• 제목/요약/키워드: defects type

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Study point defect and growth for $CuInSe_2$ single crystal thin film by hot wall epitaxy (Hot Wall Epitaxy (HWE) 법에 의한 $CuInSe_2$ 단결정 박막 성장과 점결함 연구)

  • Yu, Sang-Ha;Hong, Gwang-Jun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.152-153
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    • 2007
  • $CuInSe_2$ single crystal thin film was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. After the as-grown $CuInSe_2$ single crystal thin films was annealed in Cu-, Se-, and In-atmospheres, the origin of point defects of $CuInSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{Cu}$, $V_{Se}$, $Cu_{lnt}$, and $Se_{lnt}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuInSe_2$ single crystal thin films to an optical n-type. Also, we confirmed that In in $CuInSe_2$/GaAs did not form the native defects because In in $CuInSe_2$ single crystal thin films existed in the form of stable bonds.

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Microstructural Analysis of Epitaxial Layer Defects in Si Wafer

  • Lim, Sung-Hwan
    • Korean Journal of Materials Research
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    • v.20 no.12
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    • pp.645-648
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    • 2010
  • The structure and morphology of epitaxial layer defects in epitaxial Si wafers produced by the Czochralski method were studied using focused ion beam (FIB) milling, scanning electron microscopy (SEM), and transmission electron microscopy (TEM). Epitaxial growth was carried out in a horizontal reactor at atmospheric pressure. The p-type Si wafers were loaded into the reactor at about $800^{\circ}C$ and heated to about $1150^{\circ}C$ in $H_2$. An epitaxial layer with a thickness of $4{\mu}m$ was grown at a temperature of 1080-$1100^{\circ}C$. Octahedral void defects, the inner walls of which were covered with a 2-4 nm-thick oxide, were surrounded mainly by $\{111\}$ planes. The formation of octahedral void defects was closely related to the agglomeration of vacancies during the growth process. Cross-sectional TEM observation suggests that the carbon impurities might possibly be related to the formation of oxide defects, considering that some kinds of carbon impurities remain on the Si surface during oxidation. In addition, carbon and oxygen impurities might play a crucial role in the formation of void defects during growth of the epitaxial layer.

Design of Welded Joints Using Stress Intensity Factors (응력확대계수를 이용한 용접이음부 설계 연구)

  • Park, Ji-Woo;Gu, Man-Hoi;Choi, Chang;Sung, Wan
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 1996.11a
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    • pp.1058-1062
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    • 1996
  • The assessments of weld defects by fracture mechanics are performed for design of welded Joints. In general, butt, T-type, and L-type welded joint are useful for welding structure. When linear weld defects are in welded joint, stress intensity factors for each joints are calculated by finite element method. Analysis results are shown for the fracture modes and characteristics of joint types. And they are founded for the weaken order of welded joints being T-type, butt, L-type.

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Characteristics of the influence of defect types and period of occurrence according to the type of tile work in an apartment house (공동주택 내 타일 공종에 따른 하자 유형과 발생기간의 영향 특성)

  • Pyeon, Su-Jeong;Kim, Gyu-Yong;Choi, Byung-Cheol;Kim, Moon-Gyu;Gill, Min-Woo;Nam, Jeong-Soo
    • Proceedings of the Korean Institute of Building Construction Conference
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    • 2022.11a
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    • pp.67-68
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    • 2022
  • The area inside the apartment building where tiles are installed is applied as a finishing material for walls and floors, including exterior walls, balconies, hallways, bathrooms, and kitchens. As it is constructed in various spaces, differences in the type and period of occurrence of tile defects may appear, which is caused by heterogeneous characteristics between materials and external causes. Therefore, in this study, two-way ANOVA was used to figure out the relationship between the defect occurrence type and the period depending on the type of tile construction in the apartment building.

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Distally based lateral supramalleolar flap: for reconstructing distal foot defects in India: a prospective cohort study

  • Raja Kiran Kumar Goud;Lakshmi Palukuri;Sanujit Pawde;Madhulika Dharmapuri;Swati Sankar;Sandeep Reddy Chintha
    • Journal of Trauma and Injury
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    • v.36 no.3
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    • pp.217-223
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    • 2023
  • Purpose: Defects involving the ankle and foot are often the result of road traffic accidents. Many such defects are composite and require a flap for coverage, which is a significant challenge for reconstructive surgeons. Various locoregional options, such as reverse sural artery, reverse peroneal artery, peroneus brevis muscle, perforator-based, and fasciocutaneous flaps, have been used, but each flap type has limitations. In this study, we used the distally based lateral supramalleolar flap to reconstruct distal dorsal defects of the foot. The aim of this study was to analyze the efficacy of the flap in reconstructing distal dorsal defects of the foot. The specific objectives were to study the adequacy, reach, and utility of the lateral supramalleolar flap for distal defects of the dorsum of the foot; to observe various complications encountered with the flap; and to study the functional outcomes of reconstruction. Methods: The distal dorsal foot defects of 10 patients were reconstructed with distal lateral supramalleolar flaps over a period of 6 months at a tertiary care center, and the results were analyzed. Results: We were able to effectively cover distal foot defects in all 10 cases. Flap congestion was observed in two cases, and minor graft loss was seen in two cases. Conclusions: The distally based lateral supramalleolar flap is a good pedicled locoregional flap for the coverage of distal dorsal foot and ankle defects of moderate size, with relatively few complications and little morbidity. It can be used as a lifeboat or even substitute for a free flap.

Effect of Zinc Vacancy on Carrier Concentrations of Nonstoichiometric ZnO

  • Kim, Eun-Dong;Bahng, Wook
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.05b
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    • pp.17-21
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    • 2001
  • We proposed that concentrations of cartier electron as well as ionized donor defects in nonstoichiometric ZnO are proportional to $P^{-1/2}_{O_2}$, whenever they ionizes singly or doubly, by employing the Fermi-Dirac (FD) statistics for ionization of the native thermal defects $Zn_i$ and $V_o$. The effect of acceptor defect, zinc vacancy $V_{Zn}$made by the Frenkel and Schottky disorder reactions, on carrier concentrations was discussed. By application of the FD statistics law to their ionization while the formation of defects is assumed governed by the mass-action law, the calculation results indicate; 1. ZnO shows n-type conductivity with $N_D>$N_A$ and majority concentration of $n{\propto}\;P^{-1/2}_{O_2}$ in a range of $P_{O_2}$, lower than a critical value. 2. As the concentration of acceptor $V_{Zn}$ increases proportional to $P^{1/2}_{O_{2}}$, ZnO made at extremely high $P_{O_{2}}$, can have p-type conductivity with majority concentration of p ${\propto}\;P^{-1/2}_{O_{2}}$. One may not, however, obtain p-type ZnO if the pressure for $N_{D}<$N_{A}$ is too high.

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Evaluation of freezing and thawing damage of concrete using a nonlinear ultrasonic method

  • Yim, Hong Jae;Park, Sun-Jong;Kim, Jae Hong;Kwak, Hyo-Gyong
    • Smart Structures and Systems
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    • v.17 no.1
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    • pp.45-58
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    • 2016
  • Freezing and thawing cycles induce deterioration and strength degradation of concrete structures. This study presumes that a large quantity of contact-type defects develop due to the freezing and thawing cycles of concrete and evaluates the degree of defects based on a nonlinearity parameter. The nonlinearity parameter was obtained by an impact-modulation technique, one of the nonlinear ultrasonic methods. It is then used as an indicator of the degree of contact-type defects. Five types of damaged samples were fabricated according to different freezing and thawing cycles, and the occurrence of opening or cracks on a micro-scale was visually verified via scanning electron microscopy. Dynamic modulus and wave velocity were also measured for a sensitivity comparison with the obtained nonlinearity parameter. The possibility of evaluating strength degradation was also investigated based on a simple correlation of the experimental results.

Detection of peri-implant bone defects using cone-beam computed tomography and digital periapical radiography with parallel and oblique projection

  • Saberi, Bardia Vadiati;Khosravifard, Negar;Ghandari, Farnaz;Hadinezhad, Arash
    • Imaging Science in Dentistry
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    • v.49 no.4
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    • pp.265-272
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    • 2019
  • Purpose: To compare the diagnostic accuracy of cone-beam computed tomography (CBCT) with that of parallel(PPA) and oblique projected periapical(OPA) radiography for the detection of different types of peri-implant bone defects. Materials and Methods: Forty implants inserted into bovine rib blocks were used. Thirty had standardized bone defects(10 each of angular, fenestration, and dehiscence defects), and 10 were defect-free controls. CBCT, PPA, and OPA images of the samples were acquired. The images were evaluated twice by each of 2 blinded observers regarding the presence or absence and the type of the defects. The area under the receiver operating characteristic curve (AUC), sensitivity, and specificity were determined for each radiographic technique. The 3 modalities were compared using the Fisher exact and chi-square tests, with P<0.05 considered as statistical significance. Results: High inter-examiner reliability was observed for the 3 techniques. Angular defects were detected with high sensitivity and specificity by all 3 modalities. CBCT and OPA showed similar AUC and sensitivity in the detection of fenestration defects. In the identification of dehiscence defects, CBCT showed the highest sensitivity, followed by OPA and PPA, respectively. CBCT and OPA had a significantly greater ability than PPA to detect fenestration and dehiscence defects(P<0.05). Conclusion: The application of OPA radiography in addition to routine PPA imaging as a radiographic follow-up method for dental implantation greatly enhances the visualization of fenestration and dehiscence defects. CBCT properly depicted all defect types studied, but it involves a relatively high dose of radiation and cost.

A Study on the Types and Causes of Defects in Apartment Housing Information and Communication Work (공동주택 정보통신공사 하자 유형 및 원인에 관한 연구)

  • Park, Hyun Jung;Jeong, U Jin;Park, Jae Woo;Kang, Sang Hun;Kim, Dae Young
    • Journal of the Korea Institute of Building Construction
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    • v.21 no.3
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    • pp.231-239
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    • 2021
  • Entering the era of the fourth industrial revolution, information and communication technologies such as CCTV, home network systems and equipment are being used in the construction industry. In particular, in order to increase the autonomy of information and communication technologies in apartments, the government has announced an administrative revision of information and communication-related laws, and companies are focusing on developing technologies such as smart home services. In addition, most domestic and foreign studies on the information and communication work were mainly conducted on technology and management. However there is a lack of research on physical defects affecting the quality of ICT. Therefore, this study collected the defect data registered in the project management system of three domestic construction companies and classified them according to the standards of the Enforcement Decree of the Apartment House Management Act. According to the analysis of the frequency of defects work type, 88.10% of defects occurred in home network equipment work. In addition, analysis of defects type in the four detailed works showed the highest number of operation error. The cause was analyzed and prevention measures and countermeasures were presented in parts of design, construction, and maintenance. The results of this study will improve the quality of apartment housing and be used as basic data for future research on practical defect minimization and prevention measures.

A Study on Recall Systems of Motor Vehicle by Statistical Analysis of Defects Investigation (자동차 제작결함조사 통계 분석을 통한 리콜제도 연구)

  • Song, Ji-hyun;Kwon, Hae-boung;Lee, Kwang-bum;Kim, Hee-june
    • Journal of Auto-vehicle Safety Association
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    • v.7 no.4
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    • pp.20-25
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    • 2015
  • The basic point of a vehicle recall is to remove vehicle defects as soon as possible and thus prevent possible road traffic accidents caused by the defects beforehand. Therefore, the core of vehicle recall under the self-certification system consists of a timely response and fast remedy of defects. The present study aimed to deduce a plan for improvement of the system necessary for the fast remedy of defects through a phased analysis of defect investigation procedure based on defect investigation statistical data. There will be a need to make the TSB(Technical Service Bulletin) or service campaign data submission of a manufacturer compulsory for the collection of broad defect information in the stage of information analysis and to impose a higher penalty when the manufacturer violates the data submission in the investigation stage. In addition, it is considered that an active service campaign should be induced and a punishment for late recall will be needed for consumer protection.