 14.59mW.

• 한국정보통신설비학회:학술대회논문집
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• 2006.08a
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• pp.179-182
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• 2006

This paper introduce a different-type voltage-controlled oscillator (VCO) for PLL frequency synthesizer, And also the architecture of a high speed low-power-consumption CMOS dual-modulus frequency divider is presented. It provides a new approach to high speed operation and low power consumption. The proposed circuits simulate in 0.35 um CMOS standard technology.

• Journal of Applied Biological Chemistry
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• v.43 no.4
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• pp.211-217
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• 2000

Oxidative stress is implicated in a number of diseases, in ageing of organisms, and in damage to plants that have been exposed to freezing and thawing or water stress. From the perspective of yeast as a model eukaryotic system, this article reviews the systems that are involved in the cellular responses to exposure to reactive oxygen species (ROS) generated during aerobic growth of the organism. The discussion includes the defense systems involved, the ability of cells to adapt to ROS treatment, cell-division cycle delay and the systems regulating gene expression that are activated by oxidative stress.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2001.10a
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• pp.541-544
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• 2001

The difference of transfer mode between TDMA and ATM causes cell delay variation(CDV) to be generated in the receiving station. I proposed a optimization method of timestamps for discrete-timestamps mechanism to compensate CDV and an application method in multiple timestamps mechanism.

• Proceedings of the KIPE Conference
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• 2013.07a
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• pp.532-533
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• 2013

본 논문에서는 다단 멀티레벨 컨버터(Cascaded Multilevel Converter) 방식으로 개발된 STATCOM에서 Phase-Shifted PWM 시 발생할 수 있는 개별 Cell 인버터의 출력 전압 위상 지연을 보상하여 시스템의 성능을 개선하였다.

• Journal of Preventive Medicine and Public Health
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• v.20 no.1 s.21
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• pp.1-9
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• 1987

Sister chromatid exchanges (SCEs) observed by means of bromodeoxyuridine substitution and fluorescence plus Giemsa (FPG) technique were proposed as a sensitive and quantitative assay for mutagenicity and cytotoxicity in short-term cultures of phytohaemagglutinin (PHA)-stimulated human lymphocytes. Therefore, this study was carried out to investigate the relation between anticancer agents and cytotoxic effects. Chromosomal analysis was performed on metaphase cells that had divided one, two, or three or more times after treatment for SCEs, mitotic indices (MI) and cell cycle kinetics by FPG technique. The results indicate that anticancer agents led to a dose dependent increase in SCE frequency except methotrexate. But, highly inhibited mitotic indices and delayed cell cycle kinetics were observed except for cyclophosphamide. The author suggest that the difference of SCE frequency is due to the differences in the cytotoxic action of anticancer agents, but although the induction of SCEs has a correlation with cell cycle delay, in some cases the induction of SCEs is not always related to cell cycle delay because of different cytotoxic action of anticancer agents.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.9
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• pp.1614-1618
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• 2007

We have demonstrated the experimental results to obtain the immunity of FN (Fowler Nordheim) stress for S-RCAT (Spherical-Recess Cell Array Transistor) which has been employed to meet the requirements of data retention time and propagation delay time for sub-100-nm mobile DRAM (Dynamic Random Access Memory). Despite of the same S-RCAT structure, the immunity of FN stress of S-RCAT depends on the process condition of gate oxidation. The S-RCAT using DPN (decoupled plasma nitridation) process showed the different degradation of device properties after FN stress. This paper gives the mechanism of FN-stress degradation of S-RCAT and introduces the improved process to suppress the FN-stress degradation of mobile DRAM.

• Journal of Korean Society of Industrial and Systems Engineering
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• v.19 no.40
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• pp.253-261
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• 1996

In optimizing the layout design of a multi-product assembly environment, tile analysis of the material flow is a vital ingredient. In flexible assembly systems, assembly time is usually very short thus the transfer time is relatively more important Therefore operations sequence must be so determined, that have no backtracking operations as possible as, It is important to form cells, so that they have no intercell movement in curring much processing delay, and to arrange machines as possible as densly. This study presents a independent cell formation method considering operation sequences and machine capacity in flexible assembly systems.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.4 no.2
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• pp.323-336
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• 2000

In order to achieve the deployment of B-ISDN services in a short time, B-ISDN is being combined with terrestrial ATM network and satellite network which covers a widespread service range. This paper analyzes and investigates several previously existent CDV compensation methods in order to compensate CDV arising from interfacing satellite TDMA and ATM. Specifically to supplement the problems of timestamp and cell number counting methods, new Partial Timestamp mechanism for CDV compensation is proposed. The CDV compensating efficiency of the proposed mechanism is analyzed and evaluated by simulations. It goes to show that Partial timestamps mechanism has many advantages in the aspect of the CDV compensation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.08a
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• pp.72-75
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• 2003

Effects of delay and panel temperature on the discharge time lag and the controllability of weak discharge mode were studied under single cell driving circumstances of ac PDP. It was found that sufficient number of priming particle is necessary for inducing weak discharge in ramp voltage driving. Discharge time lag was reduced dramatically under elevated panel temperature condition It is speculated that decrement of discharge time lag at the high temperature is related to the reduction of diffusion loss of charged particles during the after glow.